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I-4H-SiC iye yathengiswa njengesixhobo sezixhobo ze-semiconductor zamandla.Nangona kunjalo, ukuthembeka kwexesha elide lezixhobo ze-4H-SiC ngumqobo kwisicelo sabo esibanzi, kwaye eyona ngxaki ibaluleke kakhulu yokuthembeka kwezixhobo ze-4H-SiC kukuchithwa kwe-bipolar.Oku kuthotywa kubangelwa yimpazamo enye ye-Shockley stacking (1SSF) yokusasazwa kwe-basal plane dislocations in 4H-SiC crystals.Apha, sicebisa indlela yokucinezela ukwanda kwe-1SSF ngokufaka iiprotons kwi-4H-SiC epitaxial wafers.I-PiN diode eyenziwe kwii-wafers kunye nokufakelwa kweproton ibonise iimpawu ezifanayo zangoku ze-voltage njenge-diode ngaphandle kokufakelwa kweproton.Ngokwahlukileyo koko, ukwandiswa kwe-1SSF kucinezelwa ngokufanelekileyo kwi-proton-implanted PiN diode.Ke, ukufakelwa kweeprotons kwi-4H-SiC epitaxial wafers yindlela esebenzayo yokucinezela ukuthotywa kwe-bipolar ye-4H-SiC yezixhobo ze-semiconductor yamandla ngelixa ugcina ukusebenza kwesixhobo.Esi siphumo sinegalelo ekuphuhlisweni kwezixhobo ezithembekileyo ze-4H-SiC.
I-Silicon carbide (i-SiC) ibonwa ngokubanzi njengesixhobo se-semiconductor kumandla aphezulu, izixhobo ze-semiconductor eziphezulu ezinokusebenza kwiindawo ezinzima1.Kukho iipolytypes ezininzi ze-SiC, phakathi kwazo i-4H-SiC inezixhobo ezibalaseleyo ze-semiconductor yezixhobo zomzimba ezifana nokuhamba kwe-electron ephezulu kunye nokuphazamiseka okunamandla kwintsimi yombane2.Ii-wafers ze-4H-SiC ezinobubanzi obuyi-intshi ezi-6 zithengiswa ngoku kwaye zisetyenziselwa ukuveliswa kobuninzi bezixhobo ze-semiconductor zamandla3.Iinkqubo zokutsalwa kwezithuthi zombane kunye nezitimela zenziwe ngezixhobo ze-4H-SiC4.5 ze-semiconductor yamandla.Nangona kunjalo, izixhobo ze-4H-SiC zisabandezeleka kwimiba yokuthembeka kwexesha elide elifana nokuchithwa kwe-dielectric okanye ukuthembeka kwe-short-circuit, i-6,7 enye yezona zinto zibalulekileyo ezithembekileyo yi-bipolar degradation2,8,9,10,11.Oku kuthotywa kwe-bipolar kwafunyanwa kwiminyaka engama-20 eyadlulayo kwaye kudala kuyingxaki kukwenziwa kwesixhobo se-SiC.
Ukuchithwa kwe-bipolar kubangelwa yi-Shockley stack defect enye (1SSF) kwi-crystals ye-4H-SiC ene-basal plane dislocations (BPDs) esasaza ngokudibanisa i-dislocation glide ephuculweyo (REDG) 12,13,14,15,16,17,18,19.Ke ngoko, ukuba ukwandiswa kwe-BPD kucinezelwe kwi-1SSF, izixhobo zamandla ze-4H-SiC zinokwenziwa ngaphandle kokuthotywa kwe-bipolar.Iindlela ezininzi ziye zaxelwa ukucinezela ukusasazwa kwe-BPD, njenge-BPD kwi-Thread Edge Dislocation (TED) inguqu ye-20,21,22,23,24.Kwii-wafers ze-SiC ze-epitaxial zamva nje, i-BPD ifumaneka kakhulu kwi-substrate kwaye ingekho kwi-epitaxial layer ngenxa yokuguqulwa kwe-BPD kwi-TED ngexesha lokuqala lokukhula kwe-epitaxial.Ngoko ke, ingxaki eseleyo yokuchithwa kwe-bipolar kukusasazwa kwe-BPD kwi-substrate ye-25,26,27.Ukufakwa kwe "i-composite yokuqinisa umaleko" phakathi kwe-drift layer kunye ne-substrate iye yacetywa njengendlela esebenzayo yokucinezela ukwanda kwe-BPD kwi-substrate28, 29, 30, 31. i-epitaxial layer kunye ne-SiC substrate.Ukunciphisa inani lezibini ze-electron-hole kunciphisa amandla okuqhuba i-REDG ukuya kwi-BPD kwi-substrate, ngoko ke umaleko wokuqinisa odibeneyo unokucinezela ukuthotywa kwe-bipolar.Kufuneka kuqatshelwe ukuba ukufakela umaleko kubandakanya iindleko ezongezelelweyo ekuvelisweni kwee-wafers, kwaye ngaphandle kokufaka umaleko kunzima ukunciphisa inani le-electron-hole pairs ngokulawula kuphela ukulawulwa kwexesha lokuphila komthuthi.Ke ngoko, kusekho imfuneko eyomeleleyo yokuphuhlisa ezinye iindlela zokucinezela ukufikelela kwibhalansi engcono phakathi kweendleko zokwenziwa kwesixhobo kunye nesivuno.
Ngenxa yokuba ukwandiswa kwe-BPD kwi-1SSF kufuna ukunyakaza kwe-partial dislocations (PDs), ukukhonkxa i-PD yindlela ethembisayo yokuthintela ukuthotywa kwe-bipolar.Nangona i-PD i-pinning ngokungcola kwensimbi kuye kwabikwa, ii-FPD kwii-substrates ze-4H-SiC zifumaneka kumgama ongaphezu kwe-5 μm ukusuka kumphezulu we-epitaxial layer.Ukongeza, ekubeni i-coefficient yokusasazwa kwayo nayiphi na isinyithi kwi-SiC incinci kakhulu, kunzima ukuba ukungcola kwesinyithi kusasazeke kwi-substrate34.Ngenxa yobuninzi beathom yesinyithi, ukufakelwa kwe-ion yesinyithi nako kunzima.Ngokuchaseneyo, kwimeko ye-hydrogen, eyona nto ikhaphukhaphu, ii-ion (iiprotons) zinokumiliselwa kwi-4H-SiC ukuya kubunzulu obungaphezulu kwe-10 µm kusetyenziswa i-accelerator ye-MeV-class.Ke ngoko, ukuba ukufakwa kweproton kuchaphazela i-PD pinning, ke inokusetyenziselwa ukucinezela ukusasazwa kwe-BPD kwi-substrate.Nangona kunjalo, ukufakelwa kweproton kunokonakalisa i-4H-SiC kwaye kubangele ukusebenza kwesixhobo esincitshisiweyo37,38,39,40.
Ukoyisa ukuthotywa kwesixhobo ngenxa yokufakelwa kweproton, i-annealing yobushushu obuphezulu isetyenziselwa ukulungisa umonakalo, ngokufana nohlobo lwe-annealing olusetyenziswa ngokuqhelekileyo emva kokufakwa kwe-ion yokwamkela kwiprosesa yesixhobo1, 40, 41, 42. Nangona i-ion mass spectrometry (SIMS)43 inesibini. kuxelwe ukusasazwa kwe-hydrogen ngenxa yobushushu obuphezulu, kunokwenzeka ukuba kuphela ukuxinana kweeathom ze-hydrogen kufutshane ne-FD akwanelanga ukufumanisa i-pinning ye-PR usebenzisa i-SIMS.Ke ngoko, kolu phononongo, sifake iiprotons kwi-4H-SiC epitaxial wafers phambi kwenkqubo yokwenziwa kwesixhobo, kubandakanya ubushushu obuphezulu be-annealing.Sisebenzise ii-PiN diode njengezixhobo zovavanyo kwaye sazenza kwiiproton ezifakwe kwi-4H-SiC epitaxial wafers.Emva koko siye saqwalasela iimpawu ze-volt-ampere ukufunda ukuthotywa kokusebenza kwesixhobo ngenxa yokutofa kweproton.Emva koko, sabona ukwandiswa kwe-1SSF kwimifanekiso ye-electroluminescence (EL) emva kokufaka i-voltage yombane kwi-PiN diode.Ekugqibeleni, siye saqinisekisa umphumo wenaliti yeproton ekunyanzelweni kokwandiswa kwe-1SSF.
Kwikhiwane.Umzobo 1 ubonisa iimpawu ze-voltage zangoku (i-CVCs) ze-PiN diode kwindawo yobushushu begumbi kwimimandla kunye nangaphandle kokufakelwa kwe-proton ngaphambi kwe-pulsed yangoku.Iidiode zePiN ezinenaliti yeproton zibonisa iimpawu zokulungisa ezifana neediode ngaphandle kwesitofu seproton, nangona iimpawu ze-IV zabelwana ngazo phakathi kweediode.Ukubonisa umahluko phakathi kweemeko zokujova, siceba i-voltage frequency kwi-concentration yangoku ye-2.5 A / cm2 (ehambelana ne-100 mA) njengeplani yezibalo njengoko kubonisiwe kuMfanekiso 2. Ijika eliqikelelwa ngokusasazwa okuqhelekileyo nalo limelelwe. ngomgca onamachaphaza.umgca.Njengoko kunokubonwa kwiincopho zeegophe, ukuxhathisa kunyuka kancinci kwidosi yeproton ye-1014 kunye ne-1016 cm-2, ngelixa i-PiN diode enedosi yeproton ye-1012 cm-2 ibonisa phantse iimpawu ezifanayo ngaphandle kokufakelwa kweproton. .Senze kwakhona ukufakelwa kweproton emva kokwenziwa kwePiN diode engazange ibonise i-electroluminescence efanayo ngenxa yomonakalo owenziwe kukufakelwa kweproton njengoko kubonisiwe kuMfanekiso S1 njengoko kuchaziwe kwizifundo zangaphambili37,38,39.Ngoko ke, ukuhlanjululwa kwi-1600 ° C emva kokufakelwa kwe-Al ion yinkqubo efunekayo yokwenza izixhobo ukuze kusebenze i-Al acceptor, enokuthi ilungise umonakalo obangelwa kukufakelwa kweproton, eyenza i-CVCs ifane phakathi kwe-proton PiN diodes efakwe kunye ne-non-implantation. .I-reverse yangoku i-frequency kwi -5 V nayo ibonakaliswe kuMfanekiso we-S2, akukho mahluko ubalulekileyo phakathi kwe-diode kunye nangaphandle kwe-injection yeproton.
Iimpawu zeVolt-ampere zePiN diode kunye nangaphandle kweeprotons ezitofelweyo kwiqondo lokushisa.Ibali libonisa umthamo weeprotons.
I-voltage frequency kwi-2.5 A / cm2 yangoku ngokuthe ngqo kwi-PiN diode kunye neeproton ezitofwayo kunye nezingafakwanga.Umgca wamachaphaza uhambelana nonikezelo oluqhelekileyo.
Kwikhiwane.I-3 ibonisa umfanekiso we-EL we-PiN diode kunye noxinano lwangoku lwe-25 A / cm2 emva kombane.Ngaphambi kokusebenzisa umthwalo wangoku we-pulsed, imimandla emnyama ye-diode ayizange ibonwe, njengoko kuboniswe kuMfanekiso 3. C2.Nangona kunjalo, njengoko kubonisiwe kwifig.I-3a, kwi-PiN diode ngaphandle kokufakelwa kweproton, imimandla emininzi enemigca emnyama enemiphetho yokukhanya yabonwa emva kokufaka i-voltage yombane.Imimandla emnyama efana nentonga ibonwa kwimifanekiso ye-EL ye-1SSF isuka kwi-BPD kwi-substrate28,29.Endaweni yoko, ezinye iimpazamo ezandisiweyo zokupakisha zabonwa kwii-PiN diode ezineproton ezifakelwe, njengoko kubonisiwe kumfanekiso 3b-d.Ukusebenzisa i-X-ray topography, siqinisekisile ubukho be-PRs ezinokusuka kwi-BPD ukuya kwi-substrate kwi-periphery yabafowunelwa kwi-PiN diode ngaphandle kwe-proton injection (umzobo 4: lo mfanekiso ngaphandle kokususa i-electrode ephezulu (ifoto, i-PR phantsi kwe-electrode ayibonakali) Ngoko ke, indawo emnyama kumfanekiso we-EL ihambelana ne-1SSF BPD eyandisiweyo kwi-substrate. Imifanekiso ye-EL yezinye ii-PiN diode ezilayishiwe ziboniswa kwiMifanekiso 1 kunye ne-2. Iividiyo ze-S3-S6 kunye nangaphandle kwandisiwe iindawo ezimnyama (ixesha elitshintshayo imifanekiso ye-EL ye-PiN diode ngaphandle kwe-injection yeproton kwaye ifakwe kwi-1014 cm-2) nayo iboniswe kwiiNkcukacha ezongezelelweyo.
Imifanekiso ye-EL ye-PiN diodes kwi-25 A / cm2 emva kweeyure ze-2 zoxinzelelo lombane (a) ngaphandle kokufakelwa kweproton kunye needosi ezifakelwe (b) 1012 cm-2, (c) 1014 cm-2 kunye (d) 1016 cm-2 iiprotoni .
Sibale ubuninzi be-1SSF eyandisiweyo ngokubala iindawo ezimnyama ezinemiphetho ekhanyayo kwii-PiN diode ezintathu kwimeko nganye, njengoko kuboniswe kuMzobo 5. Ubuninzi be-1SSF eyandisiweyo buyancipha ngokunyuka kwe-proton dose, kwaye nakwi-dose ye-1012 cm-2, Uxinaniso lwe-1SSF eyandisiweyo lusezantsi kakhulu kune-PiN diode engamiliselwanga.
Ukuxinana okunyukileyo kwe-SF PiN diode kunye nangaphandle kokufakelwa kweproton emva kokulayishwa nge-pulsed current (ilizwe ngalinye libandakanya iidiode ezintathu ezilayishiwe).
Ukunciphisa ubomi bomthwali nako kuchaphazela ukunyanzeliswa kokwandiswa, kunye nenaliti yeproton inciphisa ubomi bomntu ophethe32,36.Siye saqwalasela ubomi bomntu ophetheyo kumaleko we-epitaxial angama-60 µm ubukhulu kunye neeprotoni ezitofwayo ze-1014 cm-2.Ukususela kubomi bokuqala bokuthwala, nangona ukufakelwa kunciphisa ixabiso kwi- ~ 10%, i-annealing elandelayo ibuyisela kwi ~ 50%, njengoko kuboniswe kwi-Fig.Ke ngoko, ubomi bomthwali, buncitshiswe ngenxa yokufakelwa kweproton, bubuyiselwa ngokufakwa kobushushu obuphezulu.Nangona ukuncipha kwe-50% kubomi bomthwali nako kucinezela ukusasazwa kweempazamo zokupakisha, iimpawu ze-I-V, ezixhomekeke ngokuqhelekileyo kubomi bomthwali, zibonisa kuphela umahluko omncinci phakathi kwe-diodes etofwayo kunye ne-non-implanted.Ke ngoko, sikholelwa ukuba i-PD anchoring idlala indima ekunqandeni ukwandiswa kwe-1SSF.
Nangona i-SIMS ayizange ibone i-hydrogen emva kwe-annealing kwi-1600 ° C, njengoko kuchazwe kwizifundo zangaphambili, siye sabona umphumo wokufakelwa kweproton ekunyanzelweni kwe-1SSF yokwandiswa, njengoko kuboniswe kwiMifanekiso 1 kunye ne-4. 3, 4. Ngoko ke, sikholelwa ukuba I-PD igxininiswe ngama-athomu e-hydrogen ngoxinaniso olungaphantsi komda wokufumanisa we-SIMS (2 × 1016 cm-3) okanye iziphene ezibangelwa kukufakelwa.Kufuneka kuqatshelwe ukuba asizange siqinisekise ukwanda kokuchasana kwe-state ngenxa yokwandiswa kwe-1SSF emva komthwalo okhoyo ngoku.Oku kunokuba ngenxa yoqhagamshelwano olungafezekanga lwe-ohmic olwenziwe kusetyenziswa inkqubo yethu, eya kupheliswa kungekudala.
Ukuqukumbela, siphuhlise indlela yokucima yokwandisa i-BPD kwi-1SSF kwi-4H-SiC PiN diode usebenzisa i-proton implantation ngaphambi kokwenziwa kwesixhobo.Ukuwohloka kweempawu ze-I–V ngexesha lofakelo lweproton ayibalulekanga, ngakumbi kwidosi yeproton ye-1012 cm–2, kodwa umphumo wokucinezela ukwandiswa kwe-1SSF ubalulekile.Nangona kolu phononongo senze i-10 µm engqindilili yePiN diode ngofakelo lweproton kubunzulu be-10 µm, kusenokwenzeka ukunyusa ngakumbi iimeko zofakelo kwaye sizisebenzise ukwenza ezinye iindidi zezixhobo ze-4H-SiC.Iindleko ezongezelelweyo zokwenziwa kwesixhobo ngexesha lokufakelwa kweproton kufuneka ziqwalaselwe, kodwa ziya kufana nezo ze-aluminium ion implantation, eyona nkqubo yokwenziwa kwezixhobo zombane ze-4H-SiC.Ke, ukufakelwa kweproton phambi kokusetyenzwa kwesixhobo yindlela enokwenzeka yokwenza izixhobo zamandla e-bipolar ze-4H-SiC ngaphandle kokonakala.
I-4-intshi ye-n-uhlobo lwe-4H-SiC wafer enobunzima be-epitaxial layer ye-10 µm kunye ne-doping concentration ye-1 × 1016 cm–3 isetyenziswe njengesampulu.Ngaphambi kokucubungula isixhobo, ii-ion ze-H + zafakwa kwipleyiti ngamandla okukhawuleza we-0.95 MeV kwiqondo lobushushu begumbi ukuya kubunzulu obumalunga ne-10 μm kwi-engile eqhelekileyo kumphezulu weplate.Ngexesha lokufakelwa kweproton, imaski kwipleyiti yayisetyenzisiwe, kwaye ipleyiti yayinamacandelo angenayo kunye ne-proton dose ye-1012, 1014, okanye i-1016 cm-2.Emva koko, ii-Al ion ezineedosi zeproton ze-1020 kunye ne-1017 cm-3 zahlohlwa phezu kwe-wafer yonke ukuya kubunzulu obuyi-0-0.2 µm kunye ne-0.2-0.5 µm ukusuka phezulu, ilandelwa yi-annealing kwi-1600 ° C ukwenza i-carbon cap ukuze yenza umaleko we-ap.-uhlobo.Emva koko, i-back side ye-Ni contact yafakwa kwicala le-substrate, ngelixa i-2.0 mm × 2.0 mm i-comb-shaped Ti / Al front side contact eyenziwa yi-photolithography kunye nenkqubo ye-peel yafakwa kwicala le-epitaxial layer.Ekugqibeleni, i-annealing yoqhagamshelwano yenziwa kwiqondo lobushushu le-700 °C.Emva kokusika i-wafer kwiichips, senze uphawu loxinzelelo kunye nesicelo.
Iimpawu ze-I-V ze-PiN diode ezenziweyo zabonwa kusetyenziswa i-HP4155B semiconductor parameter analyzer.Njengoxinzelelo lombane, i-10-millisecond pulsed current ye-212.5 A / cm2 yaziswa ngeeyure ze-2 kwi-frequency ye-10 pulses / sec.Xa sikhetha ubuninzi obuphantsi bangoku okanye ukuphindaphinda, asizange siqaphele ukwanda kwe-1SSF nakwi-PiN diode ngaphandle kwesitofu seproton.Ngexesha lombane wombane osetyenzisiweyo, ubushushu bePiN diode bujikeleze i-70 ° C ngaphandle kokufudumeza ngamabomu, njengoko kuboniswe kuMfanekiso S8.Imifanekiso ye-Electroluminescent ifunyenwe ngaphambi nangemva koxinzelelo lombane kwi-25 A / cm2 yangoku.I-synchrotron ebonakalisa izehlo zedlelo ze-X-reyi kusetyenziswa umqadi we-X-reyi we-monochromatic (λ = 0.15 nm) kwi-Aichi Synchrotron Radiation Centre, i-ag vector kwi-BL8S2 yi- -1-128 okanye 11-28 (jonga i-ref. 44 ngeenkcukacha) .).
I-voltage frequency kwi-front current density ye-2.5 A / cm2 ikhutshwe kunye nekhefu le-0.5 V kwifig.2 ngokweCVC yelizwe ngalinye lePiN diode.Ukususela kwixabiso eliqhelekileyo loxinzelelo lwe-Vave kunye nokuphambuka okusemgangathweni σ woxinzelelo, sicwangcisa ijika eliqhelekileyo lokusabalalisa ngendlela yomgca onamachaphaza kuMfanekiso 2 usebenzisa le equation ilandelayo:
Werner, MR & Fahrner, WR Review on materials, microsensors, systems and devices for high-temperature and hard-environment applications. Werner, MR & Fahrner, WR Review on materials, microsensors, systems and devices for high-temperature and hard-environment applications.Werner, MR kunye noFarner, WR Isishwankathelo sezinto eziphathekayo, i-microsensors, iinkqubo kunye nezixhobo zokusetyenziswa kwiqondo lokushisa eliphezulu kunye neendawo ezinzima. Werner, MR & Fahrner, WR 对用于高温和恶劣环境应用的材料、微传感器、系统和设备的评论。 Werner, MR & Fahrner, WR Uphononongo lwezixhobo, ii-microsensors, iinkqubo kunye nezixhobo zobushushu obuphezulu kunye nezicelo ezimbi zokusingqongileyo.I-Werner, uMR kunye noFarner, i-WR Isishwankathelo sezinto eziphathekayo, i-microsensors, iinkqubo kunye nezixhobo zezicelo kwiqondo lokushisa eliphezulu kunye neemeko ezinzima.IEEE Trans.Ii-elektroniki zemizi-mveliso.48, 249-257 (2001).
I-Kimoto, i-T. & Cooper, i-JA Iziseko ze-Silicon Carbide Technology ezisisiseko ze-Silicon Carbide Technology: Ukukhula, ukuPhathwa, izixhobo kunye nezicelo Vol. I-Kimoto, i-T. & Cooper, i-JA Iziseko ze-Silicon Carbide Technology ezisisiseko ze-Silicon Carbide Technology: Ukukhula, ukuPhathwa, izixhobo kunye nezicelo Vol.I-Kimoto, T. kunye ne-Cooper, i-JA Basics ye-Silicon Carbide Technology Basics ye-Silicon Carbide Technology: Ukukhula, iimpawu, izixhobo kunye nezicelo zeVol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 Kimoto, T. & Cooper, JA Carbon化silicon isiseko sobuchwephesha beCarbon化silicon isiseko sobuchwephesha: ukukhula, inkcazo, izixhobo kunye nomthamo wesicelo.I-Kimoto, T. kunye ne-Cooper, i-J. Iziseko ze-Silicon Carbide Technology Basics ze-Silicon Carbide Technology: Ukukhula, Iimpawu, Izixhobo kunye nezicelo zeVol.252 (Wiley Singapore Pte Ltd, 2014).
I-Veliadis, V. URhwebo olukhulu lwe-SiC: Isimo se-Quo kunye neMiqobo ekufuneka Yoyisiwe.i-alma mater.inzululwazi.Iforamu 1062, 125-130 (2022).
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Ixesha lokuposa: Nov-06-2022