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I-4H-SiC idayiswe njengempahla yamadivayisi we-semiconductor yamandla.Kodwa-ke, ukwethembeka kwesikhathi eside kwamadivayisi we-4H-SiC kuyisithiyo ekusebenzeni kwawo okubanzi, futhi inkinga ebaluleke kakhulu yokuthembeka yamadivayisi we-4H-SiC ukuwohloka kwe-bipolar.Lokhu konakala kubangelwa iphutha elilodwa le-Shockley stacking (1SSF) lokuhlukaniswa kwendiza ye-basal kumakristalu e-4H-SiC.Lapha, siphakamisa indlela yokucindezela ukunwetshwa kwe-1SSF ngokufaka ama-proton kuma-4H-SiC epitaxial wafers.Ama-PiN diode akhiwe kuma-wafer afakwe i-proton abonise izici ezifanayo zamanje ze-voltage njengama-diode ngaphandle kokufakwa kwe-proton.Ngokuphambene, ukunwetshwa kwe-1SSF kucindezelwa ngempumelelo ku-PiN diode efakwe i-proton.Ngakho-ke, ukufakwa kwama-protons kuma-4H-SiC epitaxial wafers kuyindlela ephumelelayo yokucindezela ukuwohloka kwe-bipolar yamadivayisi we-4H-SiC we-semiconductor yamandla ngenkathi kugcinwa ukusebenza kwedivayisi.Lo mphumela unomthelela ekwakhiweni kwamadivayisi athembeke kakhulu e-4H-SiC.
I-Silicon carbide (i-SiC) yaziwa kabanzi njengempahla ye-semiconductor yamadivayisi anamandla amakhulu, ama-high-frequency semiconductor angasebenza ezindaweni ezinokhahlo1.Kunama-polytypes amaningi e-SiC, phakathi kwawo i-4H-SiC enezakhiwo ezibonakalayo zedivayisi ye-semiconductor efana nokuhamba kwe-electron ephezulu kanye nensimu kagesi ephukile eqinile2.Amawafa e-4H-SiC anobubanzi obungama-intshi angu-6 okwamanje ayathengiswa futhi asetshenziselwa ukukhiqizwa ngobuningi bamadivayisi e-semiconductor yamandla3.Amasistimu okudonsa izimoto zikagesi nezitimela zenziwa kusetshenziswa amadivaysi e-semiconductor yamandla e-4H-SiC4.5.Kodwa-ke, amadivaysi e-4H-SiC asalokhu ehlushwa izinkinga zokwethenjelwa zesikhathi eside njengokuwohloka kwe-dielectric noma ukuthembeka kwesifunda esifushane, i-6,7 enye yezinkinga ezibaluleke kakhulu zokuthembeka i-bipolar degradation2,8,9,10,11.Lokhu kucekelwa phansi kwe-bipolar kwatholakala eminyakeni engu-20 edlule futhi sekuyisikhathi eside kuyinkinga ekwenziweni kwedivayisi ye-SiC.
Ukuwohloka kwe-bipolar kubangelwa isici esisodwa se-Shockley stack (1SSF) kumakristalu e-4H-SiC ane-basal plane dislocations (BPDs) esakazeka ngokuhlanganisa kabusha okuthuthukisiwe kwe-dislocation glide (REDG)12,13,14,15,16,17,18,19.Ngakho-ke, uma ukunwetshwa kwe-BPD kucindezelwa ku-1SSF, amadivayisi kagesi we-4H-SiC angenziwa ngaphandle kokuwohloka kwe-bipolar.Kubikwe izindlela ezimbalwa zokucindezela ukusakazeka kwe-BPD, njenge-BPD kuya ku-Thread Edge Dislocation (TED) ukuguqulwa okungu-20,21,22,23,24.Kuma-wafers we-SiC epitaxial wakamuva, i-BPD itholakala ngokuyinhloko ku-substrate hhayi kungqimba lwe-epitaxial ngenxa yokuguqulwa kwe-BPD ku-TED ngesikhathi sokuqala sokukhula kwe-epitaxial.Ngakho-ke, inkinga esele yokuwohloka kwe-bipolar ukusatshalaliswa kwe-BPD ku-substrate engu-25,26,27.Ukufakwa "kwesendlalelo esiqinisayo esiyinhlanganisela" phakathi kwesendlalelo sokukhukhuleka kanye ne-substrate kuhlongoziwe njengendlela esebenzayo yokucindezela ukunwetshwa kwe-BPD ku-substrate28, 29, 30, 31. Lesi sendlalelo sandisa amathuba okuphinda kuhlanganiswe ipheya ye-electron-hole i-epitaxial layer kanye ne-SiC substrate.Ukunciphisa inani lamapheya e-electron-hole kunciphisa amandla okushayela e-REDG kuya ku-BPD ku-substrate, ngakho ungqimba oluyinhlanganisela lokuqinisa lungacindezela ukuwohloka kwe-bipolar.Kumele kuqashelwe ukuthi ukufakwa kwesendlalelo kuhlanganisa izindleko ezengeziwe ekukhiqizeni ama-wafers, futhi ngaphandle kokufaka ungqimba kunzima ukunciphisa inani lamapheya e-electron-hole ngokulawula kuphela ukulawulwa kwesikhathi sokuphila komthwali.Ngakho-ke, kusenesidingo esinamandla sokuthuthukisa ezinye izindlela zokucindezela ukuze kuzuzwe ibhalansi engcono phakathi kwezindleko zokukhiqiza idivayisi kanye nesivuno.
Ngenxa yokuthi ukunwetshwa kwe-BPD kuya ku-1SSF kudinga ukunyakaza kokususwa kwengxenye (PDs), ukuphina i-PD kuyindlela ethembisayo yokuvimbela ukuwohloka kwe-bipolar.Nakuba ukuphinwa kwe-PD ngokungcola kwensimbi kuye kwabikwa, ama-FPD kuma-substrates angu-4H-SiC atholakala ebangeni elingaphezu kuka-5 μm ukusuka ebusweni bengqimba ye-epitaxial.Ngaphezu kwalokho, njengoba i-coefficient yokusabalalisa yanoma iyiphi insimbi ku-SiC incane kakhulu, kunzima ukuthi ukungcola kwensimbi kusakazeke ku-substrate34.Ngenxa yobuningi be-athomu yensimbi, ukufakwa kwe-ion yezinsimbi nakho kunzima.Ngokuphambene, esimweni se-hydrogen, i-elementi elula kakhulu, ama-ion (ama-proton) angafakwa ku-4H-SiC ekujuleni okungaphezu kuka-10 µm kusetshenziswa i-accelerator ye-MeV-class.Ngakho-ke, uma ukufakwa kwe-proton kuthinta ukuphina kwe-PD, khona-ke kungasetshenziswa ukucindezela ukusakazeka kwe-BPD ku-substrate.Nokho, ukufakwa kwe-proton kungalimaza i-4H-SiC futhi kuphumele ekunciphiseni ukusebenza kwedivayisi37,38,39,40.
Ukuze unqobe ukonakala kwedivayisi ngenxa yokufakelwa kwe-proton, ukufakwa kwezinga lokushisa okuphezulu kusetshenziselwa ukulungisa umonakalo, okufana nendlela yokudonsa evame ukusetshenziswa ngemva kokufakwa kwe-ion yokwamukela ekucutshungulweni kwedivayisi1, 40, 41, 42. Nakuba i-ion mass spectrometry (SIMS)43 kubika ukusabalalisa kwe-hydrogen ngenxa yokushisa okuphezulu, kungenzeka ukuthi ukuminyana kuphela kwama-athomu e-hydrogen eduze ne-FD akwanele ukuthola ukuphinwa kwe-PR kusetshenziswa i-SIMS.Ngakho-ke, kulolu cwaningo, sifake ama-protons kuma-4H-SiC epitaxial wafers ngaphambi kwenqubo yokwenziwa kwedivayisi, okuhlanganisa ukushisa okuphezulu kwe-annealing.Sisebenzise ama-PiN diode njengezakhiwo zedivayisi yokuhlola futhi sawenza kumawafa e-epitaxial e-proton afakwe yi-4H-SiC.Sibe sesibheka izici ze-volt-ampere ukuze sifunde ukonakala kokusebenza kwedivayisi ngenxa yomjovo we-proton.Ngokulandelayo, siye sabona ukunwetshwa kwe-1SSF ezithombeni ze-electroluminescence (EL) ngemva kokufaka i-voltage kagesi ku-PiN diode.Ekugcineni, siqinisekise umphumela womjovo we-proton ekucindezelweni kokunwetshwa kwe-1SSF.
Emkhiwaneni.Umfanekiso 1 ubonisa izici zamanje ze-voltage (CVCs) zama-PiN diode ezingeni lokushisa legumbi ezifundeni ezinokufakelwa kwe-proton nangaphandle kwayo ngaphambi kwe-pulsed current.Ama-PiN diode anomjovo we-proton abonisa izici zokulungisa ezifana nama-diode ngaphandle komjovo we-proton, nakuba izici ze-IV zabiwa phakathi kwama-diode.Ukukhombisa umehluko phakathi kwezimo zomjovo, sihlele imvamisa ye-voltage ekugqileni kwamanje okuya phambili okungu-2.5 A/cm2 (okuhambisana no-100 mA) njengesakhiwo sezibalo njengoba kuboniswe kuMfanekiso 2. Ijika elilinganiselwe ukusatshalaliswa okuvamile nalo limelelwe. ngomugqa onachashazi.umugqa.Njengoba kungabonwa eziqongweni zamajika, ukumelana nokumelana kukhuphuka kancane kumithamo ye-proton engu-1014 no-1016 cm-2, kuyilapho i-PiN diode enomthamo we-proton engu-1012 cm-2 ibonisa cishe izici ezifanayo njengalapho ngaphandle kokufakelwa kwe-proton. .Senze futhi ukufakwa kwe-proton ngemva kokwenziwa kwama-PiN diode angazange abonise i-electroluminescence efanayo ngenxa yomonakalo odalwe ukufakwa kwe-proton njengoba kuboniswe kuMfanekiso S1 njengoba kuchazwe ezifundweni ezedlule37,38,39.Ngakho-ke, ukudonsa ku-1600 °C ngemva kokufakwa kwe-Al ion kuyinqubo edingekayo ukuze kwenziwe amadivaysi ukuze kusebenze i-Al acceptor, engalungisa umonakalo odalwe ukufakwa kwe-proton, okwenza ama-CVC afane phakathi kwama-proton PiN diode afakwe kanye nalawo angafakwanga. .Imvamisa yamanje ehlehlayo ku -5 V nayo yethulwa kuMfanekiso S2, awukho umehluko obalulekile phakathi kwama-diode anomjovo weproton nangaphandle kwawo.
Izici ze-Volt-ampere zama-PiN diode anama-proton ajovwe nangenayo ekamelweni lokushisa.Inganekwane ibonisa umthamo wama-proton.
Imvamisa yamandla kagesi ku-2.5 A/cm2 yamanje yama-PiN diode anamaphrothoni ajovwe nangenawo.Ulayini onamachashazi uhambisana nokusabalalisa okuvamile.
Emkhiwaneni.I-3 ibonisa isithombe se-EL se-PiN diode esinokuminyana kwamanje okungu-25 A/cm2 ngemva kwe-voltage.Ngaphambi kokusebenzisa umthwalo wamanje we-pulsed, izifunda ezimnyama ze-diode azizange zibonwe, njengoba kuboniswe kuMfanekiso 3. C2.Nokho, njengoba kuboniswe fig.3a, ku-PiN diode ngaphandle kokufakwa kwe-proton, izifunda ezimbalwa ezinemigqa emnyama ezinemiphetho yokukhanya zabonwa ngemva kokufaka i-voltage kagesi.Izifunda ezinjalo ezimnyama ezimise okwenduku zibonwa ezithombeni ze-EL ze-1SSF ezisuka ku-BPD ku-substrate28,29.Esikhundleni salokho, amanye amaphutha e-stacking anwetshiwe abonwa kuma-PiN diode anama-proton afakiwe, njengoba kuboniswe ku-Fig. 3b-d.Sisebenzisa i-X-ray topography, siqinisekise ukuba khona kwama-PRs angasuka ku-BPD aye endaweni engaphansi endaweni ezungezile yabathintana nabo ku-PiN diode ngaphandle komjovo we-proton (Fig. 4: lesi sithombe ngaphandle kokukhipha i-electrode ephezulu (isithombe, i-PR ngaphansi kwama-electrode akubonakali). Ngakho-ke, indawo emnyama esithombeni se-EL ihambisana ne-1SSF BPD enwetshiwe ku-substrate. Izithombe ze-EL zamanye ama-PiN diode alayishiwe aboniswa kuFigure 1 no-2. Amavidiyo S3-S6 anwetshiwe nangaphandle izindawo ezimnyama (izithombe ze-EL ezishintsha isikhathi zama-PiN diode ngaphandle komjovo we-proton futhi zifakwe ku-1014 cm-2) nazo ziboniswa Ulwazi Olwengeziwe .
Izithombe ze-EL zama-PiN diode ku-25 A/cm2 ngemva kwamahora angu-2 engcindezi kagesi (a) ngaphandle kokufakwa kwe-proton kanye nemithamo efakiwe engu-(b) 1012 cm-2, (c) 1014 cm-2 kanye (d) 1016 cm-2 ama-proton.
Sibale ukuminyana kwe-1SSF enwetshiwe ngokubala izindawo ezimnyama ezinemiphetho ekhanyayo kuma-PiN diode amathathu esimweni ngasinye, njengoba kuboniswe kumfanekiso 5. Ukuminyana kwe-1SSF enwetshiwe kuncipha ngomthamo we-proton okhulayo, futhi ngisho nangomthamo ongu-1012 cm-2, ukuminyana kwe-1SSF enwetshiwe kuphansi kakhulu kune-PiN diode engafakwanga.
Ukuminyana okunyukile kwama-SF PiN diode afakwe nangaphandle kwe-proton ngemva kokulayisha nge-pulsed current (isifunda ngasinye sasihlanganisa ama-diode amathathu alayishiwe).
Ukunciphisa impilo yenkampani yenethiwekhi nakho kuthinta ukucindezelwa kokunwetshwa, futhi umjovo we-proton unciphisa impilo yenkampani yenethiwekhi32,36.Sibone ukuphila kwenkampani yenethiwekhi kusendlalelo se-epitaxial engu-60 µm obukhulu obunamaphrothoni ajovwe angu-1014 cm-2.Kusukela esikhathini sokuqala sempilo yenkampani yenethiwekhi, nakuba ukufakelwa kwehlisa inani libe ngu-~10%, ukudonsa okulandelayo kubuyisela ku-~50%, njengoba kuboniswe ku-Fig. S7.Ngakho-ke, impilo yenkampani yenethiwekhi, encishisiwe ngenxa yokufakelwa kwe-proton, ibuyiselwa ngokufakwa kwezinga lokushisa eliphezulu.Nakuba ukwehla ngo-50% kwempilo yenkampani yenethiwekhi kucindezela futhi ukusakazeka kwamaphutha ekustaki, izici ze-I–V, ngokuvamile ezincike empilweni yenkampani yenethiwekhi, zibonisa umehluko omncane kuphela phakathi kwama-diode ajovwe nangafakwanga.Ngakho-ke, sikholwa ukuthi i-PD anchoring idlala indima ekuvimbeleni ukunwetshwa kwe-1SSF.
Nakuba i-SIMS ingazange ibone i-hydrogen ngemva kokukhishwa kwe-anneal ku-1600 ° C, njengoba kubikiwe ezifundweni zangaphambilini, sabona umphumela wokufakelwa kwe-proton ekucindezelweni kokunwetshwa kwe-1SSF, njengoba kuboniswe kuMfanekiso 1 no-4. 3, 4. Ngakho-ke, sikholelwa ukuthi i-PD iqiniswe ama-athomu e-hydrogen anobuningi obungaphansi komkhawulo wokutholwa we-SIMS (2 × 1016 cm-3) noma amaphoyinti amaphutha adangwe ukufakwa.Kufanele kuqashelwe ukuthi asizange sikuqinisekise ukwenyuka kokumelana nombuso ngenxa yokwelulwa kwe-1SSF ngemuva komthwalo wamanje wokuhlinzwa.Lokhu kungase kube ngenxa yokuxhumana okungaphelele kwe-ohmic okwenziwe kusetshenziswa inqubo yethu, ezoqedwa maduze nje.
Sengiphetha, sithuthukise indlela yokucisha yokwelula i-BPD iye ku-1SSF kuma-diode angu-4H-SiC PiN sisebenzisa ukufakwa kwe-proton ngaphambi kokwenziwa kwedivayisi.Ukuwohloka kwesici se-I–V ngesikhathi sokufakwa kwe-proton akubalulekile, ikakhulukazi kumthamo we-proton ongu-1012 cm–2, kodwa umphumela wokucindezela ukunwetshwa kwe-1SSF ubalulekile.Nakuba kulolu cwaningo senze ama-PiN diode angu-10 µm awugqinsi ngokufakelwa kwe-proton ekujuleni okungu-10 µm, kusengenzeka ukuthi sithuthukise izimo zokufakelwa futhi sizisebenzise ukuze kwenziwe ezinye izinhlobo zamadivayisi e-4H-SiC.Izindleko ezengeziwe zokwenziwa kwedivayisi ngesikhathi sokufakwa kwe-proton kufanele zicatshangelwe, kodwa zizofana nalezo zokufakelwa kwe-aluminium ion, okuyinqubo eyinhloko yokwenziwa kwamadivayisi kagesi we-4H-SiC.Ngakho-ke, ukufakwa kwe-proton ngaphambi kokucutshungulwa kwedivayisi kuyindlela engaba khona yokwenza amadivayisi kagesi we-bipolar we-4H-SiC ngaphandle kokuwohloka.
I-wafer engu-4-inch n-type 4H-SiC enogqinsi lwe-epitaxial layer engu-10 µm kanye nokugxiliswa kwe-doping komnikeli okungu-1 × 1016 cm–3 kusetshenziswe njengesampula.Ngaphambi kokucubungula idivayisi, ama-H+ ions afakwa epuletini namandla okusheshisa angu-0.95 MeV ekamelweni lokushisa ukuya ekujuleni okungaba ngu-10 μm nge-engeli evamile endaweni yepuleti.Ngesikhathi sokufakelwa kwe-proton, kwasetshenziswa imaski epuletini, futhi ipuleti linezingxenye ezingenayo futhi ezinomthamo weproton ongu-1012, 1014, noma 1016 cm-2.Bese, ama-Al ions anemithamo ye-proton engu-1020 kanye no-1017 cm–3 afakwa phezu kwewafa yonke ekujuleni okungu-0–0.2 µm no-0.2–0.5 µm ukusuka phezulu, okulandelwa ukuhushulwa ku-1600°C ukuze kwakheke isivalo sekhabhoni ukuze yakha isendlalelo se-ap.-uhlobo.Kamuva, uhlangothi olungemuva oluthintwayo lwe-Ni lwafakwa ohlangothini lwe-substrate, kuyilapho ukuthintana kwe-Ti/Al okumise okwekama kwe-Ti/Al ngaphambili okwakhiwa yi-photolithography kanye nenqubo yekhasi yafakwa ohlangothini lwe-epitaxial layer.Ekugcineni, ukufakwa kwe-contact annealing kwenziwa ezingeni lokushisa elingu-700 ° C.Ngemva kokusika isinkwa esilucwecwana sibe ama-chips, senza izici zokucindezeleka nokusebenzisa.
Izici ze-I–V ze-PiN diode ezenziwe zabonwa kusetshenziswa i-HP4155B semiconductor parameter analyzer.Njengokucindezeleka kagesi, i-10-millisecond pulsed current ye-212.5 A / cm2 yethulwa amahora angu-2 ngemvamisa ye-10 pulses / sec.Lapho sikhetha ukuminyana okuphansi kwamanje noma imvamisa, asizange sibone ukunwetshwa kwe-1SSF ngisho naku-PiN diode ngaphandle komjovo we-proton.Ngesikhathi se-voltage kagesi esetshenziswayo, izinga lokushisa le-PiN diode licishe libe ngu-70°C ngaphandle kokushisisa ngamabomu, njengoba kuboniswe kuMfanekiso S8.Izithombe ze-Electroluminescent zitholwe ngaphambi nangemuva kwengcindezi kagesi ekumineni kwamanje okungu-25 A/cm2.Isigameko sokudlisela esibukwayo se-synchrotron i-X-ray topography kusetshenziswa i-X-ray ye-monochromatic (λ = 0.15 nm) e-Aichi Synchrotron Radiation Center, i-ag vector ku-BL8S2 yi- -1-128 noma 11-28 (bona isif. 44 ukuze uthole imininingwane) .).
I-voltage frequency ekugqileni kwamanje okuya phambili okungu-2.5 A/cm2 ikhishwa ngesikhawu esingu-0.5 V kufig.2 ngokuya nge-CVC yesifunda ngasinye se-PiN diode.Kusuka enanini elimaphakathi le-Vave yengcindezi kanye nokuchezuka okujwayelekile okungu-σ kwengcindezi, sihlela ijika elivamile lokusabalalisa ngendlela yomugqa onamachashazi kuMfanekiso 2 sisebenzisa isibalo esilandelayo:
Werner, MR & Fahrner, WR Review on material, microsensors, systems and devices for high-temperature kanye nezinhlelo zokusebenza zemvelo ezinokhahlo. Werner, MR & Fahrner, WR Review on material, microsensors, systems and devices for high-temperature kanye nezinhlelo zokusebenza zemvelo ezinokhahlo.U-Werner, MR noFarner, WR Uhlolojikelele lwezinto, ama-microsensors, amasistimu namadivayisi wezinhlelo zokusebenza ezisezingeni lokushisa eliphezulu nasezindaweni ezinokhahlo. Werner, MR & Fahrner, WR 对用于高温和恶劣环境应用的材料、微传感器、系统和设备的评论。 Werner, MR & Fahrner, WR Ukubuyekezwa kwezinto, ama-microsensors, amasistimu namadivayisi wamazinga okushisa aphezulu kanye nezinhlelo zokusebenza zemvelo ezimbi.Werner, MR noFarner, WR Uhlolojikelele lwezinto, ama-microsensors, amasistimu namadivayisi wezinhlelo zokusebenza emazingeni okushisa aphezulu nezimo ezinzima.IEEE Trans.I-elekthronikhi yezimboni.48, 249–257 (2001).
I-Kimoto, T. & Cooper, JA Okuyisisekelo Se-Silicon Carbide Technology Okuyisisekelo se-Silicon Carbide Technology: Ukukhula, Ukulinganisa, Amadivayisi Nezicelo Vol. I-Kimoto, T. & Cooper, JA Okuyisisekelo Se-Silicon Carbide Technology Okuyisisekelo se-Silicon Carbide Technology: Ukukhula, Ukulinganisa, Amadivayisi Nezicelo Vol.Kimoto, T. and Cooper, JA Basics of Silicon Carbide Technology Basics of Silicon Carbide Technology: Ukukhula, Izimpawu, Amadivayisi Nezicelo Vol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 I-Kimoto, T. & Cooper, i-JA Carbon化silicon isisekelo sobuchwepheshe be-Carbon化silicon isisekelo sobuchwepheshe: ukukhula, incazelo, imishini kanye nevolumu yesicelo.Kimoto, T. and Cooper, J. Basics of Silicon Carbide Technology Basics of Silicon Carbide Technology: Ukukhula, Izimpawu, Izinsiza kanye Nezicelo Vol.252 (Wiley Singapore Pte Ltd, 2014).
I-Veliadis, V. I-Large Scale Commercialization ye-SiC: Isimo Se-Quo Nezithiyo Okufanele Zinqotshwe.u-alma mater.isayensi.Inkundla 1062, 125–130 (2022).
I-Broughton, J., Smet, V., Tummala, RR & Joshi, YK Ukubuyekezwa kobuchwepheshe bokupakisha obushisayo bama-electronics amandla ezimoto ngezinjongo zokudonsa. I-Broughton, J., Smet, V., Tummala, RR & Joshi, YK Ukubuyekezwa kobuchwepheshe bokupakisha obushisayo bama-electronics amandla ezimoto ngezinjongo zokudonsa.I-Broughton, J., Smet, V., Tummala, RR ne-Joshi, i-YK Uhlolojikelele lobuchwepheshe bokupakisha obushisayo bama-electronics amandla ezimoto ngezinjongo zokudonsa. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的汽车电力电子热封装技术的回顾. Broughton, J., Smet, V., Tummala, RR & Joshi, YKI-Broughton, J., Smet, V., Tummala, RR ne-Joshi, i-YK Uhlolojikelele lobuchwepheshe bokupakisha obushisayo bama-elekthronikhi wamandla ezimoto ngezinjongo zokudonsa.J. Electronic.Iphakheji.umbono.ASME 140, 1-11 (2018).
I-Sato, K., Kato, H. & Fukushima, T. Ukuthuthukiswa kwe-SiC kusetshenziswe isistimu yokudonsa yesizukulwane esilandelayo sezitimela ezihamba ngesivinini esiphezulu zase-Shinkansen. I-Sato, K., Kato, H. & Fukushima, T. Ukuthuthukiswa kwe-SiC kusetshenziswe isistimu yokudonsa yesizukulwane esilandelayo sezitimela ezihamba ngesivinini esiphezulu zase-Shinkansen.I-Sato K., Kato H. kanye ne-Fukushima T. Ukuthuthukiswa kwesistimu yokudonsa ye-SiC esetshenziswayo yezitimela zesizukulwane esilandelayo ezinesivinini esikhulu ze-Shinkansen.U-Sato K., u-Kato H. kanye no-Fukushima T. Ukuthuthukiswa Kwesistimu Yokudonsa Yezicelo ze-SiC ze-Next Generation High-Speed Shinkansen Izitimela.Isithasiselo IEEJ J. Ind. 9, 453–459 (2020).
I-Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Izinselele zokuthola amadivayisi kagesi e-SiC athembeke kakhulu: Kusukela kusimo samanje nezinkinga zamawafa e-SiC. I-Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Izinselele zokuthola amadivayisi kagesi e-SiC athembeke kakhulu: Kusukela kusimo samanje nezinkinga zamawafa e-SiC.I-Senzaki, J., Hayashi, S., Yonezawa, Y. kanye ne-Okumura, H. Izinkinga ekusetshenzisweni kwamadivayisi kagesi we-SiC athembeke kakhulu: kusukela kusimo samanje kanye nenkinga ye-wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. 实现高可靠性SiC 功率器件的挑战：从SiC 晶圆的现状和问题來看。 Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Inselele yokuzuza ukuthembeka okuphezulu kumadivayisi kagesi we-SiC: kusukela ku-SiC 晶圆的电视和问题设计。U-Senzaki J, u-Hayashi S, u-Yonezawa Y. kanye no-Okumura H. Izinselele ekuthuthukisweni kwamadivayisi wamandla athembeke kakhulu asekelwe ku-silicon carbide: ukubuyekezwa kwesimo nezinkinga ezihlobene nama-wafers e-silicon carbide.Ku-2018 IEEE International Symposium on Reliability Physics (IRPS).(Senzaki, J. et al. ed.) 3B.3-1-3B.3-6 (IEEE, 2018).
UKim, D. & Sung, W. Kuthuthukiswe ukuma kwesekethe emfishane ku-1.2kV 4H-SiC MOSFET kusetshenziswa i-P-well ejulile efakwe ngokufakwa kweshaneli. UKim, D. & Sung, W. Kuthuthukiswe ukuma kwesekethe emfishane ku-1.2kV 4H-SiC MOSFET kusetshenziswa i-P-well ejulile efakwe ngokufakwa kweshaneli.U-Kim, D. no-Sung, V. Kuthuthukiswe ukuvikeleka kwe-short-circuit ye-1.2 kV 4H-SiC MOSFET kusetshenziswa i-P-well ejulile efakwe ngokufakwa kwesiteshi. UKim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性。 UKim, D. & Sung, W. P 阱提高了1.2kV 4H-SiC MOSFETU-Kim, D. no-Sung, V. Kuthuthukiswe ukubekezelela i-short-circuit yama-MOSFET angu-1.2 kV 4H-SiC kusetshenziswa ama-P-wells ajulile ngokufakwa kwesiteshi.IEEE Electronic Devices Lett.42, 1822–1825 (2021).
Skowronski M. et al.Ukunyakaza okuthuthukisiwe kabusha kokukhubazeka kuma-pn diode we-4H-SiC achemele phambili.J. Isicelo.i-physics.92, 4699–4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Dislocation conversion in 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Dislocation conversion in 4H silicon carbide epitaxy.I-Ha S., i-Meszkowski P., i-Skowronski M. kanye ne-Rowland LB Ukuguqulwa kokususwa ngesikhathi se-4H ye-silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBInguquko ye-Dislocation 4H ku-silicon carbide epitaxy.J. Crystal.Ukukhula 244, 257–266 (2002).
I-Skowronski, M. & Ha, S. Ukucekelwa phansi kwamadivayisi ane-hexagonal silicon-carbide-based bipolar. I-Skowronski, M. & Ha, S. Ukucekelwa phansi kwamadivayisi ane-hexagonal silicon-carbide-based bipolar.I-Skowronski M. kanye ne-Ha S. Ukucekelwa phansi kwamadivayisi ane-hexagonal bipolar ngokusekelwe ku-silicon carbide. Skowronski, M. & Ha, S. 六方碳化硅基双极器件的降解. Skowronski M. & Ha S.I-Skowronski M. kanye ne-Ha S. Ukucekelwa phansi kwamadivayisi ane-hexagonal bipolar ngokusekelwe ku-silicon carbide.J. Isicelo.i-physics 99, 011101 (2006).
Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.U-Agarwal A., u-Fatima H., u-Heini S. no-Ryu S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.U-Agarwal A., u-Fatima H., u-Heini S. no-Ryu S.-H.Indlela entsha yokucekela phansi yama-MOSFET anamandla kagesi e-SiC.IEEE Electronic Devices Lett.28, 587–589 (2007).
Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Emandleni okushayela ukunyakaza kwephutha lokunqwabelanisa okubangelwa ukuhlanganisa futhi ku-4H–SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Emandleni okushayela ukunyakaza kwephutha lokunqwabelanisa okubangelwa ukuhlanganisa kabusha ku-4H-SiC.I-Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, ne-Hobart, KD Emandleni okushayela okunyakaza kwephutha lokunqwabelanisa okubangelwa ukuhlanganisa futhi ku-4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力。 Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDI-Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, ne-Hobart, KD, Ekuqhubekeleni phambili kokunyakaza kwephutha lokunqwabelanisa okubangelwa ukuhlanganisa futhi ku-4H-SiC.J. Isicelo.i-physics.108, 044503 (2010).
Iijima, A. & Kimoto, T. Imodeli yamandla kagesi yokwakheka kwephutha lokunqwabelana kwe-Shockley okukodwa kumakristalu angu-4H-SiC. Iijima, A. & Kimoto, T. Imodeli yamandla kagesi yokwakheka kwephutha lokunqwabelana kwe-Shockley okukodwa kumakristalu angu-4H-SiC.Iijima, A. kanye ne-Kimoto, imodeli ye-Electron-energy yokwakha ukukhubazeka okukodwa kokupakisha kwe-Shockley kumakristalu e-4H-SiC. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型. Iijima, A. & Kimoto, T. Imodeli yamandla kagesi ye-Shockley stacking eyodwa yokwakheka kwephutha ku-4H-SiC crystal.Iijima, A. kanye ne-Kimoto, T. Imodeli ye-Electron-energy yokwakhiwa kwesici esisodwa se-Shockley epakisha kumakristalu e-4H-SiC.J. Isicelo.i-physics 126, 105703 (2019).
Iijima, A. & Kimoto, T. Isilinganiso sesimo esibucayi sokunwetshwa/ukufinyezwa kwamaphutha e-Shockley stacking eyodwa kuma-diode angu-4H-SiC PiN. Iijima, A. & Kimoto, T. Isilinganiso sesimo esibucayi sokunwetshwa/ukufinyezwa kwamaphutha e-Shockley stacking eyodwa kuma-diode angu-4H-SiC PiN.Iijima, A. kanye ne-Kimoto, T. Isilinganiso sesimo esibucayi sokunwetshwa/ukucindezelwa kokukhubazeka kokupakisha okukodwa kwe-Shockley kuma-4H-SiC PiN-diodes. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件。 Iijima, A. & Kimoto, T. Isilinganiso sezimo zokunwetshwa/zokufinyezwa kwesendlalelo esisodwa se-Shockley kuma-diode angu-4H-SiC PiN.Iijima, A. kanye ne-Kimoto, T. Isilinganiso sezimo ezibucayi zokunwetshwa/ukucindezelwa kwesici esisodwa sokupakisha i-Shockley ku-4H-SiC PiN-diodes.isicelo physics Wright.116, 092105 (2020).
I-Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Imodeli ye-Quantum yesenzo esihle sokwakheka kwephutha elilodwa lokunqwabelanisa i-Shockley ku-crystal ye-4H-SiC ngaphansi kwezimo ezingalingani. I-Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Imodeli ye-Quantum yesenzo esihle sokwakheka kwephutha elilodwa lokunqwabelanisa i-Shockley ku-crystal ye-4H-SiC ngaphansi kwezimo ezingalingani.I-Mannen Y., Shimada K., Asada K., kanye no-Otani N. Imodeli ye-quantum ye-quantum yokwakha iphutha elilodwa le-Shockley stacking ku-crystal ye-4H-SiC ngaphansi kwezimo ezingavumelekile.U-Mannen Y., u-Shimada K., u-Asada K. kanye no-Otani N. Imodeli ye-Quantum yokusebenzisana kahle yokwakhiwa kwamaphutha okunqwabelanisa e-Shockley okukodwa kumakristalu angu-4H-SiC ngaphansi kwezimo ezingavumelekile.J. Isicelo.i-physics.125, 085705 (2019).
I-Galeckas, A., Linnros, J. & Pirouz, P. Amaphutha esitaki enziwe kabusha: Ubufakazi bendlela evamile ku-SiC ene-hexagonal. I-Galeckas, A., Linnros, J. & Pirouz, P. Amaphutha esitaki enziwe kabusha: Ubufakazi bendlela evamile ku-SiC ene-hexagonal.I-Galeckas, A., Linnros, J. kanye ne-Pirouz, P. Amaphutha Okupakisha Okubangelwa Ukuhlangana kabusha: Ubufakazi Bendlela Evamile Ye-Hexagonal SiC. Galeckas, A., Linnros, J. & Pirouz, P. 复合诱导的堆垛层错：六方SiC 中一般机制的证据。 Galeckas, A., Linnros, J. & Pirouz, P. Ubufakazi bendlela evamile yesendlalelo sokunqwabelanisa sokungeniswa esiyinhlanganisela: 六方SiC.I-Galeckas, A., Linnros, J. kanye ne-Pirouz, P. Amaphutha Okupakisha Okubangelwa Ukuhlangana kabusha: Ubufakazi Bendlela Evamile Ye-Hexagonal SiC.physics Umfundisi Wright.96, 025502 (2006).
Ishikawa, Y., Sudo, M., Yao, Y.-Z., Sugawara, Y. & Kato, M. Ukunwetshwa kwephutha elilodwa le-Shockley stacking ku-4H-SiC (11 2 ¯0) ungqimba lwe-epitaxial oludalwe i-electron i-beam irradiation.Ishikawa , Y. , M. Sudo , Y.-Z beam irradiation.Ishikawa, Y., Sudo M., Y.-Z Psychology.Ibhokisi, Ю., M.Судо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
I-Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Ukubhekwa kokuhlanganiswa kwenkampani yenethiwekhi kumaphutha okustakika okukodwa kwe-Shockley kanye nasekuhlukaniseni ingxenye ku-4H-SiC. I-Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Ukubhekwa kokuhlanganiswa kwenkampani yenethiwekhi kumaphutha okustakika okukodwa kwe-Shockley kanye nasekuhlukaniseni ingxenye ku-4H-SiC.Kato M., Katahira S., Itikawa Y., Harada S. kanye no-Kimoto T. Ukubhekwa Kwenkampani Yenethiwekhi Kabusha Emaphutheni Okupakisha Okukodwa kwe-Shockley kanye Nokususwa Kwengxenye ku-4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley 堆垛层错和4H-SiC 部分位错中载流子复合的观察. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley stacking kanye ne-4H-SiC ingxenye 位错中载流子去生的可以。Kato M., Katahira S., Itikawa Y., Harada S. kanye no-Kimoto T. Ukubhekwa Kwenkampani Yenethiwekhi Kabusha Emaphutheni Okupakisha Okukodwa kwe-Shockley kanye Nokususwa Kwengxenye ku-4H-SiC.J. Isicelo.i-physics 124, 095702 (2018).
I-Kimoto, T. & Watanabe, H. Ubunjiniyela besici kubuchwepheshe be-SiC kumadivayisi anamandla kagesi aphezulu. I-Kimoto, T. & Watanabe, H. Ubunjiniyela besici kubuchwepheshe be-SiC kumadivayisi anamandla kagesi aphezulu.I-Kimoto, T. kanye ne-Watanabe, H. Ukuthuthukiswa kokukhubazeka kubuchwepheshe be-SiC kumadivayisi anamandla kagesi aphezulu. Kimoto, T. & Watanabe, H. 用于高压功率器件的SiC 技术中的缺陷工程。 I-Kimoto, T. & Watanabe, H. Ubunjiniyela besici kubuchwepheshe be-SiC kumadivayisi anamandla kagesi aphezulu.I-Kimoto, T. kanye ne-Watanabe, H. Ukuthuthukiswa kokukhubazeka kubuchwepheshe be-SiC kumadivayisi anamandla kagesi aphezulu.isicelo se-physics Express 13, 120101 (2020).
I-Zhang, Z. & Sudarshan, i-TS Basal plane dislocation-free epitaxy ye-silicon carbide. I-Zhang, Z. & Sudarshan, i-TS Basal plane dislocation-free epitaxy ye-silicon carbide.I-Zhang Z. kanye ne-Sudarshan TS I-epitaxy-free epitaxy ye-silicon carbide endizeni ye-basal. U-Zhang, Z. & Sudarshan, TS 碳化硅基面无位错外延. I-Zhang, Z. & Sudarshan, TSI-Zhang Z. kanye ne-Sudarshan TS Dislocation-free epitaxy yezindiza ze-silicon carbide basal.isitatimende.i-physics.Wright.87, 151913 (2005).
I-Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism yokuqeda ukugudluka kwendiza ye-basal kumafilimu amancane e-SiC nge-epitaxy ku-substrate eqoshiwe. I-Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism yokuqeda ukugudluka kwendiza ye-basal kumafilimu amancane e-SiC nge-epitaxy ku-substrate eqoshiwe.U-Zhang Z., u-Moulton E. kanye ne-Sudarshan TS Mechanism yokuqeda ukususwa kwendiza eyisisekelo kumafilimu amancane e-SiC nge-epitaxy ku-substrate eqoshiwe. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制。 U-Zhang, Z., Moulton, E. & Sudarshan, TS Indlela yokuqeda ifilimu elincanyana le-SiC ngokufaka i-substrate.U-Zhang Z., u-Moulton E. kanye ne-Sudarshan TS Mechanism yokuqeda ukususwa kwendiza eyisisekelo kumafilimu amancane e-SiC nge-epitaxy kuma-substrates aqoshiwe.isicelo physics Wright.89, 081910 (2006).
U-Shtalbush RE et al.Ukuphazamiseka kokukhula kuholela ekwehleni kokususwa kwendiza ye-basal phakathi ne-4H-SiC epitaxy.isitatimende.i-physics.Wright.94, 041916 (2009).
I-Zhang, X. & Tsuchida, H. Ukuguqulwa kokugudluzwa kwendiza ye-basal ukuze kube ukugudluka konqenqema kuma-epilayers angu-4H-SiC ngokufaka izinga lokushisa eliphezulu. I-Zhang, X. & Tsuchida, H. Ukuguqulwa kokugudluzwa kwendiza ye-basal ukuze kube ukugudluka konqenqema kuma-epilayers angu-4H-SiC ngokufaka izinga lokushisa eliphezulu.I-Zhang, X. kanye ne-Tsuchida, H. Ukuguqulwa kokugudluzwa kwendiza ye-basal ibe ukugudluzwa konqenqemeni lwezendlalelo ze-4H-SiC ze-epitaxial ngokufakwa kwezinga lokushisa eliphezulu. U-Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiC 外延层中的基面位错转化为螺纹刃位错. U-Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiCI-Zhang, X. kanye ne-Tsuchida, H. Ukuguqulwa kokugudluzwa kwendiza eyisisekelo ibe ukugudluzwa konqenqema lwe-filament ezendlalelo ze-epitaxial ezingu-4H-SiC ngokushisa okuphezulu kwe-annealing.J. Isicelo.i-physics.111, 123512 (2012).
Ingoma, H. & Sudarshan, TS Basal plane dislocation convercation eduzane ne-epilayer/substrate interface ekukhuleni kwe-epitaxial ye-4° off-axis 4H–SiC. Ingoma, H. & Sudarshan, TS Basal plane dislocation convercation eduzane ne-epilayer/substrate interface ekukhuleni kwe-epitaxial ye-4° off-axis 4H–SiC.Ingoma, i-H. ne-Sudarshan, i-TS Ukuguqulwa kokugudluka kwendiza eyisisekelo eduze kwesixhumi esibonakalayo se-epitaxial layer/substrate phakathi nokukhula kwe-off-axis kwe-epitaxial ye-4H–SiC. Ingoma, H. & Sudarshan, TS 在4° 离轴4H-SiC 外延生长中外延层/衬底界面附近的基底平面位错转换。 Ingoma, H. & Sudarshan, TS 在4° 离轴4H-SiC Ingoma, H. & Sudarshan, TSInguquko ye-planar dislocation ye-substrate eduze komngcele we-epitaxial layer/substrate ngesikhathi sokukhula kwe-epitaxial ye-4H-SiC ngaphandle kwe-axis engu-4°.J. Crystal.Ukukhula 371, 94–101 (2013).
Konishi, K. et al.Emazingeni aphezulu, ukusakazeka kwephutha le-basal plane dislocation stacking ku-4H-SiC epitaxial layers kushintsha kube ukuhlukaniswa konqenqema lwe-filament.J. Isicelo.i-physics.114, 014504 (2013).
Konishi, K. et al.Dizayina izendlalelo ze-epitaxial zama-SiC MOSFET angaboli nge-bipolar ngokuthola amasayithi e-nucleation yamaphutha enwetshiwe ekuhlaziyweni kwe-X-ray yesimo sendawo.I-AIP Advanced 12, 035310 (2022).
Lin, S. et al.Umthelela wesakhiwo sokususa indiza eyisisekelo ekusakazweni kwephutha elilodwa lokunqwabelanisa lohlobo lwe-Shockley ngesikhathi sokubola kwamanje okuya phambili kwamaphinikhodi angu-4H-SiC.Japan.J. Isicelo.i-physics.57, 04FR07 (2018).
UThahara, T., et al.Isikhathi esifushane sempilo yenkampani yenethiwekhi ye-nitrogen-rich 4H-SiC epilayers sisetshenziselwa ukucindezela amaphutha ekustaki kuma-PiN diode.J. Isicelo.i-physics.120, 115101 (2016).
U-Tahara, T. et al.Ukuncika kokugxiliswa kwenkampani yenethiwekhi okujovwe kwe-Shockley stacking eyodwa yokusabalalisa iphutha kuma-diode angu-4H-SiC PiN.J. Isicelo.I-Physics 123, 025707 (2018).
I-Mae, S., Tawara, T., Tsuchida, H. & Kato, isistimu ye-M. Microscopic FCA yokulinganisa impilo yenkampani yenethiwekhi exazululwe ngokujulile ku-SiC. I-Mae, S., Tawara, T., Tsuchida, H. & Kato, isistimu ye-M. Microscopic FCA yokulinganisa impilo yenkampani yenethiwekhi exazululwe ngokujulile ku-SiC.I-Mei, S., Tawara, T., Tsuchida, H. kanye ne-Kato, i-M. FCA Microscopic System ye-Depth-Resolved Carrier Lifetime Measurements ku-Silicon Carbide. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. 用于SiC 中深度分辨载流子寿命测量的显微FCA 系统. I-Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Ye-SiC ukujula okumaphakathi 分辨载流子 isikali sokuphila konke的月微FCA uhlelo.I-Mei S., Tawara T., Tsuchida H. kanye nesistimu ye-Kato M. Micro-FCA yokulinganisa impilo yenkampani yenethiwekhi exazululwe ngokujulile ku-silicon carbide.i-alma mater science Forum 924, 269–272 (2018).
Hirayama, T. et al.Ukujula kokusatshalaliswa kwesikhathi sempilo yenkampani yenethiwekhi ezendlalelo ze-epitaxial eziwugqinsi ze-4H-SiC kukalwe ngendlela engonakalisi kusetshenziswa ukulungiswa kwesikhathi sokumuncwa kwenkampani yenethiwekhi yamahhala kanye nokukhanya okweqayo.Shintshela kwisayensi.imitha.91, 123902 (2020).
Isikhathi sokuthumela: Nov-06-2022