Ndatenda nekushanyira Nature.com.Shanduro yebrowser yauri kushandisa ine tsigiro yeCSS shoma.Kuti uwane ruzivo rwakanyanya, tinokurudzira kuti ushandise browser yakagadziridzwa (kana kudzima Compatibility Mode muInternet Explorer).Zvichakadaro, kuti tive nechokwadi chekuenderera mberi nerutsigiro, isu tinopa saiti pasina masitaera uye JavaScript.
4H-SiC yakatengeswa sechinhu chemagetsi semiconductor zvishandiso.Zvisinei, kuvimbika kwenguva refu kwe4H-SiC zvigadziro chinhu chipingamupinyi kukushandiswa kwavo kwakakura, uye dambudziko rinonyanya kukosha rekuvimbika kwe4H-SiC zvishandiso ndeye bipolar degradation.Uku kushatisa kunokonzerwa nekamwe Shockley stacking kukanganisa (1SSF) kuparadzira kwebasal ndege dislocations mu4H-SiC makristasi.Pano, isu tinokurudzira nzira yekudzvinyirira 1SSF yekuwedzera nekudyara maproton pa4H-SiC epitaxial wafers.PiN diodes akagadzirwa pamawafer ane proton implantation airatidza zvakafanana zvazvino-voltage hunhu semadhiodhi asina kuisirwa proton.Mukupesana, iyo 1SSF yekuwedzera inonyatso kudzvanywa muproton-yakaiswa PiN diode.Nekudaro, kuiswa kwemaproton mu4H-SiC epitaxial wafers inzira inoshanda yekudzvanya bipolar degradation ye4H-SiC simba semiconductor zvishandiso uchichengetedza mashandiro echishandiso.Mhedzisiro iyi inobatsira mukugadzirwa kwemidziyo yakavimbika ye4H-SiC.
Silicon carbide (SiC) inozivikanwa zvakanyanya semiconductor zvinhu zvepamusoro-simba, high-frequency semiconductor zvishandiso zvinogona kushanda munzvimbo dzakaoma1.Kune akawanda maSiC polytypes, pakati pawo 4H-SiC ine yakanakisa semiconductor mudziyo wenyama zvimiro senge yakakwira maerekitironi mobility uye yakasimba breakdown yemagetsi field2.4H-SiC mawafer ane dhayamita ye6 inches parizvino ari kutengeswa uye anoshandiswa kugadzirwa kwakawanda kwemagetsi semiconductor zvishandiso3.Madhizaini masisitimu emotokari dzemagetsi nezvitima akagadzirwa achishandisa 4H-SiC4.5 simba semiconductor zvishandiso.Zvisinei, midziyo ye4H-SiC ichiri kutambura kubva kwenguva yakareba yakavimbika nyaya dzakadai sekuparara kwedielectric kana kuvimbika kwepfupi-circuit, 6,7 iyo imwe yenyaya dzinonyanya kuvimbika ndeye bipolar degradation2,8,9,10,11.Uku kusvibiswa kwebipolar kwakawanikwa makore anopfuura makumi maviri apfuura uye rave riri dambudziko mukugadzirwa kweSiC mudziyo.
Bipolar degradation inokonzerwa nekamwechete Shockley stack defect (1SSF) mu 4H-SiC makristasi ane basal plane dislocations (BPDs) inopararira kuburikidza nekugadzirisa kunowedzera dislocation glide (REDG)12,13,14,15,16,17,18,19.Naizvozvo, kana BPD yekuwedzera yakatsikirirwa ku1SSF, 4H-SiC magetsi emagetsi anogona kugadzirwa pasina bipolar degradation.Nzira dzinoverengeka dzakataurwa kudzvanyirira kupararira kweBPD, senge BPD kune Thread Edge Dislocation (TED) shanduko 20,21,22,23,24.Mumazuva ekupedzisira eSiC epitaxial wafers, BPD inonyanya kuwanikwa mu substrate uye kwete mu epitaxial layer nekuda kwekushandurwa kweBPD kuTED panguva yekutanga yekukura epitaxial.Nokudaro, dambudziko rakasara rebipolar degradation ndiko kugoverwa kweBPD mu substrate 25,26,27.Kuiswa kwe "composite reinforcing layer" pakati pe drift layer uye substrate yakarongwa senzira inoshanda yekudzvinyirira BPD kuwedzera mu substrate28, 29, 30, 31. Iyi tambo inowedzera mukana we electron-hole pair recombination mu epitaxial layer uye SiC substrate.Kudzikisa huwandu hwema electron-hole pairs kunoderedza kutyaira kweREDG kuenda kuBPD muchikamu chepasi, saka iyo inoumbwa yekusimbisa layer inogona kudzvanya bipolar degradation.Zvinofanira kucherechedzwa kuti kuiswa kwechigadziko kunosanganisira kuwedzera mari mukugadzirwa kwemawaferi, uye pasina kuiswa kwechifukidzo zvakaoma kudzikisa huwandu hwema electron-hole pairs nekudzora chete kutonga kwehupenyu hwemutakuri.Naizvozvo, pachine kudikanwa kwakasimba kwekugadzira dzimwe nzira dzekudzvinyirira kuti uwane chiyero chiri nani pakati pemutengo wekugadzira mudziyo uye goho.
Nekuti kuwedzera kweBPD kuenda ku1SSF kunoda kufamba kwechikamu chekusagadzikana (PDs), kupinza iyo PD inzira inovimbisa yekudzivisa bipolar degradation.Kunyange zvazvo PD pinning nesimbi tsvina yakashumwa, maFPD mu4H-SiC substrates anowanikwa pane imwe nzvimbo inopfuura 5 μm kubva pamusoro pe epitaxial layer.Pamusoro pezvo, sezvo kupararira kweiyo simbi chero ipi zvayo muSiC idiki, zvakaoma kuti tsvina yesimbi ipararire mu substrate34.Nekuda kwehukuru hweatomiki huremu hwesimbi, kuisirwa ion kwesimbi kwakaomawo.Mukupesana, kana iri hydrogen, chinhu chakareruka, maion (maproton) anogona kuiswa mu4H-SiC kusvika pakadzika inopfuura 10 µm uchishandisa MeV-class accelerator.Naizvozvo, kana proton implantation ichikanganisa PD pinning, saka inogona kushandiswa kudzvanya BPD kupararira mu substrate.Nekudaro, kuisirwa proton kunogona kukuvadza 4H-SiC uye kukonzeresa kuderedzwa kwechishandiso37,38,39,40.
Kukunda kushatiswa kwemudziyo nekuda kwekuisirwa kweproton, kupisa kwepamusoro-tembiricha kunoshandiswa kugadzirisa kukuvadzwa, kwakafanana neannealing nzira inowanzoshandiswa mushure mekugamuchira kuisirwa ion mukugadzira mudziyo1, 40, 41, 42. Kunyangwe yechipiri ion mass spectrometry (SIMS)43 ine yakashuma hydrogen diffusion nekuda kwekukwira-tembiricha annealing, zvinogoneka kuti density yemaatomu ehydrogen pedyo neFD haina kukwana kuona pinning yePR uchishandisa SIMS.Naizvozvo, muchidzidzo ichi, takadyara maproton mu4H-SiC epitaxial wafers pamberi pechigadzirwa chekugadzira, kusanganisira kupisa kwakanyanya.Isu takashandisa maPiN diode seyekuyedza zvigadziriso zvemidziyo uye takaagadzira paproton-yakaiswa 4H-SiC epitaxial wafers.Isu takazoona iyo volt-ampere maitiro ekudzidza kudzikira kwekuita kwechigadzirwa nekuda kwejekiseni reproton.Zvadaro, takaona kuwedzera kwe1SSF mumifananidzo ye electroluminescence (EL) mushure mekushandisa magetsi emagetsi kuPiN diode.Pakupedzisira, isu takasimbisa mhedzisiro yejekiseni reproton pakudzvanywa kwekuwedzera kwe1SSF.
Pamusoro pemuonde.Mufananidzo 1 unoratidza azvino-voltage maitiro (CVCs) ePiN diode pakamuri tembiricha mumatunhu ane uye asina proton implantation isati yapushwa ikozvino.MaPiN diode ane jekiseni reproton anoratidza maitiro ekugadzirisa akafanana nedhiodhi asina jekiseni reproton, kunyangwe iwo IV maitiro akagovaniswa pakati pemadhiodhi.Kuti tiratidze mutsauko pakati pemamiriro ejekiseni, takaronga frequency yevoltage kumberi ikozvino density ye 2.5 A/cm2 (inoenderana ne100 mA) sechiverengero chiitiko sezvakaratidzwa muFigure 2. Iyo curve inofananidzwa nekugoverwa kwakajairika inomiririrwawo. nemutsetse une madota.line.Sezvinoonekwa kubva panhongonya dzemacurves, kupikisa kunowedzera zvishoma pamadhora eproton e1014 uye 1016 cm-2, nepo PiN diode ine proton dose ye1012 cm-2 inoratidza hunhu hwakafanana neusina kuisirwa proton. .Isu takaitawo kuiswa kweproton mushure mekugadzirwa kwePiN diodes iyo isina kuratidza yunifomu electroluminescence nekuda kwekukuvadzwa kwakakonzerwa neproton implantation sezvakaratidzwa muFigure S1 sezvakatsanangurwa muzvidzidzo zvakapfuura37,38,39.Naizvozvo, kuvharira pa1600 ° C mushure mekusimwa kweAl ions inzira inodiwa kugadzira michina yekumisikidza iyo Al acceptor, inogona kugadzirisa kukuvadzwa kwakakonzerwa neproton implantation, izvo zvinoita kuti maCVCs akafanana pakati peakaiswa uye asina kuisirwa proton PiN diodes. .Iyo reverse yazvino frequency pa -5 V inoratidzwawo muMufananidzo S2, hapana mutsauko wakakura pakati pemadiode ane uye asina jekiseni reproton.
Volt-ampere maitiro ePiN diode ane uye asina jekiseni proton pane tembiricha.Ngano inoratidza chiyero cheproton.
Voltage frequency pane yakananga ikozvino 2.5 A/cm2 yePiN diode ine jekiseni uye isina-ijekiseni proton.Mutsetse une madota unofambirana nekugoverwa kwakajairika.
Pamusoro pemuonde.3 inoratidza EL mufananidzo wePiN diode ine density iripo ye25 A/cm2 mushure memagetsi.Usati washandisa pulsed ikozvino mutoro, nzvimbo dzakasviba dze diode hadzina kuonekwa, sezvinoratidzwa mumufananidzo 3. C2.Zvisinei, sezvinoratidzwa mumufananidzo.3a, muPiN diode isina kuisirwa proton, matunhu akati wandei ane mitsetse ine mitsetse yechiedza akaonekwa mushure mekushandisa magetsi emagetsi.Nzvimbo dzakasvibira dzakaita setsvimbo dzinoonekwa mumifananidzo yeEL ye1SSF ichibva kuBPD mune substrate28,29.Pane kudaro, mamwe zvikanganiso zvakatambanudzwa zvakaonekwa muPiN diode nemaproton akaiswa, sezvakaratidzwa muFig. 3b-d.Tichishandisa X-ray topography, takasimbisa kuvapo kwePRs inogona kufamba kubva kuBPD kuenda kune substrate iri panharaunda yevanobatwa muPiN diode pasina proton jekiseni (Fig. 4: mufananidzo uyu usingabvisi electrode yepamusoro (yakatorwa mufananidzo, PR). pasi pema electrode haaonekwe). Naizvozvo, nzvimbo ine rima mumufananidzo weEL inoenderana neyakawedzerwa 1SSF BPD muchikamu chepasi nzvimbo dzakasviba (nguva-inosiyana-siyana EL mifananidzo yePiN diode isina jekiseni reproton uye yakasimwa pa 1014 cm-2) inoratidzwawo muSupplementary Information.
EL mifananidzo yePiN diodes pa25 A/cm2 mushure memaawa maviri emagetsi ekushushikana (a) pasina kuisirwa proton uye ine madhizi akaiswa e (b) 1012 cm-2, (c) 1014 cm-2 uye (d) 1016 cm-2 mapurotoni.
Takaverenga kuwanda kwekuwedzera kwe1SSF nekuverenga nzvimbo dzakasviba dzine micheto yakajeka mumatatu ePiN diode kune imwe neimwe mamiriro, sezvakaratidzwa mumufananidzo 5. Kuwanda kwekuwedzera kwe1SSF kunoderera nekuwedzera kweproton dose, uye kunyange pachiyero che 1012 cm-2, density ye1SSF yakawedzerwa yakadzikira zvakanyanya pane isina kuisirwa PiN diode.
Yakawedzera densities yeSF PiN diodes ine uye isina proton implantation mushure mekurodha ne pulsed current (nyika yega yega yaisanganisira matatu akaremerwa diode).
Kupfupisa hupenyu hwemutakuri kunokanganisawo kudzvinyirira kwekuwedzera, uye jekiseni reproton rinoderedza hupenyu hwemutakuri32,36.Takacherechedza hupenyu hwemutakuri mune epitaxial layer 60 µm gobvu ine jekiseni maproton e1014 cm-2.Kubva panguva yekutanga yehupenyu hwekutakura, kunyange zvazvo kuiswa kunoderedza kukosha kusvika ~ 10%, annealing inotevera inoidzorera ku ~ 50%, sezvakaratidzwa muFig. S7.Naizvozvo, hupenyu hwemutakuri, hwakaderedzwa nekuda kwekuiswa kweproton, inodzoreredzwa nepamusoro-tembiricha annealing.Kunyangwe kudzikiswa ne50% kwehupenyu hwekutakura kuchidzvinyirirawo kupararira kwekukanganisa kwakarongeka, maitiro eI-V, ayo anowanzoenderana nehupenyu hwemutakuri, anoratidza misiyano midiki pakati pemajekiseni uye asina kuisirwa diode.Naizvozvo, isu tinotenda kuti PD anchoring inoita basa mukudzivisa 1SSF kuwedzera.
Kunyange zvazvo SIMS isina kuona hydrogen mushure mekuvhara pa 1600 ° C, sezvakataurwa mune zvidzidzo zvekare, takaona kuitika kweproton implantation pakudzvinyirirwa kwe1SSF kuwedzera, sezvakaratidzwa muFigure 1 uye 4. 3, 4. Nokudaro, tinotenda kuti iyo PD inomiswa nemaatomu ehydrogen ane density iri pasi pemuganhu wekuona weSIMS (2 × 1016 cm-3) kana kuremara kwepoinzi kunokonzerwa nekuiswa.Izvo zvinofanirwa kucherechedzwa kuti isu hatina kusimbisa kuwedzera kwe-on-state kuramba nekuda kwekurebesa kwe1SSF mushure mekuvhiya kwazvino mutoro.Izvi zvinogona kunge zvichikonzerwa nekusakwana ohmic kushamwaridzana kwakaitwa uchishandisa maitiro edu, ayo achabviswa munguva pfupi iri kutevera.
Mukupedzisa, takagadzira nzira yekudzima yekuwedzera iyo BPD kusvika ku1SSF mu4H-SiC PiN diodes tichishandisa proton implantation isati yagadzirwa.Kuparara kwehunhu hweI-V panguva yekuiswa kweproton hakuna kukosha, kunyanya pachiyero cheproton che 1012 cm–2, asi mhedzisiro yekudzvinyirira kuwedzera kwe1SSF yakakosha.Kunyangwe muchidzidzo chino takagadzira 10 µm mukobvu PiN diode neproton kuisirwa kusvika pakadzika 10 µm, zvichiri kugoneka kuwedzeredza mamiriro ekudyara nekuashandisa kugadzira mamwe marudzi e4H-SiC zvishandiso.Kuwedzera mari yekugadzira mudziyo panguva yekuiswa kweproton kunofanirwa kutariswa, asi ichafanana neiyo yekuisirwa aluminium ion, inova ndiyo nzira huru yekugadzira ye4H-SiC magetsi emagetsi.Nekudaro, kuisirwa proton kusati kwagadziriswa mudziyo inzira inogoneka yekugadzira 4H-SiC bipolar magetsi maturusi pasina kuora.
A 4-inch n-type 4H-SiC wafer ine epitaxial layer gobvu ye10 µm uye donor doping concentration ye1 × 1016 cm-3 yakashandiswa semuenzaniso.Asati agadzirisa mudziyo, H+ ions yakaiswa mundiro ine simba rekumhanyisa re 0.95 MeV pane tembiricha yekamuri kusvika pakadzika hunosvika gumi μm pakona yakajairika kune iyo plate pamusoro.Panguva yekuisirwa proton, mask pandiro yakashandiswa, uye ndiro yaive nezvikamu zvisina uye ine proton dose ye1012, 1014, kana 1016 cm-2.Zvadaro, maAl ions ane maproton doses e1020 uye 1017 cm–3 akaiswa pamusoro pechingwa chese kusvika pakadzika 0-0.2 µm uye 0.2–0.5 µm kubva pamusoro, zvichiteverwa nekunyungudutswa pa1600°C kugadzira kabhoni kavha fomu ap layer.-type.Zvadaro, rutivi rwekumashure rweNi contact rwakaiswa padivi re substrate, ukuwo 2.0 mm × 2.0 mm muzinga-wakaumbwa neTi/Al pamberi pedivi rekubatana rakagadzirwa nephotolithography uye peel process yakaiswa padivi re epitaxial layer.Pakupedzisira, kubata annealing kunoitwa pakupisa kwe700 ° C.Mushure mekucheka wafer kuita machipisi, takaita kushushikana hunhu uye kushandisa.
Iyo I-V maitiro eakagadzirwa ePiN diode akaonekwa pachishandiswa HP4155B semiconductor parameter analyzer.Sekunetseka kwemagetsi, 10-millisecond pulsed ikozvino ye212.5 A / cm2 yakaunzwa kwemaawa maviri pane imwe nguva ye10 pulses / sec.Patakasarudza yakaderera ikozvino density kana frequency, isu hatina kuona kuwedzera kwe1SSF kunyangwe muPiN diode isina jekiseni reproton.Munguva yemagetsi emagetsi anoshandiswa, tembiricha yePiN diode yakatenderedza 70 ° C pasina kudziyisa nemaune, sezvakaratidzwa mumufananidzo S8.Mifananidzo yeElectroluminescent yakawanikwa isati yasvika uye mushure mekumanikidzwa kwemagetsi pane yazvino density ye25 A / cm2.Synchrotron reflection grazing incidence X-ray topography using monochromatic X-ray beam (λ = 0.15 nm) paAichi Synchrotron Radiation Center, iyo ag vector muBL8S2 ndeye -1-128 kana 11-28 (ona ref. 44 kuti uwane ruzivo) .)
Iyo voltage frequency pairi kumberi ikozvino density ye2.5 A / cm2 inotorwa nepakati ye 0.5 V mufig.2 zvinoenderana neCVC yenzvimbo imwe neimwe yePiN diode.Kubva pakukosha kwekunetseka kweVave uye kutsauka kwakajairwa σ yekushushikana, tinoronga yakajairika yekugovera curve muchimiro chemutsara une doti mumufananidzo 2 tichishandisa inotevera equation:
Werner, MR & Fahrner, WR Ongororo pamusoro pezvinhu, microsensors, masisitimu uye zvishandiso zvepamusoro-tembiricha uye hutsinye-zvakatipoteredza zvikumbiro. Werner, MR & Fahrner, WR Ongororo pamusoro pezvinhu, microsensors, masisitimu uye zvishandiso zvepamusoro-tembiricha uye hutsinye-zvakatipoteredza zvikumbiro.Werner, MR naFarner, WR Overview yezvishandiso, microsensors, masisitimu uye zvishandiso zvekushandisa mukupisa kwakanyanya uye nharaunda dzakaoma. Werner, MR & Fahrner, WR 对用于高温和恶劣环境应用的材料、微传感器、系统和设备的评论。 Werner, MR & Fahrner, WR Ongororo yezvishandiso, microsensors, masisitimu uye zvishandiso zvekushisa kwakanyanya uye kwakashata kwezvakatipoteredza mashandisirwo.Werner, MR naFarner, WR Overview yezvishandiso, microsensors, masisitimu uye zvishandiso zvekushandisa pakupisa kwakanyanya uye mamiriro akaomarara.IEEE Trans.Industrial electronics.48, 249–257 (2001).
Kimoto, T. & Cooper, JA Zvinokosha zveSilicon Carbide Technology Zvinokosha zveSilicon Carbide Technology: Kukura, Hunhu, Zvishandiso uye Zvishandiso Vol. Kimoto, T. & Cooper, JA Zvinokosha zveSilicon Carbide Technology Zvinokosha zveSilicon Carbide Technology: Kukura, Hunhu, Zvishandiso uye Zvishandiso Vol.Kimoto, T. uye Cooper, JA Nheyo dzeSilicon Carbide Technology Nheyo dzeSilicon Carbide Technology: Kukura, Hunhu, Zvishandiso uye Zvikumbiro Vol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 Kimoto, T. & Cooper, JA Carbon化silicon tekinoroji base Carbon化silicon tekinoroji base: kukura, tsananguro, midziyo uye vhoriyamu yekushandisa.Kimoto, T. uye Cooper, J. Nheyo dzeSilicon Carbide Technology Nheyo dzeSilicon Carbide Technology: Kukura, Hunhu, Zvishandiso uye Zvishandiso Vol.252 (Wiley Singapore Pte Ltd, 2014).
Veliadis, V. Yakakura Scale Commercialization yeSiC: Mamiriro Ezvakaita uye Zvipingamupinyi Zvinofanira Kukundwa.alma mater.sainzi.Forum 1062, 125–130 (2022).
Broughton, J., Smet, V., Tummala, RR & Joshi, YK Ongororo yemafuta ekurongedza matekinoroji emagetsi emagetsi emagetsi ezvinangwa zvekudhonza. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Ongororo yemafuta ekurongedza matekinoroji emagetsi emagetsi emagetsi ezvinangwa zvekudhonza.Broughton, J., Smet, V., Tummala, RR naJoshi, YK Mhedziso yematekinoroji ekuputira emagetsi emagetsi emagetsi ezvinangwa zvekudhonza. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的汽车电力电子热封装技术的回顾. Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR naJoshi, YK Overview ye thermal packaging tekinoroji yemagetsi emagetsi emagetsi ezvinangwa zvekudhonza.J. Electron.Package.Trance.ASME 140, 1-11 (2018).
Sato, K., Kato, H. & Fukushima, T. Budiriro yeSiC yakashandisirwa traction system yechizvarwa chinotevera Shinkansen zvitima zvinomhanya. Sato, K., Kato, H. & Fukushima, T. Budiriro yeSiC yakashandisirwa traction system yechizvarwa chinotevera Shinkansen zvitima zvinomhanya.Sato K., Kato H. uye Fukushima T. Kuvandudzwa kweSiC traction system yakashandiswa yechizvarwa chinotevera chezvitima zveShinkansen.Sato K., Kato H. uye Fukushima T. Traction System Development yeSiC Applications for Next Generation High-Speed Shinkansen Trains.Appendix IEEJ J. Ind. 9, 453–459 (2020).
Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Matambudziko ekuona anovimbika zvakanyanya eSiC magetsi maturusi: Kubva pazvino mamiriro uye nyaya dzeSiC wafers. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Matambudziko ekuona anovimbika zvakanyanya eSiC magetsi maturusi: Kubva pazvino mamiriro uye nyaya dzeSiC wafers.Senzaki, J., Hayashi, S., Yonezawa, Y. uye Okumura, H. Matambudziko mukushandiswa kwesimba rakavimbika reSiC zvishandiso: kutanga kubva kune yazvino mamiriro uye dambudziko rewafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. 实现高可靠性SiC 功率器件的挑战：从SiC 晶圆的现状和问题來看。 Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Dambudziko rekuwana kuvimbika kwepamusoro muSiC midziyo yemagetsi: kubva kuSiC 晶圆的电视和问题设计。Senzaki J, Hayashi S, Yonezawa Y. uye Okumura H. Matambudziko mukugadzirwa kwepamusoro-yakavimbika magetsi emagetsi akavakirwa pasilicon carbide: kuongororwa kwemamiriro ezvinhu uye matambudziko ane chokuita nesilicon carbide wafers.Pa2018 IEEE International Symposium paKuvimbika Fizikisi (IRPS).(Senzaki, J. et al. ed.) 3B.3-1-3B.3-6 (IEEE, 2018).
Kim, D. & Sung, W. Yakanatsiridza kupfupika-kwepakati ruggedness ye 1.2kV 4H-SiC MOSFET uchishandisa yakadzika P-yakaitwa nechannel kuisirwa. Kim, D. & Sung, W. Yakanatsiridza kupfupika-kwepakati ruggedness ye 1.2kV 4H-SiC MOSFET uchishandisa yakadzika P-yakaitwa nechannel kuisirwa.Kim, D. naSung, V. Yakanatsiridza kudzivirirwa kwedziviriro yenguva pfupi ye1.2 kV 4H-SiC MOSFET vachishandisa yakadzika P-inoiswa nekuiswa kwechiteshi. Kim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性. Kim, D. & Sung, W. P 阱提高了1.2kV 4H-SiC MOSFETKim, D. uye Sung, V. Yakavandudza kushivirira kwechikamu chiduku che 1.2 kV 4H-SiC MOSFETs vachishandisa makadzika eP-matsime nekuisa nzira.IEEE Electronic Devices Lett.42, 1822–1825 (2021).
Skowronski M. et al.Recombination-enhanced motion of defects in forward-biased 4H-SiC pn diodes.J. Application.physics.92, 4699–4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Dislocation conversion mu4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Dislocation conversion mu4H silicon carbide epitaxy.Ha S., Meszkowski P., Skowronski M. uye Rowland LB Dislocation shanduko panguva ye4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBDislocation shanduko 4H musilicon carbide epitaxy.J. Crystal.Kukura 244, 257–266 (2002).
Skowronski, M. & Ha, S. Kuparara kwehexagonal silicon-carbide-based bipolar devices. Skowronski, M. & Ha, S. Kuparara kwehexagonal silicon-carbide-based bipolar devices.Skowronski M. uye Ha S. Kushatiswa kwehexagonal bipolar zvishandiso zvinoenderana nesilicon carbide. Skowronski, M. & Ha, S. 六方碳化硅基双极器件的降解. Skowronski M. & Ha S.Skowronski M. uye Ha S. Kushatiswa kwehexagonal bipolar zvishandiso zvinoenderana nesilicon carbide.J. Application.fizikisi 99, 011101 (2006).
Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. naRyu S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. naRyu S.-H.Iyo nyowani yekushatisa mashandiro epamusoro-voltage SiC simba MOSFETs.IEEE Electronic Devices Lett.28, 587–589 (2007).
Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Pamusoro pesimba rekufambisa recombination-induced stacking fault motion mu4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Pamusoro pesimba rekufambisa recombination-induced stacking fault motion mu4H-SiC.Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, uye Hobart, KD Pamusoro pesimba rekufambisa recombination-induced stacking fault motion mu4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, uye Hobart, KD, Pamusoro pesimba rekufambisa recombination-induced stacking fault motion mu4H-SiC.J. Application.physics.108, 044503 (2010).
Iijima, A. & Kimoto, T. Electronic energy model for single Shockley stacking fault formation mu 4H-SiC crystals. Iijima, A. & Kimoto, T. Electronic energy model for single Shockley stacking fault formation mu 4H-SiC crystals.Iijima, A. uye Kimoto, T. Electron-energy model yekuumbwa kwekuremara kumwe chete kweShockley kurongedza mu4H-SiC makristasi. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型. Iijima, A. & Kimoto, T. Electronic energy model of single Shockley stacking fault formation mu 4H-SiC crystal.Iijima, A. uye Kimoto, T. Electron-energy model yekuumbwa kwekuremara kumwe chete Shockley kurongedza mu4H-SiC makristasi.J. Application.fizikisi 126, 105703 (2019).
Iijima, A. & Kimoto, T. Kufungidzira kwemamiriro ezvinhu akaoma ekuwedzera / kuputika kweimwe Shockley stacking zvikanganiso mu4H-SiC PiN diodes. Iijima, A. & Kimoto, T. Kufungidzira kwemamiriro ezvinhu akaoma ekuwedzera / kuputika kweimwe Shockley stacking zvikanganiso mu4H-SiC PiN diodes.Iijima, A. uye Kimoto, T. Estimation of the critical state for expansion/compression of single Shockley packing defects mu4H-SiC PiN-diodes. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件。 Iijima, A. & Kimoto, T. Estimation ye single Shockley stacking layer yekuwedzera/contraction mamiriro mu4H-SiC PiN diodes.Iijima, A. uye Kimoto, T. Kufungidzira kwemamiriro ezvinhu akaoma ekuwedzera / kudzvinyirira kwekusakwana kumwe chete kurongedza Shockley mu4H-SiC PiN-diodes.application fizikisi Wright.116, 092105 (2020).
Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Quantum well action model yekugadzira imwe Shockley stacking kukanganisa mu4H-SiC crystal pasi pemamiriro asina kuenzana. Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Quantum well action model yekugadzira imwe Shockley stacking kukanganisa mu4H-SiC crystal pasi pemamiriro asina kuenzana.Mannen Y., Shimada K., Asada K., uye Otani N. A quantum well modhi yekugadzira imwe Shockley stacking kukanganisa mu4H-SiC crystal pasi pemamiriro asina kuenzana.Mannen Y., Shimada K., Asada K. uye Otani N. Quantum zvakanaka kupindirana modhi yekugadzirwa kweimwe Shockley stacking kukanganisa mu4H-SiC makristasi pasi pemamiriro asina kuenzana.J. Application.physics.125, 085705 (2019).
Galeckas, A., Linnros, J. & Pirouz, P. Recombination-induced stacking kukanganisa: Uchapupu hwehuwandu hwemagetsi mune hexagonal SiC. Galeckas, A., Linnros, J. & Pirouz, P. Recombination-induced stacking kukanganisa: Uchapupu hwehuwandu hwemagetsi mune hexagonal SiC.Galeckas, A., Linnros, J. uye Pirouz, P. Recombination-Induced Packing Defects: Uchapupu hweMechanism Yakafanana muHexagonal SiC. Galeckas, A., Linnros, J. & Pirouz, P. 复合诱导的堆垛层错：六方SiC 中一般机制的证据。 Galeckas, A., Linnros, J. & Pirouz, P. Humbowo hwemaitiro akajairwa emubatanidzwa induction stacking layer: 六方SiC.Galeckas, A., Linnros, J. uye Pirouz, P. Recombination-Induced Packing Defects: Uchapupu hweMechanism Yakafanana muHexagonal SiC.physics Mufundisi Wright.96, 025502 (2006).
Ishikawa, Y., Sudo, M., Yao, Y.-Z., Sugawara, Y. & Kato, M. Kuwedzera kweimwe Shockley stacking kukanganisa mu4H-SiC (11 2 ¯0) epitaxial layer inokonzerwa neelectron beam irradiation.Ishikawa , Y. , M. Sudo , Y.-Z beam irradiation.Ishikawa, Y., Sudo M., Y.-Z Psychology.Bhokisi, Ю., М.Судо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Kucherechedzwa kwemutakuri wekubatanidza mune imwechete Shockley stacking zvikanganiso uye pane chikamu dislocations mu4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Kucherechedzwa kwemutakuri wekubatanidza mune imwechete Shockley stacking zvikanganiso uye pane chikamu dislocations mu4H-SiC.Kato M., Katahira S., Itikawa Y., Harada S. uye Kimoto T. Kucherechedza kweCarrier Recombination muSingle Shockley Packing Defects uye Partial Dislocations mu4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley 堆垛层错和4H-SiC 部分位错中转流子复合的观察. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley stacking stacking和4H-SiC partial 位错中载流子去生的可以。Kato M., Katahira S., Itikawa Y., Harada S. uye Kimoto T. Kucherechedza kweCarrier Recombination muSingle Shockley Packing Defects uye Partial Dislocations mu4H-SiC.J. Application.fizikisi 124, 095702 (2018).
Kimoto, T. & Watanabe, H. Defect engineering muSiC tekinoroji yemagetsi emagetsi epamusoro. Kimoto, T. & Watanabe, H. Defect engineering muSiC tekinoroji yemagetsi emagetsi epamusoro.Kimoto, T. uye Watanabe, H. Kuvandudzwa kwekuremara muSiC tekinoroji yemagetsi emagetsi akakwira-voltage. Kimoto, T. & Watanabe, H. 用于高压功率器件的SiC 技术中的缺陷工程. Kimoto, T. & Watanabe, H. Defect engineering muSiC tekinoroji yemagetsi emagetsi epamusoro.Kimoto, T. uye Watanabe, H. Kuvandudzwa kwekuremara muSiC tekinoroji yemagetsi emagetsi akakwira-voltage.application fizikisi Express 13, 120101 (2020).
Zhang, Z. & Sudarshan, TS Basal plane dislocation-isina epitaxy yesilicon carbide. Zhang, Z. & Sudarshan, TS Basal plane dislocation-isina epitaxy yesilicon carbide.Zhang Z. uye Sudarshan TS Dislocation-isina epitaxy yesilicon carbide mundege yebasa. Zhang, Z. & Sudarshan, TS 碳化硅基面无位错外延. Zhang, Z. & Sudarshan, TSZhang Z. uye Sudarshan TS Dislocation-isina epitaxy yesilicon carbide basal ndege.statement.physics.Wright.87, 151913 (2005).
Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism yekubvisa kusimuka kwendege muSiC mafirimu matete ne epitaxy pane yakamiswa substrate. Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism yekubvisa kusimuka kwendege muSiC mafirimu matete ne epitaxy pane yakamiswa substrate.Zhang Z., Moulton E. uye Sudarshan TS Mechanism yekubvisa kusimuka kwendege muSiC mafirimu matete ne epitaxy pane yakamiswa substrate. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制. Zhang, Z., Moulton, E. & Sudarshan, TS Iyo nzira yekubvisa SiC yakaonda firimu nekuisa iyo substrate.Zhang Z., Moulton E. uye Sudarshan TS Mechanism yekubvisa kusimuka kwendege muSiC mafirimu matete ne epitaxy pane etched substrates.application fizikisi Wright.89, 081910 (2006).
Shtalbush RE et al.Kukanganisa kwekukura kunotungamirira kukudzikira kwebasal plane dislocations panguva ye4H-SiC epitaxy.statement.physics.Wright.94, 041916 (2009).
Zhang, X. & Tsuchida, H. Shanduko yebasal plane dislocations kuita threading edge dislocations mu 4H-SiC epilayers nekukwira kwekushisa annealing. Zhang, X. & Tsuchida, H. Shanduko yebasal plane dislocations kuita threading edge dislocations mu 4H-SiC epilayers nekukwira kwekushisa annealing.Zhang, X. uye Tsuchida, H. Shanduko yebasal plane dislocations kuita threading edge dislocations mu4H-SiC epitaxial layers nekukwira kwekushisa annealing. Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiC 外延层中的基面位错转化為螺纹刃位错. Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiCZhang, X. uye Tsuchida, H. Shanduko ye base plane dislocations kuita filament edge dislocations mu 4H-SiC epitaxial layers nepamusoro tembiricha annealing.J. Application.physics.111, 123512 (2012).
Rwiyo, H. & Sudarshan, TS Basal plane dislocation conversion pedyo ne epilayer / substrate interface mu epitaxial kukura kwe4 ° off-axis 4H-SiC. Rwiyo, H. & Sudarshan, TS Basal plane dislocation conversion pedyo ne epilayer / substrate interface mu epitaxial kukura kwe4 ° off-axis 4H-SiC.Rwiyo, H. uye Sudarshan, TS Shanduko yebasal plane dislocations pedyo ne epitaxial layer / substrate interface panguva ye-off-axis epitaxial kukura kwe4H-SiC. Song, H. & Sudarshan, TS 在4° 离轴4H-SiC 外延生长中外延层/衬底界面附近的基底平面位错转换。 Rwiyo, H. & Sudarshan, TS 在4° 离轴4H-SiC Rwiyo, H. & Sudarshan, TSPlanar dislocation shanduko ye substrate pedyo ne epitaxial layer / substrate muganhu panguva ye epitaxial kukura kwe4H-SiC kunze kwe 4 ° axis.J. Crystal.Kukura 371, 94–101 (2013).
Konishi, K. et al.Pamusoro pezvino, kupararira kweiyo basal plane dislocation stacking fault mu4H-SiC epitaxial layers inoshandura kuita filament edge dislocations.J. Application.physics.114, 014504 (2013).
Konishi, K. et al.Dhizaina epitaxial layers yebipolar isingaparadzike SiC MOSFETs nekuona yakawedzera stacking yekukanganisa nucleation nzvimbo mukushanda X-ray topographic analysis.AIP Yepamusoro 12, 035310 (2022).
Lin, S. et al.Kufurira kweiyo basal plane dislocation chimiro pakuparidzirwa kweimwe Shockley-mhando stacking kukanganisa panguva yepamberi ikozvino kuora kwe4H-SiC pini diode.Japani.J. Application.physics.57, 04FR07 (2018).
Tahara, T., nevamwe.Hupenyu hupfupi hupfupi hwekutakura munitrogen-rich 4H-SiC epilayers inoshandiswa kudzvanyirira zvikanganiso zvakaturikidzana muPiN diode.J. Application.physics.120, 115101 (2016).
Tahara, T. et al.Injected carrier concentration dependent of single Shockley stacking fault propagation mu4H-SiC PiN diodes.J. Application.Fizikisi 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Microscopic FCA system yekuyera-yakagadziriswa mutakuri wehupenyu hwese muSiC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Microscopic FCA system yekuyera-yakagadziriswa mutakuri wehupenyu hwese muSiC.Mei, S., Tawara, T., Tsuchida, H. uye Kato, M. FCA Microscopic System yeDepth-Resolved Carrier Lifetime Measurements muSilicon Carbide. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. 用于SiC 中深度分辨载流子寿命测量的显微FCA 系统. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. YeSiC yepakati-yakadzika 分辨载流子lifetime measurement的月微FCA system.Mei S., Tawara T., Tsuchida H. uye Kato M. Micro-FCA sisitimu yekudzika-yakagadziriswa mutakuri hupenyu hwemazuva ese kuyerwa musilicon carbide.alma mater science Forum 924, 269–272 (2018).
Hirayama, T. et al.Kugovewa kwakadzama kwehupenyu hwemutakuri mune gobvu 4H-SiC epitaxial layers yakayerwa isiri-inoparadza uchishandisa nguva yekugadzirisa yemahara mutakuri absorption uye yakayambuka mwenje.Chinja kusainzi.mita.91, 123902 (2020).
Nguva yekutumira: Nov-06-2022