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4H-sic fuerit commercialized ut materia ad potentia semiconductor cogitationes.Hoc Degradation causatur per unum Shockleking culpa (1SSF) propagationem basalis planum Delocations in 4h-sic crystallis.Hic nos proponimus modum pro suppresso 1SSF expansion per implantationem protons in 4h-sic epitaxial wafers.Pin Diodes fabricata in wafers cum Proton implantatio ostendit idem current, voltage characteres sicut Diodes sine Proton implantationem.In Contra, in 1SSF expansion efficaciter suppressa in protón-implantata ACUS diode.Hoc eventus confert ad progressionem altus reliable 4h-sic cogitationes.
4H-sic wafers cum diameter VI pollices sunt currently commercialized et propter molem productionem potentia semiconductor devices3.Traction systems ad electrica vehicles et impedimenta sunt fabricata per 4H-sic4.5 potentia semiconductor cogitationes.Hoc bipolar degradationem inventa super XX annos et iam diu fuit quaestio in sic fabrica fabrica.
Degradatio bipolaris causatur ab uno acervo Shockley (1SSF) in crystallis 4H-SiC cum dislocationibus planis basalibus (BPDs) propagatis per recombinationem aucta labefactationis labefactationis (REDG) 12,13,14,15,16,17,18,19.Igitur si BPD expansion est supprimitur ad 1SSF, 4h-sic potentia cogitationes potest fieri fictum sine bipolar degradation.Plures modi sunt relatum ad supprimere BPD propagationem, ut BPD ad filo ore peccetur (Marcus) transformatio 20,21,223,24.In lagana proximis SiC epitaxialis, BPD maxime adest in subiecto et non in strato epitaxiali ob conversionem BPD ad TED in initio incrementi epitaxialis.Ideo reliquae quaestio bipolar degradation est distributio BPD in subiecto 25,26,27.Insertio "compositi roborandi tabulatum" inter summa iacuit et substrata proposita est ut efficax methodus expansionis BPD suppressionis in substrato 28, 29, 30, 31. Haec tabula probabilitatem electronico-foraminis in recombinationem in recombinationem auget. epitaxial layer et sic substratum.Reducing numerum electronic-foramine pairs reducit ad driving vis REDG ad BPD in subiecto, ita composita supplemento iacuit potest supprimere bipolar degradation.Animadvertendum est quod immissio accumsan adiuncta gratuita in productione laganae secumfert, et sine iacuit immissione difficile est numerum electronico-foraminis minuere, modo moderante vitam ferebat.Ideo adhuc validum opus est ut aliae rationes suppressionis explicandae sint ad meliorem proportionem inter fabricam fabricandi sumptus et cede.
Quia extensio BPD ad 1SSF requirit motum dislocationum partialium (PDs), nudatum PD est accessus spondens ad degradationem bipolaris inhibendam.Etsi PD fibulationem a metallicis sordibus delata est, FPDs in 4H-SiC subiectae ad distantiam plus quam 5 µm a superficie iacuit epitaxialis sita sunt.Praeterea, cum diffusio coëfficientis cujusvis metalli in SIC valde parva sit, difficile est immunditiam metalli diffundere in substratum34.Debitum ad relative magna nuclei massa metallis, Ion implantatio metallorum est etiam difficile.E contra, in causa hydrogenii, elementum levissimum, iones (protons) in 4H-SiC inseri possunt ad altitudinem plus quam 10 µm utentes accelerator MeV-classis.Igitur si Proton implantatio implantatio PD Pinning, tunc potest esse ad supprimere BPD propagationem in subiecto.Tamen, Proton implantatio potest damnum 4h-sic et effectus in reducta fabrica perficietur Efferentiam 3.
Nos usus ACUS Diodes ut experimentalem fabrica structurae et fabricata eos in Proton-implantata 4h-sic epitaxial wafers.Tum observari Volt ampere characteres studere degradation of fabrica perficientur propter protón iniectio.Deinde, ut observari expansion 1SSF in Electrumininescence (El) imagines post applicando electrica voltage ad pin diode.Denique confirmavimus effectum proton iniectio in suppressionem 1SSF expansion.
In fig.Figura 1 notae hodiernae intentionis (CVCs) diodi diodi cella temperie in regionibus cum et sine protono implantatione ostendit priorum venae pulsantis.PiN diodes cum protón iniectione notas rectificationes similes diodis sine protónis injectione ostendunt, quamvis IV notae inter diodes communes sint.Ad indicandam differentiam inter injectiones conditiones, intentionem frequentiae cogitavimus in densitate currenti 2.5 A/cm2 (respondens 100 mA) ut statisticae insidiae ut in Figura 2. Proximae curvae per distributionem normalem repraesentatur. per punctatum linea.lineam.As can be seen from the peaks of the curves, the on-resistance slightly increases at proton doses of 1014 and 1016 cm-2, while the PiN diode with a proton dose of 1012 cm-2 shows almost the same characteristics as without proton implantation .Therefore, annealing at 1600 °C after implantation of Al ions is a necessary process to fabricate devices to activate the Al acceptor, which can repair the damage caused by proton implantation, which makes the CVCs the same between implanted and non-implanted proton PiN diodes .
Volt, ampere characteres de ACIENS et sine infusum protons ad locus temperatus.Legenda indicat dose protons.
Voltage frequency at Direct Current 2.5 A / CM2 quia ACIODES cum infusum et non-infusum protons.Dormi Distribution linea correspondet.
In fig.III ostendit an elementum a pin diode cum current density XXV a / cm2 post voltage.Antequam applicando pulsed vena onus, in tenebris regiones de diode non serventur, ut ostensum est in Figura 3. C2.Sed ut in fig.3a, in pin diode sine protón implantatio, complures tenebris alba regiones cum lux marginibus observata post applicando an electrica voltage.Tales virga informibus tenebris regiones sunt in el imaginibus 1ssf extendens a BPD in subiecto.Instead, quidam extenditur stacking culpae sunt in ACUS Diodes cum implantata protons, ut ostensum est in Fig. 3b-d.
EL images of PiN diodes at 25 A/cm2 after 2 hours of electrical stress (a) without proton implantation and with implanted doses of (b) 1012 cm-2, (c) 1014 cm-2 and (d) 1016 cm-2 protons.
Densitatem 1SSF dilatatam computavimus, areolis obscuris computatis cum marginibus lucidis in tribus diodis piN pro unaquaque conditione, ut in Figura 5. Densitas 1SSF expansi decrescat cum dosi protono crescentis, et etiam ad dose 1012 cm-2; Densitas expanded 1SSF est significantly minus quam in non-implantata pin diode.
Nobis observavimus carrier saecula in epitaxial layer LX μm densissima cum infusum protons of MXIV cm-II.Ex initial carrier vita, quamquam implantare reduces valorem ad ~ X%, subsequent annexa restituit eam ad ~ L%, ut exhibetur in Fig. S7.Ideo in carrier vitae, reducitur ex Proton implantatio, restituit a summus temperatus annales.Licet a L% reductionem in carrier vitae etiam suppreses propagationem stacking vitiis, in I-characteres, quae sunt typice dependens in carrier vitae, ostendunt solum minor differentias inter infusum et non-diosque differentias inter infusum et non-diosque differentias.Ideo credimus quod PD Anchoring ludit munus inhibentes 1SSF expansion.
Although SIMS did not detect hydrogen after annealing at 1600°C, as reported in previous studies, we observed the effect of proton implantation on the suppression of 1SSF expansion, as shown in Figures 1 and 4. 3, 4. Therefore, we believe that Et PD est anchored ab Hydrogenium atomis cum density sub deprehendatur terminus de sims (II × MXVI cm III), seu punctum defectus inducit implantationem.Notandum quod nos non confirmavit augmentum in on-re publica resistentia ex elongatione 1SSF postquam surge current onus.Hoc potest esse ex imperfecta ohmic contactus facta usura nostrum processus, quod erit eliminated in proximo futurum.
In fine, methodum extinctionem elaboravimus ad extendendam BPD ad 1SSF in 4H-SiC PiN diodes utentes protón implantationem ante fabricam fabricandi.Depravatio notae I-V in implantatione protonis parva est, praesertim in protono dosi 1012 cm-2, sed effectus 1SSF expansionis suppressionis notabilis est.Etsi in hoc studio 10 µm crassum PiN diodes cum protonia implantatione ad altitudinem 10 µm fabricavimus, potest tamen adhuc condiciones implantationis optimizare et eas ad alias rationes 4H-SiC machinis fabricare.Adiectis sumptibus fabricae fabricationis in protón implantatione considerari debent, sed similes erunt illis implantationis aluminium ion, quod est principale processus fabricandi pro 4H-SiC potentiae machinis.Ut, Proton implantatio prior ad fabrica processus est potentiale modum pro fabrici 4h-sic bipolar potentia cogitationes absque degeneratione.
Per Proton implantatio, in larva in laminam usus est, et laminam habuit sectiones sine et cum protón dose of MXII, MXIV, seu MXVI cm-II.Then, Al ions with proton doses of 1020 and 1017 cm–3 were implanted over the entire wafer to a depth of 0–0.2 µm and 0.2–0.5 µm from the surface, followed by annealing at 1600°C to form a carbon cap to forma ap iacuit.-Type.Postmodum, lateris posterioris NI contactus in latere subiecto posita erat, dum 2.0 mm × 2.0 mm Ti/al-vum figuratum lateris anterioris contactum a photolithographia formatum et processum cortices in latere epitaxiali positum est.Denique contactus annealing est peragitur ad temperatus de DCC ° c.Post cutting in laganum in eu, non feci accentus characterization et application.
Et ego V characteres de fabricato ACUS Diodes sunt observata usura an HP4155B Semiconductor parametri Analyser.Sicut in electrica accentus, a X-millisecond pulsed current de 212.5 a / cm2 est introducta pro II horas ad frequency of X pulsus / sec.Cum enim elegit in inferioribus current density et frequency, non observe 1SSF expansion etiam in pin diode sine protón iniectio.Per applicari electrica voltage, temperatus de pin diode est circa LXX ° C sine intentionalibus calefacit, ut ostensum est in figura S8.Electreoescentcent imagines sunt adeptus ante et post electrica accentus ad current densitate de XXV a / cm2.Synchrotron reflection grazing incidence X-ray topography using a monochromatic X-ray beam (λ = 0.15 nm) at the Aichi Synchrotron Radiation Center, the ag vector in BL8S2 is -1-128 or 11-28 (see ref. 44 for details) .).
In voltage frequency ad deinceps current densitate 2.5 a / cm2 extrahitur cum intervallo 0.5 V in Fig.II Secundum CVC cuiusque statu pin diode.Ex medio valore accentus Vave et vexillum declinationis σ accentus, machinamur curvam distributionem normalem in forma lineae punctatae in Figura 2 utendo sequentem aequationem;
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Post tempus: Nov-06-2022