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I-4H-SiC ithengiswe njengento yokusetshenziswa kwamadivayisi e-semiconductor yamandla. Kodwa-ke, ukuthembeka kwesikhathi eside kwamadivayisi e-4H-SiC kuyisithiyo ekusetshenzisweni kwawo okubanzi, futhi inkinga yokuthembeka ebaluleke kakhulu yamadivayisi e-4H-SiC ukuwohloka kwe-bipolar. Lokhu kuwohloka kubangelwa ukusabalala okukodwa kwe-Shockley stacking fault (1SSF) kokuhlukaniswa kwe-basal plane kumakristalu e-4H-SiC. Lapha, siphakamisa indlela yokucindezela ukwanda kwe-1SSF ngokufaka ama-proton kuma-wafer e-4H-SiC epitaxial. Ama-diode e-PiN enziwe kuma-wafer ane-proton implantation abonise izici ezifanayo zamandla kagesi njenge-diodes ngaphandle kokufakelwa kwe-proton. Ngokuphambene nalokho, ukwanda kwe-1SSF kucindezelwa ngempumelelo kwi-diode ye-PiN efakwe yi-proton. Ngakho-ke, ukufakwa kwama-proton kuma-wafer e-4H-SiC epitaxial kuyindlela ephumelelayo yokucindezela ukonakala kwe-bipolar kwamadivayisi e-4H-SiC power semiconductor ngenkathi kugcinwa ukusebenza kwedivayisi. Lo mphumela unegalelo ekuthuthukisweni kwamadivayisi e-4H-SiC athembeke kakhulu.
I-Silicon carbide (i-SiC) yaziwa kabanzi njengezinto ze-semiconductor zamadivayisi e-semiconductor anamandla aphezulu, avame ukusebenza ezindaweni ezinzima1. Kunezinhlobo eziningi ze-SiC polytypes, phakathi kwazo i-4H-SiC inezakhiwo zomzimba ezinhle kakhulu zedivayisi ye-semiconductor njengokuhamba kwama-electron aphezulu kanye nensimu kagesi ephukile kakhulu2. Ama-wafer e-4H-SiC anobubanzi obungamasentimitha ayi-6 okwamanje ayathengiswa futhi asetshenziselwa ukukhiqizwa ngobuningi kwamadivayisi e-semiconductor anamandla3. Izinhlelo zokudonsa izimoto zikagesi nezitimela zenziwe kusetshenziswa amadivayisi e-semiconductor anamandla e-4H-SiC4.5. Kodwa-ke, amadivayisi e-4H-SiC asabhekene nezinkinga zokuthembeka zesikhathi eside njengokuphuka kwe-dielectric noma ukuthembeka kwe-short-circuit,6,7 okungenye yezinkinga zokuthembeka ezibaluleke kakhulu ukubola kwe-bipolar2,8,9,10,11. Lokhu konakala kwe-bipolar kwatholakala eminyakeni engaphezu kwengu-20 eyedlule futhi sekuyisikhathi eside kuyinkinga ekwakhiweni kwamadivayisi e-SiC.
Ukuwohloka kwe-Bipolar kubangelwa yi-single Shockley stack defect (1SSF) kumakristalu e-4H-SiC ane-basal plane dislocations (BPDs) esakazeka nge-recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Ngakho-ke, uma ukwanda kwe-BPD kucindezelwa ku-1SSF, amadivayisi kagesi e-4H-SiC angenziwa ngaphandle kokuwohloka kwe-bipolar. Kubikwe izindlela eziningana zokucindezela ukuwohloka kwe-BPD, njenge-BPD kuya ku-Thread Edge Dislocation (TED) transformation 20,21,22,23,24. Kuma-wafers epitaxial epitaxial akamuva e-SiC, i-BPD ikhona kakhulu ku-substrate hhayi ku-epitaxial layer ngenxa yokuguqulwa kwe-BPD ibe yi-TED ngesikhathi sokuqala kokukhula kwe-epitaxial. Ngakho-ke, inkinga esele yokuwohloka kwe-bipolar ukusatshalaliswa kwe-BPD ku-substrate 25,26,27. Ukufakwa "kwesendlalelo sokuqinisa esihlanganisiwe" phakathi kwesendlalelo sokukhukhuleka kanye nesendlalelo kuye kwaphakanyiswa njengendlela ephumelelayo yokucindezela ukwanda kwe-BPD ku-substrate28, 29, 30, 31. Lolu sendlalelo lwandisa amathuba okuphinda kuhlanganiswe kwe-electron-hole pair ku-epitaxial layer kanye ne-SiC substrate. Ukunciphisa inani le-electron-hole pair kunciphisa amandla okushayela e-REDG ku-BPD ku-substrate, ngakho-ke isendlalelo sokuqinisa esihlanganisiwe singacindezela ukuwohloka kwe-bipolar. Kufanele kuqashelwe ukuthi ukufakwa kwesendlalelo kuhilela izindleko ezengeziwe ekukhiqizweni kwama-wafer, futhi ngaphandle kokufakwa kwesendlalelo kunzima ukunciphisa inani le-electron-hole pair ngokulawula kuphela ukulawulwa kwesikhathi sokuthwala. Ngakho-ke, kusenesidingo esikhulu sokuthuthukisa ezinye izindlela zokucindezela ukuze kufezwe ibhalansi engcono phakathi kwezindleko zokukhiqiza amadivayisi kanye nesivuno.
Ngenxa yokuthi ukwandiswa kwe-BPD kuya ku-1SSF kudinga ukunyakaza kokuhlukaniswa okungaphelele (ama-PD), ukufaka i-PD kuyindlela ethembisayo yokuvimbela ukuwohloka kwe-bipolar. Nakuba kuye kwabikwa ukuthi ukufakwa kwe-PD ngokungcola kwensimbi, ama-FPD kuma-substrate angu-4H-SiC atholakala ebangeni elingaphezu kwama-5 μm ukusuka ebusweni besendlalelo se-epitaxial. Ngaphezu kwalokho, njengoba i-coefficient yokusabalalisa yanoma iyiphi insimbi ku-SiC incane kakhulu, kunzima ukuthi ukungcola kwensimbi kusakazeke ku-substrate34. Ngenxa yesisindo esikhulu se-athomu sezinsimbi, ukufakwa kwama-ion kwezinsimbi nakho kunzima. Ngokuphambene nalokho, esimweni se-hydrogen, into elula kakhulu, ama-ion (ama-proton) angafakwa ku-4H-SiC aze ajule ngaphezu kwama-10 µm kusetshenziswa i-accelerator ye-MeV-class. Ngakho-ke, uma ukufakwa kwe-proton kuthinta ukufakwa kwe-PD, khona-ke kungasetshenziswa ukucindezela ukusabalala kwe-BPD ku-substrate. Kodwa-ke, ukufakwa kwe-proton kungalimaza i-4H-SiC futhi kuholele ekusebenzeni okuncishisiwe kwedivayisi37,38,39,40.
Ukuze kunqotshwe ukuwohloka kwedivayisi ngenxa yokufakelwa kweproton, i-annealing yokushisa okuphezulu isetshenziswa ukulungisa umonakalo, efana nendlela ye-annealing evame ukusetshenziswa ngemva kokufakelwa kwe-ion yokwamukela ekucutshungulweni kwedivayisi1, 40, 41, 42. Nakuba i-secondary ion mass spectrometry (SIMS)43 ibike ukusabalala kwe-hydrogen ngenxa yokufakelwa kwe-high-temperature, kungenzeka ukuthi ubuningi bama-athomu e-hydrogen eduze kwe-FD kuphela akwanele ukuthola ukuphina kwe-PR kusetshenziswa i-SIMS. Ngakho-ke, kulolu cwaningo, sifake ama-proton kuma-wafer epitaxial epitaxial e-4H-SiC ngaphambi kwenqubo yokwenziwa kwedivayisi, kufaka phakathi i-annealing yokushisa okuphezulu. Sisebenzise ama-diode e-PiN njengezakhiwo zedivayisi yokuhlola futhi sawakha kuma-wafer epitaxial epitaxial e-4H-SiC afakwe iproton. Sabe sesibona izici ze-volt-ampere ukuze sifunde ukuwohloka kokusebenza kwedivayisi ngenxa yokufakwa kweproton. Ngemva kwalokho, sabona ukwanda kwe-1SSF ezithombeni ze-electroluminescence (EL) ngemva kokusebenzisa i-voltage kagesi ku-diode ye-PiN. Ekugcineni, siqinisekisile umphumela womjovo we-proton ekucindezelweni kokwandiswa kwe-1SSF.
Ku-Fig. Isithombe 1 sibonisa izici zamanje-zamandla kagesi (ama-CVC) zama-PiN diode ekushiseni kwegumbi ezindaweni ezine-proton implantation nangaphandle kwayo ngaphambi komshini ovunguzayo. Ama-PiN diode ane-proton injection abonisa izici zokulungisa ezifana nama-diode angenayo i-proton injection, yize izici ze-IV zabelwana ngazo phakathi kwama-diode. Ukuze sibonise umehluko phakathi kwezimo zokujova, sidwebe imvamisa ye-voltage ku-forward current density engu-2.5 A/cm2 (ehambelana no-100 mA) njengesithombe sezibalo njengoba kuboniswe ku-Figure 2. I-curve elinganiswe ngokusatshalaliswa okujwayelekile nayo imelelwe umugqa onamachashazi. Njengoba kungabonakala eziqongweni zama-curve, ukumelana kokuma kuyanda kancane kumthamo we-proton ongu-1014 no-1016 cm-2, kuyilapho i-PiN diode ene-proton dose engu-1012 cm-2 ikhombisa izici ezifanayo nalezo ezingenayo i-proton implantation. Siphinde senza ukufakwa kweproton ngemuva kokwenziwa kwama-diode e-PiN angabonisanga ukukhanya okufanayo ngenxa yomonakalo obangelwe ukufakwa kweproton njengoba kuboniswe kuMfanekiso S1 njengoba kuchaziwe ezifundweni zangaphambilini37,38,39. Ngakho-ke, ukunamathisela ku-1600 °C ngemuva kokufakwa kwama-ion e-Al kuyinqubo edingekayo yokwakha amadivayisi okusebenzisa i-Al acceptor, engalungisa umonakalo obangelwe ukufakwa kweproton, okwenza ama-CVC afane phakathi kwama-diode e-proton PiN afakiwe kanye nalawo angafakiwe. Imvamisa yamanje ebuyela emuva ku--5 V nayo ivezwe kuMfanekiso S2, akukho mehluko omkhulu phakathi kwama-diode anomjovo weproton nangaphandle kwawo.
Izici ze-volt-ampere zama-diode e-PiN anama-proton ajoviwe nangenawo ekushiseni kwegumbi. Inganekwane ikhombisa umthamo wama-proton.
Imvamisa ye-voltage ku-direct current engu-2.5 A/cm2 yama-diode e-PiN anama-proton ajoviwe nalawo angajoviwe. Umugqa onamachashazi uhambisana nokusatshalaliswa okuvamile.
Ku-Fig. 3 kukhombisa isithombe se-EL se-PiN diode enobuningi bamanje obungu-25 A/cm2 ngemva kwe-voltage. Ngaphambi kokusebenzisa umthwalo wamanje oshukunyisiwe, izindawo ezimnyama ze-diode azibonwanga, njengoba kuboniswe ku-Figure 3. C2. Kodwa-ke, njengoba kuboniswe ku-Fig. 3a, ku-PiN diode ngaphandle kokufakelwa kwe-proton, izindawo eziningana ezimnyama ezinemigqa ekhanyayo zabonwa ngemuva kokusebenzisa i-voltage kagesi. Izindawo ezinjalo ezimnyama ezimise okwenduku zibonwa ezithombeni ze-EL ze-1SSF ezisuka ku-BPD ku-substrate28,29. Esikhundleni salokho, amanye amaphutha okuhlanganisa anwetshiwe abonwa kuma-PiN diode anama-proton afakwe, njengoba kuboniswe ku-Fig. 3b–d. Sisebenzisa i-X-ray topography, siqinisekisile ukuba khona kwama-PR angasuka ku-BPD aye ku-substrate emngceleni woxhumana nabo ku-PiN diode ngaphandle kokujova kwe-proton (Isithombe 4: lesi sithombe ngaphandle kokususa i-electrode ephezulu (ethathwe izithombe, i-PR ngaphansi kwama-electrode ayibonakali). Ngakho-ke, indawo emnyama esithombeni se-EL ihambelana ne-1SSF BPD enwetshiwe ku-substrate. Izithombe ze-EL zamanye ama-PiN diode alayishiwe ziboniswe kuZithombe 1 no-2. Amavidiyo e-S3-S6 anezindawo ezimnyama ezinwetshiwe nezingenazo (izithombe ze-EL ezishintsha isikhathi zama-PiN diode ngaphandle kokujova kwe-proton futhi ezifakwe ku-1014 cm-2) nazo ziboniswe ku-Supplementary Information.
Izithombe ze-EL zama-diode e-PiN ku-25 A/cm2 ngemva kwamahora ama-2 okucindezeleka kukagesi (a) ngaphandle kokufakelwa kwe-proton kanye nama-dose afakiwe angu-(b) 1012 cm-2, (c) 1014 cm-2 kanye (d) 1016 cm-2 proton.
Sibale ubuningi be-1SSF enwetshiwe ngokubala izindawo ezimnyama ezinemiphetho ekhanyayo kuma-diode amathathu e-PiN ngesimo ngasinye, njengoba kuboniswe kuMfanekiso 5. Ubuningi be-1SSF enwetshiwe buyancipha ngokwandisa umthamo we-proton, futhi ngisho nangomthamo ongu-1012 cm-2, ubuningi be-1SSF enwetshiwe buphansi kakhulu kunase-diode ye-PiN engafakwanga.
Ukwanda kobuningi bama-diode e-SF PiN ane-proton implantation nangaphandle kwayo ngemva kokulayisha nge-pulsed current (isimo ngasinye sasihlanganisa ama-diode amathathu alayishiwe).
Ukufinyeza isikhathi sokuphila somthwali nakho kuthinta ukucindezelwa kokunwebeka, kanti ukujova kweprotoni kunciphisa isikhathi sokuphila somthwali32,36. Sibonile isikhathi sokuphila somthwali kungqimba ye-epitaxial engu-60 µm ubukhulu ngama-proton ajoviwe angu-1014 cm-2. Kusukela esikhathini sokuphila somthwali sokuqala, yize i-implant yehlisa inani libe ngu-~10%, i-annealing elandelayo iyibuyisela ku-~50%, njengoba kuboniswe ku-Fig. S7. Ngakho-ke, isikhathi sokuphila somthwali, esincishisiwe ngenxa yokufakelwa kweproton, sibuyiselwa ngokujova okushisa okuphezulu. Nakuba ukwehla okungu-50% empilweni yomthwali nakho kuvimbela ukusabalala kwamaphutha okuhlanganisa, izici ze-I–V, ezivame ukuxhomeke empilweni yomthwali, zibonisa umehluko omncane kuphela phakathi kwama-diode ajoviwe nalawo angafakwanga. Ngakho-ke, sikholelwa ukuthi ukunamathisela kwe-PD kudlala indima ekuvimbeleni ukwanda kwe-1SSF.
Nakuba i-SIMS ingazange ithole i-hydrogen ngemva kokufakwa ku-1600°C, njengoba kubikiwe ezifundweni zangaphambilini, sibone umphumela wokufakelwa kwe-proton ekucindezelweni kokwandiswa kwe-1SSF, njengoba kuboniswe kuZithombe 1 no-4. 3, 4. Ngakho-ke, sikholelwa ukuthi i-PD inamathele ngama-athomu e-hydrogen anobuningi obungaphansi komkhawulo wokutholwa we-SIMS (2 × 1016 cm-3) noma amaphutha ephuzu abangelwa ukufakwa. Kufanele kuqashelwe ukuthi asikaqinisekisi ukwanda kokumelana nesimo ngenxa yokwandiswa kwe-1SSF ngemva komthwalo wamanje okhuphukayo. Lokhu kungase kube ngenxa yokuxhumana okungaphelele kwe-ohmic okwenziwe kusetshenziswa inqubo yethu, ezoqedwa maduze.
Ekuphetheni, sithuthukise indlela yokucima yokwandisa i-BPD ibe yi-1SSF kuma-diode e-4H-SiC PiN sisebenzisa ukufakwa kweproton ngaphambi kokwenziwa kwedivayisi. Ukuwohloka kwesici se-I-V ngesikhathi sokufakwa kweproton akubalulekile, ikakhulukazi kumthamo weproton ongu-1012 cm-2, kodwa umphumela wokucindezela ukwanda kwe-1SSF ubalulekile. Nakuba kulolu cwaningo sakha ama-diode e-PiN angu-10 µm obukhulu ngokufakwa kweproton kuze kube yi-10 µm, kusengenzeka ukwenza ngcono izimo zokufakwa futhi sizisebenzise ekwakheni ezinye izinhlobo zamadivayisi e-4H-SiC. Izindleko ezengeziwe zokwenziwa kwedivayisi ngesikhathi sokufakwa kweproton kufanele zicatshangelwe, kodwa zizofana nalezo zokufakelwa kwe-aluminium ion, okuyinqubo eyinhloko yokwenziwa kwamadivayisi kagesi e-4H-SiC. Ngakho-ke, ukufakwa kweproton ngaphambi kokucubungula idivayisi kuyindlela engaba khona yokwakha amadivayisi kagesi e-bipolar e-4H-SiC ngaphandle kokonakala.
I-wafer engu-4-intshi n-type 4H-SiC enobukhulu bengqimba ye-epitaxial engu-10 µm kanye ne-doping concentration ye-donor engu-1 × 1016 cm–3 yasetshenziswa njengesampula. Ngaphambi kokucubungula idivayisi, ama-ion e-H+ afakwa epuletini ngamandla okusheshisa angu-0.95 MeV ekushiseni kwegumbi kuya ekujuleni okungaba ngu-10 μm nge-engeli evamile ebusweni bepuleti. Ngesikhathi sokufakelwa kwe-proton, kwasetshenziswa imaski epuletini, kanti ipuleti yayinezingxenye ezingenayo futhi inomthamo we-proton ongu-1012, 1014, noma 1016 cm-2. Ngemuva kwalokho, ama-ion e-Al anezilinganiso ze-proton ezingu-1020 kanye no-1017 cm–3 afakwa phezu kwe-wafer yonke kuya ekujuleni okungu-0–0.2 µm kanye no-0.2–0.5 µm ukusuka ebusweni, kulandelwe ukuncibilikisa ku-1600°C ukwakha isivalo sekhabhoni ukwakha ungqimba lwe-ap. -type. Ngemva kwalokho, ukuxhumana kwe-Ni ohlangothini lwangemuva kwafakwa ohlangothini lwe-substrate, kuyilapho ukuxhumana okungaphambili kwe-Ti/Al okufana nekamu okungu-2.0 mm × 2.0 mm okwakhiwa yi-photolithography kanye nenqubo yokususa kwafakwa ohlangothini lwesendlalelo se-epitaxial. Ekugcineni, ukufakelwa kokuxhumana kwenziwa ekushiseni okungu-700 °C. Ngemva kokusika i-wafer ibe ama-chips, senza ukuhlukaniswa kokucindezeleka kanye nokusetshenziswa.
Izici ze-I–V zama-PiN diode enziwe zabonwa kusetshenziswa i-HP4155B semiconductor parameter analyzer. Njengokucindezeleka kukagesi, i-pulsed current engu-10-millisecond engu-212.5 A/cm2 yethulwa amahora ama-2 ngemvamisa yama-pulses ayi-10/sec. Lapho sikhetha i-current density noma i-frequency ephansi, asibonanga ukwanda kwe-1SSF ngisho naku-PiN diode ngaphandle komjovo we-proton. Ngesikhathi se-voltage kagesi esetshenzisiwe, izinga lokushisa le-PiN diode licishe libe ngu-70°C ngaphandle kokushisa ngamabomu, njengoba kuboniswe ku-Figure S8. Izithombe ze-electroluminescent zatholakala ngaphambi nangemva kwe-electric stress ku-current density engu-25 A/cm2. I-Synchrotron reflection grazing incidence X-ray topography kusetshenziswa i-monochromatic X-ray beam (λ = 0.15 nm) e-Aichi Synchrotron Radiation Center, i-ag vector ku-BL8S2 ingu--1-128 noma 11-28 (bheka ireferensi 44 ukuthola imininingwane).).
Imvamisa ye-voltage ku-forward current density engu-2.5 A/cm2 ikhishwa ngesikhawu esingu-0.5 V ku-fig. 2 ngokusho kwe-CVC yesimo ngasinye se-PiN diode. Kusukela ku-mean value ye-stress Vave kanye nokuphambuka okujwayelekile okungu-σ kokucindezeleka, sidweba i-normal distribution curve ngesimo somugqa onamachashazi ku-Figure 2 sisebenzisa i-equation elandelayo:
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Isikhathi sokuthunyelwe: Novemba-06-2022
