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I-4H-SiC iye yathengiswa njengesixhobo sezixhobo ze-semiconductor zamandla. Nangona kunjalo, ukuthembeka kwexesha elide kwezixhobo ze-4H-SiC ngumqobo ekusetyenzisweni kwazo ngokubanzi, kwaye ingxaki yokuthembeka ebaluleke kakhulu yezixhobo ze-4H-SiC kukubola kwe-bipolar. Oku konakala kubangelwa kukwanda kwe-Shockley stacking fault (1SSF) yokwahlukana kwe-basal plane kwiikristale ze-4H-SiC. Apha, sicebisa indlela yokunciphisa ukwanda kwe-1SSF ngokufaka iiproton kwii-wafers ze-4H-SiC epitaxial. Ii-diode ze-PiN ezenziwe kwii-wafers ezine-proton implantation zibonise iimpawu ezifanayo zamandla ombane njengee-diode ngaphandle kokufakelwa kweproton. Ngokwahlukileyo koko, ukwanda kwe-1SSF kuncitshiswa ngempumelelo kwi-diode ye-PiN efakwe kwiproton. Ke ngoko, ukufakwa kweeproton kwii-wafers ze-4H-SiC epitaxial yindlela esebenzayo yokunciphisa ukubola kwe-bipolar kwezixhobo ze-4H-SiC zamandla ombane ngelixa kugcinwa ukusebenza kwesixhobo. Esi siphumo sinegalelo kuphuhliso lwezixhobo ze-4H-SiC ezithembekileyo kakhulu.
I-Silicon carbide (i-SiC) yaziwa kakhulu njengesixhobo se-semiconductor sezixhobo ze-semiconductor ezinamandla aphezulu, ezinokusebenza kwiindawo ezinzima1. Kukho iintlobo ezininzi ze-SiC polytypes, apho i-4H-SiC ineempawu ezibonakalayo zesixhobo se-semiconductor ezifana nokuhamba kwe-electron ephezulu kunye nentsimi yombane eqhekekileyo ngamandla2. Ii-wafers ze-4H-SiC ezinobubanzi obuzii-intshi ezi-6 okwangoku ziyathengiswa kwaye zisetyenziselwa ukuvelisa ngobuninzi izixhobo ze-semiconductor zamandla3. Iinkqubo zokudonsa izithuthi zombane kunye noololiwe zenziwe kusetyenziswa izixhobo ze-semiconductor zamandla ze-4H-SiC4.5. Nangona kunjalo, izixhobo ze-4H-SiC zisajongene nemiba yokuthembeka kwexesha elide efana nokuphazamiseka kwe-dielectric okanye ukuthembeka kwe-short-circuit,6,7 enye yezona ngxaki zibalulekileyo zokuthembeka yi-bipolar degradation2,8,9,10,11. Oku kuchithwa kwe-bipolar kwafunyanwa kwiminyaka engaphezu kwama-20 eyadlulayo kwaye kudala kwaba yingxaki ekwenziweni kwezixhobo ze-SiC.
Ukubola kwe-Bipolar kubangelwa yi-single Shockley stack defect (1SSF) kwiikristale ze-4H-SiC ezine-basal plane dislocations (BPDs) ezisasazeka nge-recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Ke ngoko, ukuba ukwandiswa kwe-BPD kucinezelwe kwi-1SSF, izixhobo zamandla ze-4H-SiC zinokwenziwa ngaphandle kokubola kwe-bipolar. Iindlela ezininzi ziye zaxelwa ukuba zicinezele ukubola kwe-BPD, njenge-BPD ukuya kwi-Thread Edge Dislocation (TED) transformation 20,21,22,23,24. Kwii-wafers zamva nje ze-SiC epitaxial, i-BPD ikhona kakhulu kwi-substrate hayi kwi-epitaxial layer ngenxa yokuguqulwa kwe-BPD ukuya kwi-TED ngexesha lokuqala lokukhula kwe-epitaxial. Ke ngoko, ingxaki eseleyo yokubola kwe-bipolar kukusasazwa kwe-BPD kwi-substrate 25,26,27. Ukufakwa "komaleko wokuqinisa odityanisiweyo" phakathi komaleko wokuntywila kunye ne-substrate kucetyisiwe njengendlela esebenzayo yokuthintela ukwanda kwe-BPD kwi-substrate28, 29, 30, 31. Olu maleko lonyusa amathuba okuphinda kuhlanganiswe i-electron-hole pair kwi-epitaxial layer kunye ne-SiC substrate. Ukunciphisa inani lee-electron-hole pairs kunciphisa amandla okuqhuba e-REDG ukuya kwi-BPD kwi-substrate, ngoko ke umaleko wokuqinisa odityanisiweyo unokuthintela ukuwohloka kwe-bipolar. Kufuneka kuqatshelwe ukuba ukufakwa komaleko kubandakanya iindleko ezongezelelweyo kwimveliso yee-wafers, kwaye ngaphandle kokufakwa komaleko kunzima ukunciphisa inani lee-electron-hole pairs ngokulawula kuphela ulawulo lobomi bomthwali. Ke ngoko, kusekho isidingo esinamandla sokuphuhlisa ezinye iindlela zokunciphisa ukufezekisa ibhalansi engcono phakathi kweendleko zokwenziwa kwezixhobo kunye nemveliso.
Ngenxa yokuba ukwandiswa kwe-BPD ukuya kwi-1SSF kufuna ukushukuma kwe-partial dislocations (PDs), ukupina i-PD yindlela ethembisayo yokuthintela ukubola kwe-bipolar. Nangona ukupina kwe-PD ngokungcola kwesinyithi kuye kwaxelwa, ii-FPD kwi-4H-SiC substrates zifumaneka kumgama ongaphezulu kwe-5 μm ukusuka kumphezulu womaleko we-epitaxial. Ukongeza, ekubeni i-diffusion coefficient yayo nayiphi na isinyithi kwi-SiC incinci kakhulu, kunzima ukuba ukungcola kwesinyithi kungene kwi-substrate34. Ngenxa yobunzima obukhulu be-atomic beesinyithi, ukufakwa kwee-ion zeesinyithi nako kunzima. Ngokwahlukileyo koko, kwimeko ye-hydrogen, eyona nto ilula, ii-ion (ii-proton) zinokufakwa kwi-4H-SiC ukuya kubunzulu obungaphezulu kwe-10 µm kusetyenziswa i-MeV-class accelerator. Ke ngoko, ukuba ukufakwa kwe-proton kuchaphazela ukupina kwe-PD, ngoko ingasetyenziselwa ukucinezela ukusasazeka kwe-BPD kwi-substrate. Nangona kunjalo, ukufakwa kwe-proton kunokonakalisa i-4H-SiC kwaye kubangele ukusebenza okunciphileyo kwesixhobo37,38,39,40.
Ukoyisa ukonakala kwesixhobo ngenxa yokufakelwa kweproton, i-annealing yobushushu obuphezulu isetyenziselwa ukulungisa umonakalo, ngendlela efanayo nendlela ye-annealing esetyenziswa rhoqo emva kokufakelwa kwe-ion ye-acceptor ekucutshungulweni kwesixhobo1, 40, 41, 42. Nangona i-secondary ion mass spectrometry (SIMS)43 ibike ukusasazeka kwe-hydrogen ngenxa yokufakelwa kwe-high-temperature, kunokwenzeka ukuba kuphela uxinano lwee-athomu ze-hydrogen ezikufutshane ne-FD alwanelanga ukubona ukugoba kwe-PR kusetyenziswa i-SIMS. Ke ngoko, kolu phononongo, sifake ii-proton kwii-wafers ze-4H-SiC epitaxial ngaphambi kwenkqubo yokwenziwa kwesixhobo, kubandakanya i-annealing yobushushu obuphezulu. Sisebenzise ii-PiN diodes njengezakhiwo zesixhobo sovavanyo kwaye sazenza kwii-wafers ze-4H-SiC epitaxial ezifakwe kwiproton. Emva koko sabona iimpawu ze-volt-ampere ukuze sifunde ukonakala kokusebenza kwesixhobo ngenxa yokufakwa kweproton. Emva koko, sabona ukwanda kwe-1SSF kwimifanekiso ye-electroluminescence (EL) emva kokusebenzisa i-voltage yombane kwi-PiN diode. Ekugqibeleni, siqinisekisile isiphumo sokufakwa kweproton ekuthintelweni kokwandiswa kwe-1SSF.
Kumfanekiso 1. Umfanekiso 1 ubonisa iimpawu zamandla angoku-voltage (ii-CVC) zee-PiN diodes kubushushu begumbi kwiindawo ezine-proton implantation kunye nezingenayo ngaphambi kokuba kubekho i-pulsed current. Ii-PiN diodes ezine-proton injection zibonisa iimpawu zokulungisa ezifana nee-diodes ezingenayo i-proton injection, nangona iimpawu ze-IV zabelwana ngazo phakathi kwee-diodes. Ukubonisa umahluko phakathi kweemeko ze-injection, sidwebe i-voltage frequency kwi-forward current density ye-2.5 A/cm2 (ehambelana ne-100 mA) njenge-statistical plot njengoko kubonisiwe kuMfanekiso 2. I-curve eqikelelwa kukusasazwa okuqhelekileyo ikwamelwa ngumgca womgca onamachaphaza. Njengoko kunokubonwa kwiincopho zee-curves, i-on-resistance iyanda kancinci kwiidosi ze-proton ze-1014 kunye ne-1016 cm-2, ngelixa i-PiN diode ene-proton dose ye-1012 cm-2 ibonisa phantse iimpawu ezifanayo nezo zingenayo i-proton implantation. Sikwaqhube nokufakelwa kweproton emva kokwenziwa kwee-PiN diodes ezingakhange zibonise i-electroluminescence efanayo ngenxa yomonakalo obangelwe kukufakelwa kweproton njengoko kubonisiwe kuMfanekiso S1 njengoko kuchaziwe kwizifundo zangaphambili37,38,39. Ke ngoko, ukutsalwa kwi-1600 °C emva kokufakelwa kwee-Al ions yinkqubo efunekayo yokwenza izixhobo zokuvula i-Al acceptor, enokulungisa umonakalo obangelwe kukufakelwa kweproton, okwenza ii-CVC zifane phakathi kwee-proton PiN diodes ezifakelweyo nezingezizo ezifakelweyo. I-frequency yangoku ebuyela umva kwi--5 V ikwaboniswe kuMfanekiso S2, akukho mahluko ubalulekileyo phakathi kwee-diodes ezine-proton injection kunye nezingenayo.
Iimpawu ze-Volt-ampere zee-diode ze-PiN ezinee-proton ezifakwe kwiqondo lobushushu begumbi kunye nezingenazo. Le ntsomi ibonisa idosi yee-proton.
I-voltage frequency kwi-direct current eyi-2.5 A/cm2 kwii-PiN diodes ezinee-proton ezijoyiweyo nezingejoyiweyo. Umgca onamachaphaza uhambelana nokusasazwa okuqhelekileyo.
Kumfanekiso 3 ubonisa umfanekiso we-EL we-PiN diode enobunzima bangoku obuyi-25 A/cm2 emva kwe-voltage. Ngaphambi kokusebenzisa umthwalo wangoku oshukumayo, iindawo ezimnyama ze-diode azibonwanga, njengoko kubonisiwe kuMfanekiso 3. C2. Nangona kunjalo, njengoko kubonisiwe kumfanekiso 3a, kwi-PiN diode ngaphandle kokufakelwa kwe-proton, iindawo ezininzi ezimnyama ezinemigca ekhanyayo zabonwa emva kokusebenzisa i-voltage yombane. Ezi ndawo zimnyama ezimile njengentonga zibonwa kwimifanekiso ye-EL ye-1SSF ephuma kwi-BPD kwi-substrate28,29. Endaweni yoko, ezinye iimpazamo zokubeka ezinde zabonwa kwii-PiN diodes ezinee-proton ezifakelweyo, njengoko kubonisiwe kuMfanekiso 3b–d. Sisebenzisa i-X-ray topography, siqinisekisile ukubakho kwee-PRs ezinokusuka kwi-BPD ziye kwi-substrate kumda wee-contacts kwi-PiN diode ngaphandle kwe-proton injection (Umzobo 4: lo mfanekiso ngaphandle kokususa i-electrode ephezulu (ifotwe, i-PR phantsi kwee-electrodes ayibonakali). Ke ngoko, indawo emnyama kumfanekiso we-EL ihambelana ne-1SSF BPD eyandisiweyo kwi-substrate. Imifanekiso ye-EL yezinye ii-PiN diodes ezilayishiweyo iboniswe kwiMifanekiso 1 kunye no-2. Iividiyo ze-S3-S6 ezineendawo ezimnyama ezinde nezingenazo (imifanekiso ye-EL etshintsha ixesha yee-PiN diodes ngaphandle kwe-proton injection kwaye ifakwe kwi-1014 cm-2) nazo ziboniswe kwi-Supplementary Information.
Imifanekiso ye-EL yee-PiN diodes kwi-25 A/cm2 emva kweeyure ezi-2 zoxinzelelo lombane (a) ngaphandle kokufakelwa kweproton kunye needosi ezifakwe kwi-(b) 1012 cm-2, (c) 1014 cm-2 kunye (d) 1016 cm-2 protons.
Sibale uxinano lwe-1SSF eyongeziweyo ngokubala iindawo ezimnyama ezinemiphetho ekhanyayo kwii-diode ezintathu zePiN kwimeko nganye, njengoko kubonisiwe kuMfanekiso 5. Uxinano lwe-1SSF eyongeziweyo luyehla ngokwandisa idosi yeproton, kwaye nokuba idosi ye-1012 cm-2, uxinano lwe-1SSF eyongeziweyo luphantsi kakhulu kunakwi-diode yePiN engafakwanga.
Ukwanda koxinano lwee-diode ze-SF PiN ezine-proton implantation kunye nezingenayo emva kokulayisha nge-pulsed current (imeko nganye yayiquka ii-diode ezintathu ezilayishiweyo).
Ukufinyeza ubomi bomthwali kukwachaphazela ukuncitshiswa kokwandiswa, kwaye ukujova kweproton kunciphisa ubomi bomthwali32,36. Sibone ubomi bomthwali kumaleko we-epitaxial 60 µm ubukhulu kunye neeproton ezijoviweyo ze-1014 cm-2. Ukususela kwixesha lokuqala lokuthwala, nangona i-implant inciphisa ixabiso ukuya kwi-~10%, i-annealing elandelayo iyibuyisela kwi-~50%, njengoko kubonisiwe kwiFig. S7. Ke ngoko, ixesha lokuthwala, elincitshisiweyo ngenxa yokufakelwa kweproton, libuyiselwa ngokujova kobushushu obuphezulu. Nangona ukunciphisa kwe-50% kubomi bomthwali kukwathintela ukwanda kweempazamo zokubeka, iimpawu ze-I–V, ezihlala zixhomekeke kubomi bomthwali, zibonisa umahluko omncinci kuphela phakathi kwee-diode ezijoviweyo nezingezizo ezijoviweyo. Ke ngoko, sikholelwa ukuba i-PD anchoring idlala indima ekuthinteleni ukwanda kwe-1SSF.
Nangona i-SIMS ingazange iyifumane i-hydrogen emva kokufakwa kwi-1600°C, njengoko kubikwe kwizifundo zangaphambili, sibone isiphumo sokufakelwa kweproton ekuthintelweni kokwandiswa kwe-1SSF, njengoko kubonisiwe kwiMifanekiso 1 kunye no-4. 3, 4. Ke ngoko, sikholelwa ukuba i-PD inamathele kwiiathom ze-hydrogen ezinobunzima obungaphantsi komda wokufunyanwa kwe-SIMS (2 × 1016 cm-3) okanye iziphene zenqaku ezibangelwa kukufakelwa. Kufuneka kuqatshelwe ukuba asikaqinisekisi ukwanda kokumelana kwimeko ngenxa yokwandiswa kwe-1SSF emva komthwalo wamandla okunyuka. Oku kusenokuba kungenxa yoqhagamshelwano olungaphelelanga lwe-ohmic olwenziwe kusetyenziswa inkqubo yethu, oluya kupheliswa kungekudala.
Ukuqukumbela, siphuhlise indlela yokucima yokwandisa i-BPD ukuya kwi-1SSF kwii-diode ze-4H-SiC PiN sisebenzisa i-proton implantation ngaphambi kokwenziwa kwesixhobo. Ukuwohloka kophawu lwe-I–V ngexesha lokufakelwa kweproton akunamsebenzi, ingakumbi kwidosi ye-proton eyi-1012 cm–2, kodwa isiphumo sokuthintela ukwanda kwe-1SSF sibalulekile. Nangona kolu phononongo senze ii-diode ze-PiN ezinobukhulu obuyi-10 µm kunye ne-proton implantation ukuya kubunzulu be-10 µm, kusenokwenzeka ukuphucula ngakumbi iimeko zokufakelwa kwaye sizisebenzise ukwenza ezinye iintlobo zezixhobo ze-4H-SiC. Iindleko ezongezelelweyo zokwenza isixhobo ngexesha lokufakelwa kweproton kufuneka ziqwalaselwe, kodwa ziya kufana nezo zokufakelwa kwe-aluminium ion, eyinkqubo ephambili yokwenza izixhobo zamandla ze-4H-SiC. Ke ngoko, ukufakelwa kweproton ngaphambi kokucubungula isixhobo yindlela enokwenzeka yokwenza izixhobo zamandla ze-4H-SiC bipolar ngaphandle kokonakala.
I-wafer ye-4-intshi n-type 4H-SiC enobukhulu be-epitaxial layer ye-10 µm kunye ne-doping concentration ye-donor ye-1 × 1016 cm–3 yasetyenziswa njengesampulu. Ngaphambi kokucubungula isixhobo, ii-H+ ions zafakwa kwipleyiti ngamandla okukhawulezisa e-0.95 MeV kubushushu begumbi ukuya kubunzulu obumalunga ne-10 μm kwi-engile eqhelekileyo kumphezulu wepleyiti. Ngexesha lokufakelwa kweproton, kwasetyenziswa imaski kwipleyiti, kwaye ipleyiti yayineendawo ezingenazo kwaye ine-proton dose ye-1012, 1014, okanye i-1016 cm-2. Emva koko, ii-Al ions ezine-proton doses ze-1020 kunye ne-1017 cm–3 zafakwa phezu kwe-wafer yonke ukuya kubunzulu be-0–0.2 µm kunye ne-0.2–0.5 µm ukusuka kumphezulu, kulandele i-annealing kwi-1600°C ukwenza i-carbon cap ukwenza i-ap layer. -type. Emva koko, uqhagamshelwano lweNi olungasemva lubekwe kwicala lesiseko, ngelixa uqhagamshelwano olungaphambili lweTi/Al oluyimilo ye-2.0 mm × 2.0 mm lwenziwe yi-photolithography kwaye inkqubo yokukhupha ibekwe kwicala le-epitaxial layer. Ekugqibeleni, ukucoca uqhagamshelwano kwenziwa kubushushu obuyi-700 °C. Emva kokusika i-wafer ibe ziitships, senze uhlalutyo loxinzelelo kunye nokusetyenziswa.
Iimpawu ze-I–V zee-PiN diodes ezenziweyo zibonwe kusetyenziswa i-HP4155B semiconductor parameter analyzer. Njengoxinzelelo lombane, i-10-millisecond pulsed current ye-212.5 A/cm2 yaziswa iiyure ezi-2 kwi-frequency ye-10 pulses/sec. Xa sikhetha i-current density okanye i-frequency esezantsi, asizange sibone ukwanda kwe-1SSF nakwi-PiN diode ngaphandle kwe-proton injection. Ngexesha le-voltage yombane esetyenzisiweyo, ubushushu be-PiN diode bumalunga ne-70°C ngaphandle kokufudumeza ngabom, njengoko kubonisiwe kuMfanekiso S8. Imifanekiso ye-Electroluminescent ifunyenwe ngaphambi nasemva koxinzelelo lombane kwi-current density ye-25 A/cm2. I-Synchrotron reflection grazing incidence X-ray topography isebenzisa i-monochromatic X-ray beam (λ = 0.15 nm) kwi-Aichi Synchrotron Radiation Center, i-ag vector kwi-BL8S2 yi--1-128 okanye i-11-28 (jonga ireferensi 44 ukuze ufumane iinkcukacha).).
I-voltage frequency kwi-forward current density ye-2.5 A/cm2 ikhutshwa nge-interval ye-0.5 V kumzobo 2 ngokwe-CVC yemeko nganye ye-PiN diode. Ukusuka kwi-mean value ye-stress Vave kunye ne-standard deviation σ ye-stress, sidweba i-normal distribution curve ngendlela yomgca onamachaphaza kuMfanekiso 2 sisebenzisa i-equation elandelayo:
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Ixesha lokuthumela: Novemba-06-2022
