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4H-SiC waxaa loo suuq geeyay sidii qalab loogu talagalay aaladaha semiconductor-ka awoodda leh. Si kastaba ha ahaatee, isku halaynta muddada dheer ee aaladaha 4H-SiC waa caqabad ku ah codsigooda ballaaran, dhibaatada ugu muhiimsan ee isku halaynta aaladaha 4H-SiC waa burburka laba-cirifoodka. Hoos u dhacan waxaa sababa hal cillad oo Shockley stacking cilad (1SSF) ah oo faafinta kala-baxa diyaaradda hoose ee kiristaalo 4H-SiC ah. Halkan, waxaan soo jeedinaynaa hab lagu xakameynayo ballaarinta 1SSF iyadoo la gelinayo protons-ka wafers-ka epitaxial-ka 4H-SiC. Diodes-ka PiN ee lagu sameeyay wafers-ka iyadoo la gelinayo proton-ka waxay muujiyeen astaamo isku mid ah oo danab-current ah sida diodes-ka iyada oo aan la gelin proton-ka. Taas bedelkeeda, ballaarinta 1SSF si wax ku ool ah ayaa loo xakameeyay diode-ka PiN-ka ee proton-ku-saleysan yahay. Sidaa darteed, ku-meelaynta protons-ka wafers-ka epitaxial-ka 4H-SiC waa hab wax ku ool ah oo lagu xakameynayo burburka laba-cirifoodka ee aaladaha semiconductor-ka awoodda leh ee 4H-SiC iyadoo la ilaalinayo waxqabadka qalabka. Natiijadani waxay gacan ka geysaneysaa horumarinta aaladaha 4H-SiC ee aadka loogu kalsoonaan karo.
Carbohydrate-ka Silicon (SiC) waxaa si weyn loogu aqoonsaday inuu yahay walax semiconductor ah oo loogu talagalay aaladaha semiconductor-ka ee awoodda sare leh, ee soo noqnoqda kuwaas oo ka shaqayn kara deegaanno adag1. Waxaa jira noocyo badan oo SiC ah, kuwaas oo ay ku jiraan 4H-SiC oo leh astaamo jireed oo heer sare ah oo qalabka semiconductor ah sida dhaqdhaqaaqa elektarooniga sare iyo goobta korontada ee burburka xooggan2. Wafer-yada 4H-SiC oo leh dhexroor 6 inji ah ayaa hadda la suuq gareeyaa waxaana loo isticmaalaa soo saarista ballaaran ee aaladaha semiconductor-ka awoodda leh3. Nidaamyada jiidista ee baabuurta korontada ku shaqeeya iyo tareennada waxaa lagu sameeyay iyadoo la adeegsanayo aaladaha semiconductor-ka awoodda leh ee 4H-SiC4.5. Si kastaba ha ahaatee, aaladaha 4H-SiC wali waxay la ildaran yihiin arrimaha isku halaynta muddada dheer sida burburka dielectric ama isku halaynta wareegga gaaban, 6,7 oo ka mid ah arrimaha ugu muhiimsan ee isku halaynta waa burburka laba-cirifoodka2,8,9,10,11. Hoos u dhaca laba-cirifoodka waxaa la ogaaday in ka badan 20 sano ka hor waxayna muddo dheer dhibaato ku ahayd sameynta qalabka SiC.
Hoos u dhaca laba-geesoodka ah waxaa sababa hal cillad oo Shockley stack ah (1SSF) oo ku jirta kiristaalo 4H-SiC ah oo leh kala-goysyada diyaaradda hoose (BPDs) oo ku faafaya dib-u-habayn isku-dhafan oo kor u qaaday kala-goysyada kala-goysyada (REDG)12,13,14,15,16,17,18,19. Sidaa darteed, haddii ballaarinta BPD lagu xakameeyo 1SSF, aaladaha awoodda 4H-SiC waa la samayn karaa iyada oo aan lahayn hoos u dhac laba-geesood ah. Dhowr hab ayaa la soo sheegay si loo xakameeyo faafinta BPD, sida BPD ilaa Thread Edge Dislocation (TED) isbeddelka 20,21,22,23,24. Wafers-ka epitaxial ee ugu dambeeyay ee SiC, BPD waxay inta badan ku jirtaa substrate-ka mana aha lakabka epitaxial sababtoo ah beddelka BPD ilaa TED inta lagu jiro marxaladda bilowga ah ee koritaanka epitaxial. Sidaa darteed, dhibaatada hartay ee hoos u dhaca laba-geesoodka ah waa qaybinta BPD ee substrate-ka 25,26,27. Gelinta "lakab xoojin isku dhafan" oo u dhexeeya lakabka leexashada iyo substrate-ka ayaa la soo jeediyay inay tahay hab wax ku ool ah oo lagu xakameynayo ballaarinta BPD ee substrate-ka28, 29, 30, 31. Lakabkani wuxuu kordhiyaa suurtagalnimada isku-darka labada-god ee elektaroonigga ah ee lakabka epitaxial iyo substrate-ka SiC. Yaraynta tirada lammaanayaasha-god ee elektaroonigga ah waxay yareysaa awoodda wadista ee REDG ilaa BPD ee substrate-ka, sidaa darteed lakabka xoojinta isku-dhafan wuxuu xakameyn karaa burburka laba-cirifoodka. Waa in la ogaadaa in gelinta lakabka ay ku lug leedahay kharashyo dheeraad ah oo ku yimaada soo saarista wafers-ka, iyada oo aan la gelin lakab way adag tahay in la yareeyo tirada lammaanayaasha-god ee elektaroonigga ah iyadoo la xakameynayo oo keliya xakamaynta cimriga sideha. Sidaa darteed, weli waxaa jira baahi xooggan oo loo qabo in la horumariyo habab kale oo xakameyn ah si loo gaaro dheelitir wanaagsan oo u dhexeeya kharashka wax soo saarka qalabka iyo wax soo saarka.
Maadaama kordhinta BPD ilaa 1SSF ay u baahan tahay dhaqdhaqaaq kala-goysyo qayb ah (PDs), ku dhejinta PD waa hab rajo leh oo lagu joojinayo burburka laba-cirifoodka. In kasta oo lagu soo warramey ku-xidhka PD ee wasakhda birta, FPD-yada ku jira substrate-ka 4H-SiC waxay ku yaalliin masaafo ka badan 5 μm dusha sare ee lakabka epitaxial. Intaa waxaa dheer, maadaama isku-xidhka faafinta ee bir kasta oo ku jira SiC uu aad u yar yahay, way adag tahay in wasakhda birta ay ku faafto substrate34. Sababtoo ah cufnaanta atomiga ee birta oo aad u weyn, ku-xidhka ion-ka ee biraha sidoo kale waa adag tahay. Taas bedelkeeda, marka la eego hydrogen, curiyaha ugu fudud, ions-ka (protons) waxaa lagu dhejin karaa 4H-SiC ilaa qoto dheer oo ka badan 10 µm iyadoo la adeegsanayo dardar-geliye fasalka MeV ah. Sidaa darteed, haddii ku-xidhka proton-ku uu saameeyo ku-xidhka PD, markaa waxaa loo isticmaali karaa in lagu xakameeyo faafinta BPD ee substrate-ka. Si kastaba ha ahaatee, ku-xidhka proton-ku wuxuu dhaawici karaa 4H-SiC wuxuuna keeni karaa hoos u dhac ku yimaada waxqabadka qalabka37,38,39,40.
Si looga gudbo burburka qalabka oo ay ugu wacan tahay beerista proton-ka, dib-u-hagaajinta heerkulka sare ayaa loo isticmaalaa in lagu hagaajiyo burburka, oo la mid ah habka dib-u-hagaajinta ee badanaa loo isticmaalo ka dib beerista ion-ka aqbalaha ee habka qalabka1, 40, 41, 42. In kasta oo spectrometry-ka mass ion-ka labaad (SIMS)43 uu soo sheegay faafinta hydrogen-ka sababtoo ah dib-u-hagaajinta heerkulka sare, waxaa suurtagal ah in cufnaanta atamka hydrogen-ka oo keliya ee u dhow FD aysan ku filnayn in la ogaado biinanka PR iyadoo la adeegsanayo SIMS. Sidaa darteed, daraasaddan, waxaan ku beernay protons-ka wafers-ka epitaxial-ka 4H-SiC ka hor habka soo saarista qalabka, oo ay ku jiraan dib-u-hagaajinta heerkulka sare. Waxaan u isticmaalnay diodes-ka PiN qaab-dhismeedyada qalabka tijaabada ah waxaanan ku samaynay wafers-ka epitaxial-ka 4H-SiC ee proton-ku-dhisay. Kadib waxaan aragnay astaamaha volt-ampere si aan u baranno burburka waxqabadka qalabka sababtoo ah duritaanka proton-ka. Kadib, waxaan aragnay ballaarinta 1SSF ee sawirrada electroluminescence (EL) ka dib markii aan ku isticmaalnay danab koronto diode-ka PiN. Ugu dambeyntii, waxaan xaqiijinay saameynta duritaanka proton ee ku aaddan xakamaynta ballaarinta 1SSF.
Jaantuska 1aad wuxuu muujinayaa astaamaha hadda-danab-wadareedka (CVCs) ee diode-yada PiN heerkulka qolka ee gobollada leh iyo kuwa aan lahayn ku-tallaalidda proton ka hor inta aan la gelin ku-tallaalidda. Diode-yada PiN oo leh duritaanka proton waxay muujinayaan astaamaha sixitaanka oo la mid ah diode-yada aan lahayn ku-tallaalidda proton, inkastoo astaamaha IV ay wadaagaan diode-yada. Si aan u muujinno farqiga u dhexeeya xaaladaha duritaanka, waxaan ku sawirnay inta jeer ee danab-wadareedka cufnaanta hadda ee hore ee 2.5 A/cm2 (oo u dhiganta 100 mA) sida sawir tirakoob ah sida lagu muujiyey Jaantuska 2aad. Qalooca lagu qiyaasay qaybinta caadiga ah waxaa sidoo kale lagu matalaa xariiq xariiq dhibic leh. Sida laga arki karo meelaha ugu sarreeya ee qaloocyada, iska caabbinta on-ka ayaa si yar u kordheysa qiyaasta proton-ka ee 1014 iyo 1016 cm-2, halka diode-ka PiN oo leh qiyaasta proton-ka ee 1012 cm-2 uu muujinayo ku dhawaad astaamo la mid ah kuwa aan lahayn ku-tallaalidda proton-ka. Waxaan sidoo kale sameynay beerista proton ka dib markii aan sameynay diode-yada PiN kuwaas oo aan muujin koronto-luminescence isku mid ah sababtoo ah dhaawaca uu sababay beerista proton sida lagu muujiyay Jaantuska S1 sida lagu sharaxay daraasadihii hore37,38,39. Sidaa darteed, ku-buufinta heerkul ah 1600 °C ka dib beerista Al ions waa hab lagama maarmaan ah si loo sameeyo qalab lagu dhaqaajiyo aqbalaha Al, kaas oo hagaajin kara dhaawaca uu keeno beerista proton, taas oo ka dhigaysa CVC-yada isku mid ah diode-yada PiN ee proton-ka ee la geliyay iyo kuwa aan la beerin. Soo noqnoqoshada hadda ee -5 V ayaa sidoo kale lagu soo bandhigay Jaantuska S2, ma jiro farqi weyn oo u dhexeeya diode-yada leh iyo kuwa aan lahayn duritaanka proton.
Astaamaha Volt-ampere ee diode-yada PiN oo leh iyo aan lahayn protons-ka la isku duro heerkulka qolka. Halyeeygu wuxuu tilmaamayaa qiyaasta protons-ka.
Soo noqnoqoshada danab ee hadda tooska ah 2.5 A/cm2 ee diode-yada PiN oo leh protons la duray iyo kuwa aan la durin. Xariiqda dhibcaha leh waxay u dhigantaa qaybinta caadiga ah.
Sawirka 3 wuxuu muujinayaa sawirka EL ee diode-ka PiN oo leh cufnaanta hadda ee 25 A/cm2 ka dib danab. Kahor inta aan la isticmaalin culayska hadda la riixay, gobollada mugdiga ah ee diode-ka lama arag, sida ku cad Sawirka 3. C2. Si kastaba ha ahaatee, sida ku cad sawirka 3a, diode-ka PiN oo aan lahayn ku-tallaalidda proton-ka, dhowr gobol oo xariijimo madow leh oo leh geeso iftiin ah ayaa la arkay ka dib markii la mariyay danab koronto. Gobollada mugdiga ah ee noocan oo kale ah ee usha u eg ayaa lagu arkay sawirrada EL ee 1SSF oo ka soo jeeda BPD ee substrate-ka28,29. Taa beddelkeeda, cillado is dulsaaran oo dheeraaday ayaa lagu arkay diode-ka PiN oo leh proton-yo la geliyay, sida ku cad Sawirka 3b-d. Annagoo adeegsanayna muuqaalka dhulka ee X-ray, waxaan xaqiijinay jiritaanka PRs kuwaas oo ka guuri kara BPD una gudbi kara substrate-ka ku yaal agagaarka xiriirada ee diode-ka PiN iyada oo aan la durin proton (Jaantuska 4: sawirkan iyada oo aan laga saarin elektroodka sare (sawir la qaaday, PR oo hoos yimaada elektroodka lama arki karo). Sidaa darteed, aagga mugdiga ah ee sawirka EL wuxuu u dhigmaa 1SSF BPD oo dheereysan oo ku jira substrate-ka. Sawirada EL ee diode-yada kale ee la rarayo ee PiN waxaa lagu muujiyay Jaantusyada 1 iyo 2. Fiidiyowyada S3-S6 oo leh iyo aan lahayn meelo mugdi ah oo dheereysan (sawirrada EL ee waqtigooda kala duwan ee diode-yada PiN iyada oo aan la durin proton oo lagu rakibay 1014 cm-2) ayaa sidoo kale lagu muujiyay Macluumaadka Dheeraadka ah.
Sawirada EL ee diodes-ka PiN ee 25 A/cm2 ka dib 2 saacadood oo cadaadis koronto ah (a) iyada oo aan la gelin proton iyo qiyaaso la geliyay oo ah (b) 1012 cm-2, (c) 1014 cm-2 iyo (d) 1016 cm-2 protons.
Waxaan xisaabinay cufnaanta 1SSF ee la ballaariyay annagoo xisaabinayna meelaha mugdiga ah ee leh geesaha dhalaalaya ee saddex diode PiN xaalad kasta, sida ku cad Jaantuska 5. Cufnaanta 1SSF ee la ballaariyay ayaa hoos u dhacda iyadoo la kordhinayo qiyaasta proton, xitaa qiyaasta 1012 cm-2, cufnaanta 1SSF ee la ballaariyay ayaa si weyn uga hooseysa diode PiN oo aan la gelin.
Cufnaanta korodhka diode-yada SF PiN oo leh iyo iyada oo aan lahayn ku-tallaalidda proton ka dib markii lagu shubay koronto garaacsan (xaalad kasta waxaa ku jiray saddex diode oo la raray).
Gaabinta cimriga side-ka ayaa sidoo kale saameyn ku yeelata joojinta ballaarinta, duritaanka proton-kuna wuxuu yareeyaa cimriga side-ka32,36. Waxaan aragnay cimriga side-ka lakab epitaxial ah oo dhumucdiisu tahay 60 µm oo leh protons-ka la duray oo ah 1014 cm-2. Laga bilaabo cimriga side-ka bilowga ah, inkastoo side-ka la geliyay uu qiimaha hoos u dhigo ilaa ~10%, side-ka la damiyay wuxuu dib ugu soo celiyaa ~50%, sida ku cad Jaantuska S7. Sidaa darteed, cimriga side-ka, oo hoos u dhacay awgeed side-ka la geliyay, waxaa dib loogu soo celiyaa side-ka heerkulka sare leh. Inkasta oo hoos u dhac 50% ah oo ku yimid cimriga side-ka uu sidoo kale yareeyo faafinta cilladaha is dulsaaran, astaamaha I-V, kuwaas oo badanaa ku tiirsan nolosha side-ka, waxay muujinayaan oo keliya farqi yar oo u dhexeeya diode-yada la duray iyo kuwa aan la gelin. Sidaa darteed, waxaan aaminsanahay in PD anchoring ay door ka ciyaarto joojinta ballaarinta 1SSF.
In kasta oo SIMS aysan ogaan haydarojiin ka dib markii lagu buufiyay heerkul ah 1600°C, sida lagu sheegay daraasadihii hore, waxaan aragnay saameynta ku-tallaalidda proton-ka ee xakamaynta ballaarinta 1SSF, sida lagu muujiyay Jaantusyada 1 iyo 4. 3, 4. Sidaa darteed, waxaan aaminsanahay in PD ay ku xiran tahay atamka haydarojiin oo cufnaanta ka hooseeya xadka ogaanshaha SIMS (2 × 1016 cm-3) ama cilladaha dhibcaha ee ay keento ku-tallaalidda. Waa in la ogaadaa inaanan xaqiijin koror ku yimid iska caabbinta xaaladda sababtoo ah kordhinta 1SSF ka dib culayska hadda socda. Tani waxay sabab u noqon kartaa xiriiro ohmic ah oo aan dhammaystirnayn oo la sameeyay iyadoo la adeegsanayo habkayaga, kaas oo la tirtiri doono mustaqbalka dhow.
Gunaanadkii, waxaan soo saarnay hab damin ah oo lagu kordhinayo BPD ilaa 1SSF diode-yada 4H-SiC PiN iyadoo la adeegsanayo ku-tallaalidda proton ka hor inta aan la samayn qalabka. Xumaanshaha astaamaha I-V inta lagu jiro ku-tallaalidda proton-ka waa mid aan muhiim ahayn, gaar ahaan qiyaasta proton-ka oo ah 1012 cm-2, laakiin saameynta xakamaynta ballaarinta 1SSF waa mid muhiim ah. Inkasta oo daraasaddan aan ku samaynay diode-yada PiN oo 10 µm qaro weyn leh oo leh ku-tallaalidda proton ilaa qoto dheer oo ah 10 µm, weli waa suurtogal in la sii wanaajiyo xaaladaha ku-tallaalidda oo lagu dabaqo si loo sameeyo noocyo kale oo qalab 4H-SiC ah. Kharashyada dheeraadka ah ee ku-tallaalidda qalabka inta lagu jiro ku-tallaalidda proton-ka waa in la tixgeliyaa, laakiin waxay la mid noqon doonaan kuwa ku-tallaalidda aluminium-ka ion-ka, kaas oo ah habka ugu weyn ee wax-soo-saarka ee aaladaha awoodda 4H-SiC. Sidaa darteed, ku-tallaalidda proton ka hor inta aan la farsamayn qalabka waa hab suurtagal ah oo lagu farsameeyo aaladaha awoodda laba-geesoodka ah ee 4H-SiC iyada oo aan lahayn burbur.
Wafer nooca 4-inji ah oo n-nooca 4H-SiC ah oo leh dhumuc lakab epitaxial ah oo ah 10 µm iyo isku-darka daawada deeq-bixiyaha oo ah 1 × 1016 cm–3 ayaa loo isticmaalay muunad ahaan. Kahor inta aan la farsamayn qalabka, ayoonada H+ waxaa lagu beeray saxanka iyadoo tamar dardargelin ah oo ah 0.95 MeV heerkulka qolka ilaa qoto dheer oo ah qiyaastii 10 μm xagal caadi ah oo dusha sare ee saxanka ah. Inta lagu guda jiray beerista proton-ka, maaskaro saxan ayaa la isticmaalay, saxankuna wuxuu lahaa qaybo aan lahayn oo leh qiyaas proton ah oo ah 1012, 1014, ama 1016 cm-2. Kadib, ayoonada Al oo leh qiyaaso proton ah oo ah 1020 iyo 1017 cm–3 ayaa lagu beeray waferka oo dhan ilaa qoto dheer oo ah 0–0.2 µm iyo 0.2–0.5 µm dusha sare, ka dibna waxaa lagu buufinayaa 1600°C si loo sameeyo dabool kaarboon ah si loo sameeyo lakab ap. -type. Dabadeed, xiriir Ni dhinac dambe ah ayaa la dhigay dhinaca substrate-ka, halka xiriir Ti/Al oo qaab shanlo ah oo 2.0 mm × 2.0 mm ah oo dhinaca hore ah oo lagu sameeyay sawir-qaadis iyo habka diirka ayaa lagu dhejiyay dhinaca lakabka epitaxial. Ugu dambeyntii, xoqidda taabashada waxaa lagu sameeyaa heerkul ah 700 °C. Ka dib markii aan u jarnay wafer-ka jajabyo, waxaan sameynay qeexitaan cadaadis iyo codsi.
Astaamaha I-V ee diode-yada la sameeyay ee PiN waxaa lagu arkay iyadoo la adeegsanayo falanqeeye halbeegga semiconductor-ka HP4155B. Sida cadaadis koronto, hadda garaaca 10-millisecond ah oo ah 212.5 A/cm2 ayaa la soo bandhigay muddo 2 saacadood ah iyadoo la adeegsanayo inta jeer ee 10 garaac/ilbiriqsi. Markii aan dooranay cufnaanta hadda ama soo noqnoqoshada hoose, ma aanan arag ballaarinta 1SSF xitaa diode-ka PiN iyada oo aan la isticmaalin duritaanka proton. Inta lagu jiro danabka korontada ee la adeegsaday, heerkulka diode-ka PiN waa qiyaastii 70°C iyada oo aan la isticmaalin kuleyl ula kac ah, sida lagu muujiyey Jaantuska S8. Sawirrada Elektroluminescent waxaa la helay ka hor iyo ka dib cadaadiska korontada cufnaanta hadda ee 25 A/cm2. Dhacdada daaqsinta milicsiga Synchrotron topography X-ray iyadoo la adeegsanayo shucaac X-ray monochromatic ah (λ = 0.15 nm) Xarunta Shucaaca Aichi Synchrotron, vector-ka ag ee BL8S2 waa -1-128 ama 11-28 (fiiri tixraaca 44 wixii faahfaahin ah). ).
Soo noqnoqoshada danabka ee cufnaanta hadda ee hore ee 2.5 A/cm2 waxaa laga soo saaraa iyadoo la adeegsanayo kala-goyn 0.5 V ah jaantuska 2 sida ku cad CVC ee xaalad kasta oo ka mid ah diode-ka PiN. Laga soo bilaabo qiimaha celceliska ee stress Vave iyo standard deviation σ ee stress-ka, waxaan sawiraynaa qalooc qaybinta caadiga ah oo qaab xariiq dhibic leh ku jira Jaantuska 2 annagoo adeegsanayna isla'egta soo socota:
Werner, MR & Fahrner, WR Dib u eegis ku saabsan agabka, dareemayaasha yar yar, nidaamyada iyo aaladaha loogu talagalay codsiyada heerkulka sare iyo deegaanka adag. Werner, MR & Fahrner, WR Dib u eegis ku saabsan agabka, dareemayaasha yar yar, nidaamyada iyo aaladaha loogu talagalay codsiyada heerkulka sare iyo deegaanka adag.Werner, MR iyo Farner, WR Dulmar guud oo ku saabsan agabka, dareemayaasha yaryar, nidaamyada iyo aaladaha loogu talagalay codsiyada heerkulka sare iyo jawiga adag. Werner, MR & Fahrner, WR. Werner, MR & Fahrner, WR Dib u eegista agabka, dareemayaasha yaryar, nidaamyada iyo aaladaha loogu talagalay heerkulka sare iyo codsiyada deegaanka ee xun.Werner, MR iyo Farner, WR Dulmar guud oo ku saabsan agabka, dareemayaasha yar yar, nidaamyada iyo aaladaha loogu talagalay codsiyada heerkulka sare iyo xaaladaha adag.IEEE Trans. Elektarooniga warshadaha. 48, 249–257 (2001).
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Waqtiga boostada: Noofambar-06-2022
