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4H-SiC yave kushandiswa sechishandiso chemidziyo yemagetsi. Zvisinei, kuvimbika kwenguva refu kwemidziyo ye4H-SiC chipingamupinyi pakushandiswa kwayo kwakakura, uye dambudziko guru rekuvimbika kwemidziyo ye4H-SiC ndeyekuora kwebipolar. Kuora uku kunokonzerwa nekupararira kweShockley stacking fault (1SSF) kwe basal plane dislocations mumakristaro e4H-SiC. Pano, tinokurudzira nzira yekudzvinyirira kuwedzera kwe1SSF nekuisa maproton pa4H-SiC epitaxial wafers. MaPiN diodes akagadzirwa pawafers ane proton implantation akaratidza hunhu hwakafanana nemagetsi emagetsi semadiodes asina proton implantation. Kusiyana neizvi, kuwedzera kwe1SSF kunodziviswa zvinobudirira muPiN diode yakaisirwa proton. Saka, kuiswa kwemaproton mu4H-SiC epitaxial wafers inzira inoshanda yekudzvinyirira kuora kwebipolar kwemidziyo yemagetsi ye4H-SiC uku uchichengetedza mashandiro emudziyo. Mhedzisiro iyi inobatsira mukugadzirwa kwemidziyo ye4H-SiC yakavimbika zvikuru.
Silicon carbide (SiC) inozivikanwa zvakanyanya semidziyo ye semiconductor yemidziyo ye semiconductor ine simba guru, ine frequency yakakwira inogona kushanda munzvimbo dzakaoma1. Kune akawanda maSiC polytypes, pakati pawo 4H-SiC ine hunhu hwakanaka hwe semiconductor device senge kufamba kwema electron akawanda uye simba remagetsi rakapwanyika2. 4H-SiC wafers dzine dhayamita ye 6 inches parizvino dziri kutengeswa uye dzinoshandiswa kugadzira michina ye semiconductor ine simba3. Masisitimu e traction emotokari dzemagetsi nezvitima akagadzirwa achishandisa michina ye semiconductor ine simba ye 4H-SiC4.5. Zvisinei, michina ye 4H-SiC ichiri kutambura nematambudziko ekuvimbika kwenguva refu akadai se dielectric breakdown kana short-circuit reliability,6,7 ayo chimwe chezvinhu zvakakosha zvekuvimbika i bipolar degradation2,8,9,10,11. Kuparadzwa uku kwe bipolar kwakawanikwa makore anopfuura makumi maviri apfuura uye kwave kuri dambudziko kwenguva refu mukugadzirwa kwemidziyo yeSiC.
Kuora kweBipolar kunokonzerwa nekamwe kaShockley stack defect (1SSF) mumakristaro e4H-SiC ane basal plane dislocations (BPDs) kanopararira ne recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Saka, kana BPD expansion ikadzvinyirirwa ku1SSF, 4H-SiC power devices dzinogona kugadzirwa pasina bipolar degradation. Nzira dzakasiyana dzakataurwa kuti dzinodzvinyirira BPD propagation, dzakadai seBPD kuThread Edge Dislocation (TED) transformation 20,21,22,23,24. Muma SiC epitaxial wafers achangoburwa, BPD inonyanya kuwanikwa mu substrate kwete mu epitaxial layer nekuda kwekushandurwa kweBPD kuTED panguva yekutanga kwekukura kwe epitaxial. Saka, dambudziko rasara rekuora kwebipolar ndiko kupararira kweBPD mu substrate 25,26,27. Kuiswa kwe "composite reinforcement layer" pakati pe drift layer ne substrate kwakaratidzwa senzira inoshanda yekudzivisa kuwedzera kweBPD mu substrate28, 29, 30, 31. Iyi layer inowedzera mukana wekuti electron-hole pair recombination mu epitaxial layer neSiC substrate. Kuderedza huwandu hwe electron-hole pairs kunoderedza simba reREDG kuenda kuBPD mu substrate, saka composite reinforcement layer inogona kudzvinyirira bipolar degradation. Zvinofanira kucherechedzwa kuti kuiswa kwe layer kunosanganisira mari yekuwedzera mukugadzirwa kwewafers, uye pasina kuiswa kwe layer zvakaoma kuderedza huwandu hwe electron-hole pairs nekudzora chete kutonga kwehupenyu hwe carrier. Nokudaro, kuchine kudiwa kukuru kwekugadzira dzimwe nzira dzekudzvinyirira kuti uwane chiyero chiri nani pakati pemutengo wekugadzira zvishandiso uye goho.
Nekuti kuwedzerwa kweBPD kuenda ku1SSF kunoda kufamba kwezvikamu zvePD (partial dislocations), kupinza PD inzira yakanaka yekudzivirira kupararira kwebipolar. Kunyangwe kupinza PD netsvina yesimbi kwataurwa, maFPD ari mu4H-SiC substrates ari padaro rinopfuura 5 μm kubva pamusoro pe epitaxial layer. Pamusoro pezvo, sezvo diffusion coefficient yechero simbi muSiC iri diki kwazvo, zvakaoma kuti tsvina yesimbi ipararire mu substrate34. Nekuda kwehuwandu hwakawanda hweatomu hwesimbi, kupinza maion esimbi kwakaomawo. Kusiyana neizvi, kana iri hydrogen, chinhu chakareruka, maion (maprotoni) anogona kuiswa mu4H-SiC kusvika pakadzika kweanopfuura 10 µm uchishandisa MeV-class accelerator. Saka, kana kupinza mapurotoni kuchikanganisa kupinza kwePD, saka inogona kushandiswa kudzvinyirira kupararira kweBPD mu substrate. Zvisinei, kupinza mapurotoni kunogona kukuvadza 4H-SiC uye kukonzera kudzikira kwekushanda kwemudziyo37,38,39,40.
Kuti tikunde kuora kwemudziyo nekuda kwekugadzirwa kweproton, kunyungudika kwekupisa kwakanyanya kunoshandiswa kugadzirisa kukuvara, zvakafanana nenzira yekunyungudika inowanzoshandiswa mushure mekunyungudika kweion mukugadzirwa kwemudziyo1, 40, 41, 42. Kunyangwe secondary ion mass spectrometry (SIMS)43 yakataura nezvekupararira kwehydrogen nekuda kwekushandiswa kwekupisa kwakanyanya, zvinogoneka kuti huwandu hwemaatomu ehydrogen ari pedyo neFD chete hauna kukwana kuona pinning yePR uchishandisa SIMS. Saka, muchidzidzo ichi, takaisa maproton mu4H-SiC epitaxial wafers tisati tagadzira mudziyo, kusanganisira kunyungudika kwekupisa kwakanyanya. Takashandisa maPiN diodes sezvimiro zvemuchina wekuyedza uye takaagadzira pa4H-SiC epitaxial wafers dzakaiswa proton. Takazoona hunhu hwevolt-ampere kuti tidzidze kuora kwekushanda kwemudziyo nekuda kwejekiseni reproton. Zvadaro, takaona kuwedzera kwe1SSF mumifananidzo ye electroluminescence (EL) mushure mekushandisa voltage yemagetsi kuPiN diode. Pakupedzisira, takasimbisa mhedzisiro yekubaiwa kweproton pakudziviswa kwekuwedzera kwe1SSF.
Mufananidzo 1 unoratidza hunhu hwemagetsi emagetsi (CVCs) ePiN diodes patembiricha yemukamuri munzvimbo dzine uye dzisina proton implantation isati yatanga pulsed current. MaPiN diodes ane proton injection anoratidza hunhu hwekugadzirisa hwakafanana nemadiodes asina proton injection, kunyangwe hunhu hweIV hwakagovaniswa pakati pemadiodes. Kuti tiratidze mutsauko uripo pakati pemamiriro einjection, takaronga voltage frequency pa forward current density ye2.5 A/cm2 (inoenderana ne100 mA) se statistical plot sezvakaratidzwa muMufananidzo 2. Curve inoyerwa nekugoverwa kwakajairika inomiririrwawo nemutsara wedotted line. . Sezvatinoona kubva pamisoro yemacurves, on-resistance inowedzera zvishoma paproton doses ye1014 ne1016 cm-2, nepo PiN diode ine proton dose ye1012 cm-2 ichiratidza hunhu hwakafanana nehwepasina proton implantation. Takaitawo proton implantation mushure mekugadzira maPiN diodes asina kuratidza uniform electroluminescence nekuda kwekukuvadzwa kwakakonzerwa nekuiswa kweproton sezvakaratidzwa muMufananidzo S1 sezvakatsanangurwa muzvidzidzo zvekare37,38,39. Saka, annealing pa1600 °C mushure mekuiswa maAl ions inzira inodiwa yekugadzira michina yekuisa Al acceptor, iyo inogona kugadzirisa kukuvara kwakakonzerwa nekuiswa kweproton, izvo zvinoita kuti maCVC ave akafanana pakati pemaproton PiN diodes akaiswa neasina kuiswa. Frequency ye reverse current pa -5 V inoratidzwawo muMufananidzo S2, hapana musiyano mukuru pakati pemadiodes ane uye asina proton injection.
Hunhu hwema "volt-ampere" e "PiN diodes" ane uye asina ma "proton" akaiswa patembiricha yemumba. Ngano iyi inoratidza huwandu hwema "proton".
Kuwanda kwevoltage pa direct current 2.5 A/cm2 yePiN diodes ine maproton akapinzwa neasina kupinzwa. Mutsetse une madot unoenderana nekugoverwa kwakajairika.
Pamufananidzo 3 panoratidza mufananidzo weEL wePiN diode ine current density ye25 A/cm2 mushure mevoltage. Usati waisa pulsed current load, nzvimbo dzakasviba dzediode hadzina kuonekwa, sezvakaratidzwa paMufananidzo 3. C2. Zvisinei, sezvakaratidzwa pamufananidzo 3a, muPiN diode isina proton implantation, nzvimbo dzinoverengeka dzine mitsetse yakasviba dzine mipendero yakajeka dzakaonekwa mushure mekushandisa electric voltage. Nzvimbo dzakadaro dzine shaped dark dzinoonekwa mumifananidzo yeEL ye1SSF inotangira paBPD mu substrate28,29. Pane kudaro, mamwe ma extended stacking faults akaonekwa muPiN diodes ane implanted protons, sezvakaratidzwa paMufananidzo 3b–d. Tichishandisa X-ray topography, takasimbisa kuvapo kwemaPR anogona kufamba kubva kuBPD kuenda kusubstrate pamucheto wekubatana muPiN diode pasina kupinza proton (Mufananidzo 4: mufananidzo uyu usina kubvisa electrode yepamusoro (yakatorwa mifananidzo, PR pasi pemaelectrode haionekwe). Nokudaro, nzvimbo yerima mumufananidzo weEL inoenderana ne1SSF BPD yakawedzerwa musubstrate. Mifananidzo yeEL yemamwe maPiN diode akatakura inoratidzwa muMifananidzo 1 ne2. Mavhidhiyo S3-S6 ane uye asina nzvimbo dzerima dzakareba (mifananidzo yeEL inochinja nguva yemaPiN diodes asina kupinza proton uye akaiswa pa1014 cm-2) anoratidzwawo muSupplementary Information.
Mifananidzo yeEL yema diode ePiN pa25 A/cm2 mushure memaawa maviri ekumanikidzwa kwemagetsi (a) pasina kuiswa kweproton uye nemadosi akaiswa e (b) 1012 cm-2, (c) 1014 cm-2 uye (d) 1016 cm-2 mapurotoni.
Takaverenga huwandu hwe1SSF yakawedzerwa nekuverenga nzvimbo dzine rima dzine mipendero yakajeka muma diode matatu ePiN pamamiriro ese ezvinhu, sezvakaratidzwa muMufananidzo 5. Huwandu hwe1SSF yakawedzerwa hunoderera nekuwedzera kweproton dose, uye kunyangwe pahuwandu hwe1012 cm-2, huwandu hwe1SSF yakawedzerwa hwakaderera zvakanyanya pane muPiN diode isina kuiswa.
Kuwedzera kwehuwandu hwemadiode eSF PiN ane uye asina mapurotoni mushure mekuiswa kwesimba remagetsi (mamiriro ese aisanganisira madiode matatu akazadzwa).
Kupfupisa hupenyu hwemutakuri kunokanganisawo kuderedzwa kwekuwedzera, uye kuisirwa kweproton kunoderedza hupenyu hwemutakuri32,36. Takaona hupenyu hwemutakuri muchikamu che epitaxial chakaita 60 µm ukobvu nemaprotoni akaisirwa e1014 cm-2. Kubva pahupenyu hwemutakuri hwekutanga, kunyangwe chisimbiso chinoderedza kukosha kusvika ~10%, kuisirwa kunotevera kunochidzorera ku ~50%, sezvakaratidzwa paMufananidzo S7. Nokudaro, hupenyu hwemutakuri, hwakaderedzwa nekuda kwekuisirwa kweproton, hunodzoserwa nekupisa kwakanyanya. Kunyangwe kudzikiswa kwe50% muhupenyu hwemutakuri kuchideredzawo kupararira kwezvikanganiso zve stacking, hunhu hweI–V, hunowanzoenderana nehupenyu hwemutakuri, hunoratidza misiyano midiki chete pakati pe diodes dzakaisirwa nedzisina kuiswa. Nokudaro, tinotenda kuti PD anchoring ine basa mukudzivisa kuwedzera kwe1SSF.
Kunyangwe SIMS isina kuona hydrogen mushure mekunyorova pa1600°C, sezvakataurwa muzvidzidzo zvekare, takaona mhedzisiro yekuiswa kweproton pakudziviswa kwekuwedzera kwe1SSF, sezvakaratidzwa muMifananidzo 1 ne4. 3, 4. Saka, tinotenda kuti PD yakasungirirwa nemaatomu ehydrogen ane density iri pasi pemuganho wekuona weSIMS (2 × 1016 cm-3) kana zvikanganiso zvepoindi zvinokonzerwa nekuiswa. Zvinofanira kucherechedzwa kuti hatina kusimbisa kuwedzera kwekusagadzikana kwe on-state nekuda kwekureba kwe1SSF mushure mekuwedzerwa kwesimba remagetsi. Izvi zvinogona kunge zvichikonzerwa nekubatana kwe ohmic isina kukwana kwakaitwa uchishandisa maitiro edu, ayo achabviswa munguva pfupi iri kutevera.
Mukupedzisa, takagadzira nzira yekudzima BPD kusvika ku1SSF muma 4H-SiC PiN diodes tichishandisa proton implantation mudziyo usati wagadzirwa. Kuora kwehunhu hweI–V panguva yekuisa proton hakuna kukosha, kunyanya pa proton dose ye1012 cm–2, asi mhedzisiro yekudzvinyirira kuwedzera kwe1SSF yakakosha. Kunyangwe muchidzidzo chino takagadzira maPiN diodes ane ukobvu hwe10 µm neproton implantation kusvika pakadzika kwe10 µm, zvichiri kukwanisika kuwedzera mamiriro ekuisa uye kuashandisa kugadzira mamwe marudzi emidziyo ye4H-SiC. Mari yekuwedzera yekugadzira mudziyo panguva yekuisa proton inofanira kufungwa nezvayo, asi ichave yakafanana neyekuisa aruminiyamu ion, inova ndiyo nzira huru yekugadzira michina yemagetsi ye4H-SiC. Saka, kuisa proton usati wagadzira mudziyo inzira inogona kugadzira michina yemagetsi ye4H-SiC bipolar pasina kuora.
Wafer ine 4-inch n-type 4H-SiC ine ukobvu hwe epitaxial layer hwe10 µm uye donor doping concentration ye1 × 1016 cm–3 yakashandiswa semuenzaniso. Vasati vagadzira mudziyo, ma H+ ions akaiswa muplate ne acceleration energy ye 0.95 MeV patembiricha yemukamuri kusvika pakadzika kweinenge 10 μm pakona yakajairika kune pamusoro peplate. Panguva yekuisa maproton, mask paplate yakashandiswa, uye plate yacho yaive nezvikamu zvisina uye ine proton dose ye 1012, 1014, kana 1016 cm-2. Zvadaro, ma Al ions ane proton doses ye 1020 uye 1017 cm–3 akaiswa pamusoro pewafer yese kusvika pakadzika kwe 0–0.2 µm uye 0.2–0.5 µm kubva pamusoro, zvichiteverwa ne annealing pa 1600°C kugadzira carbon cap kuti igadzire ap layer. -type. Zvadaro, kubatana kweNi parutivi rwekumashure kwakaiswa parutivi rwe substrate, ukuwo kubatana kweTi/Al kwepamberi kwakaita sekamu kwe2.0 mm × 2.0 mm kwakaumbwa ne photolithography uye maitiro ekubvisa akaiswa parutivi rwe epitaxial layer. Pakupedzisira, kusanganiswa kwekubatana kunoitwa patembiricha ye700 °C. Mushure mekucheka wafer kuita machipisi, takaita hunhu hwestress uye kushandisa.
Hunhu hweI–V hwemaPiN diodes akagadzirwa hwakaonekwa uchishandisa HP4155B semiconductor parameter analyzer. Sekumanikidzwa kwemagetsi, 10-millisecond pulsed current ye212.5 A/cm2 yakaunzwa kwemaawa maviri pafrequency ye10 pulses/sec. Patakasarudza density yakaderera yemagetsi kana frequency, hatina kuona 1SSF expansion kunyangwe muPiN diode isina proton injection. Munguva yemagetsi anoshandiswa, tembiricha yePiN diode inenge 70°C pasina kupisa nemaune, sezvakaratidzwa muMufananidzo S8. Mifananidzo yeElectroluminescent yakawanikwa pamberi uye mushure memagetsi pahuwandu hwe25 A/cm2. Synchrotron reflection grazing incidence X-ray topography uchishandisa monochromatic X-ray beam (λ = 0.15 nm) paAichi Synchrotron Radiation Center, ag vector muBL8S2 ndeye -1-128 kana 11-28 (ona ref. 44 kuti uwane rumwe ruzivo). ).
Mafrequency emagetsi pa forward current density ye2.5 A/cm2 anoburitswa ne interval ye0.5 V mu fig. 2 zvichienderana neCVC yemamiriro ese ePiN diode. Kubva pa mean value ye stress Vave uye standard deviation σ ye stress, tinonyora normal distribution curve muchimiro che dotted line muFigure 2 tichishandisa equation inotevera:
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Nguva yekutumira: Mbudzi-06-2022
