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4H-SiC yagulitsidwa ngati chida chogwiritsira ntchito zida zamagetsi zamagetsi. Komabe, kudalirika kwa nthawi yayitali kwa zida za 4H-SiC ndi cholepheretsa kugwiritsa ntchito kwawo kwakukulu, ndipo vuto lalikulu kwambiri lodalirika la zida za 4H-SiC ndi kuwonongeka kwa bipolar. Kuwonongeka kumeneku kumachitika chifukwa cha kufalikira kwa Shockley stacking fault (1SSF) kwa basal plane dislocations mu makristalo a 4H-SiC. Pano, tikupereka njira yochepetsera kukula kwa 1SSF mwa kuyika ma proton pa ma wafer a epitaxial a 4H-SiC. Ma diode a PiN opangidwa pa ma wafer okhala ndi proton implantation adawonetsa mawonekedwe ofanana a current-voltage monga ma diode opanda proton implantation. Mosiyana ndi izi, kukula kwa 1SSF kumachepetsedwa bwino mu diode ya PiN yomwe imayikidwa ndi proton. Chifukwa chake, kuyika ma proton mu ma wafer a epitaxial a 4H-SiC ndi njira yothandiza yochepetsera kuwonongeka kwa bipolar kwa zida zamagetsi zamagetsi za 4H-SiC pamene zikugwira ntchito bwino. Zotsatirazi zimathandiza pakupanga zida zodalirika kwambiri za 4H-SiC.
Silicon carbide (SiC) imadziwika kwambiri ngati chinthu chopangira zinthu zamagetsi ...
Kuwonongeka kwa bipolar kumachitika chifukwa cha vuto limodzi la Shockley stack defect (1SSF) mu makristalo a 4H-SiC okhala ndi basal plane dislocations (BPDs) omwe amafalikira ndi recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Chifukwa chake, ngati kukulitsa kwa BPD kwachepetsedwa kukhala 1SSF, zida zamagetsi za 4H-SiC zitha kupangidwa popanda kuwonongeka kwa bipolar. Njira zingapo zanenedwa kuti zimachepetsa kufalikira kwa BPD, monga BPD kupita ku Thread Edge Dislocation (TED) transformation 20,21,22,23,24. Mu ma wafers aposachedwa a SiC epitaxial, BPD imapezeka kwambiri mu substrate osati mu epitaxial layer chifukwa cha kusintha kwa BPD kukhala TED panthawi yoyambira kukula kwa epitaxial. Chifukwa chake, vuto lotsala la kuwonongeka kwa bipolar ndi kufalikira kwa BPD mu substrate 25,26,27. Kuyika "gawo lolimbitsa mphamvu" pakati pa gawo loyenda ndi gawo lapansi kwaperekedwa ngati njira yothandiza yochepetsera kukula kwa BPD mu gawo lapansi28, 29, 30, 31. Gawoli limawonjezera mwayi woti ma electron-hole pair abwererenso mu gawo la epitaxial ndi gawo la SiC. Kuchepetsa kuchuluka kwa ma electron-hole pair amachepetsa mphamvu yoyendetsera REDG kupita ku BPD mu gawo lapansi, kotero gawo lolimbitsa mphamvu lingathe kuletsa kuwonongeka kwa bipolar. Tiyenera kudziwa kuti kuyika gawo kumabweretsa ndalama zowonjezera pakupanga ma wafer, ndipo popanda kuyika gawo ndizovuta kuchepetsa kuchuluka kwa ma electron-hole pair pongoyang'anira nthawi yonse yonyamula. Chifukwa chake, pakadali pano pakufunika kwambiri kupanga njira zina zochepetsera kuti pakhale bwino pakati pa mtengo wopanga zida ndi phindu.
Popeza kufalikira kwa BPD kupita ku 1SSF kumafuna kusuntha kwa ma dislocations a partial (PDs), kuyika PD ndi njira yabwino yopewera kuwonongeka kwa bipolar. Ngakhale kuti PD imayika ndi zinthu zosafunika zachitsulo zanenedwa, ma FPD omwe ali mu 4H-SiC substrates ali pamtunda woposa 5 μm kuchokera pamwamba pa epitaxial layer. Kuphatikiza apo, popeza kufalikira kwa chitsulo chilichonse mu SiC ndi kochepa kwambiri, zimakhala zovuta kuti zinthu zosafunika zachitsulo zifalikire mu substrate34. Chifukwa cha kuchuluka kwa atomiki ya zitsulo, kuika ma ion a zitsulo nakonso n'kovuta. Mosiyana ndi zimenezi, pankhani ya hydrogen, chinthu chopepuka kwambiri, ma ion (ma proton) amatha kuikidwa mu 4H-SiC mpaka kuzama kopitilira 10 µm pogwiritsa ntchito accelerator ya MeV-class. Chifukwa chake, ngati kuyika kwa proton kumakhudza kuyika kwa PD, ndiye kuti kungagwiritsidwe ntchito kuletsa kufalikira kwa BPD mu substrate. Komabe, kuyika kwa proton kumatha kuwononga 4H-SiC ndikupangitsa kuti magwiridwe antchito a chipangizocho achepe37,38,39,40.
Kuti tithetse kuwonongeka kwa chipangizo chifukwa cha kulowetsedwa kwa proton, kulowetsedwa kwa kutentha kwambiri kumagwiritsidwa ntchito kukonza kuwonongeka, mofanana ndi njira yolowetsedwa yomwe imagwiritsidwa ntchito nthawi zambiri pambuyo pa kulowetsedwa kwa ion yolandirira pokonza chipangizo1, 40, 41, 42. Ngakhale kuti secondary ion mass spectrometry (SIMS)43 yanena kuti kufalikira kwa hydrogen chifukwa cha kulowetsedwa kwa kutentha kwambiri, ndizotheka kuti kuchuluka kwa maatomu a hydrogen pafupi ndi FD sikukwanira kuzindikira kupindika kwa PR pogwiritsa ntchito SIMS. Chifukwa chake, mu kafukufukuyu, tinayika ma proton mu ma wafer a epitaxial a 4H-SiC asanayambe kupanga chipangizocho, kuphatikizapo kulowetsedwa kwa kutentha kwambiri. Tinagwiritsa ntchito ma diode a PiN ngati kapangidwe ka chipangizo choyesera ndipo tinawapanga pa ma wafer a epitaxial a 4H-SiC omwe amalowetsedwa ndi proton. Kenako tinawona makhalidwe a volt-ampere kuti tiphunzire kuwonongeka kwa magwiridwe antchito a chipangizo chifukwa cha kulowetsedwa kwa proton. Pambuyo pake, tinawona kukula kwa 1SSF mu zithunzi za electroluminescence (EL) titagwiritsa ntchito voltage yamagetsi ku diode ya PiN. Pomaliza, tinatsimikizira zotsatira za jakisoni wa proton pakuletsa kufalikira kwa 1SSF.
Pa chithunzi 1 chikuwonetsa makhalidwe a current-voltage (CVCs) a ma diode a PiN pa kutentha kwa chipinda m'madera omwe ali ndi proton implantation ndi opanda pulsed current isanafike pulsed current. Ma diode a PiN okhala ndi proton injection amasonyeza makhalidwe okonzanso ofanana ndi ma diode opanda proton injection, ngakhale kuti makhalidwe a IV amagawidwa pakati pa ma diode. Kuti tisonyeze kusiyana pakati pa mikhalidwe ya injection, tinajambula ma voltage frequency pa forward current density ya 2.5 A/cm2 (yofanana ndi 100 mA) ngati statistical plot monga momwe zasonyezedwera pa Chithunzi 2. Curve yomwe ikuyerekezeredwa ndi normal distribution imayimiridwanso ndi dotted line. line. Monga momwe tingawonere kuchokera pamwamba pa ma curve, on-resistance imawonjezeka pang'ono pa proton doses ya 1014 ndi 1016 cm-2, pomwe PiN diode yokhala ndi proton dose ya 1012 cm-2 ikuwonetsa makhalidwe ofanana ndi omwe alibe proton implantation. Tinachitanso kuyika ma proton pambuyo pa kupanga ma PiN diode omwe sanawonetse kuwala kwa electroluminescence komwe kumachitika chifukwa cha kuwonongeka komwe kumachitika chifukwa cha kuyika ma proton monga momwe tawonetsera pa Chithunzi S1 monga tafotokozera m'maphunziro am'mbuyomu37,38,39. Chifukwa chake, kuyika ma ioni a Al pa 1600 °C pambuyo pa kuyika ma ioni a Al ndi njira yofunikira popanga zida zoyatsira Al acceptor, zomwe zimatha kukonza kuwonongeka komwe kumachitika chifukwa cha kuyika ma proton, zomwe zimapangitsa ma CVC kukhala ofanana pakati pa ma diode a proton PiN oyikidwa ndi osayikidwa. Kuchuluka kwa mphamvu yamagetsi pa -5 V kwawonetsedwanso mu Chithunzi S2, palibe kusiyana kwakukulu pakati pa ma diode okhala ndi jekeseni wa proton ndi opanda.
Makhalidwe a ma volt-ampere a ma diode a PiN okhala ndi ma proton omwe amalowetsedwa komanso opanda kutentha kwa chipinda. Nthanoyi imasonyeza mlingo wa ma proton.
Ma frequency a voteji pa direct current 2.5 A/cm2 a ma PiN diode okhala ndi ma proton obayidwa ndi osabayidwa. Mzere wokhala ndi madontho umagwirizana ndi kugawa kwabwinobwino.
Pa chithunzi 3 chikuwonetsa chithunzi cha EL cha diode ya PiN yokhala ndi mphamvu yamagetsi ya 25 A/cm2 pambuyo pa voltage. Asanayambe kugwiritsa ntchito mphamvu yamagetsi, madera amdima a diode sanawonedwe, monga momwe zasonyezedwera pa Chithunzi 3. C2. Komabe, monga momwe zasonyezedwera pa chithunzi 3a, mu diode ya PiN yopanda proton implantation, madera angapo amdima okhala ndi mikwingwirima yokhala ndi m'mphepete zowala adawonedwa atatha kugwiritsa ntchito magetsi amagetsi. Madera amdima otere okhala ngati ndodo amawonedwa mu zithunzi za EL za 1SSF zomwe zimachokera ku BPD mu substrate28,29. M'malo mwake, zolakwika zina zotalikirapo zidawonedwa mu ma diode a PiN okhala ndi ma proton olowetsedwa, monga momwe zasonyezedwera pa Chithunzi 3b–d. Pogwiritsa ntchito X-ray topography, tatsimikizira kukhalapo kwa ma PR omwe amatha kusuntha kuchokera ku BPD kupita ku substrate m'mphepete mwa ma contacts mu PiN diode popanda jakisoni wa proton (Chithunzi 4: chithunzichi popanda kuchotsa electrode yapamwamba (yojambulidwa, PR pansi pa ma electrode sikuwoneka). Chifukwa chake, malo amdima pachithunzi cha EL akugwirizana ndi 1SSF BPD yotambasuka mu substrate. Zithunzi za EL za ma diode ena odzaza a PiN akuwonetsedwa mu Zithunzi 1 ndi 2. Makanema a S3-S6 okhala ndi malo amdima otambasuka komanso opanda (zithunzi za EL zosintha nthawi za ma diode a PiN opanda jakisoni wa proton ndipo oyikidwa pa 1014 cm-2) akuwonetsedwanso mu Zowonjezera Zambiri.
Zithunzi za EL za ma diode a PiN pa 25 A/cm2 pambuyo pa maola awiri a mphamvu yamagetsi (a) popanda kulowetsedwa kwa proton komanso ndi mlingo wolowetsedwa wa (b) 1012 cm-2, (c) 1014 cm-2 ndi (d) 1016 cm-2 ma proton.
Tinawerengera kuchuluka kwa 1SSF yokulirapo powerengera madera amdima okhala ndi m'mbali zowala m'ma diode atatu a PiN pa vuto lililonse, monga momwe zasonyezedwera pa Chithunzi 5. Kuchuluka kwa 1SSF yokulirapo kumachepa ndi kuchuluka kwa mlingo wa proton, ndipo ngakhale pa mlingo wa 1012 cm-2, kuchuluka kwa 1SSF yokulirapo kumakhala kotsika kwambiri kuposa mu diode ya PiN yosabzalidwa.
Kuchuluka kwa ma diode a SF PiN okhala ndi kapena opanda proton implantation pambuyo podzaza ndi pulsed current (boma lililonse linali ndi ma diode atatu odzaza).
Kufupikitsa nthawi ya moyo wa chonyamulira kumakhudzanso kutsekeka kwa kukula, ndipo jakisoni wa protoni kumachepetsa nthawi ya moyo wa chonyamulira32,36. Tawona nthawi ya moyo wa chonyamulira mu gawo la epitaxial la 60 µm lokhala ndi ma protoni obayidwa a 1014 cm-2. Kuyambira nthawi ya moyo wa chonyamulira choyamba, ngakhale kuti chonyamuliracho chimachepetsa mtengo kufika pa ~10%, kutsatizana kwa annealing kumachibwezeretsa kufika pa ~50%, monga momwe zasonyezedwera pa Chithunzi S7. Chifukwa chake, nthawi ya moyo wa chonyamulira, yomwe yachepetsedwa chifukwa cha kuyika kwa protoni, imabwezeretsedwanso ndi kuyika kwa kutentha kwambiri. Ngakhale kuchepa kwa 50% kwa moyo wa chonyamulira kumaletsanso kufalikira kwa zolakwika zomangira, makhalidwe a I–V, omwe nthawi zambiri amadalira moyo wa chonyamulira, amangowonetsa kusiyana kochepa pakati pa ma diode obayidwa ndi osabzalidwa. Chifukwa chake, tikukhulupirira kuti kuyika kwa PD kumathandiza poletsa kukula kwa 1SSF.
Ngakhale SIMS sinazindikire haidrojeni itatha kutenthedwa pa 1600°C, monga momwe tafotokozera m'maphunziro am'mbuyomu, tinaona momwe kulowetsedwa kwa proton kumakhudzira kutsekereza kwa kukula kwa 1SSF, monga momwe zasonyezedwera mu Zithunzi 1 ndi 4. 3, 4. Chifukwa chake, tikukhulupirira kuti PD imakhazikika ndi maatomu a haidrojeni okhala ndi kachulukidwe kochepera malire ozindikira a SIMS (2 × 1016 cm-3) kapena zolakwika za mfundo zomwe zimayambitsidwa ndi kulowetsedwa. Tiyenera kudziwa kuti sitinatsimikizire kuwonjezeka kwa kukana kwa on-state chifukwa cha kutalika kwa 1SSF pambuyo pa katundu wamagetsi wokwera. Izi zitha kukhala chifukwa cha kukhudzana kosakwanira kwa ohmic komwe kumachitika pogwiritsa ntchito njira yathu, komwe kudzachotsedwa posachedwa.
Pomaliza, tinapanga njira yozimitsira BPD kuti ifike pa 1SSF mu ma diode a 4H-SiC PiN pogwiritsa ntchito proton implantation chipangizo chisanapangidwe. Kuwonongeka kwa khalidwe la I–V panthawi yopangira proton sikuli kofunikira, makamaka pa mlingo wa proton wa 1012 cm–2, koma zotsatira za kuletsa kukula kwa 1SSF ndizofunikira kwambiri. Ngakhale mu kafukufukuyu tinapanga ma diode a PiN okhuthala a 10 µm okhala ndi proton implantation mpaka kuzama kwa 10 µm, n'zothekabe kukonza bwino momwe zinthu zimakhalira ndikuzigwiritsa ntchito popanga mitundu ina ya zida za 4H-SiC. Ndalama zina zopangira chipangizo panthawi yopangira proton ziyenera kuganiziridwa, koma zidzakhala zofanana ndi zomwe zimagwiritsidwa ntchito popanga aluminiyamu ion, yomwe ndi njira yayikulu yopangira zida zamagetsi za 4H-SiC. Chifukwa chake, kupanga proton musanagwiritse ntchito chipangizo ndi njira yomwe ingagwiritsidwe ntchito popanga zida zamagetsi za 4H-SiC bipolar popanda kuwonongeka.
Chikwama cha 4-inch n-type 4H-SiC chokhala ndi makulidwe a epitaxial layer a 10 µm ndi donor doping concentration ya 1 × 1016 cm–3 chinagwiritsidwa ntchito ngati chitsanzo. Asanagwiritse ntchito chipangizochi, ma H+ ion anaikidwa mu mbale ndi mphamvu yofulumira ya 0.95 MeV kutentha kwa chipinda mpaka kuzama kwa pafupifupi 10 μm pa ngodya yabwinobwino pamwamba pa mbale. Panthawi yoyika ma proton, chigoba pa mbale chinagwiritsidwa ntchito, ndipo mbaleyo inali ndi magawo opanda ndipo inali ndi proton dose ya 1012, 1014, kapena 1016 cm-2. Kenako, ma Al ion okhala ndi ma proton dose a 1020 ndi 1017 cm–3 anaikidwa pa chikwama chonsecho mpaka kuzama kwa 0–0.2 µm ndi 0.2–0.5 µm kuchokera pamwamba, kutsatiridwa ndi annealing pa 1600°C kuti apange carbon cap kuti apange ap layer. -type. Pambuyo pake, kukhudzana kwa Ni kumbuyo kunayikidwa mbali ya substrate, pomwe kukhudzana kwa mbali yakutsogolo kwa Ti/Al kooneka ngati chisa cha 2.0 mm × 2.0 mm komwe kunapangidwa ndi photolithography ndipo njira yochotsera inayikidwa mbali ya epitaxial layer. Pomaliza, kukhudzana kumachitika kutentha kwa 700 °C. Titadula wafer kukhala tchipisi, tinachita kusanthula ndi kugwiritsa ntchito mphamvu.
Makhalidwe a I–V a ma diode a PiN opangidwa adawonedwa pogwiritsa ntchito HP4155B semiconductor parameter analyzer. Monga mphamvu yamagetsi, mphamvu ya pulsed ya 10-millisecond ya 212.5 A/cm2 idayambitsidwa kwa maola awiri pafupipafupi ya ma pulses 10/sekondi. Tikasankha mphamvu yamagetsi yotsika kapena pafupipafupi, sitinawone kukula kwa 1SSF ngakhale mu diode ya PiN yopanda jekeseni ya proton. Panthawi yamagetsi ogwiritsidwa ntchito, kutentha kwa diode ya PiN kumakhala pafupifupi 70°C popanda kutentha mwadala, monga momwe zasonyezedwera pa Chithunzi S8. Zithunzi za electroluminescent zidapezeka isanafike komanso itatha mphamvu yamagetsi pa mphamvu yamagetsi ya 25 A/cm2. Synchrotron reflection grassing incidence X-ray topography pogwiritsa ntchito kuwala kwa X-ray monochromatic (λ = 0.15 nm) ku Aichi Synchrotron Radiation Center, vector ya ag mu BL8S2 ndi -1-128 kapena 11-28 (onani ref. 44 kuti mudziwe zambiri). ).
Ma voltage frequency pa forward current density ya 2.5 A/cm2 amachotsedwa ndi interval ya 0.5 V mu chithunzi 2 malinga ndi CVC ya mkhalidwe uliwonse wa PiN diode. Kuchokera ku avereji ya stress Vave ndi standard deviation σ ya stress, tikuwonetsa normal distribution curve mu mawonekedwe a mzere wokhala ndi madontho mu Chithunzi 2 pogwiritsa ntchito equation yotsatirayi:
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Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Pa mphamvu yoyendetsera kayendedwe ka zolakwika zobwezerezedwanso mu 4H–SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Pa mphamvu yoyendetsera kayendedwe ka zolakwika zobwezerezedwanso mu 4H-SiC.Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, ndi Hobart, KD Pa mphamvu yoyendetsera kayendedwe ka zolakwika zobwezerezedwanso mu 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, ndi Hobart, KD, Ponena za mphamvu yoyendetsera kayendedwe ka zolakwika zobwezerezedwanso mu 4H-SiC.J. Kugwiritsa ntchito. fizikisi. 108, 044503 (2010).
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Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Chitsanzo cha Quantum well action chopangira cholakwika chimodzi cha Shockley stacking mu kristalo ya 4H-SiC pansi pa mikhalidwe yosagwirizana. Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Chitsanzo cha Quantum well action chopangira cholakwika chimodzi cha Shockley stacking mu kristalo ya 4H-SiC pansi pa mikhalidwe yosagwirizana.Mannen Y., Shimada K., Asada K., ndi Otani N. Chitsanzo cha chitsime cha quantum chopangira cholakwika chimodzi cha Shockley stacking mu kristalo ya 4H-SiC pansi pa mikhalidwe yosagwirizana.Mannen Y., Shimada K., Asada K. ndi Otani N. Chitsanzo cha kuyanjana kwa chitsime cha Quantum popanga zolakwika za single Shockley stacking mu makristalo a 4H-SiC pansi pa mikhalidwe yosagwirizana. J. Application. physics. 125, 085705 (2019).
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Zhang, Z., Moulton, E. & Sudarshan, TS Njira yochotsera kusokonekera kwa basal plane mu mafilimu opyapyala a SiC ndi epitaxy pa substrate yojambulidwa. Zhang, Z., Moulton, E. & Sudarshan, TS Njira yochotsera kusokonekera kwa basal plane mu mafilimu opyapyala a SiC ndi epitaxy pa substrate yojambulidwa.Zhang Z., Moulton E. ndi Sudarshan TS Njira yochotsera kusokonekera kwa ma base plane mu mafilimu opyapyala a SiC ndi epitaxy pa substrate yojambulidwa. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制. Zhang, Z., Moulton, E. & Sudarshan, TS Njira yochotsera filimu yopyapyala ya SiC podula gawo lapansi.Zhang Z., Moulton E. ndi Sudarshan TS Njira yochotsera kusokonekera kwa ma base plane mu mafilimu opyapyala a SiC ndi epitaxy pa ma etched substrates.kugwiritsa ntchito fizikisi Wright. 89, 081910 (2006).
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Nthawi yotumizira: Novembala-06-2022
