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Kua hokohokohia te 4H-SiC hei rauemi mō ngā taputapu haurua hiko. Heoi, ko te pono mō te wā roa o ngā taputapu 4H-SiC he arai ki tā rātou whakamahinga whānui, ā, ko te raruraru pono nui rawa atu o ngā taputapu 4H-SiC ko te whakahekenga bipolar. Ko tēnei whakahekenga ka puta mai i te horapa kotahi o te hapa tāpae Shockley (1SSF) o ngā nekehanga papa turanga i roto i ngā tioata 4H-SiC. I konei, ka whakaarohia e mātou he tikanga mō te pehi i te whānui 1SSF mā te whakatō i ngā porotana ki runga i ngā papa epitaxial 4H-SiC. Ko ngā diode PiN i hangaia ki runga i ngā papa me te whakatōnga proton i whakaatu i ngā āhuatanga au-ngaohiko rite tonu ki ngā diode kāore he whakatōnga proton. He rerekē, ka pehia pai te whānui 1SSF i roto i te diode PiN kua whakatōngia ki te proton. Nō reira, ko te whakatōnga o ngā porotana ki roto i ngā papa epitaxial 4H-SiC he tikanga whai hua mō te pehi i te whakahekenga bipolar o ngā taputapu haurua hiko 4H-SiC me te pupuri tonu i te mahi a te taputapu. Ka whai wāhi tēnei hua ki te whanaketanga o ngā taputapu 4H-SiC tino pono.
E mōhiotia whānuitia ana te Silicon carbide (SiC) hei rauemi haurua-ā-ira mō ngā taputapu haurua-ā-ira mana-teitei, auau-teitei ka taea te mahi i roto i ngā taiao uaua1. He maha ngā momo SiC, kei roto i ēnei ko te 4H-SiC he āhuatanga ā-tinana tino pai o te taputapu haurua-ā-ira pērā i te nekehanga irahiko teitei me te papa hiko pakaru kaha2. Kei te hokohokohia ngā anga 4H-SiC me te diameter o te 6 inihi i tēnei wā, ā, e whakamahia ana mō te hanga papatipu o ngā taputapu haurua-ā-ira mana3. I hangaia ngā pūnaha kukume mō ngā waka hiko me ngā tereina mā te whakamahi i ngā taputapu haurua-ā-ira mana 4H-SiC4.5. Heoi, kei te raru tonu ngā taputapu 4H-SiC i ngā take pono mō te wā roa pērā i te pakaru hiko, te pono o te ara iahiko poto rānei,6,7 ko tētahi o ngā take pono nui ko te whakahekenga bipolar2,8,9,10,11. I kitea tēnei whakahekenga bipolar neke atu i te 20 tau ki muri, ā, kua roa e noho hei raruraru i roto i te hanganga taputapu SiC.
Ko te pakarutanga o te rua-ira ka puta mai i te hapa kotahi o te Shockley stack (1SSF) i roto i ngā tioata 4H-SiC me ngā dislocations papa basal (BPDs) e horapa ana mā te recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Nō reira, ki te pehia te whānui o te BPD ki te 1SSF, ka taea te hanga i ngā taputapu hiko 4H-SiC me te kore he pakarutanga rua-ira. He maha ngā tikanga kua pūrongohia hei pehi i te horapa o te BPD, pērā i te BPD ki te Thread Edge Dislocation transformation (TED) 20,21,22,23,24. I roto i ngā wafers epitaxial SiC hou, ko te BPD kei roto i te paparanga matua, ehara i te paparanga epitaxial nā te huringa o te BPD ki te TED i te wā tuatahi o te tipu epitaxial. Nō reira, ko te raru e toe ana o te pakarutanga rua-ira ko te tohatoha o te BPD i roto i te paparanga matua 25,26,27. Kua whakaarohia te whakaurunga o tētahi "paparanga whakapakari hiato" i waenganui i te paparanga nekeneke me te papa hei tikanga whai hua mō te pehi i te whānui o te BPD i roto i te papa28, 29, 30, 31. Ka whakanui ake tēnei paparanga i te tūponotanga o te whakakotahitanga o ngā takirua irahiko-pōha i roto i te paparanga epitaxial me te papa SiC. Mā te whakaiti i te maha o ngā takirua irahiko-pōha ka whakaiti i te kaha taraiwa o REDG ki te BPD i roto i te papa, nō reira ka taea e te paparanga whakapakari hiato te pehi i te hekenga bipolar. Me mōhio ko te whakaurunga o tētahi paparanga he utu tāpiri mō te hanga o ngā wafers, ā, ki te kore he whakaurunga o tētahi paparanga he uaua ki te whakaiti i te maha o ngā takirua irahiko-pōha mā te whakahaere noa i te whakahaere o te roanga o te oranga o te kaikawe. Nō reira, he nui tonu te hiahia ki te whakawhanake i ētahi atu tikanga pehi hei whakatutuki i tētahi taurite pai ake i waenga i te utu hanga taputapu me te hua.
Nā te mea ko te toronga o te BPD ki te 1SSF me neke ngā nekehanga wāhanga (PD), he huarahi whai hua te whakapiri i te PD hei aukati i te pirau bipolar. Ahakoa kua pūrongohia te whakapiri PD e ngā poke whakarewa, kei te tawhiti atu i te 5 μm mai i te mata o te paparanga epitaxial ngā FPD i roto i ngā papa 4H-SiC. Hei tāpiri, nā te mea he iti rawa te tauwehenga horapa o tētahi konganuku i roto i te SiC, he uaua ki ngā poke konganuku te horapa ki roto i te papa34. Nā te nui o te papatipu ngota o ngā konganuku, he uaua hoki te whakauru i ngā katote ki roto i ngā konganuku. He rerekē, i roto i te take o te hauwai, ko te huānga māmā rawa, ko ngā katote (ngā porotoni) ka taea te whakauru ki roto i te 4H-SiC ki te hohonutanga neke atu i te 10 µm mā te whakamahi i te whakateretere akomanga-MeV. Nō reira, ki te pā te whakapiri porotoni ki te whakapiri PD, ka taea te whakamahi hei pehi i te horapa o te BPD i roto i te papa. Heoi, ka taea e te whakauru porotoni te kino i te 4H-SiC, ā, ka heke te mahi a te taputapu37,38,39,40.
Hei whakakore i te ngoikore o te taputapu nā te whakaurunga o te porotini, ka whakamahia te whakamahana pāmahana teitei hei whakatika i ngā kino, he rite ki te tikanga whakamahana e whakamahia whānuitia ana i muri i te whakaurunga o te katote kaiwhiwhi i roto i te tukatuka taputapu1, 40, 41, 42. Ahakoa kua pūrongohia e te ine papatipu katote tuarua (SIMS)43 te horapa o te hauwai nā te whakamahana pāmahana teitei, tera pea ko te kiato o ngā ngota hauwai tata ki te FD anake kāore e ranea hei kite i te whakapiri o te PR mā te whakamahi i te SIMS. Nō reira, i roto i tēnei rangahau, i whakauruhia e mātou ngā porotini ki roto i ngā anga epitaxial 4H-SiC i mua i te tukanga hanga taputapu, tae atu ki te whakamahana pāmahana teitei. I whakamahia e mātou ngā diode PiN hei hanganga taputapu whakamātautau, ā, i hangaia ki runga i ngā anga epitaxial 4H-SiC kua whakauruhia ki te porotini. Kātahi ka tirohia e mātou ngā āhuatanga volt-ampere hei ako i te ngoikore o te mahi a te taputapu nā te werohanga porotini. I muri mai, i tirohia e mātou te whānui o te 1SSF i roto i ngā whakaahua electroluminescence (EL) i muri i te tono i te ngaohiko hiko ki te diode PiN. Hei whakamutunga, i whakaūhia e mātou te pānga o te werohanga pūmua ki te pehi i te whānui o te 1SSF.
Kei te pikitia. E whakaatu ana te Pikitia 1 i ngā āhuatanga o te au-ngaohiko (CVC) o ngā taio PiN i te pāmahana rūma i ngā rohe kei reira, kāore hoki he whakaurunga porotini i mua i te au pupuhi. Ko ngā taio PiN me te werohanga porotini e whakaatu ana i ngā āhuatanga whakatikatika e rite ana ki ngā taio kāore he werohanga porotini, ahakoa he rite tonu ngā āhuatanga IV i waenga i ngā taio. Hei tohu i te rerekētanga i waenga i ngā tikanga werohanga, i tuhia e mātou te auau ngaohiko i te kiato au whakamua o te 2.5 A/cm2 (e rite ana ki te 100 mA) hei kauwhata tatauranga e whakaaturia ana i te Pikitia 2. Ko te pihi e whakatatahia ana e te tohatoha noa e tohuhia ana hoki e te rārangi iraira. E kitea ana i ngā tihi o ngā pihi, ka paku piki ake te ātete-ā-ringa i ngā horopeta porotini o te 1014 me te 1016 cm-2, ko te taio PiN me te horopeta porotini o te 1012 cm-2 e whakaatu ana i ngā āhuatanga tata rite ki te kore he whakaurunga porotini. I whakahaerehia hoki e mātou te whakaurunga porotini i muri i te hanganga o ngā diode PiN kāore i whakaatu i te electroluminescence ōrite nā te kino i puta mai i te whakaurunga porotini e whakaaturia ana i te Pikitia S1 e ai ki te whakaahuatanga i roto i ngā rangahau o mua37,38,39. Nō reira, ko te whakamahana i te 1600 °C i muri i te whakaurunga o ngā ion Al he tukanga e tika ana hei hanga taputapu hei whakahohe i te kaiwhiwhi Al, ka taea te whakatika i te kino i puta mai i te whakaurunga porotini, e rite ai ngā CVC i waenga i ngā diode PiN porotini kua whakauruhia me te kore kua whakauruhia. Kei te whakaatuhia hoki te auau o te au whakamuri i te -5 V i te Pikitia S2, kāore he rerekētanga nui i waenga i ngā diode me te werohanga porotini me te kore werohanga porotini.
Ngā āhuatanga o te volt-ampere o ngā diode PiN me ngā porotana werohanga, me ngā porotana kāore i werohangahia i te pāmahana rūma. E tohu ana te tohu i te horopeta o ngā porotana.
Auautanga ngaohiko i te iahiko tika 2.5 A/cm2 mō ngā diode PiN me ngā porotona werohanga me ngā porotona kāore i werohanga. E rite ana te rārangi iraira ki te tohatoha noa.
Kei te pikitia 3 te whakaahua EL o tētahi diode PiN me te kiato iahiko o te 25 A/cm2 i muri i te ngaohiko. I mua i te whakamahinga o te kawenga iahiko pāorooro, kāore i kitea ngā rohe pōuri o te diode, e whakaaturia ana i te Pikitia 3. C2. Heoi, e whakaaturia ana i te pikitia 3a, i roto i tētahi diode PiN kāore he whakatōnga porotana, he maha ngā rohe pōuri me ngā taha mārama i kitea i muri i te whakamahinga o te ngaohiko hiko. Ka kitea ēnei rohe pōuri āhua-tokotoko i roto i ngā whakaahua EL mō te 1SSF e toro atu ana mai i te BPD i roto i te papa28,29. Engari, i kitea ētahi hapa whakarārangi roa i roto i ngā diode PiN me ngā porotana kua whakatōngia, e whakaaturia ana i te Pikitia 3b–d. Mā te whakamahi i te āhua o te hihi-X, i whakaūhia e mātou te aroaro o ngā PR ka taea te neke mai i te BPD ki te papa i te taha o ngā hononga i roto i te diode PiN me te kore e werohia te porowini (Pikitia 4: tēnei whakaahua me te kore e tango i te hiko o runga (i te whakaahua, kāore e kitea te PR i raro i ngā hiko). Nō reira, ko te wāhi pōuri i roto i te whakaahua EL e rite ana ki te 1SSF BPD kua roa i roto i te papa. Ko ngā whakaahua EL o ētahi atu diode PiN kua utaina e whakaatuhia ana i roto i ngā Pikitia 1 me te 2. Ko ngā ataata S3-S6 me ngā wāhi pōuri kua roa, me te kore (ngā whakaahua EL rerekē-wā o ngā diode PiN me te kore e werohia te porowini, ā, kua whakatōkia ki te 1014 cm-2) e whakaatuhia ana hoki i roto i ngā Mōhiohio Tāpiri.
Ngā whakaahua EL o ngā diode PiN i te 25 A/cm2 i muri i te 2 hāora o te ahotea hiko (a) me te kore he whakatōnga porotini me ngā horopeta whakatōnga o (b) 1012 cm-2, (c) 1014 cm-2 me (d) 1016 cm-2 porotini.
I tatauhia e mātou te mātotoru o te 1SSF kua whakawhanuitia mā te tatau i ngā wāhi pōuri me ngā taha kanapa i roto i ngā diode PiN e toru mō ia āhuatanga, e whakaaturia ana i te Pikitia 5. Ka heke te mātotoru o te 1SSF kua whakawhanuitia me te pikinga o te horopeta porotoni, ā, ahakoa he horopeta 1012 cm-2, he iti ake te mātotoru o te 1SSF kua whakawhanuitia i tērā i roto i tētahi diode PiN kāore i whakatōkia.
Te pikinga ake o ngā mātotoru o ngā taio SF PiN me te whakaurunga porotoni, me te kore whakaurunga porotoni i muri i te utaina me te iahiko pāorooro (e toru ngā taio kua utaina i ia āhua).
Mā te whakapoto i te roanga o te oranga o te kaikawe ka pāngia hoki te pehitanga o te whānui, ā, ka whakaitihia te roanga o te oranga o te kaikawe32,36. Kua kitea e mātou ngā roanga o te oranga o te kaikawe i roto i tētahi paparanga epitaxial 60 µm te matotoru me ngā proton i werohia he 1014 cm-2. Mai i te roanga o te oranga o te kaikawe tuatahi, ahakoa ka whakaitihia te uara o te whakaurunga ki te ~10%, ka whakahokia mai e te whakamahana i muri mai ki te ~50%, e whakaaturia ana i te Pikitia S7. Nō reira, ko te roanga o te oranga o te kaikawe, i whakaitihia nā te whakaurunga proton, ka whakahokia mai mā te whakamahana pāmahana-tiketike. Ahakoa ka pehihia hoki te horapa o ngā hapa whakarārangi e te 50% whakahekenga o te roanga o te oranga o te kaikawe, ko ngā āhuatanga I–V, e whakawhirinaki ana ki te roanga o te oranga o te kaikawe, he iti noa ngā rerekētanga e whakaatu ana i waenga i ngā diode i werohia me ngā diode kāore i te whakaurua. Nō reira, e whakapono ana mātou he wāhi nui te punga PD ki te aukati i te whānui o te 1SSF.
Ahakoa kāore i kitea e te SIMS te hauwai i muri i te whakamahana i te 1600°C, e ai ki ngā rangahau o mua, i kitea e mātou te pānga o te whakaurunga porotoni ki te pehi i te whānui o te 1SSF, e whakaaturia ana i ngā Pikitia 1 me te 4. 3, 4. Nō reira, e whakapono ana mātou kei te mau te PD i ngā ngota hauwai he mātotoru kei raro iho i te rohe kitenga o te SIMS (2 × 1016 cm-3) ngā hapa pūwāhi rānei i puta mai i te whakaurunga. Me mōhio kāore anō mātou kia whakaū i te pikinga o te ātete ā-kanohi nā te roa o te 1SSF i muri i te kawenga iahiko ngaru. Tērā pea nā ngā hononga ohmic kāore i tino tika i hangaia mā te whakamahi i tā mātou tukanga, ka whakakorea i roto i ngā wā tata nei.
Hei whakamutunga, i whakawhanakehia e mātou he tikanga tinei hei whakawhānui i te BPD ki te 1SSF i roto i ngā diode PiN 4H-SiC mā te whakamahi i te whakaurunga proton i mua i te hanganga o te taputapu. Kāore i te nui te hekenga o te āhuatanga I–V i te wā o te whakaurunga proton, inā koa i te horopeta proton o te 1012 cm–2, engari he nui te pānga o te pehi i te whānui o te 1SSF. Ahakoa i roto i tēnei rangahau i hangaia e mātou he diode PiN matotoru 10 µm me te whakaurunga proton ki te hohonutanga o te 10 µm, ka taea tonu te arotau ake i ngā āhuatanga whakaurunga me te whakamahi i aua mea hei hanga i ētahi atu momo taputapu 4H-SiC. Me whai whakaaro ki ngā utu tāpiri mō te hanganga taputapu i te wā o te whakaurunga proton, engari ka rite ki ērā mō te whakaurunga ira konumohe, koinei te tukanga hanganga matua mō ngā taputapu hiko 4H-SiC. Nō reira, ko te whakaurunga proton i mua i te tukatuka taputapu he tikanga pea mō te hanga i ngā taputapu hiko bipolar 4H-SiC me te kore e heke.
I whakamahia he anga 4H-SiC momo-n 4-inihi me te matotoru o te paparanga epitaxial o te 10 µm me te kukū tāpiringa kaiāwhina o te 1 × 1016 cm–3 hei tauira. I mua i te tukatuka i te taputapu, i whakatōngia ngā katote H+ ki roto i te pereti me te kaha whakatere o te 0.95 MeV i te pāmahana rūma ki te hohonutanga o te 10 μm i te koki noa ki te mata o te pereti. I te wā i whakatōngia ai te pūmua, i whakamahia he kopare ki runga i te pereti, ā, he wāhanga kei te pereti kāore he me te horopeta pūmua o te 1012, 1014, 1016 cm-2 rānei. Kātahi ka whakatōngia ngā katote Al me ngā horopeta pūmua o te 1020 me te 1017 cm–3 ki runga i te anga katoa ki te hohonutanga o te 0–0.2 µm me te 0.2–0.5 µm mai i te mata, ā, whai muri ko te whakamahana i te 1600°C hei hanga i te taupoki waro hei hanga i te paparanga ap. -momo. I muri mai, i whakatakotoria he hononga Ni taha muri ki te taha o te papa, ā, i whakatakotoria he hononga Ti/Al taha mua he āhua heru 2.0 mm × 2.0 mm i hangaia mā te whakaahua whakaahua me te tukanga tihore i whakatakotoria ki te taha paparanga epitaxial. Hei whakamutunga, ka mahia te whakamahana hononga i te pāmahana 700 °C. Whai muri i te tapahi i te papa kia maramara, i whakahaerehia e mātou te whakaahuatanga ahotea me te tono.
I tirohia ngā āhuatanga I–V o ngā diode PiN i hangaia mā te whakamahi i tētahi tātari tawhā haurua-ira HP4155B. Hei ahotea hiko, i whakaurua he iahiko pupuhi 10-mirihekona o te 212.5 A/cm2 mō ngā hāora e 2 i te auau o te 10 ngā pupuhi/hekona. I te wā i whiriwhiria ai e mātou he iti ake te kiato iahiko, te auau rānei, kāore mātou i kite i te whānui o te 1SSF ahakoa i roto i tētahi diode PiN kāore he werohanga porotini. I te wā e whakamahia ana te ngaohiko hiko, ko te pāmahana o te diode PiN kei te 70°C me te kore he whakamahana ā-taurangi, e whakaaturia ana i te Pikitia S8. I whiwhihia ngā whakaahua hiko-whakaata i mua atu, ā, i muri mai i te ahotea hiko i te kiato iahiko o te 25 A/cm2. Ko te topography hihi-X e whai ana i te whakaata Synchrotron e whakamahi ana i tētahi hihi-X kotahi-tae (λ = 0.15 nm) i te Aichi Synchrotron Radiation Center, ko te vector ag i roto i te BL8S2 ko -1-128, 11-28 rānei (tirohia te tohutoro 44 mō ētahi atu taipitopito). ).
Ka tangohia te auau ngaohiko i te kiato iahiko whakamua o te 2.5 A/cm2 me te āputa o te 0.5 V i te pikitia 2 e ai ki te CVC o ia āhua o te diode PiN. Mai i te uara toharite o te Vave ahotea me te paerewa rerekētanga σ o te ahotea, ka tuhia e mātou he pihi tohatoha noa i te āhua o te rārangi iraira i te pikitia 2 mā te whakamahi i te whārite e whai ake nei:
Arotake a Werner, MR & Fahrner, WR mō ngā rauemi, ngā pūoko moroiti, ngā pūnaha me ngā taputapu mō ngā tono pāmahana teitei me te taiao uaua. Arotake a Werner, MR & Fahrner, WR mō ngā rauemi, ngā pūoko moroiti, ngā pūnaha me ngā taputapu mō ngā tono pāmahana teitei me te taiao uaua.Werner, MR me Farner, WR He tirohanga whānui ki ngā rauemi, ngā pūoko moroiti, ngā pūnaha me ngā taputapu mō ngā tono i roto i ngā taiao pāmahana teitei me ngā taiao uaua. Werner, MR & Fahrner, WR 对用于高温和恶劣环境应用的材料、微传感器、系统和设备的评设。 Werner, MR & Fahrner, WR Arotake i ngā rauemi, ngā pūoko moroiti, ngā pūnaha me ngā taputapu mō ngā whakamahinga pāmahana tiketike me te taiao kino.Werner, MR me Farner, WR He tirohanga whānui ki ngā rauemi, ngā pūoko moroiti, ngā pūnaha me ngā taputapu mō ngā tono i ngā pāmahana teitei me ngā āhuatanga uaua.IEEE Trans. Ngā Hikohiko Ahumahi. 48, 249–257 (2001).
Kimoto, T. & Cooper, JA Ngā Kaupapa Taketake o te Hangarau Silicon Carbide Ngā Kaupapa Taketake o te Hangarau Silicon Carbide: Te Tipu, Te Āhuatanga, Ngā Pūrere me Ngā Whakamahinga Vol. Kimoto, T. & Cooper, JA Ngā Kaupapa Taketake o te Hangarau Silicon Carbide Ngā Kaupapa Taketake o te Hangarau Silicon Carbide: Te Tipu, Te Āhuatanga, Ngā Pūrere me Ngā Whakamahinga Vol.Kimoto, T. me Cooper, JA Ngā Kaupapa Taketake o te Hangarau Silicon Carbide Ngā Kaupapa Taketake o te Hangarau Silicon Carbide: Te Tipu, Ngā Āhuatanga, Ngā Pūrere me Ngā Whakamahinga Vol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 Kimoto, T. & Cooper, JA Pūtake hangarau silicon waro Pūtake hangarau silicon waro: tipu, whakaahuatanga, taputapu me te rahinga tono.Kimoto, T. me Cooper, J. Ngā Kaupapa Taketake o te Hangarau Silicon Carbide Ngā Kaupapa Taketake o te Hangarau Silicon Carbide: Te Tipu, Ngā Āhuatanga, Ngā Taputapu me Ngā Whakamahinga Vol.252 (Wiley Singapore Pte Ltd, 2014).
Veliadis, V. Te Hokohoko Nui o te SiC: Te Tūnga o nāianei me ngā Ārai hei Whakakore. kura tuatahi. te pūtaiao. Huinga Kōrero 1062, 125–130 (2022).
Broughton, J., Smet, V., Tummala, RR & Joshi, YK Arotake i ngā hangarau tākai wera mō ngā hikohiko mana motuka mō ngā kaupapa kukume. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Arotake i ngā hangarau tākai wera mō ngā hikohiko mana motuka mō ngā kaupapa kukume.Broughton, J., Smet, V., Tummala, RR me Joshi, YK He tirohanga whānui ki ngā hangarau tākai wera mō ngā hikohiko mana motuka mō ngā kaupapa kukume. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的的汽车电力电子热封装技术的回顾。 Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR me Joshi, YK He tirohanga whānui ki te hangarau tākai wera mō ngā hikohiko mana motuka mō ngā kaupapa kukume.J. Irahiko. Mōkihi. trance. ASME 140, 1-11 (2018).
Sato, K., Kato, H. & Fukushima, T. Te whakawhanaketanga o te pūnaha kukume SiC mō ngā tereina tere Shinkansen o te whakatipuranga e whai ake nei. Sato, K., Kato, H. & Fukushima, T. Te whakawhanaketanga o te pūnaha kukume SiC mō ngā tereina tere Shinkansen o te whakatipuranga e whai ake nei.Sato K., Kato H. me Fukushima T. Te whakawhanaketanga o tētahi pūnaha kukume SiC kua whakamahia mō ngā tereina Shinkansen tere-nui o te whakatupuranga e whai ake nei.Sato K., Kato H. me Fukushima T. Te Whakawhanaketanga o te Pūnaha Kume mō ngā Tono SiC mō ngā Tereina Shinkansen Tere-Tiketike o te Reanga e Whai Ake Nei. Tāpiritanga IEEJ J. Ind. 9, 453–459 (2020).
Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Ngā wero ki te whakatinana i ngā taputapu hiko SiC tino pono: Mai i te āhua o nāianei me ngā take o ngā papa SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Ngā wero ki te whakatinana i ngā taputapu hiko SiC tino pono: Mai i te āhua o nāianei me ngā take o ngā papa SiC.Senzaki, J., Hayashi, S., Yonezawa, Y. me Okumura, H. Ngā raruraru i roto i te whakatinanatanga o ngā taputapu hiko SiC tino pono: mai i te āhua o nāianei me te raruraru o te SiC papatahi. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. 实现高可靠性SiC 功率器件的挑战：从SiC 晶圆的现状和问题。 Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Ko te wero ki te whakatutuki i te tino pono i roto i nga taputapu hiko SiC: mai i te SiC 晶圆的电视和问题设计。Senzaki J, Hayashi S, Yonezawa Y. me Okumura H. Ngā wero i roto i te whanaketanga o ngā taputapu hiko pono-tiketike i runga i te silicon carbide: he arotake i te tūnga me ngā raruraru e pā ana ki ngā anga silicon carbide.I te Huihuinga ā-Ao IEEE mō te Ahupūngao Pono (IRPS) o te tau 2018. (Senzaki, J. et al. eds.) 3B.3-1-3B.3-6 (IEEE, 2018).
Kim, D. & Sung, W. Te pakari o te ara-poto kua whakapaitia mō te 1.2kV 4H-SiC MOSFET mā te whakamahi i te puna-P hohonu i whakatinanahia mā te whakaurunga hongere. Kim, D. & Sung, W. Te pakari o te ara-poto kua whakapaitia mō te 1.2kV 4H-SiC MOSFET mā te whakamahi i te puna-P hohonu i whakatinanahia mā te whakaurunga hongere.Kim, D. me Sung, V. Te ārai i te ara-poto kua whakapaitia mō te MOSFET 1.2 kV 4H-SiC mā te whakamahi i te puna-P hohonu i whakatinanahia mā te whakaurunga hongere. Kim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性。 Kim, D. & Sung, W. P 阱提高了1.2kV 4H-SiC MOSFETKim, D. me Sung, V. Te whakapai ake i te manawanui ara-poto o ngā MOSFET 1.2 kV 4H-SiC mā te whakamahi i ngā puna-P hohonu mā te whakaurunga hongere.Ngā Pūrere Hiko IEEE Reta 42, 1822–1825 (2021).
Skowronski M. et al. Te nekehanga whakarei ake i te whakakotahitanga o ngā hapa i roto i ngā diode pn 4H-SiC kua whakahāngai whakamua. J. Taupānga. ahupūngao. 92, 4699–4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Te tahuritanga o te nekehanga i roto i te epitaxy silicon carbide 4H. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Te tahuritanga o te nekehanga i roto i te epitaxy silicon carbide 4H.Ha S., Meszkowski P., Skowronski M. me Rowland LB Te panonitanga o te nekehanga i te wā epitaxy ana te silicon carbide 4H. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBWhakawhiti nekehanga 4H i roto i te epitaxy silicon carbide.J. Crystal. Te Tipu 244, 257–266 (2002).
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Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Mō te kaha akiaki mō te nekehanga hapa whakarārangi i puta mai i te whakakotahitanga i roto i te 4H–SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Mō te kaha akiaki mō te nekehanga hapa whakarārangi i puta mai i te whakakotahitanga i roto i te 4H-SiC.Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, me Hobart, KD Mō te kaha akiaki o te nekehanga hapa whakarārangi i puta mai i te whakakotahitanga i roto i te 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力。 Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, me Hobart, KD, Mō te kaha akiaki o te nekehanga hapa whakarārangi i puta mai i te whakakotahitanga i roto i te 4H-SiC.J. Taupānga. ahupūngao. 108, 044503 (2010).
Iijima, A. & Kimoto, T. Tauira pūngao hiko mō te hanganga hapa tāpae Shockley kotahi i roto i ngā tioata 4H-SiC. Iijima, A. & Kimoto, T. Tauira pūngao hiko mō te hanganga hapa tāpae Shockley kotahi i roto i ngā tioata 4H-SiC.Iijima, A. me Kimoto, T. Tauira pūngao-irahiko mō te hanganga o ngā hapa takitahi o te tākai Shockley i roto i ngā tioata 4H-SiC. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型。 Iijima, A. & Kimoto, T. Tauira pūngao hiko o te hanganga hapa tāpae Shockley kotahi i roto i te tioata 4H-SiC.Iijima, A. me Kimoto, T. Tauira pūngao-irahiko mō te hanganga o te takai Shockley hapa kotahi i roto i ngā tioata 4H-SiC.J. Taupānga. ahupūngao 126, 105703 (2019).
Iijima, A. & Kimoto, T. Te aromatawai i te āhua tino nui mō te whakawhanui/te whakahekenga o ngā hapa tāpae Shockley takitahi i roto i ngā diode PiN 4H-SiC. Iijima, A. & Kimoto, T. Te aromatawai i te āhua tino nui mō te whakawhanui/te whakahekenga o ngā hapa tāpae Shockley takitahi i roto i ngā diode PiN 4H-SiC.Iijima, A. me Kimoto, T. Te aromatawai i te āhua matua mō te whakawhanui/te pēhitanga o ngā hapa tākai Shockley takitahi i roto i ngā diode PiN 4H-SiC. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件。 Iijima, A. & Kimoto, T. Te aromatawai i ngā āhuatanga whakawhānui/whakaiti o te paparanga whakarārangi Shockley kotahi i roto i ngā taio 4H-SiC PiN.Iijima, A. me Kimoto, T. Te aromatawai i ngā āhuatanga tino nui mō te whakawhanui/te pēhanga o te Shockley tākai hapa kotahi i roto i ngā diode PiN 4H-SiC.te tono ahupūngao Wright. 116, 092105 (2020).
Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Tauira mahi puna kuantum mō te hanganga o tētahi hapa tāpae Shockley kotahi i roto i tētahi karaihe 4H-SiC i raro i ngā āhuatanga kore-taurite. Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Tauira mahi puna kuantum mō te hanganga o tētahi hapa tāpae Shockley kotahi i roto i tētahi karaihe 4H-SiC i raro i ngā āhuatanga kore-taurite.Mannen Y., Shimada K., Asada K., me Otani N. He tauira puna matū mō te hanganga o tētahi hapa tāpae Shockley kotahi i roto i tētahi tioata 4H-SiC i raro i ngā āhuatanga kore-taurite.Mannen Y., Shimada K., Asada K. me Otani N. Tauira taunekeneke puna kuantum mō te hanganga o ngā hapa tāpae Shockley takitahi i roto i ngā tioata 4H-SiC i raro i ngā āhuatanga kore taurite. J. Application. physics. 125, 085705 (2019).
Galeckas, A., Linnros, J. & Pirouz, P. Ngā hapa whakarārangi i puta mai i te whakakotahitanga: Ngā taunakitanga mō tētahi tikanga whānui i roto i te SiC hexagonal. Galeckas, A., Linnros, J. & Pirouz, P. Ngā hapa whakarārangi i puta mai i te whakakotahitanga: Ngā taunakitanga mō tētahi tikanga whānui i roto i te SiC hexagonal.Galeckas, A., Linnros, J. me Pirouz, P. Ngā Hapa Tākai i Āhuatia e te Whakakotahitanga: Ngā Taunakitanga mō tētahi Tikanga Noa i roto i te SiC Hexagonal. Galeckas, A., Linnros, J. & Pirouz, P. 复合诱导的堆垛层错：六方SiC 中一般机制的证据。 Galeckas, A., Linnros, J. & Pirouz, P. Ngā taunakitanga mō te tikanga whānui o te paparanga whakarārangi whakapūmau hiato: SiC.Galeckas, A., Linnros, J. me Pirouz, P. Ngā Hapa Tākai i Āhuatia e te Whakakotahitanga: Ngā Taunakitanga mō tētahi Tikanga Noa i roto i te SiC Hexagonal.ahupūngao Pastor Wright. 96, 025502 (2006).
Ishikawa, Y., Sudo, M., Yao, Y.-Z., Sugawara, Y. & Kato, M. Te whānui o tētahi hapa tāpae Shockley kotahi i roto i tētahi paparanga epitaxial 4H-SiC (11 2 ¯0) i puta mai i te hihi irahiko.Ishikawa, Y., M. Sudo, Y.-Z te whakamārama hihi.Ishikawa, Y., Sudo M., Y.-Z Hinengaro.Pouaka, Ю., М. Судо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Te mātakitaki i te whakakotahitanga o ngā kaikawe i roto i ngā hapa tāpae Shockley kotahi me ngā nekehanga ā-wāhanga i roto i te 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Te mātakitaki i te whakakotahitanga o ngā kaikawe i roto i ngā hapa tāpae Shockley kotahi me ngā nekehanga ā-wāhanga i roto i te 4H-SiC.Kato M., Katahira S., Itikawa Y., Harada S. me Kimoto T. Te Tirotiro i te Whakakotahitanga Kawe i roto i ngā Koha Tākai Shockley Kotahi me ngā Nekehanga Wāhanga i roto i te 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley 堆垛层错和4H-SiC 部分位错中载流子复合的观察。 Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley stacking stacking和4H-SiC partial 位错中载流子去生的可以。Kato M., Katahira S., Itikawa Y., Harada S. me Kimoto T. Te Tirotiro i te Whakakotahitanga Kawe i roto i ngā Koha Tākai Shockley Kotahi me ngā Nekehanga Wāhanga i roto i te 4H-SiC.J. Taupānga. ahupūngao 124, 095702 (2018).
Kimoto, T. & Watanabe, H. Te hangarau hapa i roto i te hangarau SiC mō ngā taputapu hiko ngaohiko-tiketike. Kimoto, T. & Watanabe, H. Te hangarau hapa i roto i te hangarau SiC mō ngā taputapu hiko ngaohiko-tiketike.Kimoto, T. me Watanabe, H. Te whanaketanga o ngā hapa i roto i te hangarau SiC mō ngā taputapu hiko ngaohiko-tiketike. Kimoto, T. & Watanabe, H. 用于高压功率器件的SiC 技术中的缺陷工程。 Kimoto, T. & Watanabe, H. Te hangarau hapa i roto i te hangarau SiC mō ngā taputapu hiko ngaohiko-tiketike.Kimoto, T. me Watanabe, H. Te whanaketanga o ngā hapa i roto i te hangarau SiC mō ngā taputapu hiko ngaohiko-tiketike.te tono ahupūngao Express 13, 120101 (2020).
Zhang, Z. & Sudarshan, TS Te epitaxy kore-nekehanga papa turanga o te silicon carbide. Zhang, Z. & Sudarshan, TS Te epitaxy kore-nekehanga papa turanga o te silicon carbide.Zhang Z. me Sudarshan TS. Te epitaxy kore-nekehanga o te silicon carbide i te papa turanga. Zhang, Z. & Sudarshan, TS 碳化硅基面无位错外延。 Zhang, Z. & Sudarshan, TSZhang Z. me Sudarshan TS. Te epitaxy kore-nekehanga o ngā papa turanga silicon carbide.tauākī. ahupūngao. Wright. 87, 151913 (2005).
Zhang, Z., Moulton, E. & Sudarshan, TS Tikanga mō te whakakore i ngā nekehanga papa turanga i roto i ngā kiriata angiangi SiC mā te epitaxy i runga i tētahi papa kua whakairohia. Zhang, Z., Moulton, E. & Sudarshan, TS Tikanga mō te whakakore i ngā nekehanga papa turanga i roto i ngā kiriata angiangi SiC mā te epitaxy i runga i tētahi papa kua whakairohia.Zhang Z., Moulton E. me Sudarshan TS Tikanga whakakore i ngā nekehanga papa turanga i roto i ngā kiriata angiangi SiC mā te epitaxy i runga i te papa kua whakairohia. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制。 Zhang, Z., Moulton, E. & Sudarshan, TS Te tikanga o te whakakore i te kiriata angiangi SiC mā te whakairo i te papa.Zhang Z., Moulton E. me Sudarshan TS Tikanga whakakore i ngā nekehanga papa turanga i roto i ngā kiriata angiangi SiC mā te epitaxy i runga i ngā papa kua whakairohia.te tono ahupūngao Wright. 89, 081910 (2006).
Nā te aukati i te tipu ka heke te nekehanga o te papa turanga i te wā o te epitaxy 4H-SiC. tauākī. ahupūngao. Wright. 94, 041916 (2009).
Zhang, X. & Tsuchida, H. Te hurihanga o ngā nekehanga papa turanga ki ngā nekehanga taha miro i roto i ngā paparanga epi 4H-SiC mā te whakamahana pāmahana teitei. Zhang, X. & Tsuchida, H. Te hurihanga o ngā nekehanga papa turanga ki ngā nekehanga taha miro i roto i ngā paparanga epi 4H-SiC mā te whakamahana pāmahana teitei.Zhang, X. me Tsuchida, H. Te whakarerekētanga o ngā nekehanga papa turanga ki ngā nekehanga taha miro i roto i ngā paparanga epitaxial 4H-SiC mā te whakamahana pāmahana teitei. Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiC 外延层中的基面位错转化为螺纹刃位错。 Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiCZhang, X. me Tsuchida, H. Te whakarerekētanga o ngā nekehanga papa turanga ki ngā nekehanga taha miro i roto i ngā paparanga epitaxial 4H-SiC mā te whakamahana pāmahana teitei.J. Taupānga. ahupūngao. 111, 123512 (2012).
Song, H. & Sudarshan, TS Te huringa nekehanga papa turanga tata ki te atanga epilayer/papa i roto i te tipu epitaxial o te 4H–SiC i waho o te tuaka 4°. Song, H. & Sudarshan, TS Te huringa nekehanga papa turanga tata ki te atanga epilayer/papa i roto i te tipu epitaxial o te 4H–SiC i waho o te tuaka 4°.Song, H. me Sudarshan, TS Te whakarerekētanga o ngā nekehanga papa turanga tata ki te atanga paparanga epitaxial/papa i te wā e tipu ana te 4H–SiC i waho o te tuaka. Waiata, H. & Sudarshan, TS 在4° 离轴4H-SiC 外延生长中外延层/衬底界面附近的基底平面位错转换位错转捯。 Waiata, H. & Sudarshan, TS 在4° 离轴4H-SiC Song, H. & Sudarshan, TSTe whakawhiti nekehanga papatahi o te papa e tata ana ki te rohe paparanga epitaxial/papa i te wā e tipu ana te 4H-SiC i waho o te tuaka 4°.J. Crystal. Te Tipu 371, 94–101 (2013).
Konishi, K. et al. I te au nui, ka huri te horapa o te hapa whakarārangi i te papa turanga i roto i ngā paparanga epitaxial 4H-SiC hei ngā nekehanga taha miro. J. Application. physics. 114, 014504 (2013).
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Tahara, T. et al. Te whakawhirinakitanga o te kukū kawe i werohia ki te horapa hapa tāpae Shockley kotahi i roto i ngā diode PiN 4H-SiC. J. Application. Physics 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Pūnaha FCA mōroiti mō te ine i te roanga o te oranga o te kaikawe kua whakatauhia te hohonu i roto i te SiC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Pūnaha FCA mōroiti mō te ine i te roanga o te oranga o te kaikawe kua whakatauhia te hohonu i roto i te SiC.Mei, S., Tawara, T., Tsuchida, H. me Kato, M. Pūnaha Makariri FCA mō ngā Inenga o te Ao Kaikawe i Whakatauhia e te Hōhonutanga i roto i te Silicon Carbide. Mae, S.、Tawara, T.、Tsuchida, H. & Kato, M. 用于SiC 中深度分辨载流子寿命测量的显微FCA 系统。 Mae, S.、Tawara, T.、Tsuchida, H. & Kato, M. Mo te SiC waenga-hohonu 分辨载流子 inenga ora的月微FCA system。Mei S., Tawara T., Tsuchida H. me Kato M. Pūnaha moroiti-FCA mō ngā inenga roa o te roanga o te kawe i roto i te waro hiko.Huinga Pūtaiao o te Kura Tuarua 924, 269–272 (2018).
Hirayama, T. et al. I inehia te tohatoha hohonu o ngā roanga o te oranga o ngā kaikawe i roto i ngā paparanga epitaxial 4H-SiC matotoru mā te kore-whakangaro mā te whakamahi i te whakataunga wā o te mimiti kaikawe kore utu me te mārama whiti. Switch to science. mita. 91, 123902 (2020).
Wā tuku: Whiringa-ā-rangi-06-2022
