Mbelata mgbasa nke nsogbu n'ime diodes 4H-SiC PiN site na iji proton implantation iji wepụ mbibi bipolar

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A na-ere 4H-SiC dịka ihe eji arụ ọrụ maka ngwaọrụ semiconductor ike. Agbanyeghị, ntụkwasị obi ogologo oge nke ngwaọrụ 4H-SiC bụ ihe mgbochi maka ojiji ha sara mbara, nsogbu ntụkwasị obi kachasị mkpa nke ngwaọrụ 4H-SiC bụ mmebi bipolar. Mmebi a na-akpata site na otu Shockley stacking fault (1SSF) nke mgbasa nke basal plane dislocations na kristal 4H-SiC. N'ebe a, anyị na-atụ aro ụzọ maka igbochi mgbasawanye 1SSF site na itinye protons na wafers epitaxial 4H-SiC. PiN diodes e mere na wafers nwere proton implantation gosipụtara otu njirimara voltaji ugbu a dị ka diodes na-enweghị proton implantation. N'ụzọ dị iche, a na-egbochi mgbasawanye 1SSF nke ọma na diode PiN nke proton etinyere. Ya mere, itinye protons na wafers epitaxial 4H-SiC bụ ụzọ dị irè maka igbochi mbibi bipolar nke ngwaọrụ semiconductor ike 4H-SiC ebe ọ na-ejigide arụmọrụ ngwaọrụ. Nsonaazụ a na-enye aka na mmepe nke ngwaọrụ 4H-SiC a pụrụ ịtụkwasị obi nke ukwuu.
A maara silicon carbide (SiC) nke ọma dị ka ihe semiconductor maka ngwaọrụ semiconductor dị elu, nke nwere ike ịrụ ọrụ n'ebe siri ike1. E nwere ọtụtụ ụdị SiC, nke gụnyere 4H-SiC nwere njirimara anụ ahụ dị mma nke ngwaọrụ semiconductor dị ka nnukwu ngagharị elektrọn na ike mgbawa field eletriki2. A na-ere wafers 4H-SiC nwere dayameta nke sentimita isii ugbu a ma jiri ya mee ihe maka mmepụta nke ngwaọrụ semiconductor ike3. Ejiri ngwaọrụ semiconductor ike 4H-SiC4.5 rụọ sistemụ traction maka ụgbọ ala eletrik na ụgbọ oloko. Agbanyeghị, ngwaọrụ 4H-SiC ka na-enwe nsogbu ntụkwasị obi ogologo oge dịka mmebi dielectric ma ọ bụ ntụkwasị obi sekit dị mkpụmkpụ, 6,7 nke otu n'ime nsogbu ntụkwasị obi kachasị mkpa bụ mmebi bipolar2,8,9,10,11. A chọpụtara mmebi bipolar a ihe karịrị afọ 20 gara aga ma ọ bụ ogologo oge abụrụla nsogbu na mmepụta ngwaọrụ SiC.
Mbibi nke bipolar na-akpata site na otu ntụpọ Shockley stack (1SSF) na kristal 4H-SiC nwere dislocations basal plane (BPDs) na-agbasa site na recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Ya mere, ọ bụrụ na a kwụsị mgbasa BPD na 1SSF, enwere ike imepụta ngwaọrụ ike 4H-SiC na-enweghị mbibi bipolar. Akọpụtala ọtụtụ ụzọ iji gbochie mgbasa BPD, dị ka BPD na Thread Edge Dislocation (TED) transformation 20,21,22,23,24. Na wafers epitaxial SiC kachasị ọhụrụ, BPD dị na substrate ọ bụghị na epitaxial layer n'ihi mgbanwe nke BPD na TED n'oge mbido nke uto epitaxial. Ya mere, nsogbu fọdụrụ nke mbibi bipolar bụ nkesa nke BPD na substrate 25,26,27. A tụpụtala itinye "oyi akwa nkwado ihe mejupụtara" n'etiti oyi akwa ndọda na substrate dị ka ụzọ dị irè maka igbochi mgbasawanye BPD na substrate28, 29, 30, 31. Oyi akwa a na-eme ka ohere nke njikọta nke electron-hole pair na oyi akwa epitaxial na substrate SiC dịkwuo elu. Ibelata ọnụọgụ nke ụzọ abụọ electron-hole na-ebelata ike ịnya isi nke REDG na BPD na substrate ahụ, yabụ oyi akwa nkwado ihe mejupụtara nwere ike igbochi mbibi bipolar. Ọ dị mkpa ịmara na itinye oyi akwa na-agụnye ụgwọ ndị ọzọ na mmepụta nke wafers, na-enweghị itinye oyi akwa ọ na-esiri ike ibelata ọnụọgụ nke ụzọ abụọ electron-hole site na ijikwa naanị njikwa nke ndụ onye na-ebu ya. Ya mere, ọ ka dị mkpa ịmepụta ụzọ mgbochi ndị ọzọ iji nweta nguzozi ka mma n'etiti ọnụ ahịa nrụpụta ngwaọrụ na mkpụrụ.
Ebe ọ bụ na ịgbatị BPD gaa na 1SSF chọrọ mmegharị nke akụkụ nke dislocations (PDs), ịpịnye PD bụ ụzọ dị mma iji gbochie mbibi bipolar. Ọ bụ ezie na akọpụtala njikọ PD site na ihe adịghị ọcha ígwè, FPDs dị na substrates 4H-SiC dị n'ebe dị anya karịa 5 μm site na elu nke oyi akwa epitaxial. Na mgbakwunye, ebe ọ bụ na ọnụọgụ mgbasa nke ígwè ọ bụla dị na SiC dị obere, ọ na-esiri ike maka adịghị ọcha ígwè ịgbasa na substrate34. N'ihi nnukwu oke atọm nke ígwè, itinye ion nke ígwè dịkwa ike. N'ụzọ dị iche, n'ihe gbasara hydrogen, ihe kachasị mfe, enwere ike itinye ions (protons) na 4H-SiC ruo omimi karịa 10 µm site na iji ngwa ngwa MeV-klas. Ya mere, ọ bụrụ na ntinye proton metụtara ntinye PD, mgbe ahụ enwere ike iji ya gbochie mgbasa BPD na substrate. Agbanyeghị, ntinye proton nwere ike imebi 4H-SiC ma mee ka arụmọrụ ngwaọrụ belata37,38,39,40.
Iji merie mmebi ngwaọrụ n'ihi ntinye proton, a na-eji annealing okpomọkụ dị elu arụzi mmebi ahụ, dịka usoro annealing a na-ejikarị eme ihe mgbe etinyere ion nnabata na nhazi ngwaọrụ1, 40, 41, 42. Ọ bụ ezie na spectrometry nke abụọ nke ion mass spectrometry (SIMS)43 akọpụtala mgbasa hydrogen n'ihi annealing okpomọkụ dị elu, o kwere omume na naanị njupụta nke atọm hydrogen dị nso na FD ezughị iji chọpụta pinning nke PR site na iji SIMS. Ya mere, na ọmụmụ ihe a, anyị tinyere protons n'ime wafers epitaxial 4H-SiC tupu usoro mmepụta ngwaọrụ ahụ, gụnyere annealing okpomọkụ dị elu. Anyị jiri PiN diodes dị ka nhazi ngwaọrụ nnwale ma rụpụta ha na wafers epitaxial 4H-SiC nke proton etinyere. Anyị wee hụ njirimara volt-ampere iji mụọ mmebi nke arụmọrụ ngwaọrụ n'ihi ntinye proton. Mgbe nke ahụ gasịrị, anyị hụrụ mmụba nke 1SSF na onyonyo electroluminescence (EL) mgbe etinyere voltaji eletriki na diode PiN. N'ikpeazụ, anyị kwadoro mmetụta nke ọgwụ proton nwere na mgbochi nke mgbasawanye 1SSF.
Na eserese nke 1, eserese nke 1 na-egosi njirimara ugbu a-voltaji (CVCs) nke diodes PiN na okpomọkụ ụlọ na mpaghara nwere na enweghị proton installation tupu pulsed current. PiN diodes nwere proton injection na-egosi njirimara ndozi yiri diodes na-enweghị proton injection, ọbụlagodi na njirimara IV na-ekerịta n'etiti diodes. Iji gosi ọdịiche dị n'etiti ọnọdụ injection, anyị sere ugboro voltaji na njupụta ugbu a na-aga n'ihu nke 2.5 A/cm2 (dabara na 100 mA) dị ka atụmatụ ọnụọgụgụ dịka egosiri na eserese nke 2. A na-egosipụtakwa usoro nkesa nkịtị site na ahịrị akara ntụpọ. Dịka a pụrụ ịhụ site na elu nke usoro ahụ, nguzogide na-abawanye ntakịrị na doses proton nke 1014 na 1016 cm-2, ebe diodes PiN nwere dose proton nke 1012 cm-2 na-egosi ihe fọrọ nke nta ka ọ bụrụ otu njirimara dị ka na-enweghị proton injection. Anyị mekwara proton kụnye ya mgbe anyị rụchara PiN diodes nke na-egosighi otu electroluminescence n'ihi mmebi nke proton kụnye ya dịka egosiri na Foto S1 dịka akọwara na ọmụmụ ihe ndị gara aga37,38,39. Ya mere, ịkụnye ya na 1600 °C mgbe etinyere Al ions n'ime ya bụ usoro dị mkpa iji mepụta ngwaọrụ iji mee ka Al acceptor rụọ ọrụ, nke nwere ike idozi mmebi nke proton kụnye ya, nke na-eme ka CVCs bụrụ otu ihe ahụ n'etiti proton PiN diodes ndị etinyere na ndị na-abụghị nke etinyere. E gosipụtakwara ugboro ugboro nke mgbanwe ugbu a na -5 V na Foto S2, enweghị nnukwu ọdịiche dị n'etiti diodes nwere na enweghị proton injection.
Àgwà volt-ampere nke PiN diode nwere na enweghị protons a gbanyere n'ime ya n'ọnọdụ okpomọkụ ụlọ. Akụkọ ahụ na-egosi oke protons.
Ugboro voltaji na ọkụ eletrik kpọmkwem 2.5 A/cm2 maka diode PiN nwere protons a gbanyere na ndị a na-agbaghị. Ahịrị ntụpọ ahụ kwekọrọ na nkesa nkịtị.
Na eserese nke 3 na-egosi onyonyo EL nke diode PiN nwere njupụta ugbu a nke 25 A/cm2 mgbe voltaji gasịrị. Tupu e jiri ibu ọkụ eletrik eme ihe, a hụghị mpaghara gbara ọchịchịrị nke diode ahụ, dịka egosiri na eserese nke 3. C2. Agbanyeghị, dịka egosiri na eserese nke 3a, na diode PiN na-enweghị proton etinyere, a hụrụ ọtụtụ mpaghara gbara ọchịchịrị nwere nsọtụ ìhè mgbe e tinyere voltaji eletrik. A na-ahụ mpaghara gbara ọchịchịrị dị ka mkpanaka na onyonyo EL maka 1SSF nke sitere na BPD na substrate28,29. Kama nke ahụ, a hụrụ ụfọdụ ntụpọ njupụta ogologo na diode PiN nwere proton etinyere, dịka egosiri na eserese nke 3b–d. Site na iji X-ray topography, anyị kwadoro na enwere PRs nke nwere ike ịkwaga site na BPD gaa na substrate na mpụta nke kọntaktị na PiN diode na-enweghị proton injection (Foto 4: onyonyo a na-ewepụghị electrode dị n'elu (foto, PR n'okpuru electrodes adịghị ahụ anya). Ya mere, mpaghara gbara ọchịchịrị na onyonyo EL kwekọrọ na 1SSF BPD agbatịkwuru na substrate ahụ. E gosiri onyonyo EL nke diode PiN ndị ọzọ ebugoro na Foto 1 na 2. Vidiyo S3-S6 nwere na enweghị mpaghara gbara ọchịchịrị agbatịkwuru (foto EL nke diode PiN na-enweghị proton injection ma tinye ya na 1014 cm-2) egosikwara na Ozi Mgbakwunye.
Foto EL nke PiN diode na 25 A/cm2 mgbe awa abụọ nke nrụgide eletriki gasịrị (a) na-enweghị proton etinyere na yana doses nke (b) 1012 cm-2, (c) 1014 cm-2 na (d) 1016 cm-2 protons.
Anyị gbakọrọ njupụta nke 1SSF gbasaara site na ịgbakọ ebe gbara ọchịchịrị nwere nsọtụ na-egbuke egbuke na diode PiN atọ maka ọnọdụ ọ bụla, dịka egosiri na Foto 5. Njupụta nke 1SSF gbasaara na-ebelata ka ọnụego proton na-abawanye, ọbụlagodi na dose nke 1012 cm-2, njupụta nke 1SSF gbasaara dị obere nke ukwuu karịa na diode PiN na-abụghị nke etinyere.
Mmụba nke diodes SF PiN na-etinye proton na enweghị ya mgbe etinyere ya na ọkụ eletrik (ọnọdụ ọ bụla gụnyere diodes atọ ebugoro).
Mbelata ndụ onye na-ebu ibu na-emetụtakwa mgbasawanye, yana ntụtụ proton na-ebelata ndụ onye na-ebu ibu32,36. Anyị ahụla ndụ onye na-ebu ibu n'ime oyi akwa epitaxial nke 60 µm nwere protons a gbanyere agba nke 1014 cm-2. Site na ndụ onye na-ebu ibu mbụ, ọ bụ ezie na ihe a gbanyere agba na-ebelata uru ruo ~10%, nrụgharị na-esote na-eme ka ọ dịghachi ruo ~50%, dịka egosiri na Fig. S7. Ya mere, ndụ onye na-ebu ibu, nke belatara n'ihi nrụgharị proton, na-eweghachi site na nrụgharị okpomọkụ dị elu. Ọ bụ ezie na mbelata 50% na ndụ onye na-ebu ibu na-egbochikwa mgbasa nke ntụpọ nrụgharị, njirimara I-V, nke na-adaberekarị na ndụ onye na-ebu ibu, na-egosi naanị obere ọdịiche dị n'etiti diode ndị a gbanyere agba na ndị na-abụghị nke a gbanyere agba. Ya mere, anyị kwenyere na nrụgharị PD na-arụ ọrụ n'igbochi mgbasawanye 1SSF.
Ọ bụ ezie na SIMS achọpụtaghị hydrogen mgbe a gbasasịrị ya na 1600°C, dịka akọwara n'ọmụmụ ihe ndị gara aga, anyị hụrụ mmetụta nke ntinye proton na mgbochi nke mgbasawanye 1SSF, dịka egosiri na Foto 1 na 4. 3, 4. Ya mere, anyị kwenyere na atọm hydrogen nwere njupụta dị n'okpuru oke nchọpụta nke SIMS (2 × 1016 cm-3) ma ọ bụ ntụpọ isi nke etinyere n'ime ya kpatara PD. Ọ dị mkpa ịmara na anyị ekwenyebeghị mmụba na nguzogide on-state n'ihi ogologo nke 1SSF mgbe ibu ọkụ eletrik gasịrị. Nke a nwere ike ịbụ n'ihi kọntaktị ohmic na-ezughị oke emere site na iji usoro anyị, nke a ga-ewepụ n'ọdịnihu dị nso.
Na mmechi, anyị mepụtara usoro ịgbanyụ ọkụ maka ịgbatị BPD ruo 1SSF na diodes 4H-SiC PiN site na iji proton installation tupu emepụta ngwaọrụ. Mmebi nke njirimara I-V n'oge ntinye proton abụghị ihe dị mkpa, ọkachasị na dose proton nke 1012 cm–2, mana mmetụta nke igbochi mgbasawanye 1SSF dị oke mkpa. Ọ bụ ezie na n'ọmụmụ ihe a, anyị mepụtara diodes PiN 10 µm dị arọ na ntinye proton ruo omimi nke 10 µm, ọ ka nwere ike ime ka ọnọdụ ntinye dịkwuo mma ma tinye ha iji mepụta ụdị ngwaọrụ 4H-SiC ndị ọzọ. A ga-atụle ụgwọ ndị ọzọ maka imepụta ngwaọrụ n'oge ntinye proton, mana ha ga-adị ka nke maka ntinye aluminom ion, nke bụ usoro mmepụta bụ isi maka ngwaọrụ ike 4H-SiC. Ya mere, ntinye proton tupu nhazi ngwaọrụ bụ ụzọ enwere ike isi mepụta ngwaọrụ ike bipolar 4H-SiC na-enweghị mmebi.
E jiri wafer n-ụdị 4H-SiC nke dị sentimita 4 nke nwere ọkpụrụkpụ oyi akwa epitaxial nke 10 µm na ntinye doping nke onye nyere ya nke 1 × 1016 cm–3 dị ka ihe nlele. Tupu a na-ahazi ngwaọrụ ahụ, etinyere ion H+ n'ime efere ahụ na ike ngwa ngwa nke 0.95 MeV na okpomọkụ ụlọ ruo omimi nke ihe dị ka 10 μm n'akụkụ nkịtị na elu efere ahụ. N'oge a na-etinye proton, e jiri ihe mkpuchi ihu na efere, efere ahụ nwekwara akụkụ na-enweghị ya na dose proton nke 1012, 1014, ma ọ bụ 1016 cm-2. Mgbe ahụ, etinyere ion Al nwere dose proton nke 1020 na 1017 cm–3 n'elu wafer ahụ dum ruo omimi nke 0–0.2 µm na 0.2–0.5 µm site na elu ahụ, wee jiri annealing na 1600°C mepụta mkpuchi carbon iji mepụta oyi akwa ap. -type. Mgbe nke ahụ gasịrị, e tinyere kọntaktị Ni n'azụ n'akụkụ substrate ahụ, ebe e tinyere kọntaktị Ti/Al n'ihu nke dị 2.0 mm × 2.0 mm nke e ji fotolithography mepụta ma tinye usoro ịkpụ n'akụkụ oyi akwa epitaxial. N'ikpeazụ, a na-eme annealing kọntaktị na okpomọkụ nke 700 °C. Mgbe anyị bechara wafer ahụ ka ọ bụrụ ibe, anyị mere njirimara nrụgide na itinye ya n'ọrụ.
A hụrụ njirimara I–V nke diodes PiN e mepụtara site na iji ihe nyocha paramita HP4155B semiconductor. Dịka nrụgide eletriki, ewebatara ọkụ eletrik 10-millisekọnd nke 212.5 A/cm2 ruo awa 2 na ugboro 10 nke pulses/sekọnd. Mgbe anyị họọrọ njupụta ma ọ bụ ugboro ole dị ala nke ugbu a, anyị ahụghị mgbasawanye 1SSF ọbụlagodi na diodes PiN na-enweghị proton injection. N'oge voltaji eletriki etinyere, okpomọkụ nke diodes PiN dị ihe dịka 70°C na-enweghị kpo oku n'uche, dịka egosiri na Foto S8. E nwetara onyonyo electroluminescent tupu na mgbe nrụgide eletriki gasịrị na njupụta ugbu a nke 25 A/cm2. Synchrotron reflection grazing incidence X-ray topography site na iji monochromatic X-ray beam (λ = 0.15 nm) na Aichi Synchrotron Radiation Center, ag vector na BL8S2 bụ -1-128 ma ọ bụ 11-28 (lee ntụaka 44 maka nkọwa ndị ọzọ).
A na-ewepụta ugboro voltaji na njupụta ugbu a nke 2.5 A/cm2 site na oge nke 0.5 V na fig. 2 dịka CVC nke steeti ọ bụla nke diode PiN si dị. Site na uru nkezi nke nrụgide Vave na ọdịiche ọkọlọtọ σ nke nrụgide ahụ, anyị na-ese usoro nkesa nkịtị n'ụdị ahịrị ntụpọ na Fig 2 site na iji nha nha a:
Werner, MR & Fahrner, WR Nyocha gbasara ihe, ihe mmetụta microsensọ, sistemụ na ngwaọrụ maka ojiji okpomọkụ dị elu na gburugburu ebe obibi siri ike. Werner, MR & Fahrner, WR Nyocha gbasara ihe, ihe mmetụta microsensọ, sistemụ na ngwaọrụ maka ojiji okpomọkụ dị elu na gburugburu ebe obibi siri ike.Werner, MR na Farner, WR Nchịkọta nke ihe, microsensors, sistemụ na ngwaọrụ maka ojiji n'ebe okpomọkụ dị elu na gburugburu ebe siri ike. Werner, MR & Fahrner, WR. Werner, MR & Fahrner, WR Nyocha nke ihe, microsensors, sistemụ na ngwaọrụ maka oke okpomọkụ na ojiji gburugburu ebe obibi na-adịghị mma.Werner, MR na Farner, WR Nchịkọta nke ihe, microsensors, sistemụ na ngwaọrụ maka ngwa n'oge okpomọkụ dị elu na ọnọdụ siri ike.IEEE Trans. Ngwaọrụ eletrọniki ụlọ ọrụ. 48, 249–257 (2001).
Kimoto, T. & Cooper, JA Isi ihe dị mkpa gbasara teknụzụ Silicon Carbide Isi ihe dị mkpa gbasara teknụzụ Silicon Carbide: Uto, njirimara, ngwaọrụ na ngwa Mpịakọta. Kimoto, T. & Cooper, JA Isi ihe dị mkpa gbasara teknụzụ Silicon Carbide Isi ihe dị mkpa gbasara teknụzụ Silicon Carbide: Uto, njirimara, ngwaọrụ na ngwa Mpịakọta.Kimoto, T. na Cooper, JA Isi ihe dị mkpa gbasara teknụzụ Silicon Carbide Isi ihe dị mkpa gbasara teknụzụ Silicon Carbide: Uto, njirimara, ngwaọrụ na ngwa Mpịakọta. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 Kimoto, T. & Cooper, JA Isi teknụzụ Carbon化silicon Isi teknụzụ Carbon化silicon: uto, nkọwa, akụrụngwa na olu ngwa.Kimoto, T. na Cooper, J. Isi ihe dị mkpa na teknụzụ Silicon Carbide Isi ihe dị mkpa na teknụzụ Silicon Carbide: Uto, njirimara, akụrụngwa na ojiji Mpịakọta.252 (Wiley Singapore Pte Ltd, 2014).
Veliadis, V. Mgbasa Ozi Ukwu nke SiC: Ọnọdụ Ọkwa na Ihe Mgbochi Ndị A Ga-emeri. alma mater. sayensị. Ogbe 1062, 125–130 (2022).
Broughton, J., Smet, V., Tummala, RR & Joshi, YK Nyocha nke teknụzụ nkwakọ ngwaahịa okpomọkụ maka ngwa eletrọniki ike ụgbọ ala maka ebumnuche ịdọkpụ. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Nyocha nke teknụzụ nkwakọ ngwaahịa okpomọkụ maka ngwa eletrọniki ike ụgbọ ala maka ebumnuche ịdọkpụ.Broughton, J., Smet, V., Tummala, RR na Joshi, YK Nkọwa nke teknụzụ nkwakọ ngwaahịa okpomọkụ maka ngwa eletrọnịkị ike ụgbọ ala maka ebumnuche ịdọkpụ. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的汽车电力电子热封装技术的回顾。 Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR na Joshi, YK Nkọwa nke teknụzụ nkwakọ ngwaahịa okpomọkụ maka ngwa eletrọnịkị ike ụgbọ ala maka ebumnuche ịdọkpụ.J. Electron. Ngwugwu. trance. ASME 140, 1-11 (2018).
Sato, K., Kato, H. & Fukushima, T. Mmepe nke sistemụ traction SiC etinyere maka ụgbọ oloko Shinkansen dị elu nke ọgbọ na-abịa. Sato, K., Kato, H. & Fukushima, T. Mmepe nke sistemụ traction SiC etinyere maka ụgbọ oloko Shinkansen dị elu nke ọgbọ na-abịa.Sato K., Kato H. na Fukushima T. Mmepe nke sistemụ traction SiC etinyere maka ụgbọ oloko Shinkansen dị elu nke ọgbọ na-abịa.Sato K., Kato H. na Fukushima T. Mmepe Sistemụ Traction maka Ngwa SiC maka Ọgbọ Na-esote Ụgbọ oloko Shinkansen dị elu. Mgbakwunye IEEJ J. Ind. 9, 453–459 (2020).
Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Ihe ịma aka iji nweta ngwaọrụ ike SiC a pụrụ ịtụkwasị obi nke ukwuu: Site na ọnọdụ dị ugbu a na nsogbu nke wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Ihe ịma aka iji nweta ngwaọrụ ike SiC a pụrụ ịtụkwasị obi nke ukwuu: Site na ọnọdụ dị ugbu a na nsogbu nke wafer SiC.Senzaki, J., Hayashi, S., Yonezawa, Y. na Okumura, H. Nsogbu dị na mmejuputa ngwaọrụ ike SiC a pụrụ ịtụkwasị obi nke ukwuu: malite na ọnọdụ dị ugbu a na nsogbu nke wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Ihe ịma aka nke inweta ntụkwasị obi dị elu na ngwaọrụ ike SiC: site na SiC 晶圆的电视和问题设计。Senzaki J, Hayashi S, Yonezawa Y. na Okumura H. Ihe ịma aka dị na mmepe nke ngwaọrụ ike a pụrụ ịtụkwasị obi nke dabere na silicon carbide: nyocha nke ọnọdụ na nsogbu ndị metụtara wafer silicon carbide.Na Mgbakọ Mba Nile nke IEEE nke 2018 gbasara Physics Ntụkwasị Obi (IRPS). (Senzaki, J. et al. edits.) 3B.3-1-3B.3-6 (IEEE, 2018).
Kim, D. & Sung, W. Emelitere ike mkpụmkpụ maka 1.2kV 4H-SiC MOSFET site na iji olulu mmiri miri emi nke P etinyere site na ịtinye ya. Kim, D. & Sung, W. Emelitere ike mkpụmkpụ maka 1.2kV 4H-SiC MOSFET site na iji olulu mmiri miri emi nke P etinyere site na ịtinye ya.Kim, D. na Sung, V. Emelitere mgbochi mkpụmkpụ maka 1.2 kV 4H-SiC MOSFET site na iji olulu mmiri miri emi nke P nke etinyere site na ntinye ọwa. Kim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性。 Kim, D. & Sung, W.P 阱提高了1.2kV 4H-SiC MOSFETKim, D. na Sung, V. Mmeziwanye ntachi obi mkpụmkpụ nke 1.2 kV 4H-SiC MOSFETs site na iji olulu mmiri miri emi nke P site na itinye ọwa.Akwụkwọ ikike ngwaọrụ eletrọniki nke IEEE 42, 1822–1825 (2021).
Skowronski M. na ndị ọzọ. Mmegharị nke ntụpọ ndị dị na diode pn 4H-SiC nke nwere echiche na-ezighi ezi n'ihu. J. Ngwa. physics. 92, 4699–4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. na Rowland, LB Mgbanwe nke dislocation na 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. na Rowland, LB Mgbanwe nke dislocation na 4H silicon carbide epitaxy.Ha S., Meszkowski P., Skowronski M. na Rowland LB Mgbanwe nke mgbanwe n'oge epitaxy silicon carbide 4H. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBMgbanwe nke mgbanwe 4H na silicon carbide epitaxy.J. Crystal. Uto 244, 257–266 (2002).
Skowronski, M. & Ha, S. Mmebi nke ngwaọrụ bipolar nke dabere na silicon-carbide nke hexagonal. Skowronski, M. & Ha, S. Mmebi nke ngwaọrụ bipolar nke dabere na silicon-carbide nke hexagonal.Skowronski M. na Ha S. Mmebi nke ngwaọrụ bipolar hexagonal dabere na silicon carbide. Skowronski, M. & Ha, S. 六方碳化硅基双极器件的降解。 Skowronski M. na Ha S.Skowronski M. na Ha S. Mmebi nke ngwaọrụ bipolar hexagonal dabere na silicon carbide.J. Ngwa. physics 99, 011101 (2006).
Agarwal, A., Fatima, H., Haney, S. na Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. na Ryu, S.-H.Agarwal A., Fatima H., Heini S. na Ryu S.-H. Agarwal, A., Fatima, H., Haney, S. na Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. na Ryu, S.-H.Agarwal A., Fatima H., Heini S. na Ryu S.-H.Usoro mmebi ọhụrụ maka ike SiC dị elu MOSFETs. IEEE Electronic Devices Lett. 28, 587–589 (2007).
Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Na ike mkpali maka mmegharị nsogbu nke njikọta nke na-akpata na 4H–SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Na ike mkpali maka mmegharị nsogbu nke njikọta nke 4H-SiC kpatara.Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, na Hobart, KD Banyere ike mkpali nke mmegharị nsogbu nke njikọta na-akpata na 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力。 Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, na Hobart, KD, Banyere ike mkpali nke mmegharị nsogbu nke njikọta nke na-akpata na 4H-SiC.J. Ngwa. physics. 108, 044503 (2010).
Iijima, A. & Kimoto, T. Ụdị ike eletrọniki maka otu Shockley stacking frail formation na kristal 4H-SiC. Iijima, A. & Kimoto, T. Ụdị ike eletrọniki maka otu Shockley stacking frail formation na kristal 4H-SiC.Iijima, A. na Kimoto, T. Ụdị ike Electron nke nhazi nke otu ntụpọ nke ngwugwu Shockley na kristal 4H-SiC. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型。 Iijima, A. & Kimoto, T. Ụdị ike eletrọniki nke otu Shockley stacking fault formation na kristal 4H-SiC.Iijima, A. na Kimoto, T. Ụdị ike Electron nke nhazi nke otu ntụpọ Shockley na kristal 4H-SiC.J. Ngwa. physics 126, 105703 (2019).
Iijima, A. & Kimoto, T. Atụmatụ nke ọnọdụ dị oke mkpa maka mgbasawanye/mgbatị nke nsogbu Shockley stacking otu na diode 4H-SiC PiN. Iijima, A. & Kimoto, T. Atụmatụ nke ọnọdụ dị oke mkpa maka mgbasawanye/mgbatị nke nsogbu Shockley stacking otu na diode 4H-SiC PiN.Iijima, A. na Kimoto, T. Atụmatụ nke ọnọdụ dị mkpa maka mgbasawanye/mkpakọ nke otu ntụpọ ngwugwu Shockley na 4H-SiC PiN-diodes. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件。 Iijima, A. & Kimoto, T. Atụmatụ nke ọnọdụ mgbasa/mgbatị oyi akwa Shockley stacking na diode PiN 4H-SiC.Iijima, A. na Kimoto, T. Atụmatụ nke ọnọdụ dị mkpa maka mgbasawanye/mkpakọ nke ngwugwu ntụpọ otu Shockley na 4H-SiC PiN-diodes.Ngwa physics Wright. 116, 092105 (2020).
Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Ụdị ihe nlereanya nke ebe a na-eme ka ọ dị mma maka ịmepụta otu nsogbu Shockley stacking na kristal 4H-SiC n'okpuru ọnọdụ ndị na-adịghị mma. Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Ụdị ihe nlereanya nke ebe a na-eme ka ọ dị mma maka ịmepụta otu nsogbu Shockley stacking na kristal 4H-SiC n'okpuru ọnọdụ ndị na-adịghị mma.Mannen Y., Shimada K., Asada K., na Otani N. Ihe nlereanya olulu mmiri quantum maka ịmepụta otu nsogbu Shockley stacking na kristal 4H-SiC n'okpuru ọnọdụ enweghị nhata.Mannen Y., Shimada K., Asada K. na Otani N. Ụdị mmekọrịta nke olulu mmiri Quantum maka ịmepụta otu nsogbu Shockley stacking na kristal 4H-SiC n'okpuru ọnọdụ enweghị nha nhata. J. Ngwa. physics. 125, 085705 (2019).
Galeckas, A., Linnros, J. & Pirouz, P. Nsogbu nchịkọta nke njikọta kpatara: Ihe akaebe maka usoro izugbe na SiC hexagonal. Galeckas, A., Linnros, J. & Pirouz, P. Nsogbu nchịkọta nke njikọta kpatara: Ihe akaebe maka usoro izugbe na SiC hexagonal.Galeckas, A., Linnros, J. na Pirouz, P. Mmerụ ahụ nke Nkwakọba Kpatara: Ihe akaebe maka usoro a na-ahụkarị na SiC nke Hexagonal. Galeckas, A., Linnros, J. & Pirouz, P. 复合诱导的堆垛层错：六方SiC 中一般机制的证据。 Galeckas, A., Linnros, J. & Pirouz, P. Ihe akaebe maka usoro izugbe nke oyi akwa nhazi induction: 六方SiC.Galeckas, A., Linnros, J. na Pirouz, P. Mmerụ ahụ nke Nkwakọba Kpatara: Ihe akaebe maka usoro a na-ahụkarị na SiC nke Hexagonal.physics Pastọ Wright. 96, 025502 (2006).
Ishikawa, Y., Sudo, M., Yao, Y.-Z., Sugawara, Y. & Kato, M. Mgbasawanye nke otu nsogbu Shockley stacking na oyi akwa epitaxial 4H-SiC (11 2 ¯0) nke sitere na radieshon elektrọn beam kpatara.Ishikawa, Y., M. Sudo, ọkụ Y.-Z.Ishikawa, Y., Sudo M., Y.-Z Psychology.Igbe, Ю., M. Судо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Nleba anya nke njikọta nke ihe na-ebu ibu na nsogbu Shockley na-agbakọ na nkwụsịtụ akụkụ na 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Nleba anya nke njikọta nke ihe na-ebu ibu na nsogbu Shockley na-agbakọ na nkwụsịtụ akụkụ na 4H-SiC.Kato M., Katahira S., Itikawa Y., Harada S. na Kimoto T. Nleba anya nke njikọta nke ihe eji ebu ihe na otu Shockley ntụpọ na mwepụ akụkụ na 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley 堆垛层错和4H-SiC 部分位错中载流子复合的跟 Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley stacking stacking和4H-SiC partial 位错中载流子去生的可以。Kato M., Katahira S., Itikawa Y., Harada S. na Kimoto T. Nleba anya nke njikọta nke ihe eji ebu ihe na otu Shockley ntụpọ na mwepụ akụkụ na 4H-SiC.J. Ngwa. physics 124, 095702 (2018).
Kimoto, T. & Watanabe, H. Injinịa nwere ntụpọ na teknụzụ SiC maka ngwaọrụ ike voltaji dị elu. Kimoto, T. & Watanabe, H. Injinịa nwere ntụpọ na teknụzụ SiC maka ngwaọrụ ike voltaji dị elu.Kimoto, T. na Watanabe, H. Mmepe nke ntụpọ na teknụzụ SiC maka ngwaọrụ ike voltaji dị elu. Kimoto, T. & Watanabe, H. 用于高压功率器件的SiC 技术中的缺陷工程。 Kimoto, T. & Watanabe, H. Injinịa nwere ntụpọ na teknụzụ SiC maka ngwaọrụ ike voltaji dị elu.Kimoto, T. na Watanabe, H. Mmepe nke ntụpọ na teknụzụ SiC maka ngwaọrụ ike voltaji dị elu.Ngwa physics Express 13, 120101 (2020).
Zhang, Z. & Sudarshan, TS. Ihe na-enweghị mwepụ nke ikuku basal nke silicon carbide. Zhang, Z. & Sudarshan, TS. Ihe na-enweghị mwepụ nke ikuku basal nke silicon carbide.Zhang Z. na Sudarshan TS. Ihe na-enweghị mwepụ nke silicon carbide n'ime basal plane. Zhang, Z. & Sudarshan, TS 碳化硅基面无位错外延。 Zhang, Z. na Sudarshan, TSZhang Z. na Sudarshan TS. Ihe na-enweghị mwepụ nke ụgbọ elu basal silicon carbide.nkwupụta. physics. Wright. 87, 151913 (2005).
Zhang, Z., Moulton, E. & Sudarshan, TS Usoro nke iwepụ ndọpụ nke basal plane na fim SiC dị gịrịgịrị site na epitaxy na ihe e ji kpụọ ihe. Zhang, Z., Moulton, E. & Sudarshan, TS Usoro nke iwepụ ndọpụ nke basal plane na fim SiC dị gịrịgịrị site na epitaxy na ihe e ji kpụọ ihe.Zhang Z., Moulton E. na Sudarshan TS Usoro nke iwepụ ndọpụ nke isi ụgbọelu na fim SiC dị gịrịgịrị site na epitaxy na ihe e ji kpụọ ihe. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制。 Zhang, Z., Moulton, E. & Sudarshan, TS Usoro nke iwepụ ihe nkiri SiC dị gịrịgịrị site na ịpị ihe ndị dị n'okpuru ala.Zhang Z., Moulton E. na Sudarshan TS Usoro nke iwepụ ndọpụ nke isi ihe dị na fim SiC dị gịrịgịrị site na epitaxy na ihe ndị e ji aka dee.physics ngwa Wright. 89, 081910 (2006).
Shtalbush RE na ndị ọzọ. Nkwụsị uto na-eduga na mbelata na mwepụ nke basal plane n'oge epitaxy 4H-SiC. nkwupụta. physics. Wright. 94, 041916 (2009).
Zhang, X. & Tsuchida, H. Mgbanwe nke mgbanwe basal plane gaa na mgbanwe nsọtụ eriri na epilayers 4H-SiC site na ime ka okpomọkụ dị elu daa. Zhang, X. & Tsuchida, H. Mgbanwe nke mgbanwe basal plane gaa na mgbanwe nsọtụ eriri na epilayers 4H-SiC site na ime ka okpomọkụ dị elu daa.Zhang, X. na Tsuchida, H. Mgbanwe nke mgbanwe basal plane ka ọ bụrụ mgbanwe n'akụkụ eriri na akwa epitaxial 4H-SiC site na ime ka okpomọkụ dị elu dajụọ. Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiC 外延层中的基面位错转化为螺纹刃位错。 Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiCZhang, X. na Tsuchida, H. Mgbanwe nke mgbanwe nke isi ụgbọelu ka ọ bụrụ mgbanwe nke akụkụ eriri na oyi akwa epitaxial 4H-SiC site na ime ka okpomọkụ dị elu dajụọ.J. Ngwa. physics. 111, 123512 (2012).
Song, H. & Sudarshan, TS Mgbanwe nke mgbanwe ụgbọelu Basal dị nso na njikọ epilayer/substrate na uto epitaxial nke 4° off-axis 4H–SiC. Song, H. & Sudarshan, TS Mgbanwe nke mgbanwe ụgbọelu Basal dị nso na njikọ epilayer/substrate na uto epitaxial nke 4° off-axis 4H–SiC.Song, H. na Sudarshan, TS Mgbanwe nke mgbanwe nke basal plane dị nso na epitaxial layer/substrate interface n'oge uto epitaxial nke 4H–SiC na-apụ apụ. Song, H. & Sudarshan, TS 在4° 离轴4H-SiC 外延生长中外延层/衬底界面附近的基底平面位错转换。 Abụ, H. & Sudarshan, TS 在4° 离轴4H-SiC Song, H. na Sudarshan, TSMgbanwe nke ntụpọ dị n'akụkụ ala nke ihe mkpuchi ahụ dị nso na oke oyi akwa/ala nke epitaxial n'oge uto epitaxial nke 4H-SiC n'èzí axis 4°.J. Crystal. Uto 371, 94–101 (2013).
Konishi, K. na ndị ọzọ. N'oge ọkụ dị elu, mgbasa nke nsogbu basal plane dislocation stacking fault na akwa epitaxial 4H-SiC na-agbanwe ka ọ bụrụ dislocations nke eriri ọnụ. J. Ngwa. physics. 114, 014504 (2013).
Konishi, K. na ndị ọzọ. Hazie akwa epitaxial maka SiC MOSFETs bipolar nke na-anaghị emebi emebi site na ịchọpụta ebe nuklia ndị a na-etinye n'ime ebe a na-enyocha ihe gbasara X-ray. AIP Advanced 12, 035310 (2022).
Lin, S. na ndị ọzọ. Mmetụta nke nhazi nkewapụ nke basal plane na mgbasa nke otu nsogbu stacking ụdị Shockley n'oge ire ere ugbu a nke 4H-SiC pin diode. Japan. J. Ngwa. physics. 57, 04FR07 (2018).
Tahara, T., na ndị ọzọ. A na-eji obere oge ebufe ihe dị ka obere ihe n'ime epilayers 4H-SiC bara ụba na nitrogen iji gbochie nsogbu ndị na-agbakọta na diode PiN. J. Ngwa. physics. 120, 115101 (2016).
Tahara, T. et al. Ndabere nke mkpokọta ihe na-ebu ibu nke mgbasa nke otu Shockley stacking fault na diode PiN 4H-SiC. J. Ngwa. Physics 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Sistemụ FCA microscopic maka nha ndụ onye na-ebu ihe nke a na-edozi omimi na SiC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Sistemụ FCA microscopic maka nha ndụ onye na-ebu ihe nke a na-edozi omimi na SiC.Mei, S., Tawara, T., Tsuchida, H. na Kato, M. Sistemụ microscopic FCA maka nha ogologo ndụ nke ihe na-ebu ibu na Silicon Carbide. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. 用于SiC 中深度分辨载流子寿命测量的显微FCA 系统。 Mae, S., Tawara, T., Tsuchida, H. & Kato, M. N'ihi na SiC ọkara-omimi 分辨载流子ngụ oge ndụ 的月微FCA usoro.Mei S., Tawara T., Tsuchida H. na Kato M. Sistemụ Micro-FCA maka nha ndụ onye na-ebu ihe nke a na-edozi omimi na silicon carbide.Nzukọ sayensị alma mater 924, 269–272 (2018).
Hirayama, T. et al. E jiri mkpebi oge nke nnabata ihe na-ebufe ihe n'efu na ìhè gafere tụọ nkesa omimi nke ndụ ihe na-ebufe ihe n'ime akwa epitaxial 4H-SiC dị arọ nke na-anaghị emebi emebi. Gbanwee gaa na sayensị. mita. 91, 123902 (2020).