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4H-SiC tau raug muag ua khoom siv rau cov khoom siv hluav taws xob semiconductor. Txawm li cas los xij, kev ntseeg siab mus sij hawm ntev ntawm 4H-SiC cov khoom siv yog qhov teeb meem rau lawv daim ntawv thov dav dav, thiab qhov teeb meem kev ntseeg siab tseem ceeb tshaj plaws ntawm 4H-SiC cov khoom siv yog bipolar degradation. Qhov kev puas tsuaj no yog tshwm sim los ntawm ib qho Shockley stacking fault (1SSF) kev nthuav dav ntawm basal plane dislocations hauv 4H-SiC crystals. Ntawm no, peb tawm tswv yim ib txoj hauv kev rau kev tswj hwm 1SSF kev nthuav dav los ntawm kev cog cov protons rau ntawm 4H-SiC epitaxial wafers. PiN diodes tsim rau ntawm wafers nrog proton implantation qhia tib yam tam sim no-voltage yam ntxwv li diodes tsis muaj proton implantation. Hauv kev sib piv, 1SSF kev nthuav dav raug tswj hwm zoo hauv proton-implanted PiN diode. Yog li, kev cog cov protons rau hauv 4H-SiC epitaxial wafers yog ib txoj hauv kev zoo rau kev tswj hwm bipolar degradation ntawm 4H-SiC fais fab semiconductor cov khoom siv thaum tswj hwm kev ua haujlwm ntawm lub cuab yeej. Qhov tshwm sim no pab txhawb rau kev tsim cov khoom siv 4H-SiC txhim khu kev qha.
Silicon carbide (SiC) tau lees paub dav dav tias yog cov khoom siv semiconductor rau cov khoom siv semiconductor muaj zog, zaus siab uas tuaj yeem ua haujlwm hauv qhov chaw ib puag ncig hnyav1. Muaj ntau hom SiC polytypes, ntawm cov uas 4H-SiC muaj cov khoom siv semiconductor zoo heev xws li kev txav mus los ntawm hluav taws xob siab thiab lub zog tawg hluav taws xob muaj zog2. 4H-SiC wafers nrog lub cheeb ntawm 6 nti tam sim no tau lag luam thiab siv rau kev tsim khoom loj ntawm cov khoom siv hluav taws xob semiconductor3. Cov kab ke traction rau cov tsheb fais fab thiab tsheb ciav hlau tau tsim los ntawm kev siv 4H-SiC4.5 cov khoom siv hluav taws xob semiconductor. Txawm li cas los xij, 4H-SiC cov khoom siv tseem raug kev txom nyem los ntawm cov teeb meem kev ntseeg siab mus sij hawm ntev xws li dielectric breakdown lossis luv luv-circuit kev ntseeg siab,6,7 uas ib qho ntawm cov teeb meem kev ntseeg siab tseem ceeb tshaj plaws yog bipolar degradation2,8,9,10,11. Qhov bipolar degradation no tau pom ntau tshaj 20 xyoo dhau los thiab tau ntev los ua teeb meem hauv SiC khoom siv tsim.
Kev puas tsuaj ntawm bipolar yog tshwm sim los ntawm ib qho Shockley stack defect (1SSF) hauv 4H-SiC crystals nrog basal plane dislocations (BPDs) propagating los ntawm recombination enhanced dislocation glide (REDG) 12,13,14,15,16,17,18,19. Yog li ntawd, yog tias BPD nthuav dav raug suppressed rau 1SSF, 4H-SiC fais fab khoom siv tuaj yeem tsim tsis muaj bipolar degradation. Muaj ntau txoj kev tau tshaj tawm los tiv thaiv BPD propagation, xws li BPD rau Thread Edge Dislocation (TED) kev hloov pauv 20,21,22,23,24. Hauv SiC epitaxial wafers tshiab, BPD feem ntau yog nyob rau hauv lub substrate thiab tsis nyob rau hauv epitaxial txheej vim yog kev hloov pauv ntawm BPD rau TED thaum lub sijhawm pib ntawm epitaxial kev loj hlob. Yog li ntawd, qhov teeb meem seem ntawm bipolar degradation yog kev faib tawm ntawm BPD hauv lub substrate 25,26,27. Qhov kev ntxig ntawm "txheej txheem sib xyaw ua ke" ntawm cov txheej txheem drift thiab lub substrate tau raug pom zoo ua ib txoj hauv kev zoo rau kev tiv thaiv BPD nthuav dav hauv lub substrate28, 29, 30, 31. Cov txheej txheem no ua rau muaj feem ntau ntawm cov khub electron-hole recombination hauv cov txheej epitaxial thiab SiC substrate. Kev txo cov lej ntawm cov khub electron-hole txo qhov kev tsav tsheb ntawm REDG rau BPD hauv lub substrate, yog li cov txheej txheem sib xyaw ua ke tuaj yeem tiv thaiv kev puas tsuaj bipolar. Nws yuav tsum tau sau tseg tias kev ntxig ntawm ib txheej cuam tshuam nrog cov nqi ntxiv hauv kev tsim cov wafers, thiab tsis muaj kev ntxig ntawm ib txheej nws nyuaj rau txo cov lej ntawm cov khub electron-hole los ntawm kev tswj hwm tsuas yog kev tswj hwm ntawm lub neej ntawm tus neeg nqa khoom. Yog li ntawd, tseem muaj qhov xav tau los tsim lwm txoj hauv kev tiv thaiv kom ua tiav qhov sib npaug zoo dua ntawm cov nqi tsim khoom siv thiab cov txiaj ntsig.
Vim tias kev nthuav dav ntawm BPD mus rau 1SSF xav tau kev txav mus los ntawm ib feem dislocations (PDs), pinning lub PD yog ib txoj hauv kev zoo los tiv thaiv bipolar degradation. Txawm hais tias PD pinning los ntawm cov hlau impurities tau tshaj tawm, FPDs hauv 4H-SiC substrates nyob ntawm qhov deb ntawm ntau dua 5 μm ntawm qhov chaw ntawm epitaxial txheej. Tsis tas li ntawd, txij li thaum lub diffusion coefficient ntawm txhua yam hlau hauv SiC yog me heev, nws nyuaj rau cov hlau impurities kom diffuse rau hauv lub substrate34. Vim yog qhov loj ntawm atomic mass ntawm cov hlau, ion implantation ntawm cov hlau kuj nyuaj. Hauv kev sib piv, nyob rau hauv cov ntaub ntawv ntawm hydrogen, lub teeb tshaj plaws, ions (protons) tuaj yeem implanted rau hauv 4H-SiC mus rau qhov tob ntawm ntau dua 10 µm siv MeV-class accelerator. Yog li ntawd, yog tias proton implantation cuam tshuam rau PD pinning, ces nws tuaj yeem siv los tiv thaiv BPD propagation hauv lub substrate. Txawm li cas los xij, proton implantation tuaj yeem ua puas tsuaj 4H-SiC thiab ua rau txo qis kev ua haujlwm ntawm lub cuab yeej37,38,39,40.
Yuav kom kov yeej qhov puas tsuaj ntawm cov khoom siv vim yog proton implantation, kev siv high-temperature annealing los kho qhov puas tsuaj, zoo ib yam li txoj kev annealing uas feem ntau siv tom qab acceptor ion implantation hauv kev ua cov khoom siv1, 40, 41, 42. Txawm hais tias secondary ion mass spectrometry (SIMS)43 tau tshaj tawm txog hydrogen diffusion vim yog high-temperature annealing, nws muaj peev xwm hais tias tsuas yog qhov ceev ntawm hydrogen atoms ze ntawm FD tsis txaus los ntes qhov pinning ntawm PR siv SIMS. Yog li ntawd, hauv kev tshawb fawb no, peb tau cog protons rau hauv 4H-SiC epitaxial wafers ua ntej cov txheej txheem tsim khoom siv, suav nrog high temperature annealing. Peb siv PiN diodes ua cov qauv khoom siv sim thiab tsim lawv rau ntawm proton-implanted 4H-SiC epitaxial wafers. Tom qab ntawd peb tau saib cov yam ntxwv volt-ampere los kawm txog qhov puas tsuaj ntawm kev ua haujlwm ntawm cov khoom siv vim yog proton txhaj tshuaj. Tom qab ntawd, peb tau pom qhov nthuav dav ntawm 1SSF hauv cov duab electroluminescence (EL) tom qab siv hluav taws xob rau PiN diode. Thaum kawg, peb tau lees paub qhov cuam tshuam ntawm kev txhaj tshuaj proton rau kev tswj hwm ntawm 1SSF kev nthuav dav.
Hauv daim duab. Daim duab 1 qhia txog cov yam ntxwv tam sim no-voltage (CVCs) ntawm PiN diodes ntawm chav tsev kub hauv thaj chaw uas muaj thiab tsis muaj proton implantation ua ntej pulsed current. PiN diodes nrog proton txhaj tshuaj qhia txog cov yam ntxwv rectification zoo ib yam li diodes tsis muaj proton txhaj tshuaj, txawm tias cov yam ntxwv IV tau sib koom ntawm cov diodes. Txhawm rau qhia qhov sib txawv ntawm cov xwm txheej txhaj tshuaj, peb tau plotted lub zog voltage ntawm qhov ceev tam sim no ntawm 2.5 A / cm2 (sib raug rau 100 mA) ua ib daim duab statistical raws li pom hauv Daim Duab 2. Lub nkhaus kwv yees los ntawm kev faib tawm ib txwm kuj sawv cev los ntawm ib txoj kab dotted. kab. Raws li tuaj yeem pom los ntawm cov ncov ntawm cov nkhaus, qhov on-resistance me ntsis nce ntawm proton koob tshuaj ntawm 1014 thiab 1016 cm-2, thaum PiN diode nrog proton koob tshuaj ntawm 1012 cm-2 qhia txog yuav luag tib yam ntxwv li tsis muaj proton implantation. Peb kuj tau ua proton implantation tom qab tsim cov PiN diodes uas tsis pom kev sib npaug electroluminescence vim yog kev puas tsuaj los ntawm proton implantation raws li pom hauv Daim Duab S1 raws li tau piav qhia hauv kev tshawb fawb yav dhau los37,38,39. Yog li ntawd, annealing ntawm 1600 ° C tom qab implantation ntawm Al ions yog ib qho txheej txheem tsim nyog los tsim cov khoom siv los ua kom Al acceptor ua haujlwm, uas tuaj yeem kho qhov puas tsuaj los ntawm proton implantation, uas ua rau CVCs zoo ib yam ntawm implanted thiab non-implanted proton PiN diodes. Lub zaus rov qab tam sim no ntawm -5 V kuj tau nthuav tawm hauv Daim Duab S2, tsis muaj qhov sib txawv tseem ceeb ntawm diodes nrog thiab tsis muaj proton txhaj tshuaj.
Cov yam ntxwv ntawm volt-ampere ntawm PiN diodes nrog thiab tsis muaj protons txhaj rau ntawm chav tsev kub. Cov lus dab neeg qhia txog koob tshuaj ntawm protons.
Qhov zaus ntawm lub zog hluav taws xob ntawm qhov tam sim no ncaj qha 2.5 A/cm2 rau PiN diodes nrog cov protons txhaj thiab tsis txhaj. Cov kab dotted sib raug rau qhov kev faib tawm ib txwm muaj.
Hauv daim duab 3 qhia txog daim duab EL ntawm PiN diode nrog qhov ceev tam sim no ntawm 25 A/cm2 tom qab voltage. Ua ntej siv cov pulsed current load, cov cheeb tsam tsaus ntawm lub diode tsis tau pom, raws li pom hauv Daim Duab 3. C2. Txawm li cas los xij, raws li pom hauv daim duab 3a, hauv PiN diode tsis muaj proton implantation, ntau thaj tsam tsaus nti nrog cov npoo kaj tau pom tom qab siv hluav taws xob voltage. Cov cheeb tsam tsaus nti zoo li tus pas nrig tau pom hauv cov duab EL rau 1SSF txuas ntxiv los ntawm BPD hauv lub substrate28,29. Hloov chaw, qee qhov kev ua yuam kev ntev tau pom hauv PiN diodes nrog cov protons implanted, raws li pom hauv Daim Duab 3b-d. Siv X-ray topography, peb tau lees paub qhov muaj PRs uas tuaj yeem txav mus los ntawm BPD mus rau lub substrate ntawm qhov chaw ntawm cov neeg sib cuag hauv PiN diode yam tsis muaj proton txhaj tshuaj (Daim duab 4: daim duab no yam tsis tshem tawm lub electrode sab saum toj (duab, PR nyob rau hauv cov electrodes tsis pom). Yog li ntawd, thaj chaw tsaus ntuj hauv daim duab EL sib raug rau 1SSF BPD ntev hauv lub substrate. Cov duab EL ntawm lwm cov diodes PiN uas tau thauj khoom tau pom hauv Daim Duab 1 thiab 2. Cov yeeb yaj kiab S3-S6 nrog thiab tsis muaj thaj chaw tsaus ntuj ntev (cov duab EL hloov pauv sijhawm ntawm PiN diodes yam tsis muaj proton txhaj tshuaj thiab cog rau ntawm 1014 cm-2) kuj tau pom hauv Cov Ntaub Ntawv Ntxiv.
Cov duab EL ntawm PiN diodes ntawm 25 A/cm2 tom qab 2 teev ntawm kev ntxhov siab hluav taws xob (a) tsis muaj proton implantation thiab nrog cov koob tshuaj implanted ntawm (b) 1012 cm-2, (c) 1014 cm-2 thiab (d) 1016 cm-2 protons.
Peb xam qhov ceev ntawm cov 1SSF uas nthuav dav los ntawm kev xam cov cheeb tsam tsaus nti nrog cov npoo ci hauv peb lub PiN diodes rau txhua qhov xwm txheej, raws li pom hauv Daim Duab 5. Qhov ceev ntawm cov 1SSF uas nthuav dav txo qis nrog kev nce ntxiv ntawm cov tshuaj proton, thiab txawm tias ntawm qhov koob tshuaj ntawm 1012 cm-2, qhov ceev ntawm cov 1SSF uas nthuav dav tseem qis dua li hauv cov diode PiN uas tsis tau cog rau hauv.
Kev nce ntxiv ntawm SF PiN diodes nrog thiab tsis muaj proton implantation tom qab loading nrog lub pulsed current (txhua lub xeev suav nrog peb lub loaded diodes).
Kev luv lub neej ntawm tus neeg nqa khoom kuj cuam tshuam rau kev nthuav dav, thiab kev txhaj tshuaj proton txo qhov lub neej ntawm tus neeg nqa khoom 32,36. Peb tau pom lub neej ntawm tus neeg nqa khoom hauv txheej epitaxial 60 µm tuab nrog cov protons txhaj tshuaj ntawm 1014 cm-2. Los ntawm lub neej ntawm tus neeg nqa khoom thawj zaug, txawm hais tias qhov implant txo tus nqi mus rau ~ 10%, tom qab annealing rov qab los rau ~ 50%, raws li pom hauv daim duab S7. Yog li ntawd, lub neej ntawm tus neeg nqa khoom, txo qis vim yog proton implantation, rov qab los ntawm kev kub siab annealing. Txawm hais tias kev txo qis 50% hauv lub neej ntawm tus neeg nqa khoom kuj tseem tiv thaiv kev nthuav dav ntawm cov teeb meem stacking, cov yam ntxwv I-V, uas feem ntau nyob ntawm lub neej ntawm tus neeg nqa khoom, qhia tsuas yog qhov sib txawv me me ntawm cov diodes txhaj tshuaj thiab tsis-implanted. Yog li ntawd, peb ntseeg tias PD anchoring ua lub luag haujlwm hauv kev txwv tsis pub 1SSF nthuav dav.
Txawm hais tias SIMS tsis tau pom hydrogen tom qab annealing ntawm 1600 ° C, raws li tau tshaj tawm hauv cov kev tshawb fawb yav dhau los, peb tau pom qhov cuam tshuam ntawm proton implantation ntawm kev txwv ntawm 1SSF nthuav dav, raws li pom hauv Daim Duab 1 thiab 4. 3, 4. Yog li ntawd, peb ntseeg tias PD yog anchored los ntawm hydrogen atoms nrog qhov ceev hauv qab qhov txwv ntawm kev tshawb pom ntawm SIMS (2 × 1016 cm-3) lossis cov ntsiab lus tsis zoo los ntawm kev cog. Nws yuav tsum tau sau tseg tias peb tsis tau lees paub qhov nce ntawm qhov kev tiv thaiv ntawm lub xeev vim yog qhov ntev ntawm 1SSF tom qab lub zog tam sim no. Qhov no yuav yog vim muaj kev sib cuag tsis zoo ohmic ua siv peb cov txheej txheem, uas yuav raug tshem tawm yav tom ntej.
Xaus lus, peb tau tsim ib txoj kev quenching rau kev txuas ntxiv BPD mus rau 1SSF hauv 4H-SiC PiN diodes siv proton implantation ua ntej tsim khoom siv. Qhov kev puas tsuaj ntawm I-V tus yam ntxwv thaum lub sijhawm proton implantation tsis tseem ceeb, tshwj xeeb tshaj yog ntawm proton koob tshuaj ntawm 1012 cm-2, tab sis qhov cuam tshuam ntawm kev tswj hwm 1SSF nthuav dav yog qhov tseem ceeb. Txawm hais tias hauv kev tshawb fawb no peb tau tsim 10 µm tuab PiN diodes nrog proton implantation mus rau qhov tob ntawm 10 µm, nws tseem ua tau kom zoo dua cov xwm txheej implantation thiab siv lawv los tsim lwm hom 4H-SiC khoom siv. Cov nqi ntxiv rau kev tsim khoom siv thaum lub sijhawm proton implantation yuav tsum tau xav txog, tab sis lawv yuav zoo ib yam li cov rau txhuas ion implantation, uas yog cov txheej txheem tsim khoom tseem ceeb rau 4H-SiC cov khoom siv fais fab. Yog li, proton implantation ua ntej ua cov khoom siv yog ib txoj hauv kev rau kev tsim cov khoom siv fais fab bipolar 4H-SiC yam tsis muaj kev puas tsuaj.
Ib daim wafer n-hom 4H-SiC 4-nti nrog lub txheej epitaxial tuab ntawm 10 µm thiab qhov concentration doping ntawm 1 × 1016 cm-3 tau siv ua qauv. Ua ntej ua cov cuab yeej, H+ ions tau muab tso rau hauv lub phaj nrog lub zog nrawm ntawm 0.95 MeV ntawm chav tsev kub mus rau qhov tob ntawm kwv yees li 10 μm ntawm lub kaum sab xis rau ntawm qhov chaw ntawm lub phaj. Thaum lub sijhawm cog proton, lub ntsej muag ntawm lub phaj tau siv, thiab lub phaj muaj cov ntu tsis muaj thiab nrog cov koob tshuaj proton ntawm 1012, 1014, lossis 1016 cm-2. Tom qab ntawd, Al ions nrog cov koob tshuaj proton ntawm 1020 thiab 1017 cm-3 tau muab tso rau saum tag nrho lub wafer mus rau qhov tob ntawm 0-0.2 µm thiab 0.2-0.5 µm ntawm qhov chaw, ua raws li kev annealing ntawm 1600 ° C los tsim lub hau carbon los tsim cov txheej ap. -hom. Tom qab ntawd, ib sab Ni tom qab tau tso rau ntawm sab substrate, thaum 2.0 hli × 2.0 hli comb-puab Ti/Al pem hauv ntej sab tiv tauj tsim los ntawm photolithography thiab cov txheej txheem tev tawm tau tso rau ntawm sab epitaxial txheej. Thaum kawg, kev sib cuag annealing yog nqa tawm ntawm qhov kub ntawm 700 ° C. Tom qab txiav cov wafer rau hauv cov chips, peb tau ua qhov kev ntxhov siab thiab daim ntawv thov.
Cov yam ntxwv I-V ntawm cov diodes PiN uas tau tsim los tau pom siv HP4155B semiconductor parameter analyzer. Raws li kev ntxhov siab hluav taws xob, 10-millisecond pulsed tam sim no ntawm 212.5 A / cm2 tau qhia rau 2 teev ntawm qhov zaus ntawm 10 pulses / sec. Thaum peb xaiv qhov qis dua tam sim no lossis zaus, peb tsis tau pom 1SSF nthuav dav txawm tias nyob hauv PiN diode yam tsis muaj proton txhaj tshuaj. Thaum lub sijhawm siv hluav taws xob voltage, qhov kub ntawm PiN diode yog nyob ib puag ncig 70 ° C yam tsis muaj cua sov, raws li pom hauv Daim Duab S8. Cov duab electroluminescent tau txais ua ntej thiab tom qab kev ntxhov siab hluav taws xob ntawm qhov ceev tam sim no ntawm 25 A / cm2. Synchrotron reflection grazing incidence X-ray topography siv lub teeb monochromatic X-ray beam (λ = 0.15 nm) ntawm Aichi Synchrotron Radiation Center, lub ag vector hauv BL8S2 yog -1-128 lossis 11-28 (saib ref. 44 rau cov ntsiab lus). ).
Qhov zaus voltage ntawm qhov ceev tam sim no ntawm 2.5 A/cm2 raug rho tawm nrog lub sijhawm ntawm 0.5 V hauv daim duab 2 raws li CVC ntawm txhua lub xeev ntawm PiN diode. Los ntawm tus nqi nruab nrab ntawm kev ntxhov siab Vave thiab qhov kev hloov pauv tus qauv σ ntawm kev ntxhov siab, peb plot ib qho nkhaus faib tawm ib txwm muaj nyob rau hauv daim ntawv ntawm kab dotted hauv Daim Duab 2 siv cov kab zauv hauv qab no:
Werner, MR & Fahrner, WR Kev tshuaj xyuas txog cov ntaub ntawv, microsensors, systems thiab cov khoom siv rau kev siv kub thiab ib puag ncig hnyav. Werner, MR & Fahrner, WR Kev tshuaj xyuas txog cov ntaub ntawv, microsensors, systems thiab cov khoom siv rau kev siv kub thiab ib puag ncig hnyav.Werner, MR thiab Farner, WR Kev txheeb xyuas cov ntaub ntawv, microsensors, systems thiab cov khoom siv rau kev siv hauv qhov kub thiab txias thiab ib puag ncig hnyav. Werner, MR & Fahrner, WR 对用于高温和恶劣环境应用的材料、微传感器、系统和设备的评论。 Werner, MR & Fahrner, WR Kev tshuaj xyuas cov ntaub ntawv, microsensors, systems thiab cov khoom siv rau qhov kub thiab txias siab thiab cov ntawv thov ib puag ncig tsis zoo.Werner, MR thiab Farner, WR Kev txheeb xyuas cov ntaub ntawv, microsensors, systems thiab cov khoom siv rau kev siv ntawm qhov kub thiab txias thiab cov xwm txheej hnyav.IEEE Trans. Kev lag luam hluav taws xob. 48, 249–257 (2001).
Kimoto, T. & Cooper, JA Cov Ntsiab Lus Tseem Ceeb ntawm Silicon Carbide Technology Cov Ntsiab Lus Tseem Ceeb ntawm Silicon Carbide Technology: Kev Loj Hlob, Kev Cim, Cov Khoom Siv thiab Cov Ntawv Thov Vol. Kimoto, T. & Cooper, JA Cov Ntsiab Lus Tseem Ceeb ntawm Silicon Carbide Technology Cov Ntsiab Lus Tseem Ceeb ntawm Silicon Carbide Technology: Kev Loj Hlob, Kev Cim, Cov Khoom Siv thiab Cov Ntawv Thov Vol.Kimoto, T. thiab Cooper, JA Cov Ntsiab Lus Tseem Ceeb ntawm Silicon Carbide Technology Cov Ntsiab Lus Tseem Ceeb ntawm Silicon Carbide Technology: Kev Loj Hlob, Cov Yam Ntxwv, Cov Khoom Siv thiab Cov Ntawv Thov Vol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 Kimoto, T. & Cooper, JA Lub hauv paus thev naus laus zis Carbon化silicon Lub hauv paus thev naus laus zis Carbon化silicon: kev loj hlob, kev piav qhia, cov khoom siv thiab qhov ntim ntawm daim ntawv thov.Kimoto, T. thiab Cooper, J. Cov Ntsiab Lus Tseem Ceeb ntawm Silicon Carbide Technology Cov Ntsiab Lus Tseem Ceeb ntawm Silicon Carbide Technology: Kev Loj Hlob, Cov Yam Ntxwv, Cov Khoom Siv thiab Cov Ntawv Thov Vol.252 (Wiley Singapore Pte Ltd, 2014).
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Broughton, J., Smet, V., Tummala, RR & Joshi, YK Kev tshuaj xyuas cov thev naus laus zis thermal ntim rau cov khoom siv hluav taws xob hauv tsheb rau lub hom phiaj traction. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Kev tshuaj xyuas cov thev naus laus zis thermal ntim rau cov khoom siv hluav taws xob hauv tsheb rau lub hom phiaj traction.Broughton, J., Smet, V., Tummala, RR thiab Joshi, YK Kev txheeb xyuas ntawm cov thev naus laus zis thermal ntim rau cov khoom siv hluav taws xob hauv tsheb rau lub hom phiaj traction. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的汽车电力电子热封装技术的回顾. Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR thiab Joshi, YK Kev txheej txheem cej luam ntawm cov thev naus laus zis thermal ntim rau cov khoom siv hluav taws xob hauv tsheb rau lub hom phiaj traction.J. Electron. Pob. trance. ASME 140, 1-11 (2018).
Sato, K., Kato, H. & Fukushima, T. Kev tsim kho ntawm SiC siv traction system rau tiam tom ntej Shinkansen tsheb ciav hlau ceev ceev. Sato, K., Kato, H. & Fukushima, T. Kev tsim kho ntawm SiC siv traction system rau tiam tom ntej Shinkansen tsheb ciav hlau ceev ceev.Sato K., Kato H. thiab Fukushima T. Kev tsim kho ntawm lub tshuab SiC traction rau tiam tom ntej tsheb ciav hlau Shinkansen ceev ceev.Sato K., Kato H. thiab Fukushima T. Kev Tsim Kho Lub Tshuab Traction rau SiC Daim Ntawv Thov rau Cov Tsheb Ciav Hlau Shinkansen Ceev Tiam Tom Ntej. Cov Lus Qhia Ntxiv IEEJ J. Ind. 9, 453–459 (2020).
Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Cov teeb meem kom paub txog cov khoom siv fais fab SiC uas ntseeg tau heev: Los ntawm cov xwm txheej tam sim no thiab cov teeb meem ntawm SiC wafers. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Cov teeb meem kom paub txog cov khoom siv fais fab SiC uas ntseeg tau heev: Los ntawm cov xwm txheej tam sim no thiab cov teeb meem ntawm SiC wafers.Senzaki, J., Hayashi, S., Yonezawa, Y. thiab Okumura, H. Teeb meem hauv kev siv cov khoom siv fais fab SiC uas ntseeg tau heev: pib los ntawm lub xeev tam sim no thiab qhov teeb meem ntawm wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. 实现高可靠性SiC 功率器件的挑战：从SiC 晶圆的现状和问 Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Qhov kev sib tw ntawm kev ua tiav kev ntseeg siab hauv SiC cov khoom siv fais fab: los ntawm SiC 晶圆的电视和问题设计.Senzaki J, Hayashi S, Yonezawa Y. thiab Okumura H. Cov teeb meem hauv kev tsim cov khoom siv fais fab siab uas siv silicon carbide: kev tshuaj xyuas txog qhov xwm txheej thiab teeb meem cuam tshuam nrog silicon carbide wafers.Xyoo 2018 IEEE International Symposium on Reliability Physics (IRPS). (Senzaki, J. et al. eds.) 3B.3-1-3B.3-6 (IEEE, 2018).
Kim, D. & Sung, W. Txhim kho qhov luv luv ntawm lub voj voog rau 1.2kV 4H-SiC MOSFET siv lub qhov dej tob P uas tau siv los ntawm kev cog rau hauv channeling. Kim, D. & Sung, W. Txhim kho qhov luv luv ntawm lub voj voog rau 1.2kV 4H-SiC MOSFET siv lub qhov dej tob P uas tau siv los ntawm kev cog rau hauv channeling.Kim, D. thiab Sung, V. Txhim kho kev tiv thaiv luv luv rau 1.2 kV 4H-SiC MOSFET siv lub qhov dej tob P uas tau siv los ntawm kev cog rau hauv channel. Kim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性. Kim, D. & Sung, W. P 阱提高了1.2kV 4H-SiC MOSFETKim, D. thiab Sung, V. Txhim kho kev kam rau luv luv ntawm 1.2 kV 4H-SiC MOSFETs siv cov P-wells tob los ntawm kev cog rau hauv channel.IEEE Electronic Devices Lett. 42, 1822–1825 (2021).
Skowronski M. et al. Kev txav mus los ntawm kev sib xyaw ua ke ntawm cov qhov tsis zoo hauv cov diodes 4H-SiC pn uas tig mus tom ntej. J. Daim Ntawv Thov. physics. 92, 4699–4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Kev hloov pauv dislocation hauv 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Kev hloov pauv dislocation hauv 4H silicon carbide epitaxy.Ha S., Meszkowski P., Skowronski M. thiab Rowland LB Kev hloov pauv ntawm qhov chaw thaum lub sijhawm 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBKev hloov pauv ntawm qhov chaw tawg 4H hauv silicon carbide epitaxy.J. Crystal. Kev Loj Hlob 244, 257–266 (2002).
Skowronski, M. & Ha, S. Kev puas tsuaj ntawm cov khoom siv bipolar hexagonal silicon-carbide. Skowronski, M. & Ha, S. Kev puas tsuaj ntawm cov khoom siv bipolar hexagonal silicon-carbide.Skowronski M. thiab Ha S. Kev puas tsuaj ntawm cov khoom siv bipolar hexagonal raws li silicon carbide. Skowronski, M. & Ha, S. 六方碳化硅基双极器件的降解. Skowronski M. & Ha S.Skowronski M. thiab Ha S. Kev puas tsuaj ntawm cov khoom siv bipolar hexagonal raws li silicon carbide.J. Daim Ntawv Thov. physics 99, 011101 (2006).
Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. thiab Ryu S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. thiab Ryu S.-H.Ib txoj kev puas tsuaj tshiab rau cov hluav taws xob SiC fais fab MOSFETs siab. IEEE Electronic Devices Lett. 28, 587–589 (2007).
Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Txog lub zog tsav tsheb rau kev sib xyaw ua ke-induced stacking fault motion hauv 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Txog lub zog tsav tsheb rau kev sib xyaw ua ke-induced stacking fault motion hauv 4H-SiC.Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, thiab Hobart, KD Txog lub zog tsav ntawm kev sib xyaw ua ke-induced stacking fault motion hauv 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, thiab Hobart, KD, Ntawm lub zog tsav tsheb ntawm kev sib xyaw ua ke-induced stacking fault motion hauv 4H-SiC.J. Daim Ntawv Thov. physics. 108, 044503 (2010).
Iijima, A. & Kimoto, T. Qauv hluav taws xob rau kev tsim cov teeb meem Shockley stacking hauv 4H-SiC siv lead ua. Iijima, A. & Kimoto, T. Qauv hluav taws xob rau kev tsim cov teeb meem Shockley stacking hauv 4H-SiC siv lead ua.Iijima, A. thiab Kimoto, T. Qauv hluav taws xob ntawm kev tsim cov qhov tsis zoo ntawm Shockley ntim hauv 4H-SiC siv lead ua. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型. Iijima, A. & Kimoto, T. Qauv hluav taws xob ntawm kev tsim qhov txhaum Shockley stacking hauv 4H-SiC siv lead ua.Iijima, A. thiab Kimoto, T. Qauv zog hluav taws xob ntawm kev tsim cov teeb meem ib qho Shockley ntim hauv 4H-SiC siv lead ua.J. Daim Ntawv Thov. physics 126, 105703 (2019).
Iijima, A. & Kimoto, T. Kev kwv yees ntawm qhov xwm txheej tseem ceeb rau kev nthuav dav / kev sib cog lus ntawm ib qho Shockley stacking faults hauv 4H-SiC PiN diodes. Iijima, A. & Kimoto, T. Kev kwv yees ntawm qhov xwm txheej tseem ceeb rau kev nthuav dav / kev sib cog lus ntawm ib qho Shockley stacking faults hauv 4H-SiC PiN diodes.Iijima, A. thiab Kimoto, T. Kev kwv yees ntawm lub xeev tseem ceeb rau kev nthuav dav / kev nias ntawm ib qho Shockley packing defects hauv 4H-SiC PiN-diodes. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件. Iijima, A. & Kimoto, T. Kev kwv yees ntawm ib qho Shockley stacking txheej nthuav dav / kev cog lus hauv 4H-SiC PiN diodes.Iijima, A. thiab Kimoto, T. Kev kwv yees ntawm cov xwm txheej tseem ceeb rau kev nthuav dav / kev nias ntawm ib qho kev puas tsuaj ntim Shockley hauv 4H-SiC PiN-diodes.kev siv physics Wright. 116, 092105 (2020).
Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Quantum well action model rau kev tsim ntawm ib qho Shockley stacking fault hauv 4H-SiC crystal nyob rau hauv cov xwm txheej tsis sib npaug. Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Quantum well action model rau kev tsim ntawm ib qho Shockley stacking fault hauv 4H-SiC crystal nyob rau hauv cov xwm txheej tsis sib npaug.Mannen Y., Shimada K., Asada K., thiab Otani N. Ib qho qauv quantum well rau kev tsim ntawm ib qho Shockley stacking fault hauv 4H-SiC crystal nyob rau hauv cov xwm txheej tsis sib npaug.Mannen Y., Shimada K., Asada K. thiab Otani N. Quantum qhov dej sib cuam tshuam qauv rau kev tsim cov Shockley stacking faults hauv 4H-SiC siv lead ua nyob rau hauv cov xwm txheej tsis sib npaug. J. Daim Ntawv Thov. physics. 125, 085705 (2019).
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Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism ntawm kev tshem tawm cov basal plane dislocations hauv SiC nyias zaj duab xis los ntawm epitaxy ntawm ib qho etched substrate. Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism ntawm kev tshem tawm cov basal plane dislocations hauv SiC nyias zaj duab xis los ntawm epitaxy ntawm ib qho etched substrate.Zhang Z., Moulton E. thiab Sudarshan TS Mechanism ntawm kev tshem tawm ntawm lub hauv paus dav hlau dislocations hauv SiC nyias zaj duab xis los ntawm epitaxy ntawm ib qho etched substrate. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制. Zhang, Z., Moulton, E. & Sudarshan, TS Lub tshuab tshem tawm SiC zaj duab xis nyias los ntawm kev khawb cov substrate.Zhang Z., Moulton E. thiab Sudarshan TS Mechanism ntawm kev tshem tawm ntawm lub hauv paus dav hlau dislocations hauv SiC nyias zaj duab xis los ntawm epitaxy ntawm etched substrates.kev siv physics Wright. 89, 081910 (2006).
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Lub sijhawm tshaj tawm: Kaum Ib Hlis-06-2022
