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Ua kūʻai ʻia aku ʻo 4H-SiC ma ke ʻano he mea no nā mea semiconductor mana. Eia nō naʻe, ʻo ka hilinaʻi lōʻihi o nā mea hana 4H-SiC he mea keakea i kā lākou noi ākea, a ʻo ka pilikia hilinaʻi koʻikoʻi o nā mea hana 4H-SiC ʻo ia ka hoʻohaʻahaʻa bipolar. Hoʻokumu ʻia kēia hoʻohaʻahaʻa e kahi hoʻolaha hoʻokahi o ka hewa Shockley stacking (1SSF) o nā dislocations papa basal i loko o nā kristal 4H-SiC. Maanei, ke hāpai nei mākou i kahi ʻano hana no ka hoʻopau ʻana i ka hoʻonui ʻana o 1SSF ma ke kau ʻana i nā protons ma nā wafers epitaxial 4H-SiC. Ua hōʻike nā diode PiN i hana ʻia ma nā wafers me ka hoʻokomo ʻana o ka proton i nā ʻano like o ke au-voltage e like me nā diodes me ka ʻole o ka hoʻokomo ʻana o ka proton. I ka hoʻohālikelike ʻana, ua kāohi pono ʻia ka hoʻonui ʻana o 1SSF i loko o ka diode PiN i hoʻokomo ʻia e ka proton. No laila, ʻo ka hoʻokomo ʻana o nā protons i loko o nā wafers epitaxial 4H-SiC he ʻano hana kūpono ia no ka hoʻopau ʻana i ka hoʻohaʻahaʻa bipolar o nā mea hana semiconductor mana 4H-SiC me ka mālama ʻana i ka hana o ka mea hana. Hāʻawi kēia hopena i ka hoʻomohala ʻana i nā mea hana 4H-SiC hilinaʻi loa.
Ua ʻike nui ʻia ʻo Silicon carbide (SiC) he mea semiconductor no nā mea semiconductor mana kiʻekiʻe, alapine kiʻekiʻe e hiki ke hana i nā ʻano ʻino1. Nui nā polytypes SiC, aia i loko o 4H-SiC nā waiwai kino maikaʻi loa o ka mea semiconductor e like me ka neʻe ʻana o ka electron kiʻekiʻe a me ke kahua uila haki ikaika2. ʻO nā wafers 4H-SiC me ke anawaena o 6 ʻīniha ke kūʻai ʻia nei a hoʻohana ʻia no ka hana nui ʻana o nā mea semiconductor mana3. Ua hana ʻia nā ʻōnaehana traction no nā kaʻa uila a me nā kaʻaahi me ka hoʻohana ʻana i nā mea semiconductor mana 4H-SiC4.5. Eia nō naʻe, ke pilikia nei nā mea 4H-SiC i nā pilikia hilinaʻi lōʻihi e like me ka haki ʻana o ka dielectric a i ʻole ka hilinaʻi pōkole,6,7 o ia kekahi o nā pilikia hilinaʻi koʻikoʻi ʻo ia ka bipolar degradation2,8,9,10,11. Ua ʻike ʻia kēia bipolar degradation ma mua o 20 mau makahiki i hala aku nei a ua lōʻihi ka pilikia i ka hana ʻana o nā mea SiC.
Hoʻokumu ʻia ka hoʻohaʻahaʻa ʻana o Bipolar e kahi kīnā hoʻokahi o ka Shockley stack (1SSF) i loko o nā kristal 4H-SiC me nā basal plane dislocations (BPDs) e hoʻolaha ana e ka recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. No laila, inā e kāohi ʻia ka hoʻonui ʻana o BPD i 1SSF, hiki ke hana ʻia nā mea mana 4H-SiC me ka ʻole o ka hoʻohaʻahaʻa bipolar. Ua hōʻike ʻia kekahi mau ʻano hana e kāohi i ka hoʻolaha ʻana o BPD, e like me ka hoʻololi ʻana o BPD i Thread Edge Dislocation (TED) 20,21,22,23,24. I nā wafers epitaxial SiC hou loa, aia ka BPD ma ka substrate a ʻaʻole ma ka papa epitaxial ma muli o ka hoʻololi ʻana o BPD i TED i ka wā mua o ka ulu ʻana o epitaxial. No laila, ʻo ka pilikia i koe o ka hoʻohaʻahaʻa bipolar ʻo ia ka hoʻolaha ʻana o BPD i ka substrate 25,26,27. Ua hāpai ʻia ka hoʻokomo ʻana o kahi "papa hoʻoikaika composite" ma waena o ka papa drift a me ka substrate ma ke ʻano he ʻano hana kūpono no ka kāohi ʻana i ka hoʻonui ʻana o BPD i loko o ka substrate28, 29, 30, 31. Hoʻonui kēia papa i ka hiki ke hoʻohui hou ʻia nā hui electron-hole i loko o ka papa epitaxial a me ka substrate SiC. ʻO ka hōʻemi ʻana i ka helu o nā hui electron-hole e hōʻemi ana i ka ikaika hoʻokele o REDG i BPD i loko o ka substrate, no laila hiki i ka papa hoʻoikaika composite ke kāohi i ka hoʻohaʻahaʻa bipolar. Pono e hoʻomaopopo ʻia ʻo ka hoʻokomo ʻana o kahi papa e pili ana i nā kumukūʻai hou aʻe i ka hana ʻana o nā wafers, a me ka ʻole o ka hoʻokomo ʻana o kahi papa he paʻakikī ke hōʻemi i ka helu o nā hui electron-hole ma ka kaohi wale ʻana i ka kaohi o ke ola o ka mea lawe. No laila, aia nō ka pono nui e hoʻomohala i nā ʻano hoʻopau ʻē aʻe e hoʻokō ai i kahi kaulike maikaʻi ma waena o ke kumukūʻai hana a me ka hua.
Ma muli o ka hoʻonui ʻia ʻana o ka BPD i ka 1SSF e pono ai ka neʻe ʻana o nā dislocations hapa (PDs), ʻo ka hoʻopaʻa ʻana i ka PD he ala hoʻohiki e kāohi ai i ka hoʻohaʻahaʻa bipolar. ʻOiai ua hōʻike ʻia ka hoʻopaʻa ʻana o PD e nā haumia metala, aia nā FPD i loko o nā substrates 4H-SiC ma kahi mamao o 5 μm mai ka ʻili o ka papa epitaxial. Eia kekahi, ʻoiai he liʻiliʻi loa ka coefficient diffusion o kekahi metala ma SiC, he paʻakikī no nā haumia metala ke hoʻolaha i loko o ka substrate34. Ma muli o ka nui o ka atomic mass o nā metala, he paʻakikī hoʻi ka ion implantation o nā metala. I ka hoʻohālikelike ʻana, i ke ʻano o ka hydrogen, hiki ke hoʻokomo ʻia ka element māmā loa, nā ions (protons) i loko o 4H-SiC i kahi hohonu o 10 µm me ka hoʻohana ʻana i kahi accelerator MeV-class. No laila, inā pili ka implantation proton i ka PD pinning, a laila hiki ke hoʻohana ʻia e kāohi i ka hoʻolaha ʻana o BPD i loko o ka substrate. Eia nō naʻe, hiki i ka implantation proton ke hōʻino i ka 4H-SiC a hopena i ka emi ʻana o ka hana o ka hāmeʻa37,38,39,40.
No ka lanakila ʻana i ka hōʻino ʻana o ka hāmeʻa ma muli o ke kau ʻana o ka proton, hoʻohana ʻia ka annealing wela kiʻekiʻe e hoʻoponopono i ka pōʻino, e like me ke ʻano annealing i hoʻohana pinepine ʻia ma hope o ke kau ʻana o ka ion acceptor i ka hana ʻana o ka hāmeʻa1, 40, 41, 42. ʻOiai ua hōʻike ka spectrometry mass ion lua (SIMS)43 i ka hoʻolaha ʻana o ka hydrogen ma muli o ka annealing wela kiʻekiʻe, hiki paha i ka nui o nā ʻātoma hydrogen kokoke i ka FD ʻaʻole lawa e ʻike i ka pinning o ka PR me ka hoʻohana ʻana i ka SIMS. No laila, ma kēia haʻawina, ua hoʻokomo mākou i nā protons i loko o nā wafers epitaxial 4H-SiC ma mua o ke kaʻina hana hana hāmeʻa, me ka annealing wela kiʻekiʻe. Ua hoʻohana mākou i nā diode PiN ma ke ʻano he mau ʻano hana hoʻokolohua a hana iā lākou ma nā wafers epitaxial 4H-SiC i hoʻokomo ʻia i ka proton. A laila nānā mākou i nā ʻano volt-ampere e aʻo i ka hōʻino ʻana o ka hana o ka hāmeʻa ma muli o ka injection proton. Ma hope mai, ʻike mākou i ka hoʻonui ʻia ʻana o 1SSF i nā kiʻi electroluminescence (EL) ma hope o ka hoʻopili ʻana i kahi volta uila i ka diode PiN. ʻO ka hope loa, ua hōʻoia mākou i ka hopena o ka hoʻokomo ʻana o ka proton i ka hoʻopau ʻana i ka hoʻonui ʻana o 1SSF.
Ma ke kiʻi. Hōʻike ka Kiʻi 1 i nā ʻano o ke au-voltage (CVCs) o nā diode PiN ma ka mahana o ka lumi ma nā wahi me ka ʻole o ka hoʻokomo ʻana o ka proton ma mua o ke au pulsed. Hōʻike nā diode PiN me ka inikini proton i nā ʻano hoʻoponopono e like me nā diode me ka ʻole o ka inikini proton, ʻoiai ua kaʻana like ʻia nā ʻano IV ma waena o nā diode. No ka hōʻike ʻana i ka ʻokoʻa ma waena o nā kūlana inikini, ua hoʻolālā mākou i ke alapine voltage ma kahi density o ke au i mua o 2.5 A/cm2 (e like me 100 mA) ma ke ʻano he kiʻi helu e like me ka mea i hōʻike ʻia ma ke Kiʻi 2. Hōʻike pū ʻia ke kiʻikuhi i hoʻokokoke ʻia e kahi hoʻolaha maʻamau e kahi laina kiko. laina. E like me ka mea i ʻike ʻia mai nā piko o nā kiʻikuhi, piʻi iki ka kūʻē ma nā doses proton o 1014 a me 1016 cm-2, ʻoiai ʻo ka diode PiN me ka dose proton o 1012 cm-2 e hōʻike ana i nā ʻano like me ka ʻole o ka hoʻokomo ʻana o ka proton. Ua hana pū mākou i ka hoʻokomo ʻana o ka proton ma hope o ka hana ʻana o nā diode PiN ʻaʻole i hōʻike like i ka electroluminescence ma muli o ka pōʻino i hana ʻia e ka hoʻokomo ʻana o ka proton e like me ka mea i hōʻike ʻia ma ke Kiʻi S1 e like me ka mea i wehewehe ʻia ma nā haʻawina mua37,38,39. No laila, ʻo ka annealing ma 1600 °C ma hope o ka hoʻokomo ʻana o nā ion Al he hana pono ia e hana i nā mea hana e hoʻāla i ka mea hoʻokipa Al, hiki ke hoʻoponopono i ka pōʻino i hana ʻia e ka hoʻokomo ʻana o ka proton, ka mea e like ai nā CVC ma waena o nā diode PiN proton i hoʻokomo ʻia a me nā mea i hoʻokomo ʻole ʻia. Hōʻike pū ʻia ke alapine o ke au hope ma -5 V ma ke Kiʻi S2, ʻaʻohe ʻokoʻa koʻikoʻi ma waena o nā diode me ka ʻole o ka injection proton.
Nā ʻano volt-ampere o nā diode PiN me a me ka ʻole o nā protons i hoʻokomo ʻia ma ka mahana o ka lumi. Hōʻike ka moʻolelo i ka nui o nā protons.
ʻO ke alapine uila ma ke au pololei 2.5 A/cm2 no nā diode PiN me nā proton i hoʻokomo ʻia a me nā proton i hoʻokomo ʻole ʻia. Pili ka laina kiko i ka hoʻolaha maʻamau.
Ma ke kiʻi 3 e hōʻike ana i kahi kiʻi EL o kahi diode PiN me ka nui o ke au o 25 A/cm2 ma hope o ke ana uila. Ma mua o ka hoʻopili ʻana i ke kaumaha o ke au pulsed, ʻaʻole i ʻike ʻia nā wahi ʻeleʻele o ka diode, e like me ka mea i hōʻike ʻia ma ke Kiʻi 3. C2. Eia nō naʻe, e like me ka mea i hōʻike ʻia ma ke kiʻi 3a, i loko o kahi diode PiN me ka ʻole o ka hoʻokomo ʻana o ka proton, ua ʻike ʻia kekahi mau wahi ʻeleʻele me nā lihi māmā ma hope o ka hoʻopili ʻana i kahi ana uila. Ua ʻike ʻia kēlā mau wahi ʻeleʻele ʻano koʻokoʻo i nā kiʻi EL no 1SSF e hoʻolōʻihi ana mai ka BPD i loko o ka substrate28,29. Akā, ua ʻike ʻia kekahi mau hewa stacking i hoʻonui ʻia i loko o nā diode PiN me nā proton i hoʻokomo ʻia, e like me ka mea i hōʻike ʻia ma ke Kiʻi 3b–d. Ma ka hoʻohana ʻana i ka topography X-ray, ua hōʻoia mākou i ke alo o nā PR e hiki ke neʻe mai ka BPD a i ka substrate ma ka periphery o nā pilina ma ka diode PiN me ka ʻole o ka injection proton (Kiʻi 4: kēia kiʻi me ka ʻole o ka wehe ʻana i ka electrode luna (kiʻi ʻia, ʻaʻole ʻike ʻia ʻo PR ma lalo o nā electrodes). No laila, ʻo ka wahi ʻeleʻele ma ke kiʻi EL e pili ana i kahi 1SSF BPD i hoʻonui ʻia i loko o ka substrate. Hōʻike ʻia nā kiʻi EL o nā diode PiN ʻē aʻe i hoʻouka ʻia ma nā Kiʻi 1 a me 2. Hōʻike pū ʻia nā wikiō S3-S6 me a me nā wahi ʻeleʻele i hoʻonui ʻia (nā kiʻi EL e loli ana i ka manawa o nā diode PiN me ka ʻole o ka injection proton a hoʻokomo ʻia ma 1014 cm-2) ma ka ʻIke Hoʻohui.
Nā kiʻi EL o nā diode PiN ma 25 A/cm2 ma hope o 2 mau hola o ke kaumaha uila (a) me ka ʻole o ke kau ʻana o ka proton a me nā dosis i kau ʻia o (b) 1012 cm-2, (c) 1014 cm-2 a me (d) 1016 cm-2 protons.
Ua helu mākou i ka nui o ka 1SSF i hoʻonui ʻia ma ka helu ʻana i nā wahi ʻeleʻele me nā lihi ʻālohilohi i loko o ʻekolu mau diode PiN no kēlā me kēia kūlana, e like me ka mea i hōʻike ʻia ma ke Kiʻi 5. Ke emi nei ka nui o ka 1SSF i hoʻonui ʻia me ka hoʻonui ʻana i ka nui o ka proton, a ʻoiai ma kahi nui o 1012 cm-2, ʻoi aku ka haʻahaʻa o ka nui o ka 1SSF i hoʻonui ʻia ma mua o kahi diode PiN i hoʻokomo ʻole ʻia.
Ua hoʻonui ʻia ka nui o nā diode SF PiN me a me ka ʻole o ka hoʻokomo ʻana o ka proton ma hope o ka hoʻouka ʻana me kahi au pulsed (ua loaʻa i kēlā me kēia mokuʻāina ʻekolu mau diode i hoʻouka ʻia).
ʻO ka hoʻopōkole ʻana i ke ola o ka mea lawe e hoʻopilikia pū i ka hoʻopau ʻana i ka hoʻonui ʻana, a ʻo ka inikini proton e hoʻemi ana i ke ola o ka mea lawe32,36. Ua ʻike mākou i ke ola o ka mea lawe ma kahi papa epitaxial 60 µm ka mānoanoa me nā protons i hoʻokomo ʻia o 1014 cm-2. Mai ke ola mua o ka mea lawe, ʻoiai ke hoʻemi nei ka implant i ka waiwai i ~ 10%, hoʻihoʻi ka annealing ma hope i ~ 50%, e like me ka mea i hōʻike ʻia ma ke Kiʻi S7. No laila, ʻo ke ola o ka mea lawe, i hoʻemi ʻia ma muli o ka hoʻokomo ʻana o ka proton, ua hoʻihoʻi ʻia e ka annealing wela kiʻekiʻe. ʻOiai ʻo ka emi ʻana o 50% i ke ola o ka mea lawe e kāohi pū i ka hoʻolaha ʻana o nā hewa stacking, ʻo nā ʻano I – V, ka mea maʻamau e hilinaʻi nei i ke ola o ka mea lawe, hōʻike wale i nā ʻokoʻa liʻiliʻi ma waena o nā diode i hoʻokomo ʻia a me nā diode i hoʻokomo ʻole ʻia. No laila, ke manaʻoʻiʻo nei mākou he kuleana ko PD anchoring i ka pale ʻana i ka hoʻonui ʻana o 1SSF.
ʻOiai ʻaʻole i ʻike ʻo SIMS i ka hydrogen ma hope o ka annealing ma 1600°C, e like me ka mea i hōʻike ʻia ma nā haʻawina mua, ua ʻike mākou i ka hopena o ka hoʻokomo ʻana o ka proton i ka hoʻopau ʻana i ka hoʻonui ʻana o 1SSF, e like me ka mea i hōʻike ʻia ma nā Kiʻi 1 a me 4. 3, 4. No laila, ke manaʻoʻiʻo nei mākou ua hoʻopaʻa ʻia ka PD e nā ʻātoma hydrogen me ka density ma lalo o ka palena ʻike o SIMS (2 × 1016 cm-3) a i ʻole nā hemahema kiko i hoʻokumu ʻia e ka implantation. Pono e hoʻomaopopo ʻia ʻaʻole mākou i hōʻoia i ka hoʻonui ʻana o ke kū'ē ma ka moku'āina ma muli o ka elongation o 1SSF ma hope o ka ukana o kēia manawa surge. Hiki paha kēia ma muli o nā pilina ohmic kūpono ʻole i hana ʻia me ka hoʻohana ʻana i kā mākou kaʻina hana, kahi e hoʻopau ʻia i ka wā e hiki mai ana.
I ka hopena, ua hoʻomohala mākou i kahi ʻano hana quenching no ka hoʻonui ʻana i ka BPD i 1SSF i loko o nā diode 4H-SiC PiN me ka hoʻohana ʻana i ka proton implantation ma mua o ka hana ʻana o ka hāmeʻa. ʻAʻole nui ka hōʻino ʻana o ke ʻano I-V i ka wā o ka hoʻokomo ʻana o ka proton, ʻoiai ma kahi proton dose o 1012 cm-2, akā he mea nui ka hopena o ke kāohi ʻana i ka hoʻonui ʻana o 1SSF. ʻOiai ma kēia haʻawina ua hana mākou i nā diode PiN 10 µm mānoanoa me ka hoʻokomo ʻana o ka proton i ka hohonu o 10 µm, hiki nō ke hoʻomaikaʻi hou aku i nā kūlana hoʻokomo a hoʻopili iā lākou e hana i nā ʻano hāmeʻa 4H-SiC ʻē aʻe. Pono e noʻonoʻo ʻia nā kumukūʻai hou aʻe no ka hana ʻana o ka hāmeʻa i ka wā o ka hoʻokomo ʻana o ka proton, akā e like lākou me nā mea no ka hoʻokomo ʻana o ka ion alumini, ʻo ia ke kaʻina hana nui no nā hāmeʻa mana 4H-SiC. No laila, ʻo ka hoʻokomo ʻana o ka proton ma mua o ka hana ʻana o ka hāmeʻa he ʻano hiki ke hana i nā hāmeʻa mana bipolar 4H-SiC me ka ʻole o ka degeneration.
Ua hoʻohana ʻia kahi wafer ʻano-n 4H-SiC 4-'īniha me ka mānoanoa o ka papa epitaxial o 10 µm a me kahi ʻano doping donor o 1 × 1016 cm–3 ma ke ʻano he laʻana. Ma mua o ka hana ʻana i ka hāmeʻa, ua hoʻokomo ʻia nā ion H+ i loko o ka pā me ka ikehu hoʻolalelale o 0.95 MeV ma ka mahana o ka lumi a hiki i ka hohonu o kahi 10 μm ma kahi kihi maʻamau i ka ʻili o ka pā. I ka wā o ka hoʻokomo ʻana o ka proton, ua hoʻohana ʻia kahi mask ma luna o kahi pā, a he mau ʻāpana ko ka pā me ka ʻole a me ka nui o ka proton o 1012, 1014, a i ʻole 1016 cm-2. A laila, ua hoʻokomo ʻia nā ion Al me nā nui o ka proton o 1020 a me 1017 cm–3 ma luna o ka wafer holoʻokoʻa a hiki i ka hohonu o 0–0.2 µm a me 0.2–0.5 µm mai ka ʻili, a ukali ʻia e ka annealing ma 1600°C e hana i kahi pāpale kalapona e hana i ka papa ap. -ʻano. Ma hope mai, ua waiho ʻia kahi pilina Ni ma ka ʻaoʻao hope ma ka ʻaoʻao substrate, ʻoiai ua waiho ʻia kahi pilina Ti/Al ma ka ʻaoʻao mua he 2.0 mm × 2.0 mm i hoʻokumu ʻia e ka photolithography a me kahi kaʻina hana ʻili ma ka ʻaoʻao epitaxial. ʻO ka hope loa, ua hana ʻia ka hoʻomehana ʻana o ka pilina ma ka mahana o 700 °C. Ma hope o ka ʻoki ʻana i ka wafer i loko o nā ʻāpana, ua hana mākou i ke ʻano o ke koʻikoʻi a me ka hoʻopili ʻana.
Ua nānā ʻia nā ʻano I – V o nā diode PiN i hana ʻia me ka hoʻohana ʻana i kahi mea loiloi parameter semiconductor HP4155B. Ma ke ʻano he pilikia uila, ua hoʻokomo ʻia kahi au pulsed 10-millisecond o 212.5 A/cm2 no 2 mau hola ma ke alapine o 10 pulses/sec. I ko mākou koho ʻana i kahi density au haʻahaʻa a i ʻole ke alapine, ʻaʻole mākou i ʻike i ka hoʻonui ʻana o 1SSF ʻoiai i loko o kahi diode PiN me ka ʻole o ka injection proton. I ka wā o ka volta uila i hoʻopili ʻia, ʻo ka mahana o ka diode PiN ma kahi o 70 ° C me ka ʻole o ka hoʻomehana ʻana i manaʻo ʻia, e like me ka mea i hōʻike ʻia ma ke Kiʻi S8. Ua loaʻa nā kiʻi Electroluminescent ma mua a ma hope o ke kaumaha uila ma kahi density au o 25 A/cm2. Synchrotron reflection grazing incidence X-ray topography me ka hoʻohana ʻana i kahi kukuna X-ray monochromatic (λ = 0.15 nm) ma ke Aichi Synchrotron Radiation Center, ʻo ka vector ag ma BL8S2 he -1-128 a i ʻole 11-28 (e ʻike i ka ref. 44 no nā kikoʻī). ).
Ua unuhi ʻia ke alapine uila ma kahi mānoanoa o ke au i mua o 2.5 A/cm2 me kahi manawa o 0.5 V ma ke kiʻi 2 e like me ka CVC o kēlā me kēia kūlana o ka diode PiN. Mai ka waiwai awelika o ka Vave stress a me ka deviation maʻamau σ o ke kaumaha, ke kaha kiʻi nei mākou i kahi piʻo hoʻolaha maʻamau ma ke ʻano o kahi laina kiko ma ke Kiʻi 2 me ka hoʻohana ʻana i ka hoʻohālikelike aʻe:
Werner, MR & Fahrner, WR Loiloi no nā mea hana, nā microsensors, nā ʻōnaehana a me nā mea hana no nā noi wela kiʻekiʻe a me nā noi kaiapuni ʻino. Werner, MR & Fahrner, WR Loiloi no nā mea hana, nā microsensors, nā ʻōnaehana a me nā mea hana no nā noi wela kiʻekiʻe a me nā noi kaiapuni ʻino.ʻO Werner, MR lāua ʻo Farner, WR Ka nānā ʻana i nā mea hana, nā microsensors, nā ʻōnaehana a me nā mea hana no nā noi ma ke kiʻekiʻe o ka mahana a me nā wahi ʻino. Werner, MR & Fahrner, WR 对用于高温和恶劣环境应用的材料、微传感器、系统和设备的评记。 ʻO Werner, MR & Fahrner, WR Loiloi o nā mea hana, nā microsensors, nā ʻōnaehana a me nā mea hana no nā mahana kiʻekiʻe a me nā noi kaiapuni maikaʻi ʻole.ʻO Werner, MR lāua ʻo Farner, WR Ka nānā ʻana i nā mea hana, nā microsensors, nā ʻōnaehana a me nā mea hana no nā noi ma nā mahana kiʻekiʻe a me nā kūlana ʻino.IEEE Trans. Nā mea uila ʻoihana. 48, 249–257 (2001).
ʻO Kimoto, T. & Cooper, JA Nā Kumu o ka ʻenehana Silicon Carbide Nā Kumu o ka ʻenehana Silicon Carbide: Ka ulu ʻana, ke ʻano, nā hāmeʻa a me nā noi Vol. ʻO Kimoto, T. & Cooper, JA Nā Kumu o ka ʻenehana Silicon Carbide Nā Kumu o ka ʻenehana Silicon Carbide: Ka ulu ʻana, ke ʻano, nā hāmeʻa a me nā noi Vol.ʻO Kimoto, T. lāua ʻo Cooper, JA Nā kumu o ka ʻenehana Silicon Carbide Nā kumu o ka ʻenehana Silicon Carbide: ka ulu ʻana, nā ʻano, nā mea hana a me nā noi Vol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 ʻO Kimoto, T. & Cooper, JA Kumu ʻenehana silicon o ke kalapona Kumu ʻenehana silicon o ke kalapona: ulu ʻana, wehewehe ʻana, lako a me ka nui o ka noi.ʻO Kimoto, T. lāua ʻo Cooper, J. Nā kumu o ka ʻenehana Silicon Carbide Nā kumu o ka ʻenehana Silicon Carbide: ka ulu ʻana, nā ʻano, nā lako a me nā noi Vol.252 (Wiley Singapore Pte Ltd, 2014).
ʻO Veliadis, V. Ke kālepa nui ʻana o SiC: Status Quo a me nā pilikia e lanakila ʻia. alma mater. ka ʻepekema. Forum 1062, 125–130 (2022).
ʻO Broughton, J., Smet, V., Tummala, RR & Joshi, YK Ka loiloi o nā ʻenehana hoʻopili wela no nā mea uila mana kaʻa no nā kumu traction. ʻO Broughton, J., Smet, V., Tummala, RR & Joshi, YK Ka loiloi o nā ʻenehana hoʻopili wela no nā mea uila mana kaʻa no nā kumu traction.ʻO Broughton, J., Smet, V., Tummala, RR lāua ʻo Joshi, YK Ka nānā ʻana i nā ʻenehana hoʻopili wela no nā mea uila mana kaʻa no nā kumu traction. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的的汽车电力电子热封装技术的回顾。 Broughton, J., Smet, V., Tummala, RR & Joshi, YKʻO Broughton, J., Smet, V., Tummala, RR lāua ʻo Joshi, YK Ka nānā ʻana i ka ʻenehana hoʻopili wela no nā mea uila mana kaʻa no nā kumu traction.J. Electron. Pūʻolo. trance. ASME 140, 1-11 (2018).
ʻO Sato, K., Kato, H. & Fukushima, T. Ka hoʻomohala ʻana o ka ʻōnaehana traction i hoʻopili ʻia e SiC no nā kaʻaahi wikiwiki Shinkansen o ka hanauna hou. ʻO Sato, K., Kato, H. & Fukushima, T. Ka hoʻomohala ʻana o ka ʻōnaehana traction i hoʻopili ʻia e SiC no nā kaʻaahi wikiwiki Shinkansen o ka hanauna hou.ʻO Sato K., Kato H. lāua ʻo Fukushima T. Ka hoʻomohala ʻana i kahi ʻōnaehana traction SiC i hoʻopili ʻia no nā kaʻaahi Shinkansen wikiwiki o ka hanauna e hiki mai ana.ʻO Sato K., Kato H. lāua ʻo Fukushima T. Ka Hoʻomohala ʻana i ka ʻōnaehana traction no nā noi SiC no nā kaʻaahi Shinkansen wikiwiki o ka hanauna hou. Appendix IEEJ J. Ind. 9, 453–459 (2020).
ʻO Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Nā pilikia e hoʻokō ai i nā polokalamu mana SiC hilinaʻi loa: Mai ke kūlana o kēia manawa a me nā pilikia o nā wafers SiC. ʻO Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Nā pilikia e hoʻokō ai i nā polokalamu mana SiC hilinaʻi loa: Mai ke kūlana o kēia manawa a me nā pilikia o nā wafers SiC.ʻO Senzaki, J., Hayashi, S., Yonezawa, Y. a me Okumura, H. Nā pilikia i ka hoʻokō ʻana o nā mea hana mana SiC hilinaʻi loa: e hoʻomaka ana mai ke kūlana o kēia manawa a me ka pilikia o ka wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. 实现高可靠性SiC 功率器件的挑战：从SiC 晶圆的现状和问颜。 Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. ʻO ka luʻi o ka loaʻa ʻana o ka hilinaʻi kiʻekiʻe ma nā mea mana SiC: mai SiC 晶圆的电视和问题设计。ʻO Senzaki J, Hayashi S, Yonezawa Y. lāua ʻo Okumura H. Nā pilikia i ka hoʻomohala ʻana i nā mea hana mana hilinaʻi kiʻekiʻe e pili ana i ka silicon carbide: kahi loiloi o ke kūlana a me nā pilikia e pili ana me nā wafers silicon carbide.Ma ka 2018 IEEE International Symposium on Reliability Physics (IRPS). (Senzaki, J. et al. eds.) 3B.3-1-3B.3-6 (IEEE, 2018).
ʻO Kim, D. & Sung, W. Hoʻomaikaʻi ʻia ka paʻakikī pōkole no ka 1.2kV 4H-SiC MOSFET me ka hoʻohana ʻana i kahi luawai P hohonu i hoʻokō ʻia e ka hoʻokomo ʻana i ke kahawai. ʻO Kim, D. & Sung, W. Hoʻomaikaʻi ʻia ka paʻakikī pōkole no ka 1.2kV 4H-SiC MOSFET me ka hoʻohana ʻana i kahi luawai P hohonu i hoʻokō ʻia e ka hoʻokomo ʻana i ke kahawai.ʻO Kim, D. lāua ʻo Sung, V. Hoʻomaikaʻi ʻia ka palekana pōkole no kahi 1.2 kV 4H-SiC MOSFET me ka hoʻohana ʻana i kahi luawai P hohonu i hoʻokō ʻia e ke kau ʻana o ke kahawai. Kim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性。 Kim, D. & Sung, W. P 阱提高了1.2kV 4H-SiC MOSFETʻO Kim, D. lāua ʻo Sung, V. Hoʻomaikaʻi ʻia ka hoʻomanawanui pōkole o 1.2 kV 4H-SiC MOSFET me ka hoʻohana ʻana i nā lua P hohonu ma o ke kau ʻana o ke kahawai.Nā Hāmeʻa Uila IEEE Lett. 42, 1822–1825 (2021).
ʻO Skowronski M. et al. Ka neʻe ʻana o nā hemahema i hoʻonui ʻia e ka recombination i nā diode pn 4H-SiC i hoʻohālikelike ʻia i mua. J. Application. physics. 92, 4699–4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Hoʻololi dislocation i loko o ka 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Hoʻololi dislocation i loko o ka 4H silicon carbide epitaxy.ʻO Ha S., Meszkowski P., Skowronski M. lāua ʻo Rowland LB ka hoʻololi ʻana o ka dislocation i ka wā o ka 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBHoʻololi dislocation 4H i loko o ka epitaxy silicon carbide.J. Crystal. Ka ulu ʻana 244, 257–266 (2002).
ʻO Skowronski, M. & Ha, S. Ka hōʻino ʻia ʻana o nā mea hana bipolar hexagonal silicon-carbide. ʻO Skowronski, M. & Ha, S. Ka hōʻino ʻia ʻana o nā mea hana bipolar hexagonal silicon-carbide.ʻO Skowronski M. lāua ʻo Ha S. Ka hōʻino ʻana o nā mea hana bipolar hexagonal e pili ana i ka silicon carbide. Skowronski, M. & Ha, S. 六方碳化硅基双极器件的降解。 ʻO Skowronski M. & Ha S.ʻO Skowronski M. lāua ʻo Ha S. Ka hōʻino ʻana o nā mea hana bipolar hexagonal e pili ana i ka silicon carbide.J. Noi. physics 99, 011101 (2006).
ʻAgarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. ʻAgarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.ʻO Agarwal A., ʻo Fatima H., ʻo Heini S. lāua ʻo Ryu S.-H. ʻAgarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. ʻAgarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.ʻO Agarwal A., ʻo Fatima H., ʻo Heini S. lāua ʻo Ryu S.-H.He ʻano hana hoʻohaʻahaʻa hou no nā MOSFET mana SiC kiʻekiʻe-voltage. IEEE Electronic Devices Lett. 28, 587–589 (2007).
ʻO Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Ma ka ikaika hoʻokele no ka neʻe ʻana o ka hewa stacking i hoʻokomo ʻia e ka recombination ma 4H–SiC. ʻO Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Ma ka ikaika hoʻokele no ka neʻe ʻana o ka hewa stacking i hoʻokomo ʻia e ka recombination ma 4H-SiC.ʻO Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, a me Hobart, KD Ma ka ikaika hoʻokele o ka neʻe ʻana o ka hewa stacking i hoʻokomo ʻia e ka recombination ma 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力。 Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDʻO Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, a me Hobart, KD, Ma ka mana hoʻokele o ka neʻe ʻana o ka hewa stacking i hoʻokomo ʻia e ka recombination ma 4H-SiC.J. Noi. physics. 108, 044503 (2010).
ʻO Iijima, A. & Kimoto, T. Ke kumu hoʻohālike ikehu uila no ka hoʻokumu ʻana o ka hewa hoʻopaʻa Shockley hoʻokahi i nā kristal 4H-SiC. ʻO Iijima, A. & Kimoto, T. Ke kumu hoʻohālike ikehu uila no ka hoʻokumu ʻana o ka hewa hoʻopaʻa Shockley hoʻokahi i nā kristal 4H-SiC.ʻO Iijima, A. lāua ʻo Kimoto, T. Ke kumu hoʻohālike ikehu uila o ka hoʻokumu ʻana o nā kīnā hoʻokahi o ka hoʻopili ʻana o Shockley i nā kristal 4H-SiC. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型。 ʻO Iijima, A. & Kimoto, T. Ke kumu hoʻohālike ikehu uila o ka hoʻokumu hewa hoʻokahi o Shockley i loko o ke kristal 4H-SiC.ʻO Iijima, A. lāua ʻo Kimoto, T. Ke kumu hoʻohālike ikehu uila o ka hoʻokumu ʻana o ka Shockley kīnā hoʻokahi i hoʻopaʻa ʻia i loko o nā kristal 4H-SiC.J. Noi. physics 126, 105703 (2019).
ʻO Iijima, A. & Kimoto, T. Ka manaʻo o ke kūlana koʻikoʻi no ka hoʻonui ʻana/ka hoʻemi ʻana o nā hewa hoʻopaʻa Shockley hoʻokahi i nā diode 4H-SiC PiN. ʻO Iijima, A. & Kimoto, T. Ka manaʻo o ke kūlana koʻikoʻi no ka hoʻonui ʻana/ka hoʻemi ʻana o nā hewa hoʻopaʻa Shockley hoʻokahi i nā diode 4H-SiC PiN.ʻO Iijima, A. lāua ʻo Kimoto, T. Ka manaʻo o ke kūlana koʻikoʻi no ka hoʻonui ʻana/kaomi ʻana o nā hemahema hoʻopaʻa Shockley hoʻokahi ma 4H-SiC PiN-diodes. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件。 ʻO Iijima, A. & Kimoto, T. Ka manaʻo o nā kūlana hoʻonui/ʻuʻuku o ka papa hoʻopaʻa Shockley hoʻokahi i nā diode 4H-SiC PiN.ʻO Iijima, A. lāua ʻo Kimoto, T. Ka manaʻo o nā kūlana koʻikoʻi no ka hoʻonui ʻana/kaomi ʻana o ka Shockley hoʻopaʻa kīnā hoʻokahi ma 4H-SiC PiN-diodes.noi ʻana i ka ʻepekema Wright. 116, 092105 (2020).
ʻO Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Kumu hoʻohālike hana luawai Quantum no ka hoʻokumu ʻana o kahi hewa hoʻopaʻa Shockley hoʻokahi i loko o kahi kristal 4H-SiC ma lalo o nā kūlana kaulike ʻole. ʻO Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Kumu hoʻohālike hana luawai Quantum no ka hoʻokumu ʻana o kahi hewa hoʻopaʻa Shockley hoʻokahi i loko o kahi kristal 4H-SiC ma lalo o nā kūlana kaulike ʻole.ʻO Mannen Y., ʻo Shimada K., ʻo Asada K., a me ʻOtani N. He kumu hoʻohālike luawai quantum no ka hoʻokumu ʻana o kahi hewa hoʻopaʻa Shockley hoʻokahi i loko o kahi kristal 4H-SiC ma lalo o nā kūlana ʻaʻohe kaulike.ʻO Mannen Y., Shimada K., Asada K. lāua ʻo Otani N. Kumu hoʻohālikelike pilina luawai Quantum no ka hoʻokumu ʻana o nā hewa hoʻopaʻa Shockley hoʻokahi i loko o nā kristal 4H-SiC ma lalo o nā kūlana ʻaʻohe kaulike. J. Application. physics. 125, 085705 (2019).
ʻO Galeckas, A., Linnros, J. & Pirouz, P. Nā hewa stacking i hoʻokomo ʻia e ka recombination: Nā hōʻike no kahi ʻano hana maʻamau i ka hexagonal SiC. ʻO Galeckas, A., Linnros, J. & Pirouz, P. Nā hewa stacking i hoʻokomo ʻia e ka recombination: Nā hōʻike no kahi ʻano hana maʻamau i ka hexagonal SiC.ʻO Galeckas, A., Linnros, J. lāua ʻo Pirouz, P. Nā hemahema hoʻopili i hoʻokumu ʻia e ka recombination: Nā hōʻike no kahi ʻano hana maʻamau i ka Hexagonal SiC. Galeckas, A., Linnros, J. & Pirouz, P. 复合诱导的堆垛层错：六方SiC 中一般机制的证据。 ʻO Galeckas, A., Linnros, J. & Pirouz, P. Nā hōʻike no ka ʻano hana maʻamau o ka papa hoʻopili induction composite: SiC.ʻO Galeckas, A., Linnros, J. lāua ʻo Pirouz, P. Nā hemahema hoʻopili i hoʻokumu ʻia e ka recombination: Nā hōʻike no kahi ʻano hana maʻamau i ka Hexagonal SiC.ke kālaikūlohea ʻo Pastor Wright. 96, 025502 (2006).
ʻO Ishikawa, Y., Sudo, M., Yao, Y.-Z., Sugawara, Y. & Kato, M. Ka hoʻonui ʻia ʻana o kahi hewa hoʻopaʻa Shockley hoʻokahi i loko o kahi papa epitaxial 4H-SiC (11 2 ¯0) i hoʻokumu ʻia e ka irradiation kukuna electron.ʻIshikawa, Y., M. Sudo, Y.-Z kukuna hoʻomālamalama.Ishikawa, Y., Sudo M., Y.-Z Psychology.Pahu, Ю., М. Судо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Nānā ʻana i ka hui hou ʻana o ka mea lawe ma nā hewa hoʻopaʻa Shockley hoʻokahi a ma nā dislocations hapa ma 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Nānā ʻana i ka hui hou ʻana o ka mea lawe ma nā hewa hoʻopaʻa Shockley hoʻokahi a ma nā dislocations hapa ma 4H-SiC.ʻO Kato M., ʻO Katahira S., ʻO Itikawa Y., ʻO Harada S. lāua ʻo Kimoto T. Nānā ʻana i ka Hoʻohuihui ʻana o ka Mea Lawe ma nā Kiki Hoʻopaʻa Shockley Hoʻokahi a me nā Dislocations hapa ma 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley 堆垛层错和4H-SiC 部分位错中载流子复合的观察。 Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley stacking stacking和4H-SiC partial 位错中载流子去生的可以。ʻO Kato M., ʻO Katahira S., ʻO Itikawa Y., ʻO Harada S. lāua ʻo Kimoto T. Nānā ʻana i ka Hoʻohuihui ʻana o ka Mea Lawe ma nā Kiki Hoʻopaʻa Shockley Hoʻokahi a me nā Dislocations hapa ma 4H-SiC.J. Noi. physics 124, 095702 (2018).
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Zhang, Z., Moulton, E. & Sudarshan, TS ʻAno hana o ka hoʻopau ʻana i nā dislocations mokulele basal i nā kiʻiʻoniʻoni lahilahi SiC e ka epitaxy ma kahi substrate i kālai ʻia. Zhang, Z., Moulton, E. & Sudarshan, TS ʻAno hana o ka hoʻopau ʻana i nā dislocations mokulele basal i nā kiʻiʻoniʻoni lahilahi SiC e ka epitaxy ma kahi substrate i kālai ʻia.ʻO Zhang Z., Moulton E. lāua ʻo Sudarshan TS Mechanism o ka hoʻopau ʻana i nā dislocations mokulele kumu i nā kiʻiʻoniʻoni lahilahi SiC e ka epitaxy ma kahi substrate i kālai ʻia. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制。 Zhang, Z., Moulton, E. & Sudarshan, TS Ke ʻano o ka hoʻopau ʻana i ka ʻili lahilahi SiC ma ke kālai ʻana i ka substrate.ʻO Zhang Z., Moulton E. lāua ʻo Sudarshan TS Mechanism o ka hoʻopau ʻana i nā dislocations mokulele kumu i nā kiʻiʻoniʻoni lahilahi SiC e ka epitaxy ma nā substrates i kālai ʻia.ka noi ʻana i ka physics Wright. 89, 081910 (2006).
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Zhang, X. & Tsuchida, H. Ka hoʻololi ʻana o nā dislocations mokulele basal i nā dislocations lihi threading ma 4H-SiC epilaiers e ka annealing wela kiʻekiʻe. Zhang, X. & Tsuchida, H. Ka hoʻololi ʻana o nā dislocations mokulele basal i nā dislocations lihi threading ma 4H-SiC epilaiers e ka annealing wela kiʻekiʻe.Zhang, X. lāua ʻo Tsuchida, H. Ka hoʻololi ʻana o nā dislocations mokulele basal i nā dislocations lihi threading ma nā papa epitaxial 4H-SiC e ka annealing wela kiʻekiʻe. Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiC 外延层中的基面位错转化为螺纹刃位错。 Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiCZhang, X. lāua ʻo Tsuchida, H. Ka hoʻololi ʻana o nā dislocations o ka mokulele kumu i nā dislocations o ka lihi filament i nā papa epitaxial 4H-SiC e ka annealing wela kiʻekiʻe.J. Noi. physics. 111, 123512 (2012).
Song, H. & Sudarshan, TS Ka hoʻololi ʻana o ka dislocation o ka mokulele basal kokoke i ka interface epilayer/substrate ma ka ulu ʻana o ka epitaxial o 4° off-axis 4H–SiC. Song, H. & Sudarshan, TS Ka hoʻololi ʻana o ka dislocation o ka mokulele basal kokoke i ka interface epilayer/substrate ma ka ulu ʻana o ka epitaxial o 4° off-axis 4H–SiC.Song, H. lāua ʻo Sudarshan, TS Ka hoʻololi ʻana o nā dislocations mokulele basal kokoke i ka epitaxial layer/substrate interface i ka wā o ka ulu ʻana o ka epitaxial ma waho o ke axis o 4H–SiC. Song, H. & Sudarshan, TS 在4° 离轴4H-SiC 外延生长中外延层/衬底界面附近的基底平面位错转捯。 Mele, H. & Sudarshan, TS 在4° 离轴4H-SiC Mele, H. & Sudarshan, TSKa hoʻololi ʻana o ka dislocation planar o ka substrate kokoke i ka papa epitaxial/palena substrate i ka wā o ka ulu ʻana o ka epitaxial o 4H-SiC ma waho o ke axis 4°.J. Crystal. Ka ulu ʻana 371, 94–101 (2013).
ʻO Konishi, K. et al. Ma ke au kiʻekiʻe, ʻo ka hoʻolaha ʻana o ka hewa stacking dislocation plane basal ma nā papa epitaxial 4H-SiC e hoʻololi i nā dislocations lihi filament. J. Application. physics. 114, 014504 (2013).
Konishi, K. et al. Hoʻolālā i nā papa epitaxial no nā SiC MOSFET bipolar non-degradable ma ka ʻike ʻana i nā wahi nucleation hewa stacking i hoʻonui ʻia i ka hana X-ray topographic analysis. AIP Advanced 12, 035310 (2022).
ʻO Lin, S. et al. Ka hopena o ke ʻano dislocation plane basal ma ka hoʻolaha ʻana o kahi hewa stacking ʻano Shockley hoʻokahi i ka wā o ka palaho o ke au i mua o nā diode pine 4H-SiC. Iapana. J. Application. physics. 57, 04FR07 (2018).
ʻO Tahara, T., et al. Hoʻohana ʻia ke ola pōkole o ka mea lawe liʻiliʻi i loko o nā epilaiers 4H-SiC waiwai i ka nitrogen e kāohi i nā hewa stacking i nā diode PiN. J. Application. physics. 120, 115101 (2016).
ʻO Tahara, T. et al. Ka hilinaʻi ʻana o ka mea lawe i hoʻokomo ʻia i ka hoʻolaha hewa hoʻokahi o Shockley i nā diode 4H-SiC PiN. J. Application. Physics 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. ʻŌnaehana FCA microscopic no ke ana ʻana i ke ola o ka mea lawe i hoʻoholo ʻia ma ka hohonu ma SiC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. ʻŌnaehana FCA microscopic no ke ana ʻana i ke ola o ka mea lawe i hoʻoholo ʻia ma ka hohonu ma SiC.Mei, S., Tawara, T., Tsuchida, H. a me Kato, M. ʻŌnaehana Microscopic FCA no nā ana o ke ola o ka mea lawe i hoʻoholo ʻia i ka hohonu ma Silicon Carbide. Mae, S.、Tawara, T.、Tsuchida, H. & Kato, M. 用于SiC 中深度分辨载流子寿命测量的显微FCA 系统。 Mae, S.、Tawara, T.、Tsuchida, H. & Kato, M. No ka SiC hohonu-hohonu.ʻO Mei S., Tawara T., Tsuchida H. lāua ʻo Kato M. ʻŌnaehana Micro-FCA no nā ana o ke ola o ka mea lawe i hoʻoholo ʻia i ka hohonu ma ka silicon carbide.ʻAha kūkā ʻepekema kula 924, 269–272 (2018).
ʻO Hirayama, T. et al. Ua ana ʻia ka hoʻokaʻawale hohonu o nā ola o ka mea lawe ma nā papa epitaxial 4H-SiC mānoanoa me ka ʻole o ka luku ʻana me ka hoʻohana ʻana i ka hoʻonā manawa o ka omo ʻana o ka mea lawe manuahi a me ke kukui i keʻa ʻia. E hoʻololi i ka ʻepekema. mika. 91, 123902 (2020).
Ka manawa hoʻouna: Nov-06-2022
