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An tallata 4H-SiC a matsayin kayan aiki ga na'urorin semiconductor masu ƙarfin lantarki. Duk da haka, amincin na'urorin 4H-SiC na dogon lokaci yana kawo cikas ga aikace-aikacen su, kuma babbar matsalar aminci ta na'urorin 4H-SiC ita ce lalacewar bipolar. Wannan lalacewa ta faru ne sakamakon yaduwar ɓarnar basal plane guda ɗaya (1SSF) a cikin lu'ulu'u 4H-SiC. A nan, muna ba da shawarar wata hanya don danne faɗaɗa 1SSF ta hanyar dasa protons akan wafers epitaxial 4H-SiC. Diodes na PiN da aka ƙera akan wafers tare da dasa proton sun nuna halaye iri ɗaya na wutar lantarki kamar diodes ba tare da dasa proton ba. Sabanin haka, faɗaɗa 1SSF yana da ƙarfi a cikin diode PiN da aka dasa proton. Don haka, dasa protons cikin wafers epitaxial 4H-SiC hanya ce mai inganci don danne lalacewar bipolar na na'urorin semiconductor masu ƙarfin lantarki 4H-SiC yayin da ake ci gaba da aikin na'ura. Wannan sakamakon yana ba da gudummawa ga haɓaka na'urorin 4H-SiC masu aminci sosai.
An san silicon carbide (SiC) sosai a matsayin kayan semiconductor don na'urorin semiconductor masu ƙarfi da mita masu yawa waɗanda zasu iya aiki a cikin mawuyacin yanayi1. Akwai nau'ikan SiC da yawa, waɗanda daga cikinsu 4H-SiC yana da kyawawan halaye na zahiri na na'urar semiconductor kamar babban motsi na electron da ƙarfin filin lantarki mai lalacewa2. Wafers na 4H-SiC masu diamita na inci 6 a halin yanzu ana tallata su kuma ana amfani da su don samar da na'urorin semiconductor masu yawa3. An ƙera tsarin jan hankali na motocin lantarki da jiragen ƙasa ta amfani da na'urorin semiconductor masu ƙarfi na 4H-SiC4.5. Duk da haka, na'urorin 4H-SiC har yanzu suna fama da matsalolin aminci na dogon lokaci kamar lalacewar dielectric ko amincin da'ira na ɗan gajeren lokaci, 6,7 daga cikinsu ɗaya daga cikin mahimman batutuwan aminci shine lalacewar bipolar2,8,9,10,11. An gano wannan lalacewar bipolar sama da shekaru 20 da suka gabata kuma ya daɗe yana da matsala a cikin ƙera na'urorin SiC.
Lalacewar bipolar yana faruwa ne sakamakon lahani ɗaya na Shockley stack defect (1SSF) a cikin lu'ulu'u 4H-SiC tare da basal plane dislocations (BPDs) waɗanda ke yaduwa ta hanyar sake haɗawa da enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Saboda haka, idan aka danne faɗaɗa BPD zuwa 1SSF, ana iya ƙera na'urorin wutar lantarki na 4H-SiC ba tare da lalata bipolar ba. An ruwaito hanyoyi da yawa don danne yaɗuwar BPD, kamar canjin BPD zuwa Thread Edge Dislocation (TED) 20,21,22,23,24. A cikin sabbin wafers na SiC epitaxial, BPD galibi yana cikin substrate kuma ba a cikin epitaxial Layer ba saboda juyawar BPD zuwa TED a lokacin matakin farko na haɓakar epitaxial. Saboda haka, sauran matsalar lalacewar bipolar shine rarraba BPD a cikin substrate 25,26,27. An gabatar da shigar da "layin ƙarfafa haɗin gwiwa" tsakanin layin da aka yi da substrate a matsayin hanya mai inganci don danne faɗaɗa BPD a cikin substrate28, 29, 30, 31. Wannan layin yana ƙara yuwuwar sake haɗa electron-hole pair a cikin layer epitaxial da substrate SiC. Rage adadin nau'ikan electron-hole yana rage ƙarfin tuƙi na REDG zuwa BPD a cikin substrate, don haka layer ƙarfafa haɗin gwiwa na iya danne lalacewar bipolar. Ya kamata a lura cewa saka layer yana haifar da ƙarin farashi wajen samar da wafers, kuma ba tare da saka layer ba yana da wuya a rage adadin nau'ikan electron-hole ta hanyar sarrafa ikon rayuwar mai ɗaukar kaya kawai. Saboda haka, har yanzu akwai buƙatar haɓaka wasu hanyoyin ragewa don cimma daidaito mafi kyau tsakanin farashin kera na'ura da yawan amfanin ƙasa.
Saboda faɗaɗa BPD zuwa 1SSF yana buƙatar motsi na ɓangarorin da suka ɓace (PDs), haɗa PD hanya ce mai kyau don hana lalacewar bipolar. Duk da cewa an bayar da rahoton haɗa PD da ƙazanta na ƙarfe, FPDs a cikin substrates 4H-SiC suna nesa da sama da μm 5 daga saman Layer na epitaxial. Bugu da ƙari, tunda yawan yaɗuwar kowane ƙarfe a cikin SiC ƙarami ne, yana da wahala ga ƙazanta na ƙarfe su yaɗu cikin substrate34. Saboda girman ƙwayar ƙarfe, dasa ion na ƙarfe shima yana da wahala. Sabanin haka, a yanayin hydrogen, mafi sauƙi, ana iya dasa ions (protons) cikin 4H-SiC zuwa zurfin fiye da 10 µm ta amfani da mai haɓaka aji na MeV. Saboda haka, idan dasa proton ya shafi haɗa PD, to ana iya amfani da shi don hana yaɗuwar BPD a cikin substrate. Duk da haka, dasa proton na iya lalata 4H-SiC kuma yana haifar da raguwar aikin na'urar37,38,39,40.
Domin shawo kan lalacewar na'urar saboda dasa proton, ana amfani da annealing mai zafi don gyara lalacewa, kamar hanyar annealing da aka saba amfani da ita bayan dasa ion mai karɓa a cikin sarrafa na'ura1, 40, 41, 42. Duk da cewa secondary ion mass spectrometry (SIMS)43 ya ba da rahoton yaduwar hydrogen saboda annealing mai zafi, yana yiwuwa cewa yawan atom ɗin hydrogen kusa da FD kawai bai isa ya gano pinning na PR ta amfani da SIMS ba. Saboda haka, a cikin wannan binciken, mun dasa protons a cikin wafers na epitaxial 4H-SiC kafin aiwatar da ƙera na'urar, gami da annealing mai zafi. Mun yi amfani da diodes na PiN a matsayin tsarin na'urar gwaji kuma muka ƙera su akan wafers na epitaxial 4H-SiC da aka dasa proton. Sannan muka lura da halayen volt-ampere don nazarin lalacewar aikin na'urar saboda allurar proton. Daga baya, mun lura da faɗaɗa 1SSF a cikin hotunan electroluminescence (EL) bayan amfani da wutar lantarki ga diode na PiN. A ƙarshe, mun tabbatar da tasirin allurar proton akan hana faɗaɗa 1SSF.
A hoto na 1 yana nuna halayen yanzu-ƙarfin lantarki (CVCs) na diodes ɗin PiN a zafin ɗaki a yankuna tare da dasa proton kafin dasawa da kuma ba tare da shi ba. Diodes ɗin PiN tare da allurar proton suna nuna halayen gyarawa iri ɗaya da diodes ba tare da allurar proton ba, duk da cewa halayen IV suna raba tsakanin diodes ɗin. Don nuna bambanci tsakanin yanayin allurar, mun zana mitar ƙarfin lantarki a yawan wutar lantarki na gaba na 2.5 A/cm2 (wanda ya yi daidai da 100 mA) a matsayin zane na ƙididdiga kamar yadda aka nuna a Hoto na 2. Layin da aka kwatanta da rarrabawar al'ada shi ma ana wakilta shi da layin layi mai dige. Kamar yadda za a iya gani daga kololuwar lanƙwasa, juriyar kan-kan-kan yana ƙaruwa kaɗan a allurar proton na 1014 da 1016 cm-2, yayin da diodes ɗin PiN tare da adadin proton na 1012 cm-2 yana nuna kusan halaye iri ɗaya kamar ba tare da dasa proton ba. Mun kuma yi dashen proton bayan ƙera diodes na PiN waɗanda ba su nuna daidaiton lantarki ba saboda lalacewar da dashen proton ya haifar kamar yadda aka nuna a Hoto na S1 kamar yadda aka bayyana a cikin binciken da ya gabata37,38,39. Saboda haka, annealing a 1600 °C bayan dasa Al ions tsari ne mai mahimmanci don ƙera na'urori don kunna mai karɓar Al, wanda zai iya gyara lalacewar da dasa proton ya haifar, wanda ke sa CVCs iri ɗaya tsakanin diodes na proton PiN da aka dasa da waɗanda ba a dasa ba. Hakanan an gabatar da mitar halin yanzu ta baya a -5 V a Hoto na S2, babu wani bambanci mai mahimmanci tsakanin diodes tare da da kuma ba tare da allurar proton ba.
Halayen ƙarfin lantarki na diodes na PiN tare da da kuma ba tare da allurar protons a zafin ɗaki ba. Labarin yana nuna adadin protons.
Mitar ƙarfin lantarki a kan wutar lantarki kai tsaye 2.5 A/cm2 ga diodes na PiN tare da protons da aka allura da waɗanda ba a allura ba. Layin dige-dige ya yi daidai da rarrabawar da aka saba.
A kan hoto na 3 yana nuna hoton EL na diode na PiN tare da yawan wutar lantarki na 25 A/cm2 bayan ƙarfin lantarki. Kafin amfani da nauyin wutar lantarki mai ƙarfi, ba a lura da yankunan duhu na diode ba, kamar yadda aka nuna a Hoto na 3. C2. Duk da haka, kamar yadda aka nuna a hoto na 3a, a cikin diode na PiN ba tare da dasa proton ba, an lura da yankuna masu duhu masu gefuna masu haske bayan amfani da ƙarfin lantarki. Irin waɗannan yankuna masu duhu masu siffar sanda an lura da su a cikin hotunan EL don 1SSF wanda ya fito daga BPD a cikin substrate28,29. Madadin haka, an lura da wasu kurakurai masu tsayi a cikin diode na PiN tare da protons da aka dasa, kamar yadda aka nuna a Hoto na 3b–d. Ta amfani da yanayin X-ray, mun tabbatar da kasancewar PRs waɗanda za su iya motsawa daga BPD zuwa substrate a gefen lambobin sadarwa a cikin diode na PiN ba tare da allurar proton ba (Hoto na 4: wannan hoton ba tare da cire babban electrode ba (an ɗauki hoton, PR a ƙarƙashin electrodes ba a bayyane yake ba). Saboda haka, yankin duhu a cikin hoton EL ya yi daidai da tsawaitaccen 1SSF BPD a cikin substrate. An nuna hotunan EL na sauran diode na PiN da aka ɗora a cikin Hoto na 1 da 2. Bidiyon S3-S6 tare da da ba tare da tsawaitaccen yankunan duhu ba (hotunan EL masu canzawa lokaci na diode na PiN ba tare da allurar proton ba kuma an dasa su a 1014 cm-2) suma an nuna su a cikin Ƙarin Bayani.
Hotunan EL na diodes ɗin PiN a 25 A/cm2 bayan awanni 2 na matsin wutar lantarki (a) ba tare da dasa proton ba kuma tare da allurai da aka dasa na (b) 1012 cm-2, (c) 1014 cm-2 da (d) 1016 cm-2 protons.
Mun ƙididdige yawan 1SSF da aka faɗaɗa ta hanyar ƙididdige wurare masu duhu tare da gefuna masu haske a cikin diodes na PiN guda uku ga kowane yanayi, kamar yadda aka nuna a Hoto na 5. Yawan 1SSF da aka faɗaɗa yana raguwa tare da ƙaruwar adadin proton, kuma ko da a cikin adadin 1012 cm-2, yawan 1SSF da aka faɗaɗa ya yi ƙasa sosai fiye da na diodes na PiN da ba a dasa ba.
Ƙara yawan diodes na SF PiN tare da dasa proton da kuma ba tare da shi ba bayan lodawa da wutar lantarki mai ƙarfin lantarki (kowace jiha ta haɗa da diodes guda uku da aka ɗora).
Rage tsawon rayuwar mai ɗaukar kaya yana shafar rage faɗaɗawa, kuma allurar proton tana rage tsawon rayuwar mai ɗaukar kaya32,36. Mun lura da tsawon rayuwar mai ɗaukar kaya a cikin wani Layer na epitaxial mai kauri 60 µm tare da allurar protons na 1014 cm-2. Tun daga farkon rayuwar mai ɗaukar kaya, kodayake dashen ya rage ƙimar zuwa ~10%, sake farfaɗowa daga baya yana dawo da shi zuwa ~50%, kamar yadda aka nuna a Hoto na S7. Saboda haka, tsawon rayuwar mai ɗaukar kaya, wanda aka rage saboda dashen proton, ana dawo da shi ta hanyar rage zafin jiki mai yawa. Kodayake raguwar kashi 50% a rayuwar mai ɗaukar kaya kuma yana hana yaɗuwar lahani na tara kaya, halayen I-V, waɗanda galibi suka dogara da rayuwar mai ɗaukar kaya, suna nuna ƙananan bambance-bambance ne kawai tsakanin diodes da aka allura da waɗanda ba a sanya ba. Saboda haka, mun yi imanin cewa anga PD yana taka rawa wajen hana faɗaɗa 1SSF.
Duk da cewa SIMS ba ta gano hydrogen ba bayan an yi mata a zafin 1600°C, kamar yadda aka ruwaito a cikin binciken da suka gabata, mun lura da tasirin dashen proton akan hana faɗaɗa 1SSF, kamar yadda aka nuna a cikin Hoto na 1 da 4. 3, 4. Saboda haka, mun yi imanin cewa an ɗaure PD ta hanyar ƙwayoyin hydrogen waɗanda ke ƙasa da iyakar gano SIMS (2 × 1016 cm-3) ko lahani na maki da aka haifar ta hanyar dashen. Ya kamata a lura cewa ba mu tabbatar da ƙaruwar juriyar on-state ba saboda tsawaita 1SSF bayan nauyin hawan jini. Wannan yana iya zama saboda rashin daidaituwar hulɗar ohmic da aka yi ta amfani da tsarinmu, wanda za a kawar da shi nan gaba kaɗan.
A ƙarshe, mun ƙirƙiro hanyar kashewa don faɗaɗa BPD zuwa 1SSF a cikin diodes 4H-SiC PiN ta amfani da dasa proton kafin ƙera na'ura. Lalacewar halayen I-V yayin dasa proton ba ta da yawa, musamman a adadin proton na 1012 cm-2, amma tasirin danne faɗaɗa 1SSF yana da mahimmanci. Duk da cewa a cikin wannan binciken mun ƙera diodes PiN mai kauri 10 µm tare da dasa proton zuwa zurfin 10 µm, har yanzu yana yiwuwa a ƙara inganta yanayin dasawa da kuma amfani da su don ƙera wasu nau'ikan na'urorin 4H-SiC. Ya kamata a yi la'akari da ƙarin kuɗaɗen ƙera na'urori yayin dasa proton, amma za su yi kama da na dasa ion na aluminum, wanda shine babban tsarin ƙera na'urorin wutar lantarki 4H-SiC. Don haka, dasa proton kafin sarrafa na'ura hanya ce mai yuwuwa don ƙera na'urorin wutar lantarki 4H-SiC ba tare da lalacewa ba.
An yi amfani da wafer mai inci 4 na n-type 4H-SiC mai kauri mai layin epitaxial na 10 µm da kuma yawan allurar da aka yi wa mai bayarwa na 1 × 1016 cm–3 a matsayin samfurin. Kafin a sarrafa na'urar, an dasa ions na H+ a cikin farantin tare da kuzarin hanzari na 0.95 MeV a zafin ɗaki zuwa zurfin kusan μm 10 a kusurwar da ta dace da saman farantin. A lokacin dasa proton, an yi amfani da abin rufe fuska a kan farantin, kuma farantin yana da sassan da ba tare da kuma tare da adadin proton na 1012, 1014, ko 1016 cm-2 ba. Sannan, an dasa ions na Al tare da allurar proton na 1020 da 1017 cm–3 a kan dukkan wafer zuwa zurfin 0–0.2 µm da 0.2–0.5 µm daga saman, sannan a yi annealing a 1600°C don samar da murfin carbon don samar da Layer ap. -type. Daga baya, an sanya wani haɗin Ni na gefen baya a gefen substrate, yayin da aka sanya haɗin Ti/Al na gaba mai siffar tsefe 2.0 mm × 2.0 mm wanda aka samar ta hanyar photolithography kuma an sanya aikin barewa a gefen epitaxial Layer. A ƙarshe, ana yin annealing na haɗin gwiwa a zafin jiki na 700 °C. Bayan yanke wafer ɗin zuwa guntu, mun yi bayanin damuwa da amfani da shi.
An lura da halayen I-V na diodes ɗin PiN da aka ƙera ta amfani da na'urar nazarin sigogin semiconductor na HP4155B. A matsayin matsin lamba na lantarki, an gabatar da kwararar wutar lantarki mai ƙarfin millisecond 10 na 212.5 A/cm2 na tsawon awanni 2 a mita na bugun jini 10/sec. Lokacin da muka zaɓi ƙarancin yawan wutar lantarki ko mita, ba mu lura da faɗaɗa 1SSF ba ko da a cikin diode na PiN ba tare da allurar proton ba. A lokacin ƙarfin lantarki da aka yi amfani da shi, zafin diode na PiN yana kusa da 70°C ba tare da dumama da gangan ba, kamar yadda aka nuna a Hoto na S8. An samo hotunan lantarki kafin da bayan matsin wutar lantarki a yawan wutar lantarki na 25 A/cm2. Synchrotron reflection grazing incidence X-ray topography ta amfani da hasken X-ray monochromatic (λ = 0.15 nm) a Cibiyar Radiation ta Aichi Synchrotron, vector na ag a cikin BL8S2 shine -1-128 ko 11-28 (duba ref. 44 don ƙarin bayani). ).
An cire mitar ƙarfin lantarki a yawan wutar lantarki na gaba na 2.5 A/cm2 tare da tazara ta 0.5 V a cikin fig. 2 bisa ga CVC na kowace yanayin diode na PiN. Daga matsakaicin ƙimar damuwa ta Vave da daidaitaccen karkacewar σ na damuwa, mun tsara lanƙwasa rarrabawa ta al'ada a cikin nau'in layin dige a cikin Hoto na 2 ta amfani da lissafin da ke ƙasa:
Werner, MR & Fahrner, WR. Sharhi kan kayan aiki, na'urori masu auna ƙananan na'urori, tsarin da na'urori don amfani da su a yanayin zafi mai yawa da kuma yanayin muhalli mai tsauri. Werner, MR & Fahrner, WR. Sharhi kan kayan aiki, na'urori masu auna ƙananan na'urori, tsarin da na'urori don amfani da su a yanayin zafi mai yawa da kuma yanayin muhalli mai tsauri.Werner, MR da Farner, WR Bayani kan kayan aiki, na'urori masu auna ƙananan na'urori, tsarin da na'urori don amfani a cikin yanayi mai zafi da yanayi mai tsauri. Werner, MR & Fahrner, WR. Werner, MR & Fahrner, WR. Sharhin kayan aiki, na'urori masu auna ƙananan na'urori, tsarin da na'urori don amfani da yanayin zafi mai yawa da kuma muhalli mara kyau.Werner, MR da Farner, WR Bayani kan kayan aiki, na'urori masu auna ƙananan na'urori, tsarin da na'urori don amfani a yanayin zafi mai tsanani da yanayi mai tsauri.IEEE Trans. Kayan lantarki na masana'antu. 48, 249–257 (2001).
Kimoto, T. & Cooper, JA Tushen Fasahar Silicon Carbide Tushen Fasahar Silicon Carbide: Ci gaba, Halayya, Na'urori da Aikace-aikace Vol. Kimoto, T. & Cooper, JA Tushen Fasahar Silicon Carbide Tushen Fasahar Silicon Carbide: Ci gaba, Halayya, Na'urori da Aikace-aikace Vol.Kimoto, T. da Cooper, JA Tushen Fasahar Silicon Carbide Tushen Fasahar Silicon Carbide: Ci gaba, Halaye, Na'urori da Aikace-aikace Vol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 Kimoto, T. & Cooper, JA Tushen fasahar Carbon化silicon Tushen fasahar Carbon化silicon: girma, bayanin, kayan aiki da yawan aikace-aikacen.Kimoto, T. da Cooper, J. Basics of Silicon Carbide Technology Basics of Silicon Carbide Technology: Girma, Halaye, Kayan Aiki da Aikace-aikace Vol.252 (Wiley Singapore Pte Ltd, 2014).
Veliadis, V. Babban Sikelin Kasuwanci na SiC: Matsayin da Yake Ciki da Matsalolin da Za a Shawo Kan su. alma mater. kimiyya. Dandalin Tattaunawa 1062, 125–130 (2022).
Broughton, J., Smet, V., Tummala, RR & Joshi, YK Sharhin fasahar marufi na zafi don na'urorin lantarki masu amfani da wutar lantarki don dalilai na jan hankali. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Sharhin fasahar marufi na zafi don na'urorin lantarki masu amfani da wutar lantarki don dalilai na jan hankali.Broughton, J., Smet, V., Tummala, RR da Joshi, YK Bayani kan fasahar marufi ta zafi don na'urorin lantarki masu amfani da wutar lantarki don dalilai na jan hankali. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的的汽车电力电子热封装技术的回顾。 Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR da Joshi, YK Bayani kan fasahar marufi ta zafi don na'urorin lantarki masu amfani da wutar lantarki don dalilai na jan hankali.J. Electron. Kunshin. trance. ASME 140, 1-11 (2018).
Sato, K., Kato, H. & Fukushima, T. Ci gaban tsarin jan hankali na SiC ga jiragen ƙasa masu saurin gudu na Shinkansen na gaba. Sato, K., Kato, H. & Fukushima, T. Ci gaban tsarin jan hankali na SiC ga jiragen ƙasa masu saurin gudu na Shinkansen na gaba.Sato K., Kato H. da Fukushima T. Ƙirƙirar tsarin jan hankali na SiC da aka yi amfani da shi don jiragen ƙasa masu saurin gudu na Shinkansen na gaba.Sato K., Kato H. da Fukushima T. Tsarin Rage Motsa Jiki don Aikace-aikacen SiC don Jiragen Kasa Masu Sauri na Gaba na Shinkansen. Shafi na IEEJ J. Ind. 9, 453–459 (2020).
Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Kalubalen cimma ingantattun na'urorin wutar lantarki na SiC: Daga matsayin da ake ciki da kuma matsalolin SiC wafers. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Kalubalen cimma ingantattun na'urorin wutar lantarki na SiC: Daga matsayin da ake ciki da kuma matsalolin SiC wafers.Senzaki, J., Hayashi, S., Yonezawa, Y. da Okumura, H. Matsalolin aiwatar da na'urorin wutar lantarki masu inganci na SiC: tun daga yanayin da ake ciki da kuma matsalar wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Kalubale na samun babban aminci a cikin na'urorin wutar lantarki na SiC: daga SiC 晶圆的电视和问题设计。Senzaki J, Hayashi S, Yonezawa Y. da Okumura H. Kalubale a cikin haɓaka na'urorin wutar lantarki masu inganci waɗanda suka dogara da silicon carbide: bita kan yanayin da matsalolin da ke tattare da wafers ɗin silicon carbide.A taron kasa da kasa na IEEE na 2018 kan ilimin kimiyyar dogaro da kai (IRPS). (Senzaki, J. et al. edits.) 3B.3-1-3B.3-6 (IEEE, 2018).
Kim, D. & Sung, W. Inganta ƙarfin ɗan gajeren zango don 1.2kV 4H-SiC MOSFET ta amfani da rijiyar P mai zurfi da aka aiwatar ta hanyar dasawa. Kim, D. & Sung, W. Inganta ƙarfin ɗan gajeren zango don 1.2kV 4H-SiC MOSFET ta amfani da rijiyar P mai zurfi da aka aiwatar ta hanyar dasawa.Kim, D. da Sung, V. Inganta garkuwar gajarta don 1.2 kV 4H-SiC MOSFET ta amfani da zurfin rijiyar P da aka aiwatar ta hanyar dasawa ta hanyar tashoshi. Kim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性。 Kim, D. & Sung, W. P 阱提高了1.2kV 4H-SiC MOSFETKim, D. da Sung, V. Inganta juriyar gajeriyar hanya ta 1.2 kV 4H-SiC MOSFETs ta amfani da zurfin rijiyoyin P ta hanyar dasawa ta hanyar tashoshi.IEEE Lambobin Sadarwa na Na'urorin Lantarki Lett. 42, 1822–1825 (2021).
Skowronski M. da sauransu. Motsin lahani da aka haɓaka ta hanyar sake haɗawa a cikin diodes na pn 4H-SiC masu son gaba. J. Aikace-aikacen. kimiyyar lissafi. 92, 4699–4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Canza wurin da aka yi a cikin 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Canza wurin da aka yi a cikin 4H silicon carbide epitaxy.Ha S., Meszkowski P., Skowronski M. da Rowland LB Canjin nakasa yayin epitaxy na silicon carbide na 4H. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBCanjin katsewa 4H a cikin epitaxy na silicon carbide.J. Crystal. Girma 244, 257–266 (2002).
Skowronski, M. & Ha, S. Lalacewar na'urorin bipolar da aka yi da silicon-carbide masu siffar hexagonal. Skowronski, M. & Ha, S. Lalacewar na'urorin bipolar da aka yi da silicon-carbide masu siffar hexagonal.Skowronski M. da Ha S. Lalacewar na'urorin bipolar hexagonal bisa ga silicon carbide. Skowronski, M. & Ha, S. 六方碳化硅基双极器件的降解。 Skowronski M. & Ha S.Skowronski M. da Ha S. Lalacewar na'urorin bipolar hexagonal bisa ga silicon carbide.J. Aikace-aikacen. kimiyyar lissafi 99, 011101 (2006).
Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. da Ryu S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. da Ryu S.-H.Sabuwar hanyar lalata wutar lantarki ta MOSFETs masu ƙarfin lantarki mai ƙarfi na SiC. IEEE Electronic Devices Lett. 28, 587–589 (2007).
Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Akan ƙarfin motsawar motsi na lanƙwasa na tara a cikin 4H–SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Akan ƙarfin motsawar motsi na lanƙwasa na tara a cikin 4H-SiC.Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, da Hobart, KD Kan ƙarfin motsin lahani na haɗuwa da aka haifar a cikin 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力。 Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, da Hobart, KD, Akan ƙarfin motsin lahani na haɗuwa da aka haifar a cikin 4H-SiC.J. Aikace-aikacen. kimiyyar lissafi. 108, 044503 (2010).
Iijima, A. & Kimoto, T. Tsarin makamashin lantarki don ƙirƙirar lahani na Shockley guda ɗaya a cikin lu'ulu'u 4H-SiC. Iijima, A. & Kimoto, T. Tsarin makamashin lantarki don ƙirƙirar lahani na Shockley guda ɗaya a cikin lu'ulu'u 4H-SiC.Iijima, A. da Kimoto, T. Tsarin makamashin lantarki na samar da lahani guda ɗaya na marufin Shockley a cikin lu'ulu'u 4H-SiC. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型。 Iijima, A. & Kimoto, T. Tsarin makamashin lantarki na ƙirƙirar lahani na Shockley guda ɗaya a cikin lu'ulu'u 4H-SiC.Iijima, A. da Kimoto, T. Tsarin makamashin lantarki na samar da lahani ɗaya na marufi na Shockley a cikin lu'ulu'u 4H-SiC.J. Aikace-aikacen. kimiyyar lissafi 126, 105703 (2019).
Iijima, A. & Kimoto, T. Kimoto, T. Kimato, T. Kimato, T. Kimato, T. Kimato, T. Kiyastawar yanayi mai mahimmanci na faɗaɗa/ƙuntawa na lahani na Shockley guda ɗaya a cikin diodes ɗin PiN 4H-SiC. Iijima, A. & Kimoto, T. Kimoto, T. Kimato, T. Kimato, T. Kimato, T. Kimato, T. Kiyastawar yanayi mai mahimmanci na faɗaɗa/ƙuntawa na lahani na Shockley guda ɗaya a cikin diodes ɗin PiN 4H-SiC.Iijima, A. da Kimoto, T. Kimoto, T. Kimato game da mahimmancin yanayin faɗaɗa/matse lahani na kayan Shockley guda ɗaya a cikin diodes 4H-SiC PiN. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件。 Iijima, A. & Kimoto, T. Kimoto, T. Kimato na yanayin faɗaɗa/ƙanƙancewa na Layer ɗaya na Shockley a cikin diodes ɗin PiN 4H-SiC.Iijima, A. da Kimoto, T. Kimoto, T. Kimanta muhimman yanayi don faɗaɗa/matsewa na marufi na lahani guda ɗaya na Shockley a cikin diodes 4H-SiC PiN.kimiyyar aikace-aikace Wright. 116, 092105 (2020).
Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Tsarin aikin rijiyar Quantum don ƙirƙirar lahani guda ɗaya na Shockley stacking a cikin lu'ulu'u 4H-SiC a ƙarƙashin yanayin rashin daidaito. Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Tsarin aikin rijiyar Quantum don ƙirƙirar lahani guda ɗaya na Shockley stacking a cikin lu'ulu'u 4H-SiC a ƙarƙashin yanayin rashin daidaito.Mannen Y., Shimada K., Asada K., da Otani N. Tsarin rijiyar kwantum don samar da lahani guda ɗaya na Shockley a cikin lu'ulu'u 4H-SiC a ƙarƙashin yanayin rashin daidaito.Mannen Y., Shimada K., Asada K. da Otani N. Tsarin hulɗar rijiyar Quantum don ƙirƙirar lahani guda ɗaya na Shockley a cikin lu'ulu'u 4H-SiC a ƙarƙashin yanayin rashin daidaito. J. Aikace-aikacen. kimiyyar lissafi. 125, 085705 (2019).
Galeckas, A., Linnros, J. & Pirouz, P. Kurakuran tarin abubuwa da aka haifar da sake haɗawa: Shaida don wata hanya ta gaba ɗaya a cikin SiC mai siffar hexagonal. Galeckas, A., Linnros, J. & Pirouz, P. Kurakuran tarin abubuwa da aka haifar da sake haɗawa: Shaida don wata hanya ta gaba ɗaya a cikin SiC mai siffar hexagonal.Galeckas, A., Linnros, J. da Pirouz, P. Lalacewar Kunshin da aka Haɗa da Haɗawa: Shaida don Tsarin da Aka Yi Amfani da Shi a cikin SiC Mai Zurfi. Galeckas, A., Linnros, J. & Pirouz, P. 复合诱导的堆垛层错：六方SiC 中一般机制的证据。 Galeckas, A., Linnros, J. & Pirouz, P. Shaida ga tsarin gabaɗaya na haɗakar layin tarawar induction: 六方SiC.Galeckas, A., Linnros, J. da Pirouz, P. Lalacewar Kunshin da aka Haɗa da Haɗawa: Shaida don Tsarin da Aka Yi Amfani da Shi a cikin SiC Mai Zurfi.fannin kimiyyar lissafi Fasto Wright. 96, 025502 (2006).
Ishikawa, Y., Sudo, M., Yao, Y.-Z., Sugawara, Y. & Kato, M. Faɗaɗa matsalar Shockley guda ɗaya a cikin layin epitaxial na 4H-SiC (11 2 ¯0) wanda hasken wutar lantarki ya haifar.Ishikawa, Y., M. Sudo, hasken rana na Y.-Z.Ishikawa, Y., Sudo M., Y.-Z Psychology.Box, Ю., M. Судо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Lura da sake haɗakar masu ɗaukar kaya a cikin lahani na tara Shockley guda ɗaya da kuma a wasu ɓangarorin nakasa a cikin 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Lura da sake haɗakar masu ɗaukar kaya a cikin lahani na tara Shockley guda ɗaya da kuma a wasu ɓangarorin nakasa a cikin 4H-SiC.Kato M., Katahira S., Itikawa Y., Harada S. da Kimoto T. Lura da Haɗakar Mai Jigilar Kaya a cikin Lalacewar Kunshin Shockley Guda ɗaya da Rushewar Bangare a cikin 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley 堆垛层错和4H-SiC 部分位错中载流子复合的跟 Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley stacking stacking和4H-SiC partial 位错中载流子去生的可以。Kato M., Katahira S., Itikawa Y., Harada S. da Kimoto T. Lura da Haɗakar Mai Jigilar Kaya a cikin Lalacewar Kunshin Shockley Guda ɗaya da Rushewar Bangare a cikin 4H-SiC.J. Aikace-aikacen. kimiyyar lissafi 124, 095702 (2018).
Kimoto, T. & Watanabe, H. Injiniyan da ke da lahani a fasahar SiC don na'urorin wutar lantarki masu ƙarfin lantarki mai ƙarfi. Kimoto, T. & Watanabe, H. Injiniyan da ke da lahani a fasahar SiC don na'urorin wutar lantarki masu ƙarfin lantarki mai ƙarfi.Kimoto, T. da Watanabe, H. Ci gaban lahani a fasahar SiC don na'urorin wutar lantarki masu ƙarfin lantarki mai ƙarfi. Kimoto, T. & Watanabe, H. 用于高压功率器件的SiC 技术中的缺陷工程。 Kimoto, T. & Watanabe, H. Injiniyan da ke da lahani a fasahar SiC don na'urorin wutar lantarki masu ƙarfin lantarki mai ƙarfi.Kimoto, T. da Watanabe, H. Ci gaban lahani a fasahar SiC don na'urorin wutar lantarki masu ƙarfin lantarki mai ƙarfi.ilimin kimiyyar aikace-aikace Express 13, 120101 (2020).
Zhang, Z. & Sudarshan, TS Basal plane epitaxy na silicon carbide wanda ba shi da nakasa. Zhang, Z. & Sudarshan, TS Basal plane epitaxy na silicon carbide wanda ba shi da nakasa.Zhang Z. da Sudarshan TS ba tare da rabuwar jiki ba na silicon carbide a cikin babban jirgin. Zhang, Z. & Sudarshan, TS 碳化硅基面无位错外延。 Zhang, Z. & Sudarshan, TSZhang Z. da Sudarshan TS ba su da rabuwar jiki na jiragen silicon carbide basal.bayani. kimiyyar lissafi. Wright. 87, 151913 (2005).
Zhang, Z., Moulton, E. & Sudarshan, TS Tsarin kawar da gurɓataccen jirgin sama na basal a cikin siraran fina-finan SiC ta hanyar epitaxy akan wani abu mai laushi. Zhang, Z., Moulton, E. & Sudarshan, TS Tsarin kawar da gurɓataccen jirgin sama na basal a cikin siraran fina-finan SiC ta hanyar epitaxy akan wani abu mai laushi.Zhang Z., Moulton E. da Sudarshan TS Tsarin kawar da gurɓatattun wurare na ƙasa a cikin siraran fim ɗin SiC ta hanyar epitaxy akan wani abu mai laushi. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制。 Zhang, Z., Moulton, E. & Sudarshan, TS Tsarin kawar da siririn fim ɗin SiC ta hanyar ƙera substrate.Zhang Z., Moulton E. da Sudarshan TS Tsarin kawar da gurɓatattun wurare na ƙasa a cikin siraran fina-finan SiC ta hanyar epitaxy akan abubuwan da aka zana.kimiyyar lissafi ta amfani da fasaha Wright. 89, 081910 (2006).
Shtalbush RE da sauransu. Katsewar girma yana haifar da raguwar rarrabuwar basal plane a lokacin epitaxy na 4H-SiC. sanarwa. kimiyyar lissafi. Wright. 94, 041916 (2009).
Zhang, X. & Tsuchida, H. Canza rarrabuwar basal plane zuwa rabuwar gefen zare a cikin epilayer 4H-SiC ta hanyar rage zafin jiki. Zhang, X. & Tsuchida, H. Canza rarrabuwar basal plane zuwa rabuwar gefen zare a cikin epilayer 4H-SiC ta hanyar rage zafin jiki.Zhang, X. da Tsuchida, H. Sauyawar ɓarkewar jirgin sama na basal zuwa ɓarkewar gefen zare a cikin layukan epitaxial na 4H-SiC ta hanyar ƙara yawan zafin jiki. Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiC 外延层中的基面位错转化为螺纹刃位错。 Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiCZhang, X. da Tsuchida, H. Sauyawar katsewar jirgin ƙasa zuwa katsewar gefen filament a cikin layukan epitaxial 4H-SiC ta hanyar rage zafin jiki.J. Aikace-aikace. kimiyyar lissafi. 111, 123512 (2012).
Song, H. & Sudarshan, TS Canza wurin da aka cire jirgin sama na Basal kusa da haɗin epilayer/substrate a cikin haɓakar epitaxial na 4° daga axis 4H–SiC. Song, H. & Sudarshan, TS Canza wurin da aka cire jirgin sama na Basal kusa da haɗin epilayer/substrate a cikin haɓakar epitaxial na 4° daga axis 4H–SiC.Song, H. da Sudarshan, TS Canjin rarrabuwar basal plane kusa da layin epitaxial/substrate yayin haɓakar epitaxial na 4H–SiC a waje da axis. Song, H. & Sudarshan, TS 在4° 离轴4H-SiC 外延生长中外延层/衬底界面附近的基底平面位错转换。 Song, H. & Sudarshan, TS 在4° 离轴4H-SiC Song, H. & Sudarshan, TSCanjin da aka samu a saman ƙasa na substrate kusa da iyakar epitaxial/substrate yayin haɓakar epitaxial na 4H-SiC a wajen axis na 4°.J. Crystal. Ci gaba 371, 94–101 (2013).
Konishi, K. da sauransu. A lokacin da ake samun wutar lantarki mai yawa, yaduwar matsalar rushewar jirgin sama na basal plane a cikin layukan epitaxial na 4H-SiC yana canzawa zuwa rushewar gefen filament. J. Application. physics. 114, 014504 (2013).
Konishi, K. da sauransu. Zana layukan epitaxial don bipolar SiC MOSFETs marasa lalacewa ta hanyar gano wuraren nucleation masu tsayi a cikin nazarin yanayin X-ray na aiki. AIP Advanced 12, 035310 (2022).
Lin, S. da sauransu. Tasirin tsarin rushewar jirgin sama na basal akan yaɗuwar matsalar tara bayanai guda ɗaya ta Shockley yayin ruɓewar wutar lantarki ta gaba ta diodes ɗin fil na 4H-SiC. Japan. J. Aikace-aikacen. kimiyyar lissafi. 57, 04FR07 (2018).
Tahara, T., da sauransu. Ana amfani da gajeren rayuwar mai ɗaukar kaya a cikin layukan 4H-SiC masu wadataccen nitrogen don rage lahani a cikin diodes na PiN. J. Aikace-aikacen. physics. 120, 115101 (2016).
Tahara, T. da sauransu. Dogaro da yawan masu ɗaukar kaya da aka yi wa allurar ya dogara ne akan yaduwar lahani guda ɗaya na Shockley a cikin diodes 4H-SiC PiN. J. Aikace-aikacen. Physics 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Tsarin FCA mai siffar microscopic don auna tsawon rayuwar mai ɗaukar kaya a cikin SiC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Tsarin FCA mai siffar microscopic don auna tsawon rayuwar mai ɗaukar kaya a cikin SiC.Mei, S., Tawara, T., Tsuchida, H. da Kato, M. Tsarin Na'urar Duban Ƙarfi ta FCA don Ma'aunin Tsawon Rayuwar Mai Jigilar Kaya Mai Zurfi a Silicon Carbide. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. 用于SiC 中深度分辨载流子寿命测量的显微FCA 系统。 Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Don matsakaicin zurfin zurfin SiCMei S., Tawara T., Tsuchida H. da Kato M. Tsarin Micro-FCA don auna tsawon rayuwar mai ɗaukar kaya a cikin silicon carbide.Dandalin kimiyya na alma mater 924, 269–272 (2018).
Hirayama, T. da sauransu. An auna zurfin rarrabawar rayuwar mai ɗaukar kaya a cikin kauri yadudduka na epitaxial 4H-SiC ba tare da lalatawa ba ta amfani da ƙudurin lokaci na sha da hasken da aka haɗa. Canja zuwa kimiyya. mita. 91, 123902 (2020).
Lokacin Saƙo: Nuwamba-06-2022
